The metal-semiconductor transition in amorphous Si1−x Cr x films:T 0.19-contribution to the metallic conductivity

A detailed phenomenological re-analysis of previously published conductivity data, (T, x), is presented. It is based on the investigation of differences, (T, x ₁)–(T, x ₂). In this way, the cusp-like low-temperature term is amplified against the other temperature dependent contributions. This term can be described by wherep=0.19±0.03. It is present, if (4.2 K,x) exceeds 260 ^–1 cm^–1, at least up to (4.2 K,x)1350 ^–1 cm^–1 and forT60 K. But it is absent, if (4.2 K,x)180 ^–1 cm^–1. The disappearance of this contribution should be related to the metal-semiconductor transition, taking place atx _c 0.14. On the other hand, the presence of a term proportional toT ^1/2, as predicted by Altshuler and Aronov, seems unlikely.It is argued that the term should be related to the interplay of electron-electron interaction and disorder. The comparison with data from the literature shows that this contribution might also be present in heavily doped crystalline semiconductors.     

Femtosecond-pulse laser ablation of human corneas

A femtosecond pulse laser in the visible spectral region shows promise as a potentially new powerful corneal sculpting tool. It combines the clinical and technical advantages of visible wavelengths with the high ablation quality observed with nanosecond-pulse excimer lasers at 193 nm. A femtosecond and a nanosecond dye laser with pulse durations of 300 fs and 7 ns, and centre wavelengths at 615 nm and 600 nm, respectively, both focused to an area of the order of 10^–5 cm², have been applied to human corneal ablation. Nanosecond laser pulses caused substantial tissue disruption within a 30–100 m range from the excision edge at all fluences above the ablation threshold of F _th60 J cm^–2 (I _th9 GW cm^–2). Completely different excisions are produced by the femtosecond-pulse laser: high quality ablations of the Bowman membrane and the stroma tissue characterised by damage zones of less than 0.5 m were observed at all fluences above ablation threshold of F _th1 J cm^–2 or I _th3 TW cm^–2 (3×10¹² W cm^–2). The transparent cornea material can be forced to absorb ultrashort pulses of extremely high intensity. The fs laser generates its own absorption by a multiphoton absorption process.     

Nearest neighbor effect on capture cross sections measured in IR phototransients on Si:In

The extrinsic photoconductive decay at T=20–100 K is analyzed in FZ-grown Si: In material after pulsed irradiation by a PbSSe infrared laser (=4 m). Trapping time constants (=10 ns-100 s) are resolved for the prevalent In acceptor (N _In=10¹⁶–10¹⁷ cm^–3) and for additional shallow acceptors B, Al, and the X(In)-center present at low concentrations (N=10¹²–10¹⁴ cm^–3). Hole capture cross sections determined for the acceptor levels show a large scatter over up to 4 orders of magnitude. It is shown that the capture cross section is dependent on all the dopant concentrations present in the sample due to nearest neighbor interaction. Due to the formation of donor-acceptor dipoles, the capture cross section assumes low values. A model calculation of the interaction based on only fundamental parameters of Si is in accordance with the experimental data within the experimental error. The hole capture cross sections for isolated acceptors are _p=1×10^–12, 1×10^–14, 1×10^–13, 2.5×10^–13 cm² for indium, X-center, aluminum, and boron at the temperatures T=95 K, 100 K, 70 K, 45 K, respectively.     

Photoluminescence and gain spectroscopy of highly excited epitaxial GaN-layers

The spectra of photoluminescence and optical gain of GaN have been measured at low temperatures under N₂-laser excitation.At low excitation levels (I _exc10⁴W cm^–2) we observe free and bound exciton recombination. At intermediate excitation (I _exc10⁵W cm^–2), inelastic exciton-exciton scattering processes show up. At the highest excitation levels (I _exc10⁶ W cm^–2) we report here for the first time the emission from an electron-hole plasma.     

Ordered-disordered ternary alloys by atomic layer epitaxy

Ga₀₅In₀₅P ternary alloys, lattice-matched to GaAs substrates, were grown by atomic layer epitaxy. The growth proceeded by the deposition of monolayers of In-P-Ga-P in a self-regulated fashion. The ternary alloys were found to have different crystal and bandgap structures depending on the growth conditions. Films deposited on (1 0 0) oriented GaAs substrates have a random (disordered) structure withE _g 1.9 eV. However, the same ternary alloy deposited on misoriented substrates showed a high degree of ordering withE _g 1.76 eV. The ordered structure is in the form of highly strained monolayer superlattices (InP-GaP) oriented along the (1 1 1) direction. The ordered-disordered transition can also be achieved by Se doping to the 10¹⁷ cm^–3 range. We report on the atomic layer epitaxy growth conditions for both ordered and disordered GaInP films. We also discuss several possible quantum well structures based on this ternary alloy.     

Influence of the overall pressure on electrical conductivity of the amorphous semiconductor Ge15Te81S2As2

The experimental results obtained with the chalcogenide glass Ge₁₅Te₈₁S₂As₂ with imposed overall pressure up to 700 MPa are presented. The material exhibits the switching effect and the memory effect. It is shown that the overall pressure changes remarkably d.c. electrical conductivity of the amorphous semiconductor. It is assumed that the changes in conductivity are caused by changes in activation energy. The changes in activation energy within the range of considered pressures are, as follows from our measurements, E/p–10·95×10^–5 eV/MPa +p × 10·41 W 10^–7 eV/MPa². The assumption of the activation energy dependence on pressurep are confirmed also by measurements of dependence In vs. 1/T at various pressures.     

Specific heat of Eu x Sr1−x Te

In this paper, we report on measurements of the specific heatC of single-crystalline Eu _x Sr_1–x Te at temperatures between 60 mK and 15 K and in magnetic fields up to 6 T. Pure antiferromagnetic EuTe shows unusual critical behavior in the vicinity of the Néel temperatureT _N=9.8 K with a positive critical exponent instead of the 3d-Heisenberg exponent =–0.12. Possible reasons for this discrepancy between theory and experiment include magnetic anisotropy effects due to magnetic dipole-dipole interactions, which may give rise to a cross-over of the critical behavior very close toT _N. This anisotropy is also seen in the specific heat below 1 K where an exponential decay ofC is observed, and in the dependence of the magnetic susceptibility on the direction of the applied field. With increasing dilution of EuTe with nonmagnetic Sr, the critical behavior changes: becomes negative and decreases continuously towards –1 atxx _c. This concentration dependence of was previously observed in the diluted ferromagnetic system Eu _x Sr_1–x S. Our data thus support that the apparent change in the critical behavior depends on the degree of disorder. Samples with concentrationx lower than the critical concentrationx _c reveal spin-glass behavior in the specific heat. In addition, the dependence ofT _N on magnetic fields is discussed. The data yield a normalized magnetic phase boundaryB _c(T)/B_c(T=0) vs.T _N(B)/T_N(B=0) which is independent of concentration.     

A new structure of In-based ohmic contacts ton-type GaAs

Electrical, structural and reaction characteristics of In-based ohmic contacts ton-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated bye-beam sputtering Ni, NiIn and Ge targets on VPE-grownn ⁺-GaAs film (1 m, 2 × 10¹⁸ cm^–3) in ultrahigh vacuum as the structure of Ni(200 Å)/ NiIn(100 Å)/Ge(40 Å)/n ⁺-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500–900°C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni₃ln. The lowest specific contact resistivity ( _c) of (1.5 ± 0.5) × 10^–6 cm² measured by the Transmission Line Method (TLM) was obtained after annealing at 700°C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, In _x Ga_{1– x}As phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.This work was supported by the National Natural Sciences Foundation of China (NSFC)     

ESR and conductivity studies of doped polyacetylene

Low temperature ESR spectra of cis-rich and trans-rich polyacetylene, lightly doped with pentafluorides (AsF₅, SbF₅) exhibit two clearly distinguishable ESR lines. Detailed studies of these two lines as a function of temperature, doping concentration and microwave power indicate that one of these lines originates from localized spins, the other from conduction electrons. The concentration of the localized spins, generally speaking, decreases with doping. The Pauli-like susceptibility associated with the conduction electrons changes from 1.5×10^–7 to 15×10^–7 emu·cm³/mole for various doping levels and correlates with the conductivity of the same samples. The longitudinal relaxation time of the localized spins in doped trans-rich was found to beT ₁100 s at low temperatures, consistent with values of others in undoped trans rich. The temperature dependence of the homogeneous transverse relaxationT ₂ of the localized spins in doped trans-rich polyacetylene is similar to that of undoped trans polyacetylene. These facts show that the localized spins originate from undoped regions of the doped polyacetylene, perhaps due to inhomogenous doping. Our results are consistent with either formation of metallic islands, or, probably more, with impurity band conduction in strongly disordered semiconductors.     

Cation diffusion in InP/In0.53Ga0.47As superlattices: strain build-up and relaxation

InP and In_0.53Ga_0.47As are lattice matched and can form superlattices that are free of crystalline defects. Zn indiffusion enhances the diffusion of cations while leaving the anions unaffected; the resultant In_1–x Ga _x P/In_1–x Ga _x As superlattices are strained. Since the as-grown specimens are pseudomorphic, any defects observed after Zn diffusion must be attributed to strain relaxation. Studies of the post-growth strain build-up and relaxation in this novel system suggest a new strain relief mechanism for buried strained layers of face-centred-cubic (fcc) structures. The signature defect of the proposed mechanism is a microtwin along a {111} plane spanning the buried strained layer and terminating at both interfaces with partial dislocations of 1/6112 type. Energy analysis indicates that this new partial-dislocation strain relief mechanism is more effective than the conventional 60 perfect-dislocation mechanism for relieving the in-plane strain in buried strained layers. Therefore, the proposed mechanism is an energetically favourable relaxation channel and limits the useful thicknesses of strained layers in electronic and optoelectronic devices.     

μSR studies in heavily doped GaAs

Transverse-field (TF) and longitudinal-field (LF) ⁺ SR measurements have been made on conducting GaAsSi (n-type 10¹⁸ cm^–3) and GaAsZn (p-type 10¹⁹ cm^–3) from 20 mK to 200 K. At low temperatures in GaAsSi, the frequency spectra show a large diamagnetic signal as well as broad lines due to bond-centered muonium (Mu _BC ). This broadening is attributed to spin exchange interactions with charge carriers in impurity bands. Only the diamagnetic signal is observed in GaAsZn. The field dependence of the TF diamagnetic relaxation rate at 5 K can be explained by the combined electric quadrupolar and Zeeman interaction between the muon and the surrounding nuclei and the temperature scan at TF=1.5 T indicates that the mechanisms responsible for the broadening are temperature independent. The candidates for the diamagnetic species are discussed in view of these results.This work is partially supported by the Natural Sciences and Engineering Research Council of Canada, the Welch Foundation (C-1048 [TLE], D-1053 [RLL]) and the U.S. National Science Foundation (DMR-8917639 [TLE, BH]).     

An interaction of nucleons at an energy between 1014 and 1015 eV/nucleon

A jet (0+14) with primary energy {3.3 _{– 2.2} ^{+ 5.3} }. 10¹⁴ eV/nucl. was observed in the I-stack. An interaction with very small multiplicity (n _s =3or 4)found in the axis of the jet is probably caused by another nucleon from the -primary. 10 particles of the narrow cone have opening angles of some 10^–4 radians, 4 particles in the diffuse cone are emitted at angles of a few 10^–2 radians. A pronounced anisotropy exists in the C. M. system. The coefficient of inelasticity 0.1was calculated directly extrapolating the measured energies of secondaries. The interpretation of the whole event is in good agreement with Heisenberg's theory of multiple production of particles.     

Electrical properties and defect model of tin-doped indium oxide layers

Tin-doped In₂O₃ layers were prepared by the spray technique with doping concentrationsc _Sn between 1 and 20 at. % and annealed at 500 °C in gas atmospheres of varying oxygen partial pressures. The room-temperature electrical properties were measured. Maximum carrier concentrationsN=1.5×10²¹cm^–3 and minimum resistivities =1.3×10^–4 cm are obtained if the layers are doped withc _Sn9 at. % and annealed in an atmosphere of oxygen partial pressurep _O2 10^–20 bar. At fixed doping concentration, the carrier mobility increases with decreasing oxygen pressure. The maximum obtainable mobility can be described in terms of electron scattering by ionized impurities. From an analysis of the carrier concentration and additional precision measurements of the lattice constants and film thicknesses, a defect model for In₂O₃:Sn is developed. This comprises two kinds of interstitial oxygen, one of which is loosely bound to tin, the other forming a strongly bound Sn₂O₄ complex. At low doping concentrationc _Sn4 at. % the carrier concentration is governed by the loosely bound tin-oxygen defects which decompose if the oxygen partial pressure is low. The carrier concentration follows from a relationN=K ₁ ·p _O2 ^–1/8 ·(3 ×10¹⁰ × c_Sn –N)^1/4 with an equilibrium constantK ₁=1.4×10¹⁵ cm^–9/4bar^1/8, determined from our measurements.     

Optical and electron spin resonance spectra ofZ 2(Eu) centers in alkali halide crystals

The ESR spectra ofZ ₂(Eu)-centers in KBr and KCl are presented and correlated to the optical absorption and the electron spin resonance of the Europium vacancy complex. The fine structure of theZ ₂ spectra can be described by a Spin-Hamiltonian with an axialb ₂ ⁰ -parameter only. At room temperature it amounts to 1,761 10^–4 cm^–1 for KBr, 1,854 10^–4 cm^–1 for KCl and 1,453 10^–4 cm^–1 for RbCl. Accordingly theZ ₂(Eu)-center must posses a strict axial 100-symmetry in these crystals.     

Phase diagram and LPE growth of strongly Sn- and Te-doped InGaAs

Sn and Te are used as n-type dopants in LPE In_0.53Ga_0.47 As contact layers, and carrier concentrations up to 2.2·10¹⁹ cm^–3 are obtained for both dopants. The distribution coefficients are k_Sn=(1.55±0.10)·10^–3 and k_Te0.11, respectively. With Sn a better control of the doping level is achieved than with Te, but the large amount of Sn necessary strongly affects the phase diagram. In order to facilitate the growth of InGaAs:Sn, the phase equilibria in the system In-Ga-As-Sn near 600° C are established. The liquid interaction parameters (Ga-Sn) and (As-Sn) are determined as 700 and -2050 cal/mole, respectively.     

Electrical and optical properties and stabilization of the Fermi level in GaP crystals irradiated by electrons and H+ ions

Electrical and optical properties and Fermi level stabilization are studied in GaP crystals irradiated by electrons (E2.2 MeV, D1·10¹⁹ cm^–2) and H⁺ ions (E5 MeV, D1.7·10¹⁶ cm^–2). It is shown that the limiting position of the Fermi level (F_limE_G/2±0.2 eV) is independent of the initial GaP parameters and the type of bombarding particle, but is determined by the condition of local neutrality of the defective GaP. Resistivity values for the irradiated specimens of _max(D)1·10¹³ ·cm were obtained at 300 K. At maximum integral particle fluxes a decrease in crystal resistivity to (3–6)·10⁹ ·cm was observed. The readjustment of GaP absorption spectra in the region hvE_G upon irradiation is related to recharging of gap states by radiation defects upon motion of the Fermi level toward F_lim.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 37–42, December, 1994.     

Electron states of manganese luminescence centres in A1N

The energy spectrum of manganese luminescence centres in AlN was studied by means of excitation and emission spectra. Two regions of excitation were found: in the first region (from 40 000 to 31 000 cm^–1) excitation occurs as a result of transfer of energy from other impurity centres to the manganese centres; in the second region (from 26 000 to 17 000 cm^–1) the manganese centres are excited directly. In the excitation band with a peak at about 19 200 cm^–1 a phonon structure was observed having a temperature dependence analogous to that of the phonon structure of the emission band. The phonon energy at excitation differs from that at emission (_exc260 cm^–1, _em160 cm^–1). A scheme of electron-phonon levels of manganese centres in AlN is presented, and problems relating to the structure of these centres are discussed.Na Slovance 2, Praha 8, Czechoslovakia.The authors would like to thank Dr. L. Kratina and Dr. F. Kubec (Institute of Radio Engineering and Electronics, Czechoslovak Academy of Sciences), who kindly performed the EPR measurements, and to Professor M. Trlifaj and Dr. J. Pastrák for valuable discussions.     

Spectral diagnostics of a unipolar high-frequency discharge excited in nitrogen and argon at pressures from 1 to 12 atm

By methods of spectral diagnostics, the temperature of neutral gas and the electron temperature and density have been determined in the channel of a unipolar high-frequency discharge excited at very high pressures. In nitrogen the h.f. discharge was excited at pressures of 1–5 atm, in argon at pressures of 1–12 atm. In the discharge excited in argon, the electron temperature does not change with increasing pressure and isT _e =(6–7)×10³ °K; the electron density increases with increasing pressure. It can be demonstrated that the electron velocity distribution is given by a Maxwellian distribution function although the plasma of a unipolar high-frequency discharge is non-isothermal (T _e –T _n 5×10³ °K).In conclusion, the author thanks Prof. Dr. V. Truneek for stimulating remarks and his kind interest in this work.     

Photoconductivity of highly excited A IV B VI thin films

We report the results of picosecond photoconductivity measurements in photosensitive electrolytically deposited PbS and vacuum evaporated PbTe polycrystalline films. We determine Auger recombination to be the prevailing carrier recombination mechanism in highly excited PbTe and PbS films and found Auger coefficients _A5×10^–28 cm⁶ s^–1 for PbTe and _A5.3×10^–29 cm⁶ s^–1 for PbS for carrier concentration changes N>10¹⁸ cm^–3. The results indicate that the low mobility values are controlled by intergrain carrier scattering. We have studied the thermal annealing influence on picosecond photoconductivity of the films.