Spin mixing and spin-current asymmetry measured by domain wall magnetoresistance

By making a straightforward reformulation of the Levy-Zhang spin-mistracking model, we show that it is possible to extract the spin asymmetry of a current from measurements of domain wall resistance. Experiments on epitaxial films of L1(0) FePd are reported, showing that, while the micromagnetic structure of the sample is stable, the resistivity and the domain wall resistance change by a factor approximately 3 between helium and room temperature. The temperature dependence of the spin asymmetry of the current has been determined over a wide range in a single material.     

Domain structure of double layer single crystal films of iron

The domain structures of multilayered films consisting of mutually parallel single crystal (001) Fe layers and an LiF intermediate layer were studied by Lorentz microscopy. Magnetic flux transitions from layer to layer and formation of extraordinary domain walls were observed in systems with magnetic layers approximately equal in thickness. The effect of the adjacent layer on the 180° wall structure was observed.Died November 3rd, 1969.     

Domain wall creep in epitaxial ferroelectric Pb(Zr(0.2)Ti(0.08)O(3) thin films

Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr(0.2)Ti(0.8))O(3) thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism, in which initial nucleation is followed by radial domain wall motion perpendicular to the polarization direction. The electric field dependence of the domain wall velocity demonstrates that domain wall motion in ferroelectric thin films is a creep process, with the critical exponent mu close to 1. The dimensionality of the films suggests that disorder is at the origin of the observed creep behavior.     

Nanometer scale observation of high efficiency thermally assisted current-driven domain wall depinning

Nanometer scale observation of the depinning of a narrow domain wall (DW) under a spin current is reported. We studied approximately 12 nm wide 1D Bloch DWs created in thin films exhibiting perpendicular magnetic anisotropy. Magnetotransport measurements reveal thermally assisted current-driven DW motion between pinning sites separated by as little as 20 nm. The efficiency of current-driven DW motion assisted by thermal fluctuations is measured to be orders of magnitude higher than has been found for in-plane magnetized films, allowing us to control DW motion on a nanometer scale at low current densities.     

Anisotropy of domain wall resistance

The resistive effect of domain walls in FePd films with perpendicular anisotropy was studied experimentally as a function of field and temperature. The films were grown directly on MgO substrates, which induces an unusual virgin magnetic configuration composed of 60 nm wide parallel stripe domains. This allowed us to carry out the first measurements of the anisotropy of domain wall resistivity in the two configurations of current perpendicular and parallel to the walls. At 18 K, we find 8.2% and 1.3% for the domain wall magnetoresistance normalized to the wall width (8 nm) in these two respective configurations. These values are consistent with the predictions of Levy and Zhang.     

Roughness of stylolites: implications of 3D high resolution topography measurements

Stylolites are natural pressure-dissolution surfaces in sedimentary rocks. We present 3D high resolution measurements at laboratory scales of their complex roughness. The topography is shown to be described by a self-affine scaling invariance. At large scales, the Hurst exponent is zeta(1) approximately 0.5 and very different from that at small scales where zeta(2) approximately 1.2. A crossover length scale at around L(c)=1 mm is well characterized. Measurements are consistent with a Langevin equation that describes the growth of a stylolitic interface as a competition between stabilizing long range elastic interactions at large scales or local surface tension effects at small scales and a destabilizing quenched material disorder.     

Effect of 90° domain walls on the low-field permittivity of PbZr(0.2)Ti(0.8)O3 thin films

We report on the contribution of 90° ferroelastic domain walls in strain-engineered PbZr(0.2)Ti(0.8)O(3) thin films to the room-temperature permittivity. Using a combination of phenomenological Ginzburg-Landau-Devonshire polydomain thin-film models and epitaxial thin-film growth and characterization, the extrinsic or domain wall contribution to the low-field, reversible dielectric response is evaluated as a function of increasing domain wall density. Using epitaxial thin-film strain we have engineered a set of samples that possess a known quantity of 90° domain walls that act as a model system with which to probe the contribution from these ferroelastic domain walls. We observe a strong enhancement of the permittivity with increasing domain wall density that matches the predictions of the phenomenological models. Additionally, we report experimentally measured bounds to domain wall stiffness in such PbZr(0.2)Ti(0.8)O(3) thin films as a function of domain wall density and frequency.     

Anomalous magnetization processes and non-symmetrical domain wall displacements in L10 FePt particulate films

Anomalous magnetization processes and non-symmetrical domain wall displacements in the minor loop of L1₀ FePt particulate films were investigated by magnetization measurements and in situ magnetic force microscopy. Magnetization (M) decreases dramatically on increasing the magnetic field to ∼3 kOe after which M becomes small and constant in the range of 5–20 kOe as observed in the successive measurement of minor loops. The domain wall displacement is non-symmetrical with respect to the field direction. The anomalous magnetization behavior was attributed to the non-symmetrical domain wall displacement and large magnetic field required for domain wall nucleation. Energy calculations from modeling suggest that non-symmetrical domain wall displacement is caused by the existence of metastable domains in which the domain edges are stuck to the particle boundaries.     

Remanence due to wall magnetization and counterintuitive magnetometry data in 200-nm films of Ni

200-nm-thick Ni films in an epitaxial Cu/Ni/Cu/Si(001) structure are expected to have an in-plane effective magnetic anisotropy. However, the in-plane remanence is only 42%, and magnetic force microscopy domain images suggest perpendicular magnetization. Quantitative magnetic force microscopy analysis can resolve the inconsistencies and show that (i) the films have perpendicular domains capped by closure domains with magnetization canted at 51 degrees from the film normal, (ii) the magnetization in the Bloch domain walls between the perpendicular domains accounts for the low in-plane remanence, and (iii) the perpendicular magnetization process requires a short-range domain wall motion prior to wall-magnetization rotation and is nonhysteretic, whereas the in-plane magnetization requires long-range motion before domain-magnetization rotation and is hysteretic.     

Current driven domain wall velocities exceeding the spin angular momentum transfer rate in permalloy nanowires

The velocity of domain walls driven by current in zero magnetic field is measured in permalloy nanowires using real-time resistance measurements. The domain wall velocity increases with increasing current density, reaching a maximum velocity of approximately 110 m/s when the current density in the nanowire reaches approximately 1.5 x 10(8) A/cm(2). Such high current driven domain wall velocities exceed the estimated rate at which spin angular momentum is transferred to the domain wall from the flow of spin polarized conduction electrons, suggesting that other driving mechanisms, such as linear momentum transfer, need to be taken into account.     

On the domain structure of thin ferromagnetic films

The energy of Bloch walls is calculated for very thin ferromagnetic films with respect to the demagnetizing energy of a Bloch wall. A model of the stability of the domain structure in thin films is proposed.Part of this paper was delivered at the conference of solid state physics in Sopoty (Poland) November 5–11th, 1956.     

On the velocity of an end domain wall in (Bi,Lu)3(Fe,Ga)5O12 single-crystal films with (210) orientation

The mobility of an end domain wall in (Bi,Lu)₃(Fe,Ga)₅O₁₂ single-crystal garnet ferrite films with (210) orientation is determined by the photoresponse method. It is shown that the mobility of end domain walls in these films is considerably higher than that in (111) single-crystal garnet ferrite films free of rapidly relaxing ions.     

Magnetic anisotropies and coupling mechanisms in Fe/Mo(110) nanostripes

Using low-temperature (5 K) spin-polarized scanning tunneling microscopy, we have studied the morphology and magnetic properties of monolayer (ML) and double layer (DL) thick Fe nanowires grown by step flow on a Mo(110) single crystal. Magnetic contrast has been obtained using tungsten tips covered by Au/Co thin films. We find that the DL Fe nanowires, similarly to ML Fe nanowires, are perpendicularly magnetized. Because of the dipolar coupling, separated DL Fe nanowires are antiferromagnetically coupled. DL wires that are touching at step edges are ferromagnetically ordered due to direct exchange coupling. We measured the widths of the magnetic domain walls in the ML and DL Fe nanowires. The domain wall width increases with the thickness of Fe.     

On the breakdown of stationary motion of a domain wall in bilayer uniaxial magnetic films with different signs of the gyromagnetic ratio in layers

The motion of an isolated domain wall in bilayer uniaxial magnetic films with a gyromagnetic ratio of different sign in the layers is studied by numerically solving the Slonczewski equations. The gyromagnetic ratio and the thickness of the layers are varied, and threshold values of the field and velocity of the domain wall at which a breakdown of its stationary motion takes place are calculated. It is shown that, for a specific relationship between the thickness and the gyromagnetic ratio of the layers, the field and the velocity for the breakdown of the stationary motion of the domain wall increase infinitely.     

Ultracold Gases and Quantum Information: Lecture Notes of the Les Houches Summer School in Singapore,edited by C. Miniatura,L-C. Kwek,M. Ducloy,B. Grémaud,B-G. Englert,L.F. Cugliandolo,A. Ekert and K. K. Phua

Measurements of the Faraday magneto-optical effect and of optical absorption in magnetic garnet crystals and films are reviewed. Earlier work was restricted to measurements in the visible spectrum; these measurements showed that the transparency was sufficient to allow magnetic domains to be studied in relatively thick slabs. Within the last year or so interest has been renewed in extending magneto-optical measurements beyond the visible spectrum. In particular, extremely low absorptions are found in the wavelength range of approximately 1–5 microns. Thie work is, in no small way, spurred by the possibility of developing a light-beam modulator using the Faraday effect in this wavelength range. Recent measurements at very short wavelengths using garnet films are also reported. By extending the short wavelength measurements to 3000 Å, about two orders of magnitude increase in Fareday rotation and optical absorption are observed, compared with the visible spectrum measurements.

The Faraday effect has been used to measure magnetic hysteresis loops in single-crystal garnet slabs. Magneto-optical observation of the corresponding domain structures shows them to be particularly simple. Detailed correlation of domain structure and hysteresis loops is described; in addition, an estimate of the domain wall energy and its width is made from these measurements.

The garnets referred to in this review are yttrium iron garnet (YIG), gadolinium iron garnet (GdIG), and YIG doped with gallium (YGaIG).     

Magnetization reversal in (0 0 1)Fe thin films studied by combining domain images and MOKE hysteresis loops

The magnetization reversal of epitaxial single-crystal Fe films has been studied by combining domain images and hysteresis loops. The reversal is quantitatively described by combining the coherent rotation model and the domain wall displacement model. The pinning energy exerted on the domain walls and the domain wall angle at the switching fields are obtained by fitting this model to experimental hysteresis loops. The field-dependent pinning energy and the domain wall angle in the reversal process, and the contributions of second-order magneto-optic effect to hysteresis loops, are revealed to be two important features of single-crystal Fe films.     

Magnetization reversal in a preferred oriented (111) L1(0) FePt grown on a soft magnetic metallic glass for tilted magnetic recording

L1(0) FePt is an important material for the fabrication of high density perpendicular recording media, but the ultrahigh coercivity of L1(0) FePt restricts its use. Tilting of the magnetic easy axis and the introduction of a soft magnetic underlayer can solve this problem. However, high temperature processing and the requirement of epitaxial growth conditions for obtaining an L1(0) FePt phase are the main hurdles to be overcome. Here, we introduce a bilayered magnetic structure ((111) L1(0) FePt/glassy Fe(71)Nb(4)Hf(3)Y(2)B(20)/SiO(2)/Si) in which the magnetic easy axis of L1(0) FePt is tilted by ~36° from the film plane and epitaxial growth conditions are not required. The soft magnetic underlayer not only promotes the growth of L1(0) FePt with the preferred orientation but also provides an easy cost-effective micro/nanopatterning of recording bits. A detailed magnetic characterization of the bilayered structure in which the thickness of (111) L1(0) FePt with the soft magnetic Fe(71)Nb(4)Hf(3)Y(2)B(20) glassy underlayer varied from 5 to 60 nm is carried out in an effort to understand the magnetization switching mechanism. The magnetization switching behavior is almost the same for bilayered structures in which FePt layer thickness is >10 nm (greater than the domain wall thickness of FePt). For FePt film ~10 nm thick, magnetization reversal takes place in a very narrow field range. Magnetization reversal first takes place in the soft magnetic underlayer. On further increase in the reverse magnetic field, the domain wall in the soft magnetic layer compresses at the interface of the hard and soft layers. Once the domain wall energy becomes sufficiently large to overcome the nucleation energy of the domain wall in L1(0) FePt, the magnetization of the whole bilayer is reversed. This process takes place quickly because the domain walls in the hard layer do not need to move, and the formation of a narrower domain wall may not be favorable energetically. Our results showed that the present bilayered structure is very promising for the fabrication of tilted bit-patterned magnetic recording media.     

An investigation of time-dependent domain wall pinning effects in Tb/Fe multilayer thin films

Reverse domain nucleation time measurements have been performed on two Tb/Fe multilayer magneto-optic films exhibiting different degrees of domain wall pinning. A linear relationship between ln (reverse domain nucleation time) and the applied field has been predicted and observed for a sample exhibiting weak domain wall pinning. This is in agreement with theoretical work presented which addresses time dependence in systems possessing weak domain wall pinning. A non-linear relationship applicable over a restricted field range has been derived for a sample exhibiting strong domain wall pinning. Experimental results have indicated that this relationship is also valid.     

Structural and magnetic properties of FePt films grown on Cr1-xMox underlayers

FePt films were deposited on Cr_1-xMo_x underlayers by dc magnetron sputtering. The effects of the Mo content in the underlayers, underlayer thickness, substrate temperature, and FePt film thickness on the structural and magnetic properties of the FePt films were studied. Experimental results showed that the (200) textured Cr₉₀Mo₁₀ film was a promising underlayer for promoting the growth of the L1₀ FePt films with (001) preferred orientation at relatively low temperatures. With the Cr₉₀Mo₁₀ underlayers, the ordering process of the FePt films could start at 200 °C. Both the ordering degree and the out-of-plane coercivity (H_c) of the FePt films increased with an increase in substrate temperature. When the substrate temperature was ≥250 °C, the FePt films grown on the Cr₉₀Mo₁₀ underlayers could have the (001) preferred orientation. The FePt films grown on the Cr₉₀Mo₁₀ underlayers at different temperatures showed a continuous microstructure. The out-of-plane coercivities H_c decreased while the ordering degree increased with increased FePt film thickness, which could be due to the variation of the magnetic reversal mechanism from rotation predominant mode to domain wall motion predominant mode. PACS 68.55.Jk; 75.50.Ss