Structure and adhesion of MoSi2/Ni interfaces: Evaluation of MoSi2 as an alternative bond coat alloy

We use density functional theory to evaluate the stability of molybdenum disilicide coatings on a nickel substrate, as a possible bond coat alloy for high temperature coating applications. We consider the MoSi₂(0 0 1)/Ni(1 1 1), MoSi₂(1 0 0)/Ni(1 1 1), and MoSi₂(1 1 0)/Ni(1 1 1) interfaces and predict quite strong (3.5-3.8 J/m²) adhesion of this metal-silicide ceramic to nickel. The origin of this strong adhesion is elucidated by examining the geometric and electronic structure of the interfaces. We predict that Mo and Si atoms at the interface primarily occupy Ni 3-fold hollow sites, the typical adsorption site on Ni(1 1 1). Projected local densities of states and electron density difference plots reveal a mixture of localized, covalent Si-Ni bonds and more delocalized metallic Mo-Ni bonding, as the origin of the strong interfacial bonding. As emphasized in our earlier work, creation of strong covalent bonds at interfaces results in very strong adhesion. Such strong adhesion makes MoSi₂ a potential candidate for use in thermal barrier applications, in conjunction with a yttria-stabilized zirconia topcoat.     

Conductivity and water uptake of Sr4(Sr2Nb2)O11·nH2O and Sr4(Sr2Ta2)O11·nH2O

The hydrated oxygen deficient complex perovskite-related materials Sr₄(Sr₂Nb₂)O₁₁·nH₂O and Sr₄(Sr₂Ta₂)O₁₁·nH₂O were studied at high water vapour pressures over a large temperature range by electrical conductivity measurements, thermogravimetry (TG), and X-ray powder diffraction (XRPD). In humid atmospheres both materials are known to exhibit protonic conductivity below dehydration temperatures, with peak-shaped maxima at about 500 °C. In this work we show that the peaks expand to plateaus of high conductivity from 500 to 700 °C at a water vapour pressure of 1 atm. However, in situ synchrotron XRPD of Sr₄(Sr₂Nb₂)O₁₁·nH₂O as a function of temperature shows that these observations are in fact coincident with melting and dehydration of a secondary phase Sr(OH)₂. The stability of Sr₄(Sr₂Nb₂)O₁₁·nH₂O and Sr₄(Sr₂Ta₂)O₁₁·nH₂O in humid atmospheres is thus insufficient, causing decomposition into perovskites with lower Sr content and SrO/Sr(OH)₂ secondary phases. This, in turn, rationalizes the observation of peaks and plateaus in the conductivity of these materials.     

Enhanced critical current densities in Cu-sheathed MgB2

Micron-scale mixing of magnesium and boron powders by mechanical alloying allows the MgB₂ formation reaction to proceed as low as 450 °C, with high-quality material formed in an hour at 600 °C. At these low reaction temperatures the reaction can be performed in situ in a copper sheath, and it is found that the presence of copper enhances the superconducting properties of the MgB₂. Self-field critical current densities, calculated from full critical-state simulation of magnetization hysteresis, are up to 7 × 10⁵ A/cm² at 13.6 K and 1 × 10⁵ A/cm² at 30 K.     

Effect of surface roughness of TiO2 films on short-circuit current density of photoelectrochemical cell of ITO/TiO2/PVC-LiClO4/graphite

This paper reports the effect of surface topography of titanium dioxide films on short-circuit current density of photoelectrochemical solar cell of ITO/TiO₂/PVC-LiCLO₄/graphite. The films were deposited onto ITO-covered glass substrate by screen-printing technique. The films were tempered at 300 °C, 350 °C, 400 °C, 450 °C and 500 °C for 30 min to burn out the organic parts and to achieve the films with porous structure. The surface roughness of the films were studied using scanning electron microscope (SEM). Current–voltage relationship of the devices were characterized in dark at room temperature and under illumination of 100 mW cm⁻² light from tungsten halogen lamp at 50 °C. The device utilising the TiO₂ film annealed at 400 °C produces the highest short-circuit current density and open-circuit voltage as it posses the smoothest surface topography with the electrolyte. The short-circuit current density and open-circuit voltage of the devices increase with the decreasing grain size of the TiO₂ films. The short-circuit current density and open-circuit voltage are 0.6 μA/cm² and 109 mV respectively.     

Effect of BiFeO3 addition on Bi2O3–ZnO–Nb2O5 based ceramics

In this paper, low temperature sintering of the Bi₂(Zn_1/3Nb_2/3)₂O₇ (β-BZN) dielectric ceramics was studied with the use of BiFeO₃ as a sintering aid. The effects of BiFeO₃ contents and the sintering temperature on the phase structure, density and dielectric properties were investigated. The results showed that the sintering temperature could be decreased and the dielectric properties could be retained by the addition of BiFeO₃. The structure of BiFeO₃ doped β-BZN was still the monoclinic pyrochlore phase. The sintering temperature of BiFeO₃ doped β-BZN ceramics was reduced from 1000 °C to 920 °C. In the case of 0.15 wt.% BiFeO₃ addition, the β-BZN ceramics sintered at 920 °C exhibited good dielectric properties, which were listed as follows: ε_r = 79 and tan δ = 0.00086 at a frequency of 1 MHz. The obtained properties make this composition to be a good candidate for the LTCC application.     

Effect of spraying power on microstructure and bonding strength of MoSi2-based coatings prepared by supersonic plasma spraying

MoSi₂-based oxidation protective coatings for SiC-coated carbon/carbon composites were prepared using a supersonic plasma spraying at the power of 40 kW, 45 kW, 50 kW and 55 kW, respectively. Effect of spraying power on the microstructure and bonding strength of MoSi₂-based coatings was studied. The results show that coatings become more and more compact and the bonding strength increases when the spraying power increases from 40 kW to 50 kW. At the power of 50 kW, the coatings were dense and the bonding strength reached a maximum value of 14.5 MPa. As the spraying power is of sufficient magnitude, many cracks and pores reappaer in coatings and the bonding strength between coating and substrate also decreases.     

Heterogeneous fixation of N2: Investigation of a novel mechanism for formation of NO

Formation of NO initiated by heterogeneous fixation of N₂ during pyrolysis is investigated experimentally and theoretically. The experiments were conducted with beech wood as well as with the pure biomass components cellulose, xylan, and lignin. The NO formation during char oxidation was recorded as function of pyrolysis atmosphere (N₂ or Ar), pyrolysis temperature (700–1050 °C), and oxidizing atmosphere (O₂ in N₂ or Ar). The results confirm earlier reports that biomass char may be enriched in N during pyrolysis at 900 °C and above. The N-uptake involves re-capture of N-volatiles as well as uptake of N₂. During char oxidation, the captured N is partly oxidized to NO, resulting in increased NO formation. The NO yield from oxidation of beech wood char made in N₂ increases with pyrolysis temperature, and is about a factor of two higher at 1050 °C than the corresponding yield from chars made in Ar. The experiments with pure materials show that the lignin char has the strongest ability to form NO from uptake of N₂, while xylan char forms only small amounts of NO from N₂. Density Functional Theory (DFT) calculations on model chars have revealed a number of chemisorption sites for N₂, many of which are weakly bound and therefore expected to have a short half-life at the higher pyrolysis temperatures. However, the chemisorption of N₂ across a single ring of the armchair surface was found to have an activation energy of 344 ± 30 kJ mol⁻¹ and form a stable, exothermic product with cyano groups. This demonstrates that at least one channel exists for the high-temperature incorporation of N₂ into a char which could give rise to the observed increase in NO release in subsequent char oxidation.     

Synthesis, phase and microstructure characteristics of Pb(Zr0.52Ti0.48)O3–(Bi3.25La0.75)Ti3O12 ceramics

Ceramics with formula (1 − x)Pb(Zr_0.52Ti_0.48)O₃–x(Bi_3.25La_0.75)Ti₃O₁₂ (when x = 0, 0.1, 0.3, 0.5, 0.7, 0.9 and 1.0) were prepared by a solid-state mixed-oxide method and sintered at temperatures between 950 °C and 1250 °C. It was found that the optimum sintering temperature was 1150 °C at which all the samples had densities at least 95% of theoretical values. Phase analysis using X-ray diffraction indicated the existence of BLT- as well as PZT-based solid solutions with corresponding lattice distortion. Scanning electron micrographs of ceramic surfaces showed a plate-like structure in BLT-rich phase while the typical grain structure was observed for PZT-rich phase. The grain sizes of both pure BLT and PZT ceramics were found to decrease as the relative amount of the other phase increased. This study suggested that tailoring of properties of this PZT–BLT system was possible especially on the BLT-rich side due to its large solubility limit.     

The order with respect to oxygen and the activation energy for the burning of an anthracitic char in O2 in a fluidised bed, as measured using a rapid analyser for CO and CO2

Measurements of the oxidation of a coal char in a fluidised bed have the advantages that the rates of heat and mass transfer to and from a reacting particle are large and characterised well. However, problems have arisen from a combination of the slow, but typical, response–time (4 s) of the analysers for CO and CO₂ and the slow mixing of gases when filling a fairly large fluidised bed. The resulting time constant for the sampling system was 8 s and comparable to the time for combustion at 900 °C or above. The purpose of this work was to measure the kinetics of oxidation of a char in a smaller fluidised bed (with a shorter mixing time) using an analyser for CO and CO₂ with a response time as low as 0.1 s. The result is that the oxidation of an anthracitic char is now found to be first order in O₂ between 700 and 900 °C; at 900 °C the order previously measured was almost zero. The activation energy is now measured here to be 145 ± 25 kJ/mol, in agreement with some early work.     

Pyroelectric properties in three phases coexistence Pb[(Mn0.33Nb0.67)0.5(Mn0.33Sb0.67)0.5]0.08(ZrxTi1−x)0.92O3 lead ceramics

The bulk dense Pb[(Mn_0.33Nb_0.67)_0.5(Mn_0.33Sb_0.67)_0.5]_0.08(Zr_xTi_1−x)_0.92O₃ pyroelectric ceramics have been successfully prepared by the conventional solid method. The effect of three phases coexistence in the ceramics is studied. When x = 0.95 and 0.85 in the ceramics, the maximum pyroelectric coefficient peaks appear at 23 °C and 45 °C, and the maximum values are 26.5 × 10⁻⁴ C/m² °C and 25.5 × 10⁻⁴ C/m² °C, respectively. The maximum pyroelectric coefficient appears large while the peaks widths are small. When the two kinds of ceramic powders mixed with the mol ratio of 2:1, the pyroelectric coefficient of the ceramics is above 10.0 × 10⁻⁴ C/m² °C in a broad temperature range from 20 °C to 55 °C. The possible physical mechanism of the temperature broadened phenomenon is briefly discussed.     

Ion-beam irradiation effect on solid-phase growth of β-FeSi2

Effects of Ar⁺ ion-beam irradiation on solid-phase growth of β-FeSi₂ have been investigated. Fe (10 nm)/Si structures were irradiated with 25 keV Ar⁺ (5.0×10¹⁵ cm⁻²) at a temperature of 25°C (sample A) or 400°C (sample B), and subsequently annealed at 800°C. A reference was obtained after annealing without irradiation (sample C). X-ray diffraction results indicated that β-FeSi₂ was formed after annealing at 800°C for 5 h, and the formation rate was the fastest for sample A and the slowest for sample C, i.e., A>BC. However, Auger electron spectroscopy measurements showed that atomic mixing at Fe/Si interface before annealing was B>AC. These results suggested that amorphization of Si substrate, in addition to atomic mixing, enhanced the solid-phase growth of β-FeSi₂, which was confirmed experimentally. Moreover, a direct band gap of 0.89 eV was observed for the sample with pre-amorphization by the Fourier-transform infrared (FT-IR) spectroscopy measurements. These enhancement effects were attributed to that the phase transition to β-FeSi₂ was accelerated by atomic arrangement induced during annihilation of excess vacancies. These enhancement effects can be utilized for nano-fabrication of β-FeSi₂ by using focused ion-beam irradiation.     

Influence of ceramic oxide materials on lithium based potentiometric CO2 sensors

In these potentiometric sensors, a mixed binary carbonate sensing material consisting of 90 mol% Li₂CO₃ and 10 mol% BaCO₃ was modified by adding ceramic oxide materials such as SiO₂, B₂O₃, La₂O₃, Bi₂O₃, CeO₂ and In₂O₃ in different mol% concentrations. Various sensors mixed with these external oxides have shown good performance at operating temperatures below 300 °C. Scanning electron microscopy reveals that a glassy sensing phase is formed in the sensing bi-carbonate by the addition of ceramic oxides and sintered at 600 °C for 1 h. The sensor mixed with SiO₂:B₂O₃:Bi₂O₃ in 1:2:1 mol% showed an excellent response and recovery characteristics and followed a fair Nernstian behavior with a ΔEMF/dec value of −48.18 at as low as 150 °C. The decrease in operating temperature is attributed to the enhanced lithium ion migration through the glassy sensing phase of the sensing electrode.     

Formation of atomically smooth SiO2/SiC interfaces at ∼120 °C by use of nitric acid oxidation method

Conventional thermal oxidation of SiC requires heating at ∼1100 °C. In the present study, we have developed a method of oxidizing SiC at low temperatures (i.e., ∼120 °C) to form relatively thick silicon dioxide (SiO₂) layers by use of nitric acid. When 4H-SiC(0 0 0 1) wafers are immersed in 40 wt% HNO₃ at the boiling temperature of 108 °C and the boiling is kept for 5 h after reaching the azeotropic point (i.e., 68 wt% HNO₃ at 121 °C), 8.1 nm thick SiO₂ layers are formed on the SiC substrates. High resolution transmission electron microscopy measurements show that the SiO₂/SiC interface is atomically flat and the SiO₂ layer is uniform without bunching. When SiC is immersed in an azeotropic mixture of HNO₃ with water from the first, the SiO₂ thickness is less than 0.3 nm. The metal-oxide-semiconductor (MOS) diodes with the SiO₂ layer formed by the nitric acid oxidation method possess a considerably low leakage current density.     

Luminescent silicon nanocrystal dots fabricated by SiCl4/H2 RF plasma-enhanced chemical vapor deposition

Luminescent nanocrystalline Si dots were fabricated directly on thermally grown SiO₂ at 120°C by conventional RF plasma-enhanced chemical vapor deposition using tetrachlorosilane, SiCl₄ and H₂. As-deposited Si dot exhibits photoluminescence (PL) in the visible region, consisting of two broad bands corresponding to photon energies of 1.38 and 1.48 eV. Storage in air enhances PL and shifts the PL peak energy to higher wavelengths for dots of diameter less than 10 nm. Fourier transform attenuated total reflection absorption spectroscopy (FTIR-ATR) study reveals that the spontaneous oxidation proceeds until saturation after 70 h at dot sizes of 3–5 nm. The relationship between PL intensity, blueshift of PL peak energy, and surface termination species during oxidation indicates that these changes are attributed to the increased density of radiative centers at the Si nanocrystal dot/SiO₂ interface and enhancement of the quantum confinement effect.     

Preparation and electrical properties of a pyrochlore-related Ce2Zr2O8−x phase

A pyrochlore-related Ce₂Zr₂O_8−x phase has been prepared in a reduction reoxidation process from Ce_0.5Zr_0.5O₂ powders. Ce₂Zr₂O_8−x, based on a cubic symmetry with a=1.053 nm, decomposes in nitrogen at 800 °C, but remains stable up to 900 °C in air. It shows mixed oxygen ionic and electronic conductivity. The bulk conductivity at 700 °C is 4×10⁻⁴ S cm⁻¹ in air and 1×10⁻² S cm⁻¹ in nitrogen, and the activation energy is 1.27 eV in air. In nitrogen, the Arrhenius law is not obeyed, and a curved plot was obtained from 400 to 700 °C; then, the conductivity decreased rapidly due to the thermal decomposition of Ce₂Zr₂O_8−x.     

Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures

We have developed low temperature formation methods of SiO₂/Si and SiO₂/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO₃ aqueous solutions at 120 °C), an ultrathin (i.e., 1.3-1.4 nm) SiO₂ layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 °C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 °C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO₂ gap-state density, and (iii) high band discontinuity energy at the SiO₂/Si interface arising from the high atomic density of the NAOS SiO₂ layer.For the formation of a relatively thick (i.e., ≥10 nm) SiO₂ layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in ∼40 wt% HNO₃ and azeotropic HNO₃ aqueous solutions, respectively. In this case, the SiO₂ formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO₂ layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO₂ layer is slightly higher than that for thermal oxide. When PMA at 250 °C in hydrogen is performed on the two-step NAOS SiO₂ layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 °C.A relatively thick (i.e., ≥10 nm) SiO₂ layer can also be formed on SiC at 120 °C by use of the two-step NAOS method. With no treatment before the NAOS method, the leakage current density is very high, but by heat treatment at 400 °C in pure hydrogen, the leakage current density is decreased by approximately seven orders of magnitude. The hydrogen treatment greatly smoothens the SiC surface, and the subsequent NAOS method results in the formation of an atomically smooth SiO₂/SiC interface and a uniform thickness SiO₂.     

Magnetic properties of melt-spun Sm2+Y(Co0.8Fe0.1Mn0.1)17BX alloys

Melt-spun ribbons with composition Sm_2+Y(Co_0.8Fe_0.1Mn_0.1)₁₇B_X (X=0–1.0 and Y=0–0.2) were fabricated with a wheel speed of 50 m/s, followed by annealing in the temperature range of 500–800°C for 2.5–60 min. Our results show that all the ribbons annealed up to 800°C are composed of a TbCu₇-type phase as the main phase. The highest coercivity of 8.7 kOe is obtained in a Sm-rich sample with composition Sm_2.2(Co_0.8Fe_0.1Mn_0.1)₁₇ annealed at 750°C for 5 min. It is found that these magnets show a very promising high-temperature performance – much better than those of typical sintered 2 : 17 magnets.     

Band alignment of SiO2/Si structure formed with nitric acid vapor below 500 °C

A relatively thick (i.e., ∼9 nm) SiO₂ layer can be formed by oxidation of Si with nitric acid (HNO₃) vapor below 500 °C. In spite of the low temperature formation, the leakage current density flowing through the SiO₂ layer is considerably low, and it follows the Fowler-Nordheim mechanism. From the Fowler-Nordheim plots, the conduction band offset energy at the SiO₂/Si interface is determined to be 2.57 and 2.21 eV for HNO₃ vapor oxidation at 500 and 350 °C, respectively. From X-ray photoelectron spectroscopy measurements, the valence band offset energy is estimated to be 4.80 and 4.48 eV, respectively, for 500 and 350 °C oxidation. The band-gap energy of the SiO₂ layer formed at 500 °C (8.39 eV) is 0.68 eV larger than that formed at 350 °C. The higher band-gap energy for 500 °C oxidation is mainly attributable to the higher atomic density of the SiO₂ layer of 2.46 × 10²²/cm³. Another reason may be the absence of SiO₂ trap-states.     

Growth of ZnO thin films on c-plane Al2O3 by molecular beam epitaxy using ozone as an oxygen source

The growth of c-axis oriented ZnO thin films on c-plane Al₂O₃ via molecular beam epitaxy (MBE) using dilute ozone (O₃) as an oxygen source was investigated. Four-circle X-ray diffraction (XRD) indicates that films grown at 350 °C are epitaxial with respect to the substrate, but with a broad in-plane and out-of-plane mosaic. The films were highly conductive and n-type. Epitaxial film growth required relatively high Zn flux and O₃/O₂ pressure. The growth rate decreased rapidly as growth temperature was increased above 350 °C. The drop in growth rate with temperature reflects the low sticking coefficient of Zn at moderately high temperatures and limited ozone flux for the oxidation of the Zn metal. Characterization of the films included atomic force microscopy (AFM), X-ray diffraction, photoluminescence, and Hall measurements. These results show that molecular beam epitaxy of ZnO using ozone is rate limited by the ozone flux for growth temperatures above 350 °C.     

Preparation and properties of composite ceramic coating containing Al2O3–ZrO2–Y2O3 on AZ91D magnesium alloy by plasma electrolytic oxidation

A composite ceramic coating containing Al₂O₃–ZrO₂–Y₂O₃ was successfully prepared on AZ91D magnesium alloy by plasma electrolytic oxidation (PEO) technique in an alkaline aluminate electrolyte. The morphology, elemental and phase composition, corrosion behavior and thermal stability of the uncoated and coated samples were studied by environmental scanning electron microscopy (ESEM), energy dispersive X-ray spectrometer (EDS), X-ray diffractometer (XRD), electrochemical corrosion test, high temperature oxidation test and thermal shock test. The results showed that the composite ceramic coating was composed of Al₂O₃, c-ZrO₂, t-ZrO₂, Y₂O₃ and some magnesium compounds, such as MgO, MgF₂ and MgAl₂O₄. After PEO treatment, the corrosion potential of AZ91D alloy was increased and the corrosion current density was significantly reduced. Besides, the coated magnesium alloys also showed excellent high temperature oxidation resistance and thermal shock resistance at 500 °C environment.