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1.
采用固相反应法制备了系列(1-x)Bi0.5(Na0.82K0.18)0.5TiO3-xBiFeO3(BNKT-BFx)陶瓷.研究了该陶瓷在室温至500 ℃范围内的介电性能.结果表明:该陶瓷的介电温谱与典型弛豫铁电体的特征不同,存在两个介电反常峰和一个介电损耗峰,只在低温介电反常峰温度附近具有明显的介电常数的频率依赖性,居里温度随频率增加基本不变.首次提出了弛豫铁电体分为本征弛豫和非本征弛豫铁电体的理论.通过分析极化前和极化后陶瓷的介电温谱,发现该体系低温介电反常峰温度附近的介电频率依赖性为空间电荷和缺陷偶极子极化引起的非本征弛豫.  相似文献   

2.
采用传统固相反应法制备了不同SiO_2掺量的CaCu_3Ti_4O_(12)(CCTO) 陶瓷材料,并研究了SiO_2含量对CCTO陶瓷物相结构、微观形貌及介电性能的影响.结果表明:高温烧结时,SiO_2不会与CCTO发生固相反应,而作为第二相物质存在于CCTO陶瓷的晶界,并对CCTO陶瓷的微观结构产生不同程度的影响.CCTO陶瓷的介电常数和介电损耗随SiO_2含量的增多而相应减小.阻抗分析表明,CCTO陶瓷的晶粒电阻随SiO_2的掺入略有改变,而晶界电阻则随SiO_2的掺入而显著增大.分析认为,晶界电阻的增大是导致CCTO陶瓷介电损耗降低的主要原因.  相似文献   

3.
采用固相法制备BiFeO3-x[BSN-G](x=0~5.0wt;)陶瓷样品,研究添加不同量的BSN-G对BiFeO3陶瓷微观形貌,电性能及磁性能的影响.研究结果表明:BSN-G的加入使得陶瓷样品气孔率降低,致密度提高.随着x的增加,陶瓷的介电常数和介电损耗呈逐渐降低趋势,当x=5;时,样品在1 kHz频率下的介电损耗为0.003.此外,添加BSN-G使得BiFeO3陶瓷的漏导电流降低,x=5;的样品具有饱和的电滞回线,其饱和极化强度Ps为1.5 μC/cm2,漏导电流密度J为0.39×10-6 A/cm2.交流阻抗图谱分析表明随着x的增加,样品的电阻呈增大趋势.活化能Ea随x增加而依次降低,进一步说明其损耗呈逐渐降低趋势.随着x的增加,样品的磁性能得到一定改善.  相似文献   

4.
采用固相法制备Ba1-x(Na0.5Bi0.5)xZr01Ti0.O3(x=0,0.05,0.1,0.15,0.2)陶瓷,并研究Bi、Na共同掺杂对BaZr01Ti0.9O3陶瓷结构、相组成、介电和铁电性能的影响.研究表明,Bi、Na共掺杂可以降低BaZr01Ti0.9O3陶瓷的烧结温度,并且在现有的掺杂水平下,所得陶瓷均为单一钙钛矿结构.陶瓷的相对介电常数在x=0.05时,由未掺杂的800增至最大值1700左右.陶瓷的介电损耗随Bi、Na掺杂量的增加,呈增加趋势.铁电性研究表明,随Bi、Na掺杂量的增加,存在漏电流增大的趋势,使得铁电性恶化,当含量超过0.1后呈现非铁电性.由以上可知,掺杂少量的Bi、Na,可以在一定程度上提高BaZr0.1Ti0.9O3陶瓷的介电性.  相似文献   

5.
董丽  董桂霞  程晓清  张茜  陈旸 《人工晶体学报》2015,44(11):3060-3064
采用放电等离子烧结制备了AlN/Mo/TiB2微波衰减材料.研究了TiB2的含量对复合材料的相组成、致密度、电阻率及介电性能的影响.利用XRD、SEM、网络分析仪对样品的相组成、微观结构、介电性能进行测试分析.结果表明:随着TiB2的含量的增加,复合陶瓷的致密度先增大后减小,当加入15wt; TiB2时,致密度达到最大,为98.71;.加入TiB2有利于复合陶瓷介电常数和介电损耗的增加.从电导率测试结果可知,复合陶瓷的渗流阈值在TiB2含量为15wt;.  相似文献   

6.
李旺  罗哲  唐鹿  薛飞  郭鹏 《人工晶体学报》2017,46(9):1735-1739
采用固相反应法制备了La3+掺杂的CaCu3Ti4O12(CCTO)陶瓷,研究了La3+掺杂量对Ca1-xLaxCu3Ti4O12(x=0;,1;,3;,5;,7;)陶瓷物相结构、微观形貌和介电性能影响,对La3+掺杂影响CCTO陶瓷介电性能的机理进行了分析.结果表明:x为3;时,开始出现杂相;x高于5;时,陶瓷晶粒开始细化;La3+掺杂可以显著提高CaCu3Ti4O12陶瓷的介电常数,同时介电损耗在高频段也相应降低,从而有助于CCTO陶瓷的综合介电性能的提升.  相似文献   

7.
采用固相法制备了Nb2Sr2-xYxO7陶瓷.研究了掺Y对陶瓷的晶体结构、表面形貌、铁电、介电和压电性能的影响.研究结果表明:钇掺杂Sr2 Nb2 O7陶瓷,Y3+取代了A位Sr2+,形成Nb2 Sr2-xYxO7固溶体,并提高了铌酸锶陶瓷铁电、介电和压电性能.在x=0.05时,Nb2 Sr2-xYxO7陶瓷的铁电性能达到最大(剩余极化强度Pr=0.254μC/cm2);在x=0.1时,Nb2Sr2-xYxO7陶瓷的介电性能达到最大(相对介电常数εr=90,介电损耗tarδ≤0.01).  相似文献   

8.
通过传统的固相反应法制备了(1-x)CaTiO3-xLaAlO3陶瓷,系统地研究了LaAlO3含量的变化对陶瓷的晶体结构、微观结构和微波介电性能的影响.结果表明,LaAlO3含量的增加导致(1-x)CaTiO3-xLaAlO3陶瓷的晶格结构发生畸变,使得陶瓷的介电常数下降、Q·f值增加,并使其谐振频率温度系数向负值处发生偏移.LaAlO3的含量为x=0.33时,(1-x)CaTiO3-xLaAlO3陶瓷的烧结温度为1460℃,展示了良好的微波介电性能:εr=45.3、Q·f=36218 GHz、τf=-0.5 ppm/℃.  相似文献   

9.
采用微波水热法合成纯相的BiFeO3粉体,在不同气氛(N2和O2按不同比例混合)下烧结BiFeO3陶瓷。利用XRD、SEM、LCR等测试方法研究了不同的烧结气氛对BiFeO3陶瓷晶体结构、微观形貌及电性能的影响。研究结果表明:所制备的BiFeO3陶瓷均具有单一菱方相钙钛矿结构,BiFeO3陶瓷内部晶粒的显微形貌表现为紧密排列的圆形颗粒结构。样品的介电性能测试表明,介电性能随气氛中N2比例的增加而得到提高。当气氛中N2∶O2=9∶1时,介电常数和介电损耗值在5 kHz下分别为205和0.055,此时得到最优的介电性能。室温下的电滞回线测试结果表明在富氮气氛下烧结能提高样品的铁电极化值和击穿场强。  相似文献   

10.
通过对Fe3+-Bi3+-NO-3-H2O体系的热力学分析,确定了Bi3+、Fe3+共沉淀范围为p H=7~12。固定p H=11,采用共沉淀法制备了Bi Fe O3的前驱体,经过煅烧得到了单相Bi Fe O3粉体,并进行了粒度和晶体结构的研究。采用放电等离子烧结(spark plasma sintering,SPS)的方法制备出高密度单相Bi Fe O3陶瓷块材并测试了其介电性能和铁电性能。结果表明,陶瓷块材相对密度为96.7%;陶瓷块材在频率为30 MHz时,介电常数ε’为91.9,介电损耗tanδ为0.017;陶瓷块材在室温时具有铁电性。在电场强度为30 k V/cm时,饱和极化强度Ps’=0.40μC/cm2,剩余极化强度Pr’=0.17μC/cm2,矫顽场强度EC=16 k V/cm。放电等离子烧结(SPS)出的陶瓷块材比传统常压烧结制备的陶瓷块材更加致密,介电和铁电性能更加优良。  相似文献   

11.
Wollastonite glass-ceramics were prepared through pressureless sintering. The sinterability of the prepared samples of the glassy powder in the system (SiO2-CaO-Na2O-Fe2O3-WO3) was investigated in the temperature range 720-900 °C and soaking time of 180 min. The influence of the increase in the glass powder particle size on the sinterability and dielectric properties of the glass-ceramic samples was studied.The sintered specimens were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD) methods. XRD analysis revealed that wollastonite was the main crystalline phase in the sintered glass-ceramics. Dielectric properties such as dielectric constant and dielectric loss were measured via a network analyzer at 10 GHz.It was observed that the increase of the glassy powder particle size improved the sinterability and dielectric properties of the glass-ceramic specimens. Wollastonite glass-ceramics with 16 μm particle size had maximum constant and minimum loss (εr = 10.10 and tan δ = 0.005) compared with the other glass-ceramics.  相似文献   

12.
Nb2O5/Co2O3加入量对(Ba,Sr)TiO3基电容器陶瓷介电性能的影响   总被引:1,自引:0,他引:1  
研究了Nb2O5/Co2O3加入量[质量分数,Nb/Co(摩尔比)=0.8]不同对(Ba,Sr)TiO3(Barium strontiumtitanate,BST)铁电电容器陶瓷介电性能的影响,得到不同Nb2O5/Co2O3加入量与BST陶瓷性能的关系。借助扫描电镜(SEM)和X射线衍射仪(XRD)研究不同Nb2O5/Co2O3加入量对BST陶瓷显微结构和物相的影响,探讨了Nb2O5/Co2O3加入量对BST陶瓷性能影响机理。结果表明:当Nb2O5/Co2O3加入量为1.0%时,可得到满足Y5V特性、介电常数为3934、介质损耗为2.6%综合性能好的BST陶瓷。Nb2O5/Co2O3加入量对BST陶瓷性能的影响是通过细晶化、压抑展宽居里峰、改善介电常数温度特性、减少介电常数、形成杂相、形成“晶核-晶壳”结构等进行。  相似文献   

13.
Fully interpenetrating polymer networks (IPN) based on natural rubber (NR) and polyvinyl alcohol (PVA) were prepared by using Glutaraldehyde as the common crosslinking agent. Crosslinking reactions were confirmed by Fourier Transform Infra-red Spectroscopy. The electrical properties of full-IPN have been studied in the frequency range of 102–106 Hz. The dielectric constant, dielectric loss and ac conductivity were analyzed as a function of frequency, temperature and blend composition. It was found that the dielectric constant and dielectric loss increased with the addition of PVA into NR. Interpenetrated system showed a significant reduction in dielectric constant and dielectric loss and almost frequency independent. The dielectric constant and dielectric loss were increased with increase in temperature. The change in these parameters with temperature in the IPN system was found too low as compared to the pure blends. The ac conductivity study revealed that the IPN materials exhibited a considerable reduction in conductivity.  相似文献   

14.
采用固相合成法制备了Fe2O3掺杂(Ba0.7Ca0.3)TiO3-Ba(Zr0.2Ti0.8)O3(简称BCZT)无铅压电陶瓷。借助XRD、SEM、阻抗分析仪等对该陶瓷的相组成、显微结构以及压电和介电性能进行了研究。结果表明,Fe2O3掺杂降低了BCZT无铅压电陶瓷的烧结温度并使居里温度Tc从85℃提高到95℃;当Fe2O3掺杂为0.02wt%~0.1wt%时,陶瓷样品均为ABO3型钙钛矿结构;少量Fe2O3掺杂促进了陶瓷晶粒的生长,但随着Fe2O3掺杂量进一步增加,陶瓷晶粒随之细化;当Fe2O3掺杂量为0.04wt%时,陶瓷样品具有最优综合电性能,其压电常数d33、机电耦合系数kp、机械品质因数Qm、介电损耗tanδ和介电常数εr分别为400 pC/N,0.40,51,0.023和3482。  相似文献   

15.
洪玮  彭波  刘军  姜楠  骆英 《人工晶体学报》2017,46(2):278-284
首先制备了硅烷偶联剂改性后的石墨烯和钛酸锶钡粉体,然后采用溶液混合法制备了石墨烯/钛酸锶钡/聚偏氟乙烯薄膜,并且对复合薄膜的微观结构、介电性能和热稳定性进行测定和分析.结果表明:硅烷偶联剂成功接枝到石墨烯和钛酸锶钡粉体表面,石墨烯和钛酸锶钡粉体能够较好的分散在聚偏氟乙烯基体中,石墨烯的加入可以大幅度提高材料的介电性能.在石墨烯质量分数为4.06;时,复合薄膜的介电常数达到515,介电损耗为0.6.在质量分数4.14;时发生了渗流现象,介电常数达到1500,介电损耗也达到了5左右.石墨烯的加人大幅度提升了复合材料的介电性能,并且在常用温度范围内具有良好的温度稳定性.  相似文献   

16.
采用固相反应法制备了K_(0.44)Na_(0.52)Li_(0.04)Nb_(0.86)Ta_(0.10)Sb_(0.04)O_3+x mol ;K_4CuNb_8O_(23)(0≤x≤2)(简称LF4-KCN)无铅压电陶瓷,使用XRD、SEM、 Agilent 4294A精密阻抗分析仪等对该体系的相组成、显微结构、压电及介电等性能进行表征.XRD分析表明,随着KCN含量的增加,室温时样品由四方相向正交相转变,且当x≥1时,出现K_6Li_4Nb_(10)O_(30)杂相.SEM分析表明,掺入KCN后,样品晶粒尺寸减小,晶粒轮廓清晰.随着KCN含量的增加,在100 ℃附近的介电常数温度曲线上出现第二介电常数极大值,即正交→四方铁电相变温度T_(O-T),同时居里温度TC向低温方向移动.KCN掺杂量对LF4的电性能有很大影响,表现为"硬性"掺杂,其压电常数d_(33),平面机电耦合系数k_p,1kHz频率下的介电损耗tanδ和介电常数ε_r均随着 KCN含量的增加而降低,而机械品质因素Q_m整体提高,样品的密度也显著增大.  相似文献   

17.
Potassium Dihydrogen Phosphate (KDP) is an excellent inorganic nonlinear optical (NLO) material with different device applications. Most of amino acids possess NLO property; therefore, it is of interest to dope them in KDP crystals. In the present study, amino acid L‐alanine doped KDP crystals were grown by slow aqueous solvent evaporation technique. The doping of L‐alanine was confirmed by the paper chromatography, the CHN analysis and the FT‐IR spectroscopy. The powder XRD was carried out to assess the single phase nature of the samples. The effect of doping on thermal stability of the crystals was studied by TGA and the kinetic and thermodynamic parameters of dehydration were evaluated. As the amount of doping increased the thermal stability of crystals decreased. However, the second harmonic generation (SHG) efficiency and the UV‐Vis spectroscopy studies indicated that as the L‐alanine doping increased the SHG efficiency and optical transmission percentage increased. The dielectric behavior of the samples has been studied. The variation of dielectric constant, dielectric loss (tanδ), a.c.resistivity and a.c.conductivity with frequency of applied field in the range from 100 Hz to 100 kHz was studied. The dielectric constant and dielectric loss decreased with increase the value of frequency of applied field. The dielectric constant and the dielectric loss values of L‐alanine doped KDP crystals were lower than the pure KDP crystals. The results are discussed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

18.
A series of Li2O–Al2O3–ZrO2–SiO2 glasses doped with different concentrations of WO3 (0 to 5.0 mol.%) have been synthesized. Differential thermal analysis of the samples indicated increasing glass forming ability with the increasing concentration of WO3 in the glass matrix. A variety of spectroscopic (optical absorption, IR, Raman and ESR) and dielectric properties (over a range of frequency and temperature) of these glasses have been investigated. The optical absorption and ESR spectral studies have pointed out that a part of tungsten ions do exist in W5+ state in addition to W6+ state especially in the samples containing low concentration of WO3. The IR and Raman spectral studies have suggested that there is a decreasing degree of disorder in the glass network with increase in the concentration of WO3. The values of dielectric parameters viz., dielectric constant, loss and ac conductivity at any frequency and temperature are observed to decrease as the concentration of WO3 is increased. Such changes have been attributed to decrease of redox ratio or decreasing proportions of W5+ ions that act as modifiers in the glass network. The quantitative analysis of the results of ac conductivity and dielectric properties have indicated an increase in the insulating character of the glasses with the concentration of WO3; this is attributed to the presence of tungsten ions largely in W6+ ions that participate in the glass network forming with WO4 structural units.  相似文献   

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