葡萄糖掺杂对MgB2钉扎机制的影响

本文通过磁性测量获得了葡萄糖掺杂MgB2块材样品的临界电流密度Jc,并利用集体钉扎模型分析了掺杂对其磁通钉扎机制的影响．研究发现,在纯样中δTc钉扎为主导钉扎机制;而在掺杂样品中,随着掺杂量的增加础钉扎所占比重逐渐增大到90％．剩余电阻率的计算结果也验证了掺杂样品中的钉扎机制变化．我们推断础钉扎主要是由碳对硼位掺杂引起...     

Quasiparticle scattering induced by charge doping of iron-pnictide superconductors probed by collective vortex pinning

Charge doping of iron-pnictide superconductors leads to collective pinning of flux vortices, whereas isovalent doping does not. Moreover, flux pinning in the charge-doped compounds is consistently described by the mean-free path fluctuations introduced by the dopant atoms, allowing for the extraction of the elastic quasiparticle scattering rate. The absence of scattering by dopant atoms in isovalently doped BaFe2(As(1-x)P(x))(2) is consistent with the observation of a linear temperature dependence of the low-temperature penetration depth in this material.     

用XRD和ACS测量研究Y1-xEuxBa2Cu3O7-δ超导体的应力钉扎机制

利用X射线衍射（XRD）和交流磁化率（ACχ）方法系统地研究了Y1x-EuxBa2Cu3O7-δ（x=0.0-1.0）超导体,研究发现Eu 掺杂替代了Y晶位后引起晶格失想与电流密度有密切的联系,对于不同掺杂成分样品,X射线衍射线分析表明（006）及（007）衍射峰型随掺杂量变化,杂浓度在30％和70％附近时,半高宽（FWHM)再现极大值,表明此时样品的晶格失配最大,与此相对应,电流密度Js也在此掺杂浓度范围内达到极大值,我们在晶格失配应力场的钉钆模型下对实现现象进行了讨论,认为Y1-xEuxBa2Cu3O7-δ超导体中由元素替代引起的晶格失配应力场是有效的钉扎中心。     

Equilibrium states of planar vortices in a three-dimensional josephson medium and meaning of the pinning-energy concept

Various ways of specifying the pinning-energy concept for planar vortices in a three-dimensional cellular Josephson medium are analyzed. It is shown that, for values of the pinning parameter I that are not small, a universal characteristic of vortex interaction with the lattice cannot be found, since the displacement of a vortex distorts its shape. At small values of I, the maximum pinning force can be chosen for such a characteristic. Two equilibrium states of a vortex are analyzed for stability. It is revealed that the state of higher energy is not inevitably unstable. A correct analysis of stability must be based on exploring a quadratic form that describes the energy of a current configuration. Such an investigation is performed for the equilibrium state of a vortex. At small values of the pinning parameter, the vortex state of higher energy is quasistable.     

Artificial pinning in thick YBCO films: Pinning potential and c-axis correlation

We have introduced artificial pinning centres in thick (>1 μm) YBCO films grown by Pulsed Laser Deposition using substrate decoration, quasi-multilayers, and target doping approaches. We have found that the frequency dependence of critical current density is consistent with a logarithmic dependence of pinning potential on current density. For most of materials used as nano-dots, artificially-induced pinning centres have a larger potential than natural ones. From angle-dependent in-field transport measurements and from Transmission Electron Microscopy we have found evidence of c-axis correlated pinning centres.     

Hydrogen defect-level pinning in semiconductors: the muonium equivalent

We have determined locations for the donor and acceptor levels of muonium in six semiconductor materials (Si, Ge, GaAs, GaP, ZnSe, and 6H-SiC) as a test of defect-level pinning for hydrogen. Within theoretical band alignments, our results indicate a common energy for the equilibrium charge-transition level Mu(+/-) to within experimental uncertainties. However, this is nearly 0.5 eV higher than the energy at which the equivalent level for hydrogen was predicted to be pinned. Corrections for zero-point energy account for only about 10% of this difference. We also report experimental results for the (negative-U) difference between donor and acceptor levels for Mu to be compared with calculated values for H impurities in the same materials.     

Electronic non-equilibrium conditions at C60–pentacene heterostructures

The electronic structure of vacuum-sublimed layered organic heterostructures of pentacene (PEN) and fullerene (C₆₀) on conducting polymer substrates was investigated using ultraviolet photoelectron spectroscopy (UPS). The conditions at the PEN/C₆₀interface changed from thermodynamic non-equilibrium (i.e. the onset of the PEN highest occupied molecular orbital above the substrate Fermi-energy) for thin PEN coverages on C₆₀ to thermodynamic equilibrium for thicker PEN coverages (i.e. Fermi-level pinning of PEN). This finding is attributed to a coverage-dependent pinhole connection of PEN through the C₆₀ layer with the substrate. The experiments demonstrate the importance of organic thin film morphology for UPS measurements to assess the energy level alignment at organic/organic heterointerfaces.     

Spin-wave resonance as a tool for probing surface anisotropies in ferromagnetic thin films: Application to the study of (Ga,Mn)As

In this paper we provide a concise review of present achievements in the study of spin-wave resonance (SWR) in ferromagnetic semiconductor (Ga,Mn)As thin films. The theoretical treatment of the experimental SWR data obtained so far concentrates specifically on the spherical surface pinning (SSP) model, in which the surface spin pinning energy is expressed by configuration angles (the out-of-plane polar angle $?$ and the in-plane azimuthal angle $\phi$) defining the direction of surface magnetization in the considered thin film. The model is based on a series expansion of the surface spin pinning energy; the terms in the series represent the respective pinning contributions from the cubic anisotropy as well as uniaxial anisotropies. Comparing theory with the reported experimental studies of SWR in thin films of the ferromagnetic semiconductor (Ga,Mn)As, we find that besides the first-order cubic anisotropy, higher-order cubic anisotropies (in the second and third orders) as well as uniaxial anisotropies (perpendicular in the first and second orders, and in-plane diagonal) occur on the surface of this material. We use our results to plot a 3D hypersurface visualizing the angle dependence of the surface spin pinning energy in configurational space. An advantage of this spatial representation is that the shape of the obtained hypersurface allows us to predict new SWR effects that have not yet been observed experimentally. Prospective experimental studies for the verification of this surface pinning model would bring new insight into the surface anisotropy phenomenon in (Ga,Mn)As thin films and help complete the knowledge in this field, the shortage of which in the literature available to date is becoming bothersome.     

Energy levels in doped SiGe quantum well studied by admittance spectroscopy

SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 10²⁰ cm⁻³ becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing.     

Equilibrium topology of the intermediate state in type-I superconductors of different shapes

A high-resolution magneto-optical technique was used to analyze flux patterns in the intermediate state of bulk Pb samples of various shapes - cones, hemispheres, and discs. Combined with the measurements of macroscopic magnetization, these results allowed studying the effect of bulk pinning and geometric barrier on the equilibrium structure of the intermediate state. Zero-bulk pinning discs and slabs show hysteretic behavior due to topological hysteresis - flux tubes on penetration and lamellae on flux exit. (Hemi)spheres and cones do not have a geometric barrier and show no hysteresis with flux tubes dominating the intermediate field region in both regimes. It is concluded that flux tubes represent the equilibrium topology of the intermediate state. Real-time video is available in the EPAPS Document No. E-PRLTAO-98-024726..     

Ni2O3掺杂对新固相源顶部籽晶熔渗生长法制备单畴GdBCO超导块材超导性能的影响

本文通过在新固相源中添加Ni₂O₃的方法, 采用顶部籽晶熔渗生长工艺(TSIG)制备出组分为(1-x) (Gd₂O₃+1.2BaCuO₂)+x Ni₂O₃、直径为20 mm的单畴GdBCO 超导块材(其中x = 0, 0.02, 0.06, 0.10, 0.14, 0.18, 0.30, 0.50 wt%), 并研究了Ni₂O₃的掺杂量x对样品的表面生长形貌、微观结构、临界温度T_c、磁悬浮力以及俘获磁通密度的影响. 研究结果表明, 当Ni₂O₃的掺杂量x在0–0.50 wt%的范围内时, 均可制备出单畴性良好的样品, 且Ni₂O₃的掺杂对样品中Gd211粒子的分布和粒径没有明显的影响. 在Ni₂O₃的掺杂量x从0增加到0.50 wt%的过程中, 样品的临界温度T_c呈现下降的趋势, 从x=0时的92.5 K下降到x=0.50 wt%时的86.5 K, 这是由于Ni^{3 +}替代GdBCO晶体中Cu^{2 +}所致; 样品磁悬浮力和俘获磁通密度均呈现先增大后减小的变化规律, x=0.14 wt%时, 磁悬浮力达到最大值34.2 N, x=0.10 wt%时, 俘获磁通密度达到最大值0.354 T. 样品磁悬浮力和俘获磁通密度的变化规律与Ni₂O₃的掺杂量x有密切关系, 只有当掺杂量x合适时, Ni³⁺对Cu^{2 +}的替代既不会造成T_c的明显下降, 但又能产生适量的Ni^{3 +}/Cu²⁺ 晶格畸变, 从而达到提高样品磁通钉扎能力和超导性能的效果.     

Hall effect and pinning regimes in thin films doped with nanoparticles

Hall effect and flux pinning in YBa₂Cu₃O_6+x (YBCO) thin films doped with BaZrO₃ (BZO) nanoparticles is investigated. The results show that sign reversal of the Hall coefficient from positive hole-like to negative electron-like occurs in vortex-liquid regime of undoped and BZO-doped YBCO films. With increasing BZO concentration the amplitude of the negative Hall effect is suppressed while the temperature position of the anomalous Hall effect does not depend significantly on doping level. In addition, it is shown that Hall conductivity increases non-monotonically with increasing BZO doping. These results support a model where BZO at low doping concentration induces point pinning centres turning to strong columnar pinning defects in films doped with 4% BZO.     

Irreversible metamagnetic transition and magnetic memory in small-bandwidth manganite Pr(1-x)Ca(x)MnO3 (x = 0.0-0.5)

The present paper reports detailed structural and magnetic characterization of the low-bandwidth manganite Pr(1-x)Ca(x)MnO(3) (with x = 0.0-0.5) (PCMO) polycrystalline samples. With increasing Ca content, reduction of the unit cell volume and improvement in perovskite structure symmetry was observed at room temperature. Magnetic characterization shows the signature of coexisting AFM-FM ordering and spin-glass phase at the low doping range (x = 0.0-0.2) while increased hole doping (x = 0.3-0.5) leads to charge ordering, training effect and an irreversible metamagnetic phenomenon. The large irreversible metamagnetism in the CO phase of PCMO and the corresponding spin memory effect is a direct consequence of hysteretic first-order phase transition arising from the weakening of the CO state under the external magnetic field and trapping of the spins due to a strong pinning potential in the material.     

Dynamics of a pinned magnetic vortex

We observe the dynamics of a single magnetic vortex pinned by a defect in a ferromagnetic film. At low excitation amplitudes, the vortex core gyrates about its equilibrium position with a frequency that is characteristic of a single pinning site. At high amplitudes, the frequency of gyration is determined by the magnetostatic energy of the entire vortex, which is confined in a micron-scale disk. We observe a sharp transition between these two amplitude regimes that is due to depinning of the vortex core from a local defect. The distribution of pinning sites is determined by mapping fluctuations in the frequency as the vortex core is displaced by a static in-plane magnetic field.     

Y-211粒子与Y_2O_3粉掺杂的熔融织构YBCO超导体性能及微观研究

采用熔融织构法结合顶部籽晶技术 ,掺杂 Y2 O3粉和 Y- 2 1 1粒子制备了高质量的准单畴熔融织构的 YBCO块材。样品的 Jc测量表明 :临界电流密度 Jc在 1 0 K温度 0 .6T磁场下达到 1 .6×1 0 6 A/ cm2 ;在 70 K温度 2 T磁场下达到 1 .2 4× 1 0 4A/ cm2。扫描电镜观察表明 :掺杂 Y2 O3粉所形成的 Y- 2 1 1粒子是柱状的 ,而掺杂 Y- 2 1 1粒子在母体材料中形成的是球形的 Y- 2 1 1粒子 ,掺杂Y2 O3 粉比 Y- 2 1 1粒子能更有效地改善样品的生长状况。可见 ,Y- 2 1 1粒子与超导母体材料之间的界面对磁通钉扎起主要作用 ,Y- 2 1 1粒子作为强钉扎中心是属于界面钉扎     

Studies on excimer laser doping of GaAs using sulphur adsorbate as dopant source

Excimer laser doping of GaAs using sulphur adsorbate as a dopant source is demonstrated. Box-like n-type layers of depths of about 100 nm with carrier concentration as high as (23)×10¹⁹ cm^–3 are formed. Passivation of GaAs using a (NH₄)₂S_x solution for 40 min followed by sublimation of the excess sulphur atoms in high vacuum result in an effective dopant for controllable n-type doping. The samples are irradiated using a KrF excimer laser in a N₂ gaseous environment. Secondary ion mass spectrometry (SIMS) measurements show that sulphur is successfully incorporated in the GaAs. The sheet resistance is controlled by adjusting the laser energy fluence and number of laser pulses. Rutherford backscattering spectrometry with channeling (RBS/C) alignment measurement indicates that lattice damage is undetectable for N₂ gas pressures of 760 Torr.     

Macroscopic torsional strain and induced molecular conformational deracemization

A macroscopic helical twist is imposed on an achiral nematic liquid crystal by controlling the azimuthal alignment directions at the two substrates. On application of an electric field the director rotates in the substrate plane. This electroclinic effect, which requires the presence of chirality, is strongest at the two substrates and increases with increasing imposed twist distortion. We present a simple model involving a trade-off among bulk elastic energy, surface anchoring energy, and deracemization entropy that suggests the large equilibrium director rotation induces a deracemization of chiral conformations in the molecules-effectively "top-down" chiral induction-quantitatively consistent with experiment.     

Systematic Study of Vortex Pinning and a Liquid–Glass Phase Transition in BaFe<Subscript>2–<Emphasis Type="Italic">x</Emphasis></Subscript>Ni<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>As<Subscript>2</Subscript> Single Crystals

The vortex pinning and liquid-glass transition have been studied in BaFe_2–xNi _x As₂ single crystals with different doping levels (x = 0.065, 0.093, 0.1, 0.14, 0.18). We found that Ni-doped Ba-122 has rather narrow vortex-liquid state region. Our results show that the temperature dependence of the resistivity as well as I?V characteristics of Ni-doped Ba-122 is consistent with 3D vortex-glass model. It was found that -pinning gives the main contribution to overall pinning in 122 Ni-doped system. The vortex phase diagrams for different doping levels were built based on the obtained data of temperature of the vortex-glass transition T_g and the upper critical magnetic field H_c2.     

A model of the intimate metal-semiconductor Schottky-barrier contact

On the basis of numerical analysis, a model of the intimate metal-semiconductor Schottky-barrier (SB) contact is proposed. According to this model, the Fermi-level pinning at the contact is due to high density of electron surface states in equilibrium with the metal, whereas the IV characteristic distortions (deviation from ideality) are due to a continuous (and/or discrete) spectrum of the energy-and coordinate distributed (in the general case) near-surface states in equilibrium with the semiconductor. This model amplifies the Bardeen model for actual SB contacts that is limited by the assumption of the presence of an intermediate insulating layer. However, the assumption is not necessarily fulfilled for the contacts manufactured using currently available technologies. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 77–85, October, 2005.