Numerical method of mixed finite volume-modified upwind fractional step difference for three-dimensional semiconductor device transient behavior problems

Transient behavior of three-dimensional semiconductor device with heat conduction is described by a coupled mathematical system of four quasi-linear partial differential equations with initial-boundary value conditions. The electric potential is defined by an elliptic equation and it appears in the following three equations via the electric field intensity. The electron concentration and the hole concentration are determined by convection-dominated diffusion equations and the temperature is interpreted by a heat conduction equation. A mixed finite volume element approximation, keeping physical conservation law, is used to get numerical values of the electric potential and the accuracy is improved one order. Two concentrations and the heat conduction are computed by a fractional step method combined with second-order upwind differences. This method can overcome numerical oscillation, dispersion and decreases computational complexity. Then a three-dimensional problem is solved by computing three successive one-dimensional problems where the method of speedup is used and the computational work is greatly shortened. An optimal second-order error estimate in L² norm is derived by using prior estimate theory and other special techniques of partial differential equations. This type of mass-conservative parallel method is important and is most valuable in numerical analysis and application of semiconductor device.     

Modification of upwind finite difference fractional step methods by the transient state of the semiconductor device

The mathematical model of the three‐dimensional semiconductor devices of heat conduction is described by a system of four quasi‐linear partial differential equations for initial boundary value problem. One equation of elliptic form is for the electric potential; two equations of convection‐dominated diffusion type are for the electron and hole concentration; and one heat conduction equation is for temperature. Upwind finite difference fractional step methods are put forward. Some techniques, such as calculus of variations, energy method multiplicative commutation rule of difference operators, decomposition of high order difference operators, and the theory of prior estimates and techniques are adopted. Optimal order estimates in L² norm are derived to determine the error in the approximate solution.© 2007 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 2008     

三维半导体问题的迎风有限体积格式

半导体器件的瞬时状态由包含三个拟线性偏微分方程所组成的方程组的初边值问题来描述.其中电子位势方程是椭圆型的,电子和空穴浓度方程是对流扩散型的.作者对三维半导体模型问题采用四面体网格上的有限体积元方法进行逼近,具体地,对电子位势方程采用一次元有限体积法来逼近,对电子浓度和空穴浓度方程采用迎风有限体积方法来逼近,并进行了详细的理论分析,得到了O(h+\Delta t)阶的L^2模误差估计结果.     

三维半导体器件问题在时空局部加密复合网格上的有限差分格式

半导体器件的瞬时状态由三个方程组成的非线性偏微分方程组的初边值问题决定,电子位势方程是椭圆型的,电子和空穴浓度方程是抛物型的．依据实际数值模拟的需要,提出了一类三维半导体问题在时间和空间上进行局部加密的复合网格上的有限差分形式,并给出了电子和空穴浓度的最大模误差估计,最后给出了数值算例．     

热传导型半导体问题的配置方法及误差分析

热传导型半导体瞬态问题的数学模型是一类非线性偏微分方程的初边值问题．电子位势方程是椭圆型的，电子、空穴浓度方程及热传导方程是抛物型的．该文给出求解的配置方法，得到次优犔２模误差估计，并将配置法和Ｇａｌｅｒｋｉｎ有限元方法进行数值结果比较．     

三维热传导型半导体器件瞬态模拟问题的Crank-Nicolson差分-流线扩散有限元法及其数值分析

本文研究三维热传导型半导体器件瞬态模拟问题的数值方法.针对数学模型中各方程不同的特点,分别提出不同的有限元格式.特别针对浓度方程组是对流为主扩散问题的特点,使用Crank-Nicolson差分-流线扩散计算格式,提高了数值解的稳定性.得到的L2误差估计关于空间剖分步长是拟最优的,关于时间步长具有二阶精度.     

二维热传导型半导体问题的一个二阶格式

热传导型半导体器件瞬态问题的数学模型由四个拟线性偏微分方程所组成的方程组的初边值问题来描述。其中电子位势方程是椭圆型的,电子和空穴浓度方程是对流扩散型的,温度方程为热传导型的。本文对二维热传导型半导体的一类混合初边值问题利用降阶法给出了一个二阶差分格式,并对其进行了详细的理论分析,得到了离散的犾２ 误差估计结果。     

半导体器件数值模拟的混合元逼近

半导体器件瞬时状态的模型由三个非线性偏微分方程组所决定.一个是关于电子位势的方程外型是椭圆的,另两个是关于电子和空穴浓度方程外型是抛物的,电子位势通过其电场强度在浓度方程中出现,以及相应的边界和初始条件.我们讨论平面区域Ω上的问题:     

半导体问题的向后差分配置法及误差分析

Collocation method is put forward to solve the semiconductor problem with heat-conduction, whose mathematical model is described by an initial and boundary problem for a nonlinear partial differential equation system. One elliptic equation is for the electric potential, and three parabolic equations are for the electron concentration, hole concentration and heat-conduction. Using the prior estimate and technique of differential equations, we obtained almost optimal error estimates in L2.     

半导体瞬态问题的修正迎风有限体积格式

半导体器件的瞬时状态由包含三个拟线性偏微分方程所组成的方程组的初边值问题来描述.其中电子位势方程足椭圆型的,电子和空穴浓度方程是对流扩散型的.对电子位势方程采用一次元有限体积法米逼近,对电子浓度和空穴浓度方程采用修正的迎风有限体积方法来逼近,并进行详细的理论分析,关于位势得到O(h Δt)阶的H1模误差估计结果,关于浓度得到O(h2 Δt)阶的L2模误差估计结果.最后,给出数值例子.     

A MIXED FINITE ELEMENT METHOD FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE

The transient behavior of a semiconductor device is described by a system of three quasilinear partial differential equations. One is elliptic in form for the electric potential and the other two are parabolic in form for the conservation of electron and hole concentrations. The electric potential equation is discretized by a mixed finite element method. The electron and hole density equations are treated by a Galerkin method that applies a variant of the method of characteristics to the transport terms. Optimal order convergence analysis in L2 is given for the proposed method.     

UPWIND FINITE VOLUME SCHEMES FOR SEMICONDUCTOR DEVICE

The mathematical model of semiconductor devices is described by the initial boundary value problem of a system of three nonlinear partial differential equations. One equation in elliptic form is for the electrostatic potential; two equations of convection-dominated diffusion type are for the electron and hole concentrations. Finite volume element procedure are put forward for the electrostatic potential, while upwind     

三维热传导型半导体器件问题在局部加密网格上的有限差分格式

局部网格加密技术能很好地解决局部性很强的问题,半导体器件问题的解在半导体的p-n结附近有很强的局部性质.热传导型半导体器件瞬态问题的数学模型由四个方程组成的非线性偏微分方程组的初边值问题决定,电场位势方程是椭圆型的,电子和空穴浓度方程是抛物型的,温度方程是热传导型的.依据实际数值模拟的需要,提出了一类三维热传导型半导体问题在时间上进行局部加密的复合网格上的有限差分格式,并给出了电子、空穴浓度和温度的最大模误差估计以及数值算例.这些研究结果对半导体器件数值模拟的算法理论、实际应用和工程软件系统的研制,均具有重要的价值.     

半导体设备热传输中的隐式-显式多步有限元法

考虑热引导半导体设备中的传输行为，用一个有限元法离散电子位势所满足的Rpoisson方程；用隐式－显式多步有限元法处理电子密度和空洞密度满足的两个对流－扩散方程，热传导方程用隐式多步有限元法离散，推导了优化的L^2范误差估计。     

半导体瞬态问题的混合迎风有限体积格式

半导体器件的瞬时状态由包含3个拟线性偏微分方程所组成的方程组的初边值问题来描述.在三角剖分的基础上,对椭圆型的电子位势方程采用混合有限体积元法来逼近,对对流扩散型的电子浓度和空穴浓度方程采用迎风有限体积元方法来逼近,并进行了详细的理论分析,得到了最优阶的误差估计结果.最后,针对混合有限体积元法和迎风有限体积元法分别单独使用以及两种方法结合使用的情形给出了不同的数值算例.     

IMPLICIT-EXPLICIT MULTISTEP FINITE ELEMENT-MIXED FINITE ELEMENT METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE

The transient behavior of a semiconductor device consists of a Poisson equa-tion for the electric potential and of two nonlinear parabolic equations for the electrondensity and hole density.The electric potential equation is discretized by a mixed finiteelement method. The electron and hole density equations are treated by implicit-explicitmultistep finite element methods. The schemes are very efficient. The optimal order errorestimates both in time and space are derived.     

An Approximation of Three-Dimensional Semiconductor Devices by Mixed Finite Element Method and Characteristics-Mixed Finite Element Method

The mathematical model for semiconductor devices in three space dimensions are numerically discretized. The system consists of three quasi-linear partial differential equations about three physical variables: the electrostatic potential, the electron concentration and the hole concentration. We use standard mixed finite element method to approximate the elliptic electrostatic potential equation. For the two convection-dominated concentration equations, a characteristics-mixed finite element method is presented. The scheme is locally conservative. The optimal $L^2$-norm error estimates are derived by the aid of a post-processing step. Finally, numerical experiments are presented to validate the theoretical analysis.     

Mixed finite volume methods for semiconductor device simulation

We deal with the two-dimensional numerical solution of the Van Roosbroeck system, widely employed in modern semiconductor device simulation. Using the well-known Gummel's decoupled algorithm leads to the iterative solution of a nonlinear Poisson equation for the electric potential and two linearized continuity equations for the electron and hole current densities. The numerical approximation is based on the dual mixed formulation for a self-adjoint second-order elliptic operator by using the Raviart-Thomas (RT) finite elements of lowest degree on a triangular partition of the device domain. In this article, we propose a suitable variant of the RT method, based on the diagonalization of the element mass matrix. This is achieved by use of an appropriate numerical integration that eliminates the fluxes and gives rise to a cell-centered finite volume scheme for the scalar unknown with the same approximation properties of the mixed approach, but at a reduced computational cost. The above procedure suggests also a natural way to introduce in the frame of the classical Box Method (BM) suitable vector basis functions (edge elements) to represent the current field over each mesh triangle. This issue may be profitably employed both as a postprocessing tool, as well as a technique for solving the current continuity equations when source terms depending on the current itself are included in the mathematical model. Simulations of realistic semiconductor devices are then included to demonstrate the accuracy and stability of the new method. © 1997 John Wiley & Sons, Inc.     

三维热传导型半导体问题的特征有限元方法和分析

本文研究三维热传导型半导体瞬态问题的特征有限元方法及其理论分析,其数学模型是一类非线性偏微分方程的初边值问题,对电子位势方程提出Ｇａｌｅｒｋｉｎ逼近;对电子,空穴浓度方程采用特征有限元逼近;对热传导方程采用对时间向后差分的Ｇａｌｅｒｋｉｎ逼近．应用微分方程先验估计理论和技巧得到了最优阶Ｌ＾２误差估计。     

热传导型半导体瞬态问题的迎风有限体积元方法

半导体瞬态问题的数学模型是由四个方程组成的非线性偏微分方程组的初边值问题所决定．其中电子浓度和空穴浓度方程往往是对流占优扩散问题,普通的方法已不适用,为此本文用迎风格式处理对流项部分,提出一种全离散迎风有限体积元方法,并进行收敛性分析,在最一般的情况下得到了一阶精度L2模误差估计结果．