铈降低在硫酸溶液中生长的阳极Pb(II)氧化物膜的电阻的研究

应用电化学阻抗频谱法、线性电位扫描法和光电流技术研究了在4.5 mol· dm~(-3) H_2SO_4溶液中Pb-1%(at.)Ce（简称Pb-1Ce）合金在0.9 V (vs. Hg/Hg_2SO_4电极)生长的阳极Pb(II)氧化物膜的电阻较纯铅的低的原因。实验结 果表明，Ce阻抑阳极Pb(II)氧化物膜的生长并增加其孔率，从而降低其电阻。     

阳极Pb(II)氧化物膜的阴极还原

采用X射线衍射、光电流谱、线性电位扫描和开路电位衰退等方法研究了Pb电 极在0.9 V(vs.Hg/Hg_2SO_4), 4.5 MOL/l h_2so_4溶液中生长2 h所得的阳极Pb (II)氧化物膜的阴极还原行为。实验结果表明；阳极Pb(II)氧化物膜主要由PbO微 粒和PbO·PbSO_4微粒组成，微粒间液膜可供离子输运；在LSV负向扫描过程中，阳 极Pb(II)氧化物膜是按溶解－沉积机理还原的，首先PbO微粒借助该微粒间的液膜 还原为金属铅，而待PbO微粒表面层转化的金属铅与PbO·PbSO_4微粒接触后，则 PbO·PbSO_4就和PbO一起还原，而以PbO·PbSO_4的还原进程略快。     

阳极Pb(II)氧化物膜的阴极还原

采用X射线衍射、光电流谱、线性电位扫描和开路电位衰退等方法研究了Pb电 极在0.9 V(vs.Hg/Hg_2SO_4), 4.5 MOL/l h_2so_4溶液中生长2 h所得的阳极Pb (II)氧化物膜的阴极还原行为。实验结果表明;阳极Pb(II)氧化物膜主要由PbO微 粒和PbO·PbSO_4微粒组成,微粒间液膜可供离子输运;在LSV负向扫描过程中,阳 极Pb(II)氧化物膜是按溶解－沉积机理还原的,首先PbO微粒借助该微粒间的液膜 还原为金属铅,而待PbO微粒表面层转化的金属铅与PbO·PbSO_4微粒接触后,则 PbO·PbSO_4就和PbO一起还原,而以PbO·PbSO_4的还原进程略快。     

铅锡合金在硫酸溶液中生长阳极Pb(Ⅱ)氧化物膜的机理

用交流阻抗、开路电位衰退及线性电位扫描等方法在0.9V(vs.Hg/Hg₂SO₄)和4.5mol/LH₂SO₄溶液中,研究了铅及Pb-Sn合金电极上所生长的阳极氧化物膜.实验结果表明,阳极膜由溶解-沉淀机理控制生长,膜中微粒间为液膜,借助液膜作为离子通道可使膜中微粒发生阳极反应,锡有利于膜中PbO微粒表层阳极氧化为PbO^1+x(0相似文献   

铅锑合金在硫酸溶液中的阳极膜IV.方波电位对阳极膜生长的影响

The effects of sq. wave potential on the growth rate of the anodic films on Pb-7 Sb and Pb-5 Sb-0.2 As in 4.5 mol/dm3 H2SO4 at 30?were studied by a cathodic linear potential sweep method. By applying the sq. wave potential with period of 3600 s, the potentials of the lead alloys were cycled between that corresponding to the charged conditions of a Pb-acid battery (3 different charge potentials were studied: 1.4, 1.3 and 1.2 V vs. Hg/Hg2SO4, resp.) and that to the discharged condition (1.0 V). The anodic films contain grains with many voids among them as observed with SEM. The surface layer of the grain is PbO2, however, the major constituent of the grain is probably PbO.PbSO4. The relation between the quantity of electricity used to form PbO.PbSO4 and the no. of charges is linear for a certain no. of charge-discharge cycles. The conductance of the film is mainly due to the high conductivity of the PbO2 boundary layers of the grains, especially when the grains are in close contact with one another under pressure.     

Pb及Pb-7w/O Sb合金在氧析出电位区生长的阳极膜

分别测量了Pb及Pb-7w/0Sb在4.5mol.dm^-^3H^2SO~4(30℃)中于1.3和1.5V(vs.Hg/Hg~2SO~4/4.5mol.dm^-^3H^2SO~4)下在不同时间生长的阳极膜的交流阻抗谱, 并使用线性电位扫描法分析了上述阳极膜的相组成。讨论了上述阳极膜进行的电化学反应的机理, 并据此提出它们的等效电路。实验结果表明上述阳极膜的真实表面积随生长时间而增加, 该膜多孔, 主要由外层为PbO~2的PbO.PbSO~4微粒组成, 锑能显著抑制PbO~2的生长, 特别是在1.3V时。     

Pb及Pb-7w/O Sb合金在氧析出电位区生长的阳极膜

分别测量了Pb及Pb-7w/0Sb在4.5mol·dm~(-3)H_2SO_4(30℃)中于1.3和1.5V(vs. Hg/Hg_2SO_4/4.5mol·dm~(-3)H_2SO_4)下在不同时间生长的阳极膜的交流阻抗谱,并使用线性电位扫描法分析了上述阳极膜的相组成。讨论了上述阳极膜进行的电化学反应的机理,并据此提出它们的等效电路。实验结果表明上述阳极膜的真实表面积随生长时间而增加,该膜多孔,主要由外层为PbO_2的PbO·PbSO_4微粒组成。锑能显著抑制PbO_2的生长,特别是在1.3V时。     

锑对在硫酸溶液中形成的阳极Pb(Ⅱ)氧化物膜的半导体性质的影响Ⅲ. 交流阻抗法研究阳极Sb~2O~3膜

应用交流阻抗方法研究锑在0.005mol.dm^-^3SO~4+0.5mol.dm^-^3Na~2So~4溶液(30℃)中以0.9V(vs.Hg/Hg~2SO~4/0.005mol.dm^3SO~4)生长3h的阳极Sb~2O~3膜的半导体性质.从Mott-schottky曲线可知.此膜 为n型半导体.平带电位为-0.34v(vs.Hg/Hg~2SO~4/0.005mol.dm^-^3SO~4).施主密度为4.0×19^1^9cm^-^3.讨论了锑增加铅锑合金极PbⅡ氧化物膜施主密度的原因.     

铅锑合金在硫酸溶液中的阳极膜II.电位对阳极膜生长的影响

本文使用线性电位扫描法还原预恒电位法氧化形成的阳极膜,研究电位对Pb-7Sb,Pb-7Sb-0.3Ag和Pb-5Sb-0.2As三种合金在30℃,4.5MH2SO4溶液中的阳极膜的生长速度的影响,在铅锑合金中添加银可降低合金阳极膜的生长速度,但在高电位1.4V(vs.Hg2SO4电极时,Pb-7Sb-0.3Ag合金上的PbO2膜的生长速度在上述三合金中居首,这可能是由于在银上的氧析出超电势较低的缘故,本文讨论了这种阳极膜的生长机理。     

添加铈对铅钙合金在硫酸溶液中电化学性能的影响

为了改善铅钙合金的耐腐蚀性能和提高铅蓄电池的循环寿命, 应用交流阻抗, 阳极极化曲线, 交流伏安, 恒流腐蚀等方法研究了在铅钙锡铝合金中添加铈对合金电化学性能的影响. 研究结果表明: 铈能提高合金的耐腐蚀能力, 添加铈使合金腐蚀膜的阻抗明显降低, 有利于缓解早期容量损失(PCL-1)现象, 实验电池的循环寿命也明显延长. 因此掺铈铅钙合金是一种性能优良的阀控式铅酸电池正极板栅合金材料.     

Effects of Samarium on the Properties of the Anodic Pb（Ⅱ） Oxides Film Formed on Pb in Sulfuric Acid Solution

The effects of samarium on the properties of the anodic Pb(II) oxides films formed on lead at 0.9 V (vs. Hg/Hg₂SO₄) in 4.5 mol/L H₂SO₄ solution were studied using linear sweep voltammetry (LSV), electrochemical impedance spectroscopy (EIS) and scanning electron micrographs (SEM). The experimental results show that adding Sm to lead metal can inhibit the growth of the Pb(II) oxides film effectively, and reduce the resistance of the PbO oxides film obviously. The addition of Sm increases the porosity of the anodic film, which may cause the increase of the ionic conductance produced by the interstitial liquid among the PbO particles in the film and lead to the decrease of the resistance of the anodic film.     

Effects of Samarium on the Properties of the Anodic Pb(II) Oxides Film Formed on Pb in Sulfuric Acid Solution

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铈对铅钙锡合金在硫酸溶液中阳极行为的影响

应用循环伏安法研究了Pb - 0 .5at %Ca - 1 .5at %Sn和含Ce的Pb - 0 .5at%Ca - 1 .5at%Sn合金电极在 4.5mol·dm- 3H2 SO4溶液中和 0 .6～ 1 .4V(vs .Hg/Hg2 SO4电极 )电位范围内的电化学特性 ,并采用线性电位扫描法和交流伏安法分别研究了上述合金在相同溶液中以 0 .9V(vs .Hg/Hg2 SO4电极 )生长的阳极Pb(Ⅱ )膜增长率和膜的阻抗实数部分 (Z’)变化 .结果表明 ,在铅合金中添加Ce对阳极Pb(Ⅱ )膜的生长有显著的抑制作用并降低铅阳极膜的Z’ .以上述两种合金作为正极板栅制作的铅蓄电池 ,含Ce的Pb Ca Sn合金的深充放循环性能明显优于Pb Ca Sn合金 .     

铅镧和铅钐合金在硫酸溶液中生长的阳极膜性质的研究

应用交流伏安法和线性电位扫描法研究了Pb ,Pb 1.0at%La和Pb 1.0at%Sm电极在硫酸溶液中以 0 .9V(vs .Hg/Hg2 SO4 )生长的阳极Pb(Ⅱ )膜增长率和膜的阻抗实部变化 ,并采用循环伏安法研究了它们在 0 .6～ 1.6V(vs.Hg/Hg2 SO4 )间的循环伏安特性 ,结果表明 :在铅中添加Sm有利于抑制铅的阳极腐蚀和降低阳极Pb(Ⅱ )膜的阻抗 ,La亦可降低阳极Pb(Ⅱ )膜的阻抗 ,但其作用不如Sm明显     

Effect of Ethanedioic Acid Additives on the Dissolution of Manganese Oxides in Sulfuric Acid Solution

The effect of ethanedioic acid additives on the rate of manganese(IV) oxide dissolution in sulfuric acid solutions was studied by kinetic and electrochemical methods. Interaction modes were established, and some details of the studied process mechanism were elucidated. Interaction schemes corresponding to the observed kinetic dependences were proposed.     

硫酸介质中Pb电极氧化物成长过程的研究

采用实时交流阻抗测量与激光扫描微区光电流技术相结合的现场方法,对铅电极在硫酸溶液中ＰｂＯ和ＰｂＯ＿２的生长过程进行了研究．发现电极在ＰｂＯ的形成区中氧化５ｍｉｎ后,电极欧姆阻抗和ｔ￣（１／２）呈一直线关系,这表明ＰｂＯ是均匀分布在电极表面而成长的．激光扫描微区光电流的实验进一步证实了这一结论．实验中还发现ＰｂＯ＿２在ＰｂＯ层中是局部发生与发展的．     

硫酸溶液中Ce3+在铂电极上阳极氧化动力学

用分解极化曲线法研究了铂电极上Ce（Ⅳ）阳极形成动力学与机理．实验结果表明，电位在1．7—1．9V（vs．SCE）的高极化区，分解得到的O2和Ce（Ⅳ）的极化曲线Tafel斜率分别为2．303RT／βF和2×2．303RT／βF，两者的动力学方程可分别用下式表示：
i(O2)=k1aw4exp(βφF/RT)
i(Ce4+)=k2aw2[Ce3+]exp(βφF/2RT)
假设了Ce3＋是通过反应中间基MCe（OH）3•Oad氧化的机理．由此所导出的动力学方程与实验结果相符．     

铅及铅锑合金阳极膜中硫酸铅的氧化过程

应用电位阶跃和交流阻抗法分别研究铅和Pb-5wt% Sb合金在4.5mol·dm^-^3H~2SO~4(30℃)中于1.3V(vs. Hg/Hg~2SO~4, 下同)生长20min后的阳极膜在0.9V还原5min后再在1.4V将膜中硫酸铅氧化的过程。实验结果表明在0.9V还原二氧化铅而得到的硫酸铅能在1.4V于1min内氧化为二氧化铅。这是由于此种硫酸铅处于硫酸铅颗粒表层的缘故。至于颗粒内部由铅直接生成的硫酸铅的氧化为二氧化铅就要缓慢得多。合金中的锑能使二氧化铅晶核形成和生长速率显著降低。     

硫酸溶液中胶束催化Ce(IV)氧化D-甘露糖

Kinetics of D-mannose oxidation by cerium (IV) was studied in a sulfuric acid medium at 40℃ both in absence and presence of ionic micelles. In both cases, the rate of the reaction was first-order in D-mannose and in cerium(Ⅳ), which decreased with increasing [H2SO4]. This suggested that the redox reaction followed the same mechanism. The reaction proceeded through formation of an intermediate complex, which was proved by kinetic method. The complex underwent slow unimolecular decomposition to a free radical that reacted with cerium (Ⅳ) to afford the product. The catalytic role of cationic cetyltrimethylammonium bromide (CTAB) micelles was best explained by the Menger-Portnoy model. The study of the effect of CTAB also indicated that a negatively charged species was reactive form of cerium (Ⅳ). From the kinetic data, micelle-cerium (Ⅳ) binding and rate constants in micellar medium were evaluated.The anionic micelle of sodium dodecyl sulfate plays no catalytic role. The oxidation has the rate expression --d[Ce(Ⅳ)]= k1Kcl[D-mannose] [Ce(Ⅳ)]dt Different activation parameters for micelle catalyzed and uncatalyzed paths were also calculated and discussed.