Domain walls in antiferromagnetically coupled multilayer films

We report experimentally observed magnetic domain-wall structures in antiferromagnetically coupled multilayer films with perpendicular anisotropy. Our studies reveal a first-order phase transition from domain walls with no net moment to domain walls with ferromagnetic cores. The transition originates from the competition between dipolar and exchange energies, which we tune by means of layer thickness. Although observed in a synthetic antiferromagnetic system, such domain-wall structures may be expected to occur in A-type antiferromagnets with anisotropic exchange coupling.     

Anisotropic domain-wall dynamics in proton-irradiated KH2PO4

KH₂PO₄ single crystals have been studied by employing complex impedance measurements in view of the domain freezing effect. As a result, distinct behaviors of the anisotropic domain-wall dynamics in the activation energy of domain freezing and the Vogel–Fulcher temperature before and after proton irradiation have been identified in the anisotropic crystal structure.     

Step instability of the In_0.2Ga_0.8As （001） surface during annealing

Anisotropic evolution of the step edges on the compressive-strained In0.2Ga0.8 As/GaAs(001) surface has been investigated by scanning tunneling microscopy (STM). The experiments suggest that step edges are indeed sinuous and protrude somewhere a little way along the [110] direction, which is different from the classical waviness predicted by the theoretical model. We consider that the monatomic step edges undergo a morphological instability induced by the anisotropic diffusion of adatoms on the terrace during annealing, and we improve a kinetic model of step edge based on the classical Burton–Cabrera–Frank (BCF) model in order to determine the normal velocity of step enlargement. The results show that the normal velocity is proportional to the arc length of the peninsula, which is consistent with the first result of our kinetic model. Additionally, a significant phenomenon is an excess elongation along the [110] direction at the top of the peninsula with a higher aspect ratio, which is attributed to the restriction of diffusion lengths.     

Step instability of the In0.2Ga0.8As （001） surface during annealing

Anisotropic evolution of the step edges on the compressive-strained In0.2Ga0.8 As/GaAs(001) surface has been investigated by scanning tunneling microscopy (STM). The experiments suggest that step edges are indeed sinuous and protrude somewhere a little way along the [110] direction, which is different from the classical waviness predicted by the theoretical model. We consider that the monatomic step edges undergo a morphological instability induced by the anisotropic diffusion of adatoms on the terrace during annealing, and we improve a kinetic model of step edge based on the classical Burton–Cabrera–Frank (BCF) model in order to determine the normal velocity of step enlargement. The results show that the normal velocity is proportional to the arc length of the peninsula, which is consistent with the first result of our kinetic model. Additionally, a significant phenomenon is an excess elongation along the [110] direction at the top of the peninsula with a higher aspect ratio, which is attributed to the restriction of diffusion lengths.     

MULTIPLE CLUSTER GROWTH OF ULTRA-THIN FILMS WITH ANISOTROPIC EDGE DIFFUSION

The multiple cluster growth of ultra-thin films on a hexagonal substrate with fractal, dendritic and compact morphology has been studied by computer simulation. The influence of the different diffusion processes along island edges on the island shape has been investigated. The results show that the anisotropic corner diffusion induces the dendritic growth, and the anisotropic step diffusion can promote the anisotropic growth and cause the ramified islands growing in three directions. In the case of compact growth, the island shape is mainly determined by the anisotropic corner crossing process. The nonuniform distribution of the multiple cluster formation can be described quantitatively by multifractal. With patterns changing from fractal to compact islands, the width and height of the bell-like or hook-like multifractal spectra increase, while the top f(α) decreases.     

One-dimensional metal structures at decorated steps

It is shown how wire structures a few nanometers wide can be fabricated by decorating step edges at vicinal surfaces. Their growth modes and electronic states are studied using Scanning Tunneling Microscopy (STM) and inverse photoemission. The observed growth modes are two-dimensional analogs of Stranski-Krastanov growth and layer-by-layer growth in three dimensions, e.g., for Cu on stepped Mo(1 1 0) and W(1 1 0), respectively. Contrast between different metals is achieved in STM pictures by resonant tunneling via surface states and image states, with the latter providing a map of the work function. The limit of single atomic rows decorating step edges is studied by inverse photoemission, and an energy shift of 0.4 eV is found for electronic states of step atoms. We expect stripe structures to become useful for the study of two- vs one-dimensional magnetism, for magnetoresistive films, and in the design of anisotropic materials.     

Finding polymorphic structures during vicinal surface growth

A hybrid scheme is developed to describe vicinal surface growth during epitaxy on two different time and length scales. For this purpose this algorithm combines two modules based on a continuum and an atomistic approach. The continuum module is realized by a phase-field-model which traces back to the Burton–Cabrera–Frank theory, the atomistic module is based on the anisotropic Ising model which is mapped onto a lattice-gas model. The latter provides thermal density fluctuations resulting in adatom clustering. With increasing temperature the probability for island nucleation on the terraces decreases according to 1-p where p is an Arrhenius-type activation probability which prevents clusters from becoming islands. Within this framework it is possible to find the transition from a rough surface at low temperatures to an evenly stepped surface at high temperatures where slight step meandering is observed. Furthermore two competing mechanisms of step bunching are investigated within this scale bridging algorithm: alternating anisotropic diffusion and different Ehrlich–Schwoebel barriers at the step edges. It is shown that a simulation of step bunching displaying the full variety of phenomena observed in experiments can only be achieved by the consideration of different time and length scales.     

Novel nanostructuring of the O/Cu(110) surface by reaction to oxygen

We present a scanning tunneling microscopy (STM) study of the reactivity to oxygen of the O/Cu(110) surface nanostructured with alternating oxidized and clean Cu stripes leading to novel nanostructuring by troughs made of missing top-most Cu atoms. The copper atoms extracted from these troughs are participating to the added-row reconstruction of the surface. The oxidation of the nanostructured surface proceeds by enlargement of the oxidized stripes and by oxidation of the troughs until the surface is fully covered by oxygen. At saturation, the trough arrangement, templated by the oxygen-free stripes, led to a novel nanostructure of the O/Cu(110) surface made of the (2 × 1) phase only.A limited influence of the step density was found as the nanostructuration blocks almost all the primary sources of copper atoms at the step edges. In this case, the troughs became the spare source feeding the reconstruction. Careful analysis of the trough distribution in the vicinity of step edges and on terraces shows clear indication of an anisotropic diffusion of the copper adatoms at the surface.     

一种抑制合成孔径雷达图像相干斑的各向异性扩散滤波方法

本文提出了一种抑制合成孔径雷达图像乘性相干斑噪声的各向异性扩散滤波新方法.该方法将受自适应耦合函数控制的平均曲率运动嵌入到传统相干斑抑制的各向异性扩散方程中,形成了一种可有效抑制边缘区域相干斑与同质区块效应现象的各向异性扩散新方程,同时在新建的扩散方程中,引入了由改进Frost滤波与局部方向比率联合构建的一种带方向约束的新扩散函数,进一步削弱了块效应现象且明显改善了抑斑图像的边缘抖动扭曲问题.实验结果表明该方法在有效保护图像边缘的同时,能充分平滑同质区与边缘区域的相干斑,明显削弱块效应现象,有效改善抑斑图像边缘抖动扭曲问题,而抑斑图像无论视觉效果还是参数指标均比多种传统抑斑方法更具优势.     

Hall micromagnetometry of domain-wall depinning in Permalloy nanowires

Experimental results of field-induced domain-wall depinning in Permalloy nanowires of submicron width and thicknesses between 10 and 30 nm are presented. Single domain walls pinned at notches in nanowires are detected by Hall micromagnetometry. The technique allows to study domain-wall propagation and depinning non-invasively in the temperature range between 2 and 50 K. The influence of sample thickness on domain-wall propagation properties is investigated. In nanowires with two notches of different pinning strength single domain walls are pinned in a toggle mode. The temperature dependence of domain-wall depinning fields in two-notch wires is analyzed.     

Spin drift velocity, polarization, and current-driven domain-wall motion in (Ga,Mn)(As,P)

Current-driven domain-wall motion is studied in (Ga,Mn)(As,P) ferromagnetic semiconducting tracks with perpendicular anisotropy. A linear steady state flow regime is observed over a large temperature range of the ferromagnetic phase (0.1T(c)相似文献   

Magneto-resistance of NiFe nanowire with zigzag shape

The anisotropic magneto-resistance (AMR) contributions of a zigzag-shaped NiFe wire were investigated. The magneto-resistance (MR) behaviors in different magnetic-field directions clearly reflect the angular relationships between the directions of the current and magnetic moment in the subdivisions. The resistance in remanence after magnetization along 0° in respect to the longer direction of zigzag was larger than that along 90°. Assumed that the difference appears due to the AMR contribution in the domain wall trapped at the corner, the MR ratio was estimated to be 1.2%, which is in good agreement with the AMR of the NiFe film. We clearly showed that the domain-wall resistance originates in the AMR.     

各向异性矩形悬臂板稳态热传导解析

应用各向异性稳态热传导解析解分析了三边对流换热、另一边给定不均匀温度的各向异性矩形悬臂板温度场。讨论了各向异性角对温度场分布的影响。各向异性角的增大加剧了温度梯度。数值结果表明各向异性角为0°的悬臂板内温度梯度最小。     

A model for solid-state dewetting of a fully-faceted thin film

Owing to their extremely aspect ratios, most thin films are unstable and when they are heated, they will dewet or agglomerate to form islands. This process can occur in the solid state through capillary-driven surface self-diffusion. A key feature of the dewetting process is the retraction of the edges of the film, either natural edges, patterned edges, or edges where holes have formed. Models of edge retraction have been previously developed for isotropic materials and anisotropic materials with differentiable surfaces, but the effects of faceting in highly anisotropic materials have been largely unexplored. Here, we present a two-dimensional model of edge retraction for highly anisotropic, fully-faceted thin films. This model shows generally good agreement with experimental results for edge retraction of single-crystal Ni films on MgO. In both experiments and the model, rims form as the edges retract. The effects of adjusting various physical parameters on the edge retraction rate and the evolving rim geometry were explored using the model. The film thickness, surface self-diffusivity on the top facet of the rim, the equivalent contact angle of the film on the substrate, and the absolute value of the surface energies were found to be the factors that have the greatest influence on the edge retraction rate. In isotropic models and some experimental systems, valleys form ahead of the retracting rims and deepen to contact the substrate and cause pinch-off. Our model suggests that this form of pinch-off will not occur when the rim is fully faceted and the top surface is an equilibrium facet. However, pinch-off can occur through film thinning and for films with top surfaces that do not form flat equilibrium facets.     

Robust one-dimensional metallic band structure of silicide nanowires

Angle-resolved photoemission (ARP) is employed to investigate the electronic structure of an extremely anisotropic form of nanocrystals--GdSi(2-x) nanowires on Si(100). Using a stepped Si(100) surface, a well-ordered and uniformly oriented array of nanowires is formed along the step edges as confirmed by diffraction and microscopy. The ARP measurement discloses two distinct electronic bands near the Fermi level, which disperse one dimensionally along the nanowires. These bands are metallic with the electron filling of 1/4 and 2/5, respectively, and with the effective mass close to that of a free electron along the wires. The metallicity is robust down to 20 K, in contrast to metallic surface atomic chain systems, paving a way to further studies on one-dimensional physics of metallic nanowires.     

Interplay between domain-wall resistance and surface scattering in ferromagnetic thin films

A positive domain-wall resistance at low temperatures has been reported in the literature for cobalt films with a perpendicular magnetic easy axis, in contrast to the behavior observed in microstructures made from cobalt, iron, and permalloy films with an in-plane easy axis and to that seen in perpendicular iron–palladium thin-film compounds. This phenomenon is unexpected if only domain-wall or Fermi-surface properties are considered. It can, however, be understood if an existing domain-wall resistance is considered which is compensated by a magnetoresistance effect arising from surface scattering in a thin film with closure domains. A theory that properly accounts for this interplay between domain-wall resistance and surface scattering is presented and employed to analyze existing experimental data. PACS 75.60.Ch; 75.70.Ak; 75.70.Pa     

Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga,Mn)As

Current-induced domain-wall motion with velocity spanning over 5 orders of magnitude up to 22 m/s has been observed by the magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.     

Minimization of Ohmic losses for domain wall motion in a ferromagnetic nanowire

We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain-wall velocity we find the time dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic.     

Dynamics of domain-wall motion in ferroelectric liquid crystals in an electric field

The director reorientation in smectic liquid crystals with ferroelectric properties has been considered in the case where the interaction of liquid-crystal molecules with the surface leads to a partial unwinding of the helical structure of the liquid crystal and the reorientation occurs as a result of the domain-wall motion. The dependences of the velocity of domain-wall motion on the electric field strength, electric field variation frequency, boundary conditions, spontaneous polarization, and viscosity of the liquid crystal have been determined. It has been demonstrated that an increase in the electric field variation frequency or the polar part of the anchoring energy and the spontaneous polarization of the liquid crystal at a constant field frequency results in an increase of the velocity of domain-wall motion. As a consequence, the time of the electro-optic response of the liquid crystal in weak electric fields (from 0.4 to 2.0 V/μm) decreases by a factor of more than three.     

Bi2Te3: implications of the rhombohedral k-space texture on the evaluation of the in-plane/out-of-plane conductivity anisotropy

Different computational scheme for calculating surface integrals in anisotropic Brillouin zones are compared. An example of the transport distribution function (plasma frequency) of the thermoelectric material Bi(2)Te(3) near the band edges is discussed. The layered structure of the material together with the rhombohedral symmetry causes a strong anisotropy of the transport distribution function for the directions in the basal plane (in-plane) and perpendicular to the basal plane (out-of-plane). It is shown that a thorough reciprocal space integration is necessary to reproduce the in-plane/out-of-plane anisotropy. A quantitative comparison can be made at the band edges, where the transport anisotropy is given in terms of the anisotropic mass tensor.