Implantation doping of germanium with Sb,As, and P

The ions of Sb, As, and P have been implanted into germanium at energies ranging from 200 keV to 700 keV. Annealing was performed at 400°C, 550°C, and 650°C. The doping profile was determined by differentialCV-measurements. Strong outdiffusion (80%) and diffusion into the bulk material was observed after annealing. The remaining doping concentration and the diffusion constants were determined by a computer fit at 650°C. We foundD _Sb=1.8×10⁻¹³ cm²/s,D _As=9×10⁻¹⁴ cm²/s andD _P=4×10⁻¹⁴ cm²/s. Lower values of the diffusion constant were determined when the samples were covered with a SiO₂ layer.     

Diffusion study of nitrogen implanted into <Emphasis Type="Italic">α</Emphasis>-Hf using the nuclear resonance technique

The diffusion of nitrogen in α-Hf was studied in the temperature range of (823–1123) K using the ion implantation and nuclear resonance techniques. The measurements show that the diffusion coefficients follow the Arrhenius behavior D(T)=D ₀exp (−Q/RT) with D ₀=(5.5±2.1)×10⁻⁷ m²/s and Q=(228±1) kJ/mol. A comparison of the present results with the previous one is done.     

Thermo-optic coefficients of monoclinic KLu(WO<Subscript>4</Subscript>)<Subscript>2</Subscript>

The three thermo-optic coefficients of the biaxial laser host KLu(WO₄)₂ are measured at 633 nm by a deflection method. Their values at 300 K amount to ∂ n _g /∂ T=−7.4×10⁻⁶ K⁻¹; ∂ n _m /∂ T=−1.6×10⁻⁶ K⁻¹ and ∂ n _p /∂ T=−10.8×10⁻⁶ K⁻¹. Nearly athermal propagation directions are found for polarizations along the N _m and N _p dielectric axes.     

Diffusion Coefficients of Several Rhodamine Derivatives as Determined by Pulsed Field Gradient–Nuclear Magnetic Resonance and Fluorescence Correlation Spectroscopy

Rhodamine derivatives are popular, photostable fluorophores that are used in a number of fluorescent based techniques, including fluorescence correlation spectroscopy (FCS). Indeed, in FCS, both rhodamine 6G (R6G) and rhodamine 110 (R110) are used as calibration standards to determine the dimensions of the instrument confocal volume. In spite of a requirement for precise values of the diffusion coefficients, literature values are scarce and vary over an order of magnitude. In this paper, the diffusion coefficients of four rhodamine fluorophores (rhodamine 6G (R6G), rhodamine B (RB), rhodamine 123 (R123), rhodamine 110 (R110)) were determined by pulsed field gradient nuclear magnetic resonance (PFG-NMR) spectrometry and then validated by comparison with fluorescence correlation spectroscopy. With the objective of validating the FCS calibration, diffusion coefficients of several dextrans and a polystyrene nanoparticle were also determined and compared with literature values or theoretical values that were based upon the Stoke–Einstein equation. The work presented here lead us to conclude that the diffusion coefficients for R6G and R110 have generally been underestimated in the literature. We propose revised values of 4.4 × 10⁻¹⁰ m² s⁻¹ for R110 and 4.0 × 10⁻¹⁰ m² s⁻¹ for R6G. Using the revised D value for R110 to calibrate the FCS instrument, diffusion coefficients have then been systematically determined for different conditions of pH, ionic strength and concentration. To correct for differences due to solvent effects (D₂O vs. H₂O), an isotopic correction factor, of 1.23, was determined from both FCS and from the solvent auto-diffusion coefficients obtained by NMR.     

Hydrogen diffusion constants in stainless steel and Pd60Ag40 alloy, and permeability of diaphragms made of these metals

Hydrogen permeability through diaphragms made of 12X18H12T stainless steel and Pd₆₀Ag₄₀ alloy under electrolytic hydrogen saturation has been studied with an electrolytic cell with a vacuum chamber. Hydrogen diffusion constants D _H = 3.86 × 10⁻¹⁰ cm² s⁻¹ for stainless steel and D _H = 4.36 × 10⁻⁸ cm² s⁻¹ for Pd₆₀Ag₄₀ alloy have been determined at a temperature of 40°C using the Berrer relations.     

Pentacene thin film transistors using La2O3 as gate insulator

A study of Pentacene OTFTs using La₂O₃ as gate insulator is presented. The device characteristics were studied and analyzed. The OTFTs exhibit p-type conductivity with field effect mobility 6.5 × 10⁻⁸ m²/V.s, ON/OFF ratio 1.4 × 10², sub-threshold swing 2 mV/decade and hole concentration 4.5 × 10¹⁷ cm⁻³. The SEM and XRD analysis on the semiconductor film are also reported.     

Kinetics of the formation of gas bubbles during polarization of copper and graphite electrodes in electrolytic aqueous solutions

The adsorption and kinetic processes of the formation of gas bubbles passivating the surface during polarization of copper and graphite electrodes in 1% aqueous solution of sulfuric acid have been investigated. Three stages of the process related to the recharging of the double electric layer—adsorption accumulation of the gas escaping from the surface, the critical nucleation of the gas bubbles, and their subsequent growth—have been revealed, distinguished, and quantitatively estimated. It has been shown that potential leveling at the steady-state value specified by the Tafel equation is unambiguously associated with achievement of the limiting surface area screened by the gas bubbles for each particular current density. The surface diffusion constants D _H = (1.5–4.4) × 10⁻⁴ and (0.1–3.8) × 10⁻⁵ cm²/s of hydrogen on copper and graphite, respectively, and D _O = (1.8–4.5) × 10⁻⁷ cm²/s of oxygen on graphite during the motion toward the drain (the gas bubbles) have been calculated.     

Absolute cross sections of electron attachment to molecular clusters. Part II: Formation of (H2O) N? , (N2O) N? , and (N2) N?

Absolute cross sections σ⁻(E, N) of electron attachment to clusters (H₂O) _N , (N₂O) _N , and (N₂) _N for varying electron energy E and cluster size N are measured by using crossed electron and cluster beams in a vacuum. Continua of σ⁻(E) are found that correlate well with the functions of electron impact excitation of molecules’ internal degrees of freedom. The electron is attached through its solvation in a cluster. In the formation of (H₂O) _N ⁻ , (N₂O) _N ⁻ , and (N₂) _N ⁻ , the curves σ⁻(N) have a well-defined threshold because of a rise in the electron thermalization and solvation probability with N. For (H₂O)₉₀₀, (N₂O)₃₅₀, and (N₂)₂₆₀ clusters at E = 0.2 eV, the energy losses by the slow electron in the cluster are estimated as 3.0 × 10⁷, 2.7 × 10⁷, and 6.0 × 10⁵ eV/m, respectively. It is found that the growth of σ⁻ with N is the fastest for (H₂O) _N and (N₂) _N clusters at E → 0 as a result of polarization capture of the s-electron. Specifically, at E = 0.1 eV and N = 260, σ⁻ = 3.0 × 10⁻¹³ cm² for H₂O clusters, 8.0 × 10⁻¹⁴ cm² for N₂O clusters, and 1.4 × 10⁻¹⁵ cm² for N₂ clusters; at E = 11 eV, σ⁻ = 9.0 × 10⁻¹⁶ cm² for (H₂O)₂₀₀ clusters, 2.4 × 10⁻¹⁴ cm² for (N₂O)₃₅₀ clusters, and 5.0 × 10⁻¹⁷ cm² for (N₂)₂₆₀ clusters; finally, at E = 30 eV, σ⁻ = 3.6 × 10⁻¹⁷ cm² for (N₂O)₁₀ clusters and 3.0 × 10⁻¹⁷ cm² for (N₂)₁₂₅ clusters. Original Russian Text ? A.A. Vostrikov, D.Yu. Dubov, 2006, published in Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 76, No. 12, pp. 1–15.     

Bounds on charged lepton mixing with exotic charged leptons

We examine the effects of mixing induced light heavy charged lepton neutral currents on the partial wave amplitude for the process l⁺l⁻ →ZZ (withl = e,μ or τ). By imposing the constraints that the amplitude should not exceed the perturbative unitarity limit at high energy (√s = Λ), we obtain bounds on light heavy charged lepton mixing parameter sin²(2θ _L ^a ) where θ _L ^a is the mixing angle of the ordinary charged lepton with its exotic partner. For Λ = 1 TeV, no bound is obtained on sin² (2θ _L ^a ) form _E < 0.69 TeV. However, sin² (2θ _L ^a ) ≤ 1.52×10⁻⁵ form _E = 5 TeV, sin² (2θ _L ^a ) ≤ 2.41 ×10⁻⁷ form _E = 10 TeV. Similarity for Λ = ∞ no bound is obtained on sin² (2θ _L ^a ) for m_E < 1.97 TeV and sin² (2θ _L ^a ) ≤ 0.15 form _E = 5 TeV and sin² (2θ _L ^a ) ≤ 3.88×10^-2 form _E = 10 TeV.     

Optical properties of Tm,Mg:LiTaO3 laser crystal

A Tm, Mg co-doped LiTaO₃ crystal has been grown by Czochralski method. Room temperature polarized absorption spectra and fluorescence spectrum of the Tm, Mg:LiTaO₃ crystal were measured and analyzed. The maximum absorption cross-section is 6.0791 × 10⁻²⁰ cm² at around 790 nm with full width at half maximum of 5 nm. The emission cross-section of ³ F ₄ manifold was 2.2 × 10⁻²⁰ cm². The spectroscopic parameters of Tm³⁺ ion were calculated by applying the Judd-Ofelt approach, and the intensity parameters Ω₂, Ω₄, and Ω₆ were obtained to be 7.71 × 10⁻²⁰, 1.09 × 10⁻²⁰, and 1.16 × 10⁻²⁰ cm², respectively. The branching ratios and radiative lifetimes were also presented and the radiative lifetime of Tm^{3+ 3} F ₄ → ³ H ₆ transition is 968.3 μs. The results were also analyzed and compared with other Tm³⁺ doped hosts.     

Incorporation of Sn into epitaxial GaAs grown from the liquid phase

The incorporation of Sn into LPE GaAs was studied as a function of the atomic fractionx _Sn ^l of Sn in the liquid (1.6×10⁻⁴≤x _Sn ^l ≤0.54), the growth temperatureT _K and the cooling rate α. The diffusion coefficient of As in Ga for moderate Sn-doping was deduced from the growth velocities to beD _As (760° C)=(3.3±1.0)×10⁻⁵ cm²/s. The epitaxial layers were analyzed after van der Pauw with special emphasis on the sources of experimental error. With the aid of current mobility theories the concentrations of the ionized donors and acceptors were derived. From their dependence onx _Sn ^l , on α and onT _K combined with the Schottky-barrier model of Sn incorporation it can be concluded that the melt and the growing crystal surface were in thermal equilibrium. The diffusion coefficient of Sn in GaAs is about 8×10⁻¹⁴ cm²/s at 760° C. The distribution coefficient for Sn increases from 4.4×10⁻⁵ to 12.3×10⁻⁵ in the temperature range from 690 to 800° C. The total Sn incorporationx _Sn ^s was measured using the atomic absorption spectroscopy for the first time down tox _Sn ^s =10¹⁷/cm³. From these data it can be concluded that up tox _Sn ^l =0.54 the dopant Sn is incorporated as donor and as acceptor only and that within the experimental scatter there is no indication of incorporation as a neutral species.     

Integral energy spectrum of primary cosmic rays at high energies

The integral energy spectrum of primary cosmic rays has been obtained. In the energy range (2.4×10³−1.1×10⁵ GeV), the spectrum of all nuclei is consistent with a power law of indexγ=1.55±0.06 and the flux of all nuclei is:N(⩾E ₀)⋍(5.1±1.8)×10⁻¹×E ₀ ^−1.55 particles/cm² sterad. sec., whereE ₀ is in GeV. The spectrum of primaryα-particles in the energy range (4.4×10³−4.8×10⁴) GeV is also consistent with a power law of indexγ=1.71±0.12 and the flux is:N(⩾E ₀)=(4.2±1.4)×10⁻¹×E ₀ ^−1.71 , particles per cm² sterad. sec, whereE ₀ is in GeV.     

Determination of Enoxacin Using Tb Composite Nanoparticles Sensitized Luminescence Method

In our study, terbium-acetylacetone (Tb-acac) composite nanoparticles have been prepared under vigorous ultrasonic irradiation. The nanoparticles are water soluble, stable and have extremely narrow emission bands and high internal quantum efficiencies. They were used as fluorescence probes in the determination of enoxacin (Enox) based on the fluorescence enhancement of nanoparticles through fluorescence resonance energy transfer (FRET). The influence of buffer solution on the fluorescence intensity was investigated. Under the optimum conditions, the fluorescence intensity of the Tb-acac-Enox system is linearly proportional to the Enox concentration in the Enox concentration range of 2 × 10⁻⁷–1 × 10⁻⁴ M. The correlation coefficient for the calibration curve was 0.9976. The limit of detection as defined by IUPAC, C _LOD = 3S _b/m (where S _b is the standard deviation of the blank signals and m is the slope of the calibration graph) was found to be 3 × 10⁻⁸ M. The relative standard deviation (RSD) for six repeated measurements of 1 × 10⁻⁴ M Enox was 1.35%. The method was applied to the determination of Enox in pharmaceutical formulation and recovery results were obtained from urine samples.     

Table-top kHz hard X-ray source with ultrashort pulse duration for time-resolved X-ray diffraction

The interaction of ultrashort laser pulses with solid state targets is studied concerning the production of short X-ray pulses with photon energies up to about 10 keV. The influence of various parameters such as pulse energy, repetition rate of the laser system, focusing conditions, the application of prepulses, and the chirp of the laser pulses on the efficiency of this highly nonlinear process is examined. In order to increase the X-ray flux, the laser pulse energy is increased by a 2nd multipass amplifier from 750 μJ to 5 mJ. By applying up to 4 mJ of the pulse energy a X-ray flux of 4×10¹⁰ Fe K _α photons/s or 2.75×10¹⁰ Cu K _α photons/s are generated. The energy conversion efficiency is therefore calculated to η _Fe≈1.4×10⁻⁵ and η _Cu≈1.0×10⁻⁵. The X-ray source size is determined to 15×25 μm². By focusing the produced X-rays using a toroidally bent crystal a quasi-monochromatic X-ray point source with a diameter of 56 μm×70μm is produced containing ≈10⁴ Fe K _α1 photons/s which permits the investigation of lattice dynamics on a picosecond or even sub-picosecond time scale. The lattice movement of a GaAs(111) crystal is shown as a typical application.     

Structure,thermal properties,conductivity and electrochemical stability of di-urethanesil hybrids doped with LiCF<Subscript>3</Subscript>SO<Subscript>3</Subscript>

Variable chain length di-urethane cross-linked poly(oxyethylene) (POE)/siloxane hybrid networks were prepared by application of a sol-gel strategy. These materials, designated as di-urethanesils (represented as d-Ut(Y′), where Y′ indicates the average molecular weight of the polymer segment), were doped with lithium triflate (LiCF₃SO₃). The two host hybrid matrices used, d-Ut(300) and d-Ut(600), incorporate POE chains with approximately 6 and 13 (OCH₂CH₂) repeat units, respectively. All the samples studied, with compositions ∞ > n ≥ 1 (where n is the molar ratio of (OCH₂CH₂) repeat units per Li⁺), are entirely amorphous. The di-urethanesils are thermally stable up to at least 200 °C. At room temperature the conductivity maxima of the d-Ut(300)- and d-Ut(600)-based di-urethanesil families are located at n = 1 (approximately 2.0 × 10⁻⁶ and 7.4 × 10⁻⁵ Scm⁻¹, respectively). At about 100 °C, both these samples also exhibit the highest conductivity of the two electrolyte systems (approximately 1.6 × 10⁻⁴ and 1.0 × 10⁻³ Scm⁻¹, respectively). The d-Ut(600)-based xerogel with n = 1 displays excellent redox stability.     

Method for measuring chemical diffusion coefficients in solids

Experiments were performed with temperature programmed desorption of hydrogen and deuterium adsorbates on small platinum spheres. Beyond the expected desorption peak of these adsorbates at around 300 K sample temperature an additional desorption peak at higher temperatures was observed. This additional peak is explained by the diffusion of hydrogen or deuterium atoms from the inside of the spheres to their surfaces with final desorption from these surfaces. The visibility of this second high temperature desorption peak is supported by a small diameter of the platinum spheres. Platinum spheres with diameters around 64 μm were used. The sample temperature at which the second peak was observed depends on the parameters: diameter of the platinum spheres, heating rate of the sample and chemical diffusion coefficient of hydrogen or deuterium in platinum. A theory, which assumes that the chemical diffusion coefficient can be described with an Arrhenius ansatz, was developed to simulate the occurrence of the second peak. The combination of these kinds of experiments with the theory gives a method to measure chemical diffusion coefficients. This method can be called temperature programmed diffusion. At 510 K sample temperature the diffusion coefficient 1.61×10⁻¹² m²/s of hydrogen in platinum and the diffusion coefficient 1.40×10⁻¹² m²/s of deuterium in platinum was measured.     

Dynamics of liquid silane

Neutron scattering of cold neutrons from liquid silane at 137° K and 98°K is explained on the basis of a simple model. The rotational diffusion constant,D _r, and the delay time,τ ₀, after which rotational diffusion may be said to occur are derived on the basis of this model. At 137° K we getD _r=0.22×10¹³ sec⁻¹ andτ ₀=0.68×10⁻¹³ sec. At 98°KD _r (=0.06×10¹³ sec⁻¹) is down by a factor of more than three butτ ₀=(0.54×10⁻¹³ sec) shows only a small change. By comparison with data on liquid CH₄ it is concluded that the law of corresponding states is not applicable for describing rotational dynamics of CH₄ and SiH₄. Rotational motions in SiH₄ are more hindered than in CH₄ at the same reduced temperature.     

In vivo quantification of propylene glycol,glucose and glycerol diffusion in human skin with optical coherence tomography

The purpose of study is to quantify and compare diffusion of propylene glycol, glucose, glycerol in the human skin in vivo noninvasively. Optical coherence tomography (OCT) was utilized in the functional imaging of optical cleaning agents for monitoring and quantifying the permeability coefficients (PCs) of them. Our experiments showed that the permeability coefficient of 40% propylene glycol from different subjects was averaged and found to be (2.52 ± 0.02) × 10⁻⁶ cm/s, the permeability coefficient of 40% glucose was (1.94 ± 0.05) × 10⁻⁶ cm/s, and the permeability coefficient of 40% glycerol was (1.82 ± 0.04) × 10⁻⁶ cm/s. The results indicated that the diffusion of propylene glycol solutions was faster than that of glucose solution, and the diffusion of glucose solutions was faster than that of glycerol solutions. The dependence of the permeability on the different hyperosmotic analytes could potentially be used in various basic science and clinical fields, such as optical clearing of tissues and cells as well as in clinical pharmacology.     

Influence of iodine on the electrical properties of magnesium phthalocyanines thin film devices

The influence of iodine on the electrical properties of sandwich structures of magnesium phthalocyanine (Mg Pc) thin films with gold and aluminium electrodes has been investigated. The various electrical properties and different electrical parameters of the iodine-doped Mg Pc thin film devices have been estimated and compared with the values of normal Mg Pc devices from the analysis of the current-voltage characteristics. Generally samples showed an asymmetric conductivity both under forward and reverse bias. From our study we found that iodine doped Mg Pc films showed an enhanced electrical conductivity of nearly ten times that of typical Mg Pc. At low voltages the films showed an ohmic conduction with a hole concentration of P₀ = 6.34 × 10¹⁸ m⁻³ and hole mobility μ = 9.16 × 10⁻⁵ m ² V⁻¹ s⁻¹, whereas at higher voltage levels the conduction is dominated by space charged limited conduction (SCLC) with a discrete trapping level of 1.33 × 10²² m⁻³ at 0.63 eV above the valance band edge. The ratio of the free charges to trapped charges (trapping factor) for the doped samples was found to be 1.07 × 10⁻⁷. Furthermore the reverse conduction mechanisms have also been investigated. From the current limitations in the reverse condition a strong rectifying behaviour was evident which was attributed to Poole-Frankel emission with a field-lowering coefficient of value 2.24 × 10⁻⁵ eV m^1/2 V^−1/2.     

Influence of Ar, Ne, Xe, and CCl4 impurities on luminescence kinetics of Cd II ions (5s22D5/2-5p2P3/2 transition, λ = 441.6 nm) in He-Cd mixture

The luminescence kinetics of the Cd II ion at a wavelength of 441.6 nm has been studied experi-mentally in a high-pressure He-Cd mixture in the presence of Ar, Ne, Xe, and CCl₄ impurities. Cadmium ions were excited through the bombardment of a cadmium foil heated up to 240°C by a pulsed electron beam with an electron energy of 150 keV, a pulse duration of 3 ns, and a current of 500 A. The constants of collisional quenching of the Cd II 5s ^{2 2} D _5/2 level by Ar, Ne, and Xe atoms and CCl₄ molecules and the integral luminescence quenching constants of this level in the helium medium by these impurity gases have been determined. The constants of collisional quenching appeared to be 8.1 × 10⁻¹² (Ar), 1.2 × 10⁻¹² (Xe), 1.5 × 10⁻¹³ (Ne), and 1.8 × 10⁻¹⁰ cm³/s (CCl₄, for λ = 325 nm), while the integral constants were found to be, respectively, 4.1 × 10⁻¹¹, 3.4 × 10⁻¹¹, 9.5 × 10⁻¹², 1.4 × 10⁻⁹ cm³/s for Ar, Ne, Xe, and CCl₄ at a buffer gas pressure of 1 atm. Original Russian Text ? A.I. Miskevich, Liu Tao, 2009, published in Optika i Spektroskopiya, 2009, Vol. 107, No. 1, pp. 45–49.