AES and PYS studies of the polar GaAs(111) as surface after thermal cleaning in ultrahigh vacuum

Auger Electron Spectroscopy (AES) and Photoemission Yield Spectroscopy (PYS) have been used in the investigations of elemental composition and electronic properties of the polar GaAs-(111) As surface after thermal cleaning by electron bombardment heating at 770 K in an ultrahigh vacuum of 10⁻⁷ Pa. The surface concentration of As was 0.01 ML which corresponds to the (1 × 1) and weak (3 × 3) atomic structure, whereas the work function and absolute band bending were 4.05 ± 0.02 eV and −0.21 ± 0.04 eV, respectively. Moreover, two filled electronic surface state bands localized in the band gap below the Fermi level EF and in the upper part of the valence band were observed which have been described as the dangling-bond surface state and back-bond surface state bands, respectively.     

Theoretical study of the electronic structure of the Si3N4(0 0 0 1) surface

Density functional theory has been applied to a study of the electronic structure of the ideally-terminated, relaxed and H-saturated (0 0 0 1) surfaces of β-Si₃N₄ and to that of the bulk material. For the bulk, the lattice constants and atom positions and the valence band density of states are all in good agreement with experimental results. A band gap of 6.7 eV is found which is in fair accord with the experimental value of 5.1-5.3 eV for H-free Si₃N₄. Using a two-dimensionally-periodic slab model, a π-bonding interaction is found between threefold-coordinated Si and twofold-coordinated N atoms in the surface plane leading to π and π* surface-state bands in the gap. A surface-state band derived from s-orbitals is also found in the gap between the upper and lower parts of the valence band. Relaxation results in displacements of surface and first-underlayer atoms and to a stronger π-bonding interaction which increases the π-π* gap. The relaxed surface shows no occupied surface states above the valence band maximum, in agreement with recent photoemission data for a thin Si₃N₄ film. The π* band, however, remains well below the conduction band minimum (but well above the Fermi level). Adsorbing H at all dangling-bond sites on the ideally-terminated surface and then relaxing the surface and first underlayer leads to smaller, but still finite, displacements in comparison to the clean relaxed surface. This surface is more stable, by about 3.67 eV per H, than the clean relaxed surface.     

Optical properties of dangling-bond states at cleaved silicon surfaces

The spectral dependence of surface photovoltage and surface photoconductance both under continuous illumination as well as LEED I/V spectra were studied with cleaved Si(111)-2 × 1 surfaces at 130 K. Between 0.23 and 0.5 eV a doubly peaked absorption band was found with opposite sign compared to the SPV and SPC signals at higher photon energies. This band is due to electronic transitions from occupied to empty dangling-bond states located at the raised and the lowered rows of atoms in the 2 × 1 reconstruction, respectively. This absorption shows a pronounced dependence on the polarization of the incident light which correlates with the spatial symmetry of the dangling-bond states. Anneals at up to 500 K remove the low-energy absorption peak and equalize the 2 × 1 reconstruction: The homogeneous Si(111)-2 × 1 structure exhibits a buckling of 0.3 Å and a dangling-bond absorption with a threshold at 0.42 eV and a maximum at 0.47 eV. An anneal at 750 K, forming the 7 × 7 structure, destroys the peak of opposite sign in SPV and SPC and only leaves a broad tail with a threshold of 0.32 eV.     

Non-orthogonal tight-binding approach to surface states of covalent semiconductors

A non-orthogonal tight-binding approach to the surface electronic structure of covalent semiconductors is formulated. Using a non-orthogonal basis of bonding, antibonding and dangling-bond orbital surface states, in particular empty surface resonances in the conduction band are computed. Calculations are performed for Si (111) ideal and relaxed surfaces, leading to results in good agreement with self-consistent calculations. The advantage of using a non-orthogonal basis which effectively results in improved orbital localization is demonstrated.     

二氧化铀电子结构和弹性性质的第一性原理研究

本文采用第一性原理的方法系统研究了UO₂的晶体结构、电子结构和弹性性质. 在计算中采用广义梯度近似结合Hubbard U项描述电子的局域强关联效应. 首先通过计算能带带隙大小并与理论值比较的方法, 得到了合理的有效库仑相关作用能(U_eff)的取值, 同时通过态密度的计算, 进一步验证了U_eff取值的合理性. 计算得到UO₂中U原子的U_eff值为3.30 eV (U_eff=U-J, U=3.70 eV, J=0.40 eV). 应用此参数计算得到的UO₂晶格常数为5.54 Å, 带隙宽度为2.17 eV. 该结果优于目前现有的研究结果, 同时在同样的U_eff值条件下计算所得到的弹性常数与实验值也符合得较好. 相较于之前的基于实验测量并分析得到的U_eff值, 我们所采用的方法在对UO₂性质描述上更为准确. 不同的有效库仑相关作用能取值下的态密度结果表明, 有效库仑相关作用能的大小可以影响铀原子5f电子轨道的分布.     

First-principles study of electronic and optical properties of the optical non linear LiMoO3(IO3)

The electro-optical properties, including: energy density of states function, dielectric function, refraction coefficient, extinction coefficient, band structure, energy gap and optical conductance of LiMoO₃(IO₃) structure with single-crystal data are computed and discussed in this paper. The LDA + U and generalized gradient approximations (GGA) with the full-potential linearized augmented plane wave method (FP-LAPW) in the framework of density functional theory (DFT) are used to compute the energy gap and other properties of this structure by considering the orbital dependent potential for coupled d orbital brought from experimental results and the U is applied to the Mo d-manifold. The results of energy gap are 2.1 eV and 1.5 eV for LDA + U and for GGA methods, respectively, which LDA + U method result is very close to experimental results.     

LSDA+U方法研究PuO2电子结构和成键特征

采用LSDA(局域自旋密度近似) U(有效库仑相关能)方法计算研究了PuO2的电子结构和成键特征。计算的平衡体积和半导体带隙分别为0.03875 nm3和0.18 eV,与实验结果符合得很好。能态密度和电子密度的分析表明PuO2并不是纯粹的离子晶体,Pu5f和O2p轨道杂化形成共价键。计算结果有助于理解PuO2晶体中Pu5f电子的关联效应。     

Electronic states of (2 × 1) and (1 × 1) (111) surfaces of Ge,Si, diamond,GaAs and Ge on Si

The “dangling-bond” surface state dispersion curves, E(k), have been calculated for the (2 × 1) and (1× 1) (111) surfaces of Ge, Si, and diamond, for (1 × 1) GaAs, and for (2 × 1) Ge on Si. The calculations employ the sp³s1 empirical tight-binding model of Vogl et al. and the atomic relaxation of Feder et al. The surface state band gaps are in good agreement with optical-absorption and electron-energy-loss measurements for Ge and Si. For the assumed epitaxial geometry, Ge on Si is predicted to shift the dangling-bond states downward by ≈0.1 to 0.4 eV.     

Fe:Mg:LiNbO3晶体电子结构和吸收光谱的第一性原理研究

基于密度泛函理论的第一性原理, 研究了LiNbO₃晶体以及不同Mg浓度的Fe:Mg:LiNbO₃晶体的电子结构和吸收光谱. 研究结果显示: 掺铁铌酸锂晶体的杂质能级由Fe 的3d轨道和O的2p轨道贡献, 禁带宽度为2.845 eV; 对于Mg, Fe共掺样品, Mg的浓度小于或等于阈值时, 禁带宽度分别为2.901 和2.805 eV; 掺铁铌酸锂晶体的吸收谱在2.3和2.6 eV处分别存在一个吸收峰, 其强度因Mg的浓度不同而发生变化. 研究结果还表明, 不同浓度的Mg对晶体内Fe²⁺和Fe³⁺的浓度以及占位产生了不同的影响. 还提出了光电子的形成不应单独考虑铁的轨道电子态, 而应同时考虑与铁成键的氧的轨道电子态的观点.     

N-S共掺杂金红石相TiO2电子结构与光学性质的第一性原理研究

采用基于第一性原理的平面波超软赝势方法研究N和S单掺杂以及N和S共掺杂金红石相TiO2的能带结构,态密度和光学性质.结果表明:N掺杂导致禁带宽度减小为1.43 eV,并且在价带上方形成了一条杂质能带;S掺杂导致费米能级上移靠近导带,直接带隙减小为0.32 eV;N和S共掺杂导致能带结构中出现了两条杂质能带,靠近导带的一条杂质能级距离导带底约0.35 eV,靠近价带的一条杂质能级距离价带顶约0.85 eV,杂质能级主要由N原子的2p轨道和S原子的3p轨道组成.N和S掺杂后不但使TiO2的吸收带产生红移,而且在可见光区具有较大的吸收系数,光催化活性增强.     

Electronic structure and electron dynamics at Si(100)

The electronic structure and electron dynamics at a Si(100) surface is studied by two-photon photoemission (2PPE). At 90 K the occupied D_up dangling-bond state is located 150±50 meV below the valence-band maximum (VBM) at the center of the surface Brillouin zone ̄ and exhibits an effective hole mass of (0.5±0.15)m_e. The unoccupied D_down band has a local minimum at ̄ at 650±50 meV above the VBM and shows strong dispersion along the dimer rows of the c(4×2) reconstructed surface. At 300 K the D_down position shifts comparable to the Si conduction-band minimum by 40 meV to lower energies but the dispersion of the dangling-bond states is independent of temperature. The surface band bending for p-doped silicon is less than 30 meV, while acceptor-type defects cause significant and preparation-dependent band bending on n-doped samples. 2PPE spectra of Si(100) are dominated by interband transitions between the occupied and unoccupied surface states and emission out of transiently and permanently charged surface defects. Including electron–hole interaction in many-body calculations of the quasi-particle band structure leads us to assign a dangling-bond split-off state to a quasi-one-dimensional surface exciton with a binding energy of 130 meV. Electrons resonantly excited to the unoccupied D_down dangling-bond band with an excess energy of about 350 meV need 1.5±0.2 ps to scatter via phonon emission to the band bottom at ̄ and relax within 5 ps with an excited hole in the occupied surface band to form an exciton living for nanoseconds. PACS 73.20.At; 79.60.Bm; 79.60.Dp; 79.60.Ht     

非球对称势场与轨道有序化:NiO电子结构再研究

用含有非球对称修正的FPLMTO和LDA+UDFT,LDA+USIC研究了NiO的电子结构,发现由于非球对称势场的引入,导致了占据的3d轨道eg分量的轨道有序化.结果表明在这一类复杂的强关联电子中,原子球内非球对称性多极势场对电子结构的影响已经比较明显:除了上述的轨道有序化以外,eg分量的位置下移,宽度明显变窄,呈现局域化的趋势;两种不同LDA+U方法计算得出的电荷转移能隙分别为337eV(DFT)和25eV(SIC).同时发现在NiO中,上、下Hubbard带实际上是由占据的和非占据的3deg轨道构成,3dt2g轨道和O2p轨道的杂化带具有较大的带宽,因而也具有一定的巡游特性.结果表明在NiO中有特征明显的3d电子轨道有序化.通过研究得出结论:在NiO这一类体系的电子结构计算中,势场的非球对称性部分和球间区势场的作用,以及轨道极化等因素都应该恰当地处理 关键词： 关联电子系统 过渡金属氧化物 电子结构     

过渡金属(Ni)掺杂ZnV2O4的第一性原理计算

采用基于密度泛函理论下的MS软件模拟了过渡金属Ni掺杂ZnV₂O₄前后的能带结构、态密度以及光学性质.结果表明：ZnV₂O₄具有间接的光学跃迁且能带间隙为0.355 eV,Ni掺杂后能带间隙增加为0.785 eV,且带隙类型不变,引入的Ni-3d轨道电子对ZnV₂O₄的价带和导带组成提供了较大贡献.光学性质结果表明ZnV₂O₄为一种低介电材料,在可见光区的吸收系数和折射率较低,主要表现为紫外吸收.掺杂Ni后,在可见光区的吸收特性和光电导率均增大,有效改善了ZnV₂O₄在可见光区的光电性能.     

Reflectometric study of dangling-bond surface states and oxygen adsorption on the clean Si(111)7 × 7 surface

External differential reflection measurements were carried out on clean Si (111)7 × 7 surfaces in the photon-energy range of 1.0–3.0 eV at 300 and 80 K. The results at 300 K showed a main peak in the joint density-of-states curve for optical transitions from the filled dangling-bond surface-states band to empty bulk-conduction band levels at 2.9 ± 0.1 eV and a shoulder at the low-energy side. At 80 K the shoulder sharpened to a real second peak at 1.76 ± 0.04 eV. Oxygen adsorption in the submonolayer region appeared to take place preferentially on the surface atoms which were responsible for the second peak.     

Surface photovoltage spectroscopy of electronic surface states on cleaved germanium(111) surfaces

Surface photovoltage (SPV) measurements on UHV cleaved Ge(111) surfaces at 100 K are reported for photon energies 0.4 < ?ω < 1 eV. The SPV spectra are sensitive to surface treatment. Upon annealing to temperatures above 200°C, which is accompanied by a reconstruction change from the (2 × 1) to an (8) superstructure, the SPV spectrum shows 2 shoulders below band gap energy with threshold energies near 0.4 and 0.45 eV. These structures are interpreted in terms of electronic transitions from the valence band into empty surface state levels which are related to the (8) superstructure. Adsorbed oxygen and water vapor both cause new similar transitions from the valence band into empty surface states at 0.08 eV below the bottom of the conduction band.     

Band gap and edge engineering via ferroic distortion and anisotropic strain: the case of SrTiO(3)

The effects of ferroic distortion and biaxial strain on the band gap and band edges of SrTiO(3) are calculated by using density functional theory and many-body perturbation theory. Anisotropic strains are shown to reduce the gap by breaking degeneracies at the band edges. Ferroic distortions are shown to widen the gap by allowing new band edge orbital mixings. Compressive biaxial strains raise band edge energies, while tensile strains lower them. To reduce the SrTiO(3) gap, one must lower the symmetry from cubic while suppressing ferroic distortions. Our calculations indicate that, for engineered orientation of the growth direction along [111], the SrTiO(3) gap can be controllably and considerably reduced at room temperature.     

Strain Effects on Properties of Phosphorene and Phosphorene Nanoribbons: a DFT and Tight Binding Study

We perform comprehensive density functional theory calculations of strain effect on electronic structure of black phosphorus(BP) and on BP nanoribbons. Both uniaxial and biaxial strain are applied, and the dramatic change of BP's band structure is observed. Under 0-8% uniaxial strain, the band gap can be modulated in the range of 0.55-1.06 eV, and a direct-indirect band gap transition causes strain over 4% in the y direction. Under 0-8% biaxial strain, the band gap can be modulated in the range of 0.35-1.09 eV, and the band gap maintains directly.Applying strain to BP nanoribbon, the band gap value reduces or enlarges markedly either zigzag nanoribbon or armchair nanoribbon. Analyzing the orbital composition and using a tight-binding model we ascribe this band gap behavior to the competition between effects of different bond lengths on band gap. These results would enhance our understanding on strain effects on properties of BP and phosphorene nanoribbon.     

The structural,electronic, and optical properties of organic–inorganic mixed halide perovskites CH_3NH_3Pb(I_(1-y)X_y)_3(X = Cl,Br)

Methylammmonium lead iodide perovskites(CH_3NH_3PbI_3) have received wide attention due to their superior optoelectronic properties. We performed first-principles calculations to investigate the structural, electronic, and optical properties of mixed halide perovskites CH_3NH_3Pb(I_(1-y)X_y)_3(X = Cl, Br; y = 0, 0.33, 0.67). Our results reveal the reduction of the lattice constants and dielectric constants and enhancement of band gaps with increasing doping concentration of Cl-/Br-at I-. Electronic structure calculations indicate that the valance band maximum(VBM) is mainly governed by the halide p orbitals and Pb 6 s orbitals, Pb 6 p orbitals contribute the conduction band minimum(CBM) and doping does not change the direct semiconductor material. The organic cation [CH_3NH_3]~+does not take part in the formation of the band and only one electron donates to the considered materials. The increasing trends of the band gap with Cl content from y = 0(0.793 eV) to y = 0.33(0.953 eV) then to y = 0.67(1.126 eV). The optical absorption of the considered structures in the visible spectrum range is decreased but after doping the stability of the material is improving.     

Fe-N共掺杂锐钛矿相TiO2电子性质与光学性质的第一性原理研究

近年来,Fe和N掺杂锐钛矿相TiO2半导体在实验中发现许多优异性能,本文采用基于密度泛函理论的平面波超软赝势方法研究了纯锐钛矿相TiO2、Fe和N单掺杂及Fe和N共掺杂TiO2的能带结构、电荷布居、态密度和光学性质.分析发现:Fe掺杂引起杂质能带位于禁带中央,杂质能带最高点与导带相距大约0.6 eV而最低点与价带相距大约0.2 eV;N掺杂引起的杂质能带位于价带顶部附近. Fe和N共掺杂后杂质能带由两部分组成,位于价带顶上方0.62 eV和导带底下方0.22 eV处,其中一层杂质能带主要由N原子的2p轨道和Fe原子的3d轨道杂化形成,而另一条杂质能带主要由Fe原子的3d轨道形成,由于杂质能级的出现,使锐钛矿TiO2的禁带宽度变小.对光学性质分析发现:Fe和N共掺杂会使锐钛矿TiO2光学吸收带边红移,可见光区的光吸收系数明显增大,在低能区出现了新的吸收峰,对应能量为1.82 eV,与实验结果相符.     

Surface Verwey transition in magnetite

We report density functional studies of the (001) surface of magnetite that account for local Coulomb interactions. Iron cations in the surface layers exhibit charge and t2g orbital ordering that is coupled with the lattice strains. Orbital ordering is present for various surface stoichiometries and causes opening of the band gap Eg approximately 0.3 eV at the surface, such that the (001) surface of Fe3O4 remains insulating also in the high temperature cubic phase. The (radical 2 x radical 2)R45 degrees surface reconstruction is related to orbital ordering.