Scanning tunneling microscopy/spectroscopy study of adsorption of C<Subscript>60</Subscript>F<Subscript>36</Subscript> molecules on the 7 × 7-Si(111) surface

Spatially resolved images of an individual C₆₀F₃₆ fluorofullerene molecules on Si(111)-7 × 7 surface have been obtained by means of scanning tunneling microscopy/spectroscopy (STM/STS). The presence of isomers with different symmetry (T, C ₃, C ₁) has been revealed in STM investigation of initial adsorption stage of C₆₀F₃₆ on silicon surface Si(111)-(7 × 7). The adsorbed fluorofullerene molecule can occupy any adsorption site of silicon surface (corner site, faulted half, unfaulted half) that indicates for strong molecule-substrate interaction. The HOMO-LUMO gap of the adsorbed C₆₀F₃₆ molecules have been estimated from current image tunneling spectroscopy (CITS) and z(V) with engaged feedback measurements. The value of HOMO-LUMO gap observed experimentally was 3 eV. The C₆₀F₃₆ molecules adsorption on Si(111)-(7 × 7) surface was stable and kept equilibrium configuration during several hours.     

Scanning tunneling microscopy of fluorinated fullerene molecules on silicon surfaces

Scanning tunneling microscopy (STM) under ultra-high vacuum conditions is used to study the initial stages of adsorption of C₆₀F₁₈ and C₆₀F₃₆ fluorofullerene molecules on Si(111)-7 x 7 and Si(100)-2 x 1 surfaces. Spatially resolved STM images of individual molecules and ab initio calculations show that the fluorofullerene molecules interact with an Si surface, with the F atoms oriented toward the surface. The large electric dipole moment of the molecules induces strong polarization on the surface, but the charge transfer is weak. The presence of C₆₀F₃₆ isomers with different symmetry—T, C ₃, and C ₁—is revealed in STM images for the first time.     

Low-dimensional nanostructures and fullerene films on semiconductor surface

The morphology and atomic structures of C₆₀ fullerene films on a Bi(0001)/Si(111)-7 × 7 surface and adsorption of fluorofullerene C₆₀F _x molecules on a Si(111)-7 × 7 surface have been studied by scanning tunneling microscopy/spectroscopy and low-energy electron microscopy under ultra high-vacuum conditions. It has been shown that initial nucleation of C₆₀ islands on the surface of an epitaxial Bi film occurs on double steps and domain boundaries, while tunnel spectra do not exhibit any significant charge transfer to the lowest unoccupied molecular orbital states. Fluorofullerene molecules allow local (at the nanoscale level) modification of Si surface through local etching.     

Chemical adsorption of C60 on diamond (100)(2×1) surfaces

Molecular-dynamics simulations (MDSs) and ab initiocalculations are used to investigate the adsorption behavior of C₆₀ molecules on a clean dimer-reconstructed (100)(2×1) diamond surface. C₆₀ molecules have some probability to be adsorbed on the diamond surface at low incident energy (6∼45 eV). Electron-density contours show strong chemical interaction between C₆₀ molecules and the substrate surface. The adsorption property depends strongly on the incident energy and the impacting point. An incident energy of 18 eV may be an appropriate energy to grow a sub-monolayer or monolayer C₆₀ film on a clean C(100)(2×1) surface at room temperature. Received: 5 July 2000 / Accepted: 17 October 2000 / Published online: 28 February 2001     

Formation of strontium atomic chains on the singular and stepped Si(111) surfaces

The surface structures 3 × 2, 5 × 2, 7 × 2, and 9 × 2 formed on the Si(111) plane during adsorption of submonolayer strontium have been investigated using scanning tunneling microscopy. The experimental data obtained are in agreement with the models of surface reconstructions proposed earlier for the structures induced by the adsorption of divalent metal atoms. An important constituent of these structures is provided by strontium atomic chains in the 〈1$ \bar 1 $ \bar 1 0〉 direction. Three types of domains of surface structures are formed on the Si(111) plane, which correspond to the rotational symmetry C ₃ of the surface under consideration. The reduction of the symmetry of the substrate to C ₁ with the use of the stepped Si(7 7 10) surface makes it possible to form strontium atomic chains, which are oriented with respect to the substrate in a similar manner.     

Self-assembly of C60 fullerenes on quasi-one-dimensional Si(111)4 × 1-In surface

Using scanning tunneling microscopy observations, self-assembly of C₆₀ fullerenes in the course of room-temperature adsorption onto Si(111)4 × 1-In reconstruction and after subsequent annealing at temperatures ranging from 150 to 450 °C has been studied. Adsorbed C₆₀ fullerenes have been found to occupy off-centered positions on In-atom rows forming linear chains with a maximal length of eight C₆₀ molecules. Intermolecular spacing within the regular chains equals three lattice constants of Si(111) surface. Two energetically different adsorption states of C₆₀ have been detected, one of which is occupied preferentially at room temperature, while occupation of the second (more tight) state dominates at temperature above ~ 150 °C. In the first state, C₆₀ fullerene resides plausibly in a continuous rotation, while in the second state a C₆₀ molecule is fixed tightly in a single orientation with a C₆₀ hexagon pointing upward. Transition of C₆₀ fullerenes to the more stable state is accompanied by expelling In atoms from the Si(111)4 × 1-In reconstruction.     

On the interaction of self-assembled C<Subscript>60</Subscript>F<Subscript>18</Subscript> polar molecules with the Ni(100) surface

The current work is dedicated to investigation of the interaction between self-assembled polar molecules of fullerene fluoride C₆₀F₁₈ with the chemically active surface Ni(100) under radiation and heat treatments. X-ray photoelectron spectroscopy is used in combination with quantum-chemical simulation. For the first time, the transformation of an as-deposited dielectric continuous 2D thin film to a 3D island-type assembly with molecular ordering within the islands is shown to take place. The degree of coverage of the Ni surface by C₆₀F₁₈ islands (0.6–0.7) and their height (~6 nm) are estimated. Quantum-chemical simulation shows that the chemisorption energy of the C₆₀F₁₈ molecule on the Ni surface equals ~6.6 eV and fluorine atoms are located at a distance of 1.9 Å above the Ni surface. The results of the investigation provide an opportunity to create nanoscale ordered structures with local changes in the work function.     

Electron-energy-loss spectroscopy of C60 monolayer films on active and inactive surfaces

The characteristics of interaction between C₆₀ molecules and Si(1 1 1)-7×7, Ag/Si(1 1 1)-√3×√3 R30° and layered material MoS₂ surfaces have been investigated using electron-energy-loss spectroscopy (EELS). The EEL spectrum of C₆₀/Si(1 1 1)-7×7 shows a new peak at loss energy of 2.7 eV. This indicates the existence of charge transfer from the substrate to C₆₀ molecules. The EEL spectrum of a C₆₀ monolayer film grown on a cleaved surface of MoS₂ is almost the same as that of bulk C₆₀. The EEL spectrum of a C₆₀ monolayer film on an Ag/Si(1 1 1) surface is quite different from that on a clean Si(1 1 1)-7×7 surface, although the films on those substrates have the same epitaxial arrangement. Furthermore, intensities of energy-loss peaks of C₆₀/Ag/Si(1 1 1) are slightly smaller than those of C₆₀/MoS₂ in spite of having the same loss-energy. This suggests that the interaction between C₆₀ molecules and the Ag/Si(1 1 1) surface is stronger than that between C₆₀ molecules and the MoS₂ surface.     

The adsorption of nitric oxide on a silicon (100) 2 × 1 surface studied with Auger electron spectroscopy

We present an Auger electron spectroscopy (AES) study of the adsorption of nitric oxide (NO) on a clean Si(100)2 × 1 surface at 300 and 550 K. Accurate measurement reeveal well resolved fine structure at Auger SiL_2.3VV transitions at 62 and 83 eV. These peaks can be attributed to SiO and SiN bonds. Furthermore, it is argued that the broadening in the SiLi_2.3VV Auger transition at 83 eV at 300 K may be composed of two nearby peaks, which could be attributed to two different kinds of chemical bonding, SiN and SiO. The absence of a peak at 69 eV at room temperature strongly suggests the NO adsorption on a Si(100)2 × 1 surface to be molecular. Dissociation of NO on the Si(100)2 × 1 surface is observed at 550 K.     

Interaction of C60 molecules with a (100) Mo surface

The adsorption, initial stages of film growth, and transformation of an adlayer of C₆₀ molecules on a (100) Mo surface upon heating are studied under ultrahigh-vacuum conditions. It is shown that the C₆₀ molecules remain intact in the adsorbed state up to 760 K. Layer-by-layer growth of a fullerite film is observed at room temperature, while tower-shaped crystallites grow up from a loosely packed monolayer with an approximate concentration of C₆₀ molecules equal to (1.3±0.2)×10¹⁴ molecules · cm⁻² at 500–600 K. In the latter case the percentage of the surface occupied by them depends on the temperature and the impinging flux density of fullerene molecules, but after a certain stationary value has been achieved, it scarcely depends on the exposure time. Zh. Tekh. Fiz. 69, 117–122 (November 1999)     

Vibrational dynamics of fullerene molecules adsorbed on metal surfaces studied with synchrotron infrared radiation

Infrared (IR) spectroscopy of chemisorbed C₆₀ on Ag (111), Au (110) and Cu (100) reveals that a non-IR-active mode becomes active upon adsorption, and that its frequency shifts proportionally with the charge transferred from the metal to the molecule by about 5 cm^-1 per electron. The temperature dependence of the frequency and the width of this IR feature have also been followed for C₆₀/Cu (100) and were found to agree well with a weak anharmonic coupling (dephasing) to a low-frequency mode, which we suggest to be the frustrated translational mode of the adsorbed molecules. Additionally, the adsorption is accompanied by a broadband reflectance change, which is interpreted as due to the scattering of conduction electrons of the metal surface by the adsorbate. The reflectance change allows determination of the friction coefficient of the C₆₀ molecules, which results in rather small values (∼2×10⁹ s^-1 for Ag and Au, and ∼1.6×10⁹ s^-1for Cu), consistent with a marked metallic character of the adsorbed molecules. Pre-dosing of alkali atoms onto the metal substrates drastically changes the IR spectra recorded during subsequent C₆₀ deposition: anti-absorption bands, as well as an increase of the broadband reflectance, occur and are interpreted as due to strong electron–phonon coupling with induced surface states. Received: 6 June 2001 / Accepted: 23 October 2001 / Published online: 3 April 2002     

Formation of highly crystalline C<Subscript>60</Subscript> molecular films on a Bi(0001)/Si(111) surface

The results of scanning tunneling microscopy (STM) investigation of controllable growth of C₆₀ adsorption on a Bi(0001)/Si(111) surface are reported. With the use of UHV STM, it has been shown that the most favorable sites for the initial stage of C₆₀ adsorption are the double steps and domain boundaries. At ∼1 monolayer C₆₀ coverage, the modulation pattern caused by the epitaxial relation between C₆₀ and Bi unit cells has been observed. An increase in the C₆₀ coverage up to several monolayers results in the formation of a highly crystalline molecular film. The text was submitted by the authors in English.     

On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

Highly perfect epitaxial heterostructure CoSi₂ films have been grown on the surface of Si (111) and Si (100) single crystals by the method of molecular-beam epitaxy. The optimal regimes of the film growth with different thicknesses have been determined. It has been shown that short-term annealing of epitaxial films at T = 900–950 K leads to the formation of new CoSi₂/Si(111)-2 × 2 and CoSi₂/Si(100)−2 × 4 superstructures.     

Electronic structure and local interactions on a S(100) 2×1 surface with submonolayer Ba overlayers

The electronic structure and ionization energy for the system Ba/Si(100)2×1 have been studied as functions of the submonolayer coverage. It is found that there is an energy gap in the surface states spectrum and that the Ba/Si(100)2×1 interface is semiconducting up to 1.5 monolayers of Ba. Two surface bands induced by Ba adsorption have been detected. The evolution of the spectrum with increasing degree of Ba coverage points to the existence of two nonequivalent “adsorption sites,” which differ in binding energy by 0.11 eV. The development of the Ba-induced bands is found to terminate at a coverage corresponding to the minimum ionization energy and close to one monolayer. The adsorption bond is shown to have a primarily covalent character. Zh. éksp. Teor. Fiz. 114, 2145–2152 (December 1998)     

Selective adsorption of coronene on Si(1 1 1)-(7 × 7)

The adsorption of coronene (C₂₄H₁₂) on the Si(1 1 1)-(7 × 7) surface is studied using scanning tunneling microscopy (STM). Upon room temperature submonolayer deposition, we find that the coronene molecules preferentially adsorb on the unfaulted half of the 7 × 7 unit cell. Molecules adsorbed on different sites can be induced to move to the preferential sites by the action of the tip in repeated image scans. Imaging of the molecules is strongly bias dependent, and also critically depends on the adsorption site. We analyze the results in terms of differential bonding strength for the different adsorption sites and we identify those substrate atoms which participate in the bonding with the molecule.     

Templating a face-centered cubic (110) termination of C60

Scanning tunneling microscopy has been used to study C₆₀ overlayers on TiO₂(100)-(1 × 3). Initial adsorption preferentially occurs on O vacancies (Ti³⁺), evidencing a site-specific interaction dominated by substrate-adsorbate charge transfer. At saturation coverage the molecules are incommensurate with Ti³⁺ sites along [001], suggesting a delicate balance between intermolecular and substrate interactions. The unit cell of the C₆₀ overlayer is 13.8Å× 10.0 ± 0.5Å, consistent with the first layer of fcc C₆₀(110); molecules also adopt sites in the troughs of the (1 × 3) structure to form the second layer.     

Fluorine etching on the Si(111)-7×7 surfaces using fluorinated fullerene

Fluorine etching on the Si(1 1 1)-7×7 surfaces using fluorinated fullerene molecules as a fluorine source has been investigated. At room temperature, adsorbed fluorinated fullerene molecules reacted with the Si(1 1 1)-7×7 surface to create a localized distribution of fluorine on the surface. Nanoscale etch pits were created by annealing at 300 °C, due to the adsorption of the fluorine localized around the C₆₀F_x molecules. Annealing at 400 °C resulted in the delocalized fluorine distribution on the surface and healing of the etch pits, due to the enhancement of the diffusion of both the fluorine and silicon atoms. Subsequent annealing at 500 °C led to desorption of SiF₂ reactants formed on the surface. The fluorine diffusion process was found to be an elemental process in the etching because the diffusion of adsorbed fluorines is a key for the formation of the SiF₂ species and their subsequent desorption.     

Characteristics of thermally stimulated depolarization phenomena in zinc-oxide ceramics for varistors

The results of experimental investigations and an analysis of the temperature dependences of the thermally stimulated depolarization current are presented for zinc-oxide ceramics suitable for use in high-voltage varistors. A model for the depolarization phenomena is proposed that takes into account charge exchange on localized electronic states on both sides of the intercrystallite potential barrier. The model is used to obtain estimates of the ionization energy and density of shallow (∼0.07 eV, 1×10¹⁷ cm⁻³) and deeper (∼0.2 eV, 1×10¹⁸ cm⁻³) bulk levels and surface-localized levels (∼0.1 eV, 1×10¹³ cm⁻²). Zh. Tekh. Fiz. 67, 60–63 (October 1997)     

Study of Ag/Si(111) submonolayer interface: I. Electronic structure by angle-resolved UPS

Angle-resolved ultraviolet photoelectron spectra have been measured for well defined Ag/Si(111) submonolayer interfaces of (1) $\text{Si(111)(}\text{3}\text{×}\text{3}\text{)R30°-Ag}$, (2) “Si(111)(6 × 1)-Ag”, and (3) Ag/Si(111) as deposited at room temperature. Non-dispersive and very narrow (FWHM ～ 0.4–0.5 eV) Ag 4d derived peaks are found at 5.6 and 6.5 eV below the Fermi level for surface (1) and at 5.3 and 6.0 eV for surface (2). Dispersions of sp “binding” states in the energy range between E_F and Ag 4d states have been precisely determined for surface (1). Electronic structures similar to those of the Ag(111) surface, including the surface state near E_F, have been observed for surface (3).     

New evaluation of fullerene molecules on Si(111)-(7 × 7) reconstructed structure using non-contact scanning non-linear dielectric microscopy

Fullerene (C₆₀) molecules on an Si(111)-(7 × 7) surface have been investigated using non-contact scanning non-linear dielectric microscopy (NC-SNDM) under an ultra-high vacuum. The topography, the interface between the C₆₀ molecule and Si adatoms, and the internal structure of the C₆₀ molecules were successfully investigated. For ～ 0 ML and ～ 0.4 ML coverage, both phase reversal sites and sites without phase reversal could be observed in the first order phase (θ1) image. On the other hand, for 1 ML coverage, phase reversal could not be identified. These results indicate that charge transfer only occurred from Si adatoms to C₆₀ molecules at three-fold symmetric sites on the Si(111)-(7 × 7) surface, and the electric dipole moment is reflected in the electronic state of the C₆₀ molecules. The internal structure of C₆₀ molecules was clearly observed in topography by the second order amplitude (A₂) feedback signal for 1 ML coverage, reflecting the LDOS originating from the t_1u orbital.