Surlyn®/[silicon oxide] hybrid materials. 2. Physical properties characterization

The influence of an in situ‐grown, sol → gel‐derived silicon oxide filler on mechanical, gas permeation and solvent affinity properties of Surlyn® materials, and melt processibility of Surlyn®/[silicon oxide] hybrid resin, was studied. Tensile modulus increases while elongation‐at‐break decreases with increasing silicon oxide uptake. He gas permeation vs. pressure profiles imply dual mode sorption. Swelling in n‐hexane, 1‐PrOH and xylene decreases as silicon oxide loading increases, the highest uptake being that of xylene. [Surlyn®Zn⁺²]/[silicon oxide] has better solvent resistance than the H‐form hybrid for each solvent. Affinity of the Zn‐form hybrid for xylene is considerably greater than that for 1‐PrOH and n‐hexane. Melt flow index of the filled H‐form is lower than that of the unfilled H‐form but higher than that of the partially Zn neutralized unfilled form. FTIR analysis of hybrids previously subjected to the melt flow index experiment shows that the silicon oxide phase remained intact but that the high temperatures drove condensation reactions between SiOH groups. After in situ sol–gel reactions and drying [Surlyn®‐H]/[silicon oxide] flakes were passed through an extruder to assess the effect on silicon oxide structure of melt‐processing conditions. All silicon oxide IR fingerprint bands for the processed hybrid persist, the spectrum closely resembling that of a nonextruded hybrid including the signature of Si–OH groups. ²⁹Si solid‐state NMR spectroscopy was used to probe degree of molecular connectivity within the silicon oxide phase. The spectrum is consistent with those of nonextruded hybrids in that Si atom coordination around SiO₄ units is predominantly Q₃ and Q₄, the bias in the distribution toward Q₃ being in harmony with the IR results. © 1999 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 37: 143–154, 1999     

Electrical properties of polypyrrole/p‐InP structure

The polypyrrole/p‐InP structure has been fabricated by the electrochemical polymerization of the organic polypyrrole onto the p‐InP substrate. The current–voltage (I–V), capacitance–voltage (C–V), and capacitance–frequency (C–f) characteristics of the PPy/p‐InP structure have been determined at room temperature. The structure showed nonideal I–V behavior with the ideality factor and the barrier height 1.48 and 0.69 eV respectively. C–f measurements of the structure have been carried out using the Schottky capacitance spectroscopy technique and it has been seen that there is a good agreement between the experimental and theoretical values. Also, it has been seen that capacitance almost show a plateau up to a certain value of frequency, after which, the capacitance decreases. The higher values of capacitance at low frequencies were attributed to the excess capacitance resulting from the interface states in equilibrium with the p‐InP that can follow the a.c. signal. The interface state density N_ss and relaxation time τ of the structure were determined from C–f characteristics. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 1572–1579, 2006     

Interfacial properties of thermally oxidized Ta2Si on Si

Many refractory metal silicides have received great attention due to their potential for innovative developments in the silicon‐based microelectronic industry. However, tantalum silicide, Ta₂Si, has remained practically unnoticed since its successful application in silicon carbide technology as a simple route for a high‐k dielectric formation. The thermal oxidation of Ta₂Si produces high‐k dielectric layers, (O? Ta₂Si)‐based on a combination of Ta₂O₅ and SiO₂. In this work, we investigate the interfacial properties of thermally oxidized (850–1050 °C) Ta₂Si on commercial silicon substrates. The implications of diffusion processes in the dielectric properties of an oxidized layer are analyzed. In particular, we observe migration of tantalum pentoxide nanocrystals into the substrate with increasing oxidation temperature. An estimation of the insulator charge and interfacial O? Ta₂Si/Si trap density is also presented. Copyright © 2008 John Wiley & Sons, Ltd.     

Quantum‐Transport Characteristics of a p–n Junction on Single‐Layer TiS3

By using density functional theory and non‐equilibrium Green′s function‐based methods, we investigated the electronic and transport properties of a TiS₃ monolayer p–n junction. We constructed a lateral p–n junction on a TiS₃ monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS₃ p–n junction. In addition, the spin‐dependent current–voltage characteristics of the constructed TiS₃ p–n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin‐polarized currents in the TiS₃ p–n junction. These prominent conduction properties of the TiS₃ p–n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single‐layered material.     

Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors

Titanium dioxide (TiO₂) thin films were deposited onto p‐Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80–200 W. The as‐deposited TiO₂ films were annealed at a temperature of 1023 K. The post‐annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO₂/p‐Si structure were determined from the capacitance–voltage and current–voltage characteristics. X‐ray diffraction studies confirmed that the as‐deposited films were amorphous in nature. After post‐annealing at 1023 K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers > 160 W showed the mixed anatase and rutile phases of TiO₂. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air‐annealed Al/TiO₂/p‐Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO₂/p‐Si (metal‐insulator‐semiconductor) was systematically investigated. Copyright © 2014 John Wiley & Sons, Ltd.     

Study on channel depletion in metal‐oxide‐semiconductor field effect transistor using top‐view imaging through scanning capacitance microscopy

Carrier profiles within the near‐surface channel region of n‐type metal‐oxide‐semiconductor field‐effect transistors (n‐MOSFETs) have been examined using scanning capacitance microscopy (SCM). After the removal of a poly‐Si gate electrode, we were able to assess the qualitative local carrier concentration within specified regions of an n‐MOSFET using static capacitance (dC/dZ) measurement with its bias dependence (dC/dZ–V spectra). We found that the dC/dZ‐signal at the center of the channel region lowers as the gate length is reduced. This result is attributed to the carrier depletion within the channel, which is consistent with the threshold voltage (V_th) characteristics of the device properties. Copyright © 2008 John Wiley & Sons, Ltd.     

Nanostructure‐Directed Physisorption vs Chemisorption at Semiconductor Interfaces: The Inverse of the HSAB Concept

A concept, complementary to that of hard and soft acid–base interactions (HSAB‐dominant chemisorption) and consistent with dominant physisorption to a semiconductor interface, is presented. We create a matrix of sensitivities and interactions with several basic gases. The concept, based on the reversible interaction of hard‐acid surfaces with soft bases, hard‐base surfaces with soft acids, or vice versa, corresponds 1) to the inverse of the HSAB concept and 2) to the selection of a combination of semiconductor interface and analyte materials, which can be used to direct a physisorbed vs chemisorbed interaction. The technology, implemented on nanopore coated porous silicon micropores, results in the coupling of acid–base chemistry with the depletion or enhancement of majority carriers in an extrinsic semiconductor. Using the inverse‐HSAB (IHSAB) concept, significant and predictable changes in interface sensitivity for a variety of gases can be implemented. Nanostructured metal oxide particle depositions provide selectivity and complement a highly efficient electrical contact to a porous silicon nanopore covered microporous interface. The application of small quantities (much less than a monolayer) of nanostructured metals, metal oxides, and catalysts which focus the physisorbtive and chemisorbtive interactions of the interface, can be made to create a range of notably higher sensitivities for reversible physisorption. This is exemplified by an approach to reversible, sensitive, and selective interface responses. Nanostructured metal oxides developed from electroless gold (Au_xO), tin (SnO₂), copper (Cu_xO), and nickel (NiO) depositions, nanoalumina, and nanotitania are used to demonstrate the IHSAB concept and provide for the detection of gases, including NH₃, PH₃, CO, NO, and H₂S, in an array‐based format to the sub‐ppm level.     

Si-C-bound alkyl chains on oxide-free Si: towards versatile solution preparation of electronic transport quality monolayers

We show that electronic transport quality alkyl chain mono-layers can be prepared from dilute solution, rather than from neat alkanes, and on Si (100) instead of (111) surfaces. High monolayer quality was deduced from XPS and from comparing current-voltage curves of Hg/alkyl/Si junctions with those for junctions with monolayers made from neat alkanes. XPS shows that limited surface oxidation does not harm the integrity of the monolayer. Solution preparation significantly widens the range of molecules that can be used for transport studies.     

Conductance and capacitance–frequency characteristics of polypyrrole/p‐type silicon structures

We formed a polypyrrole/p‐type silicon device by an anodization process. An aluminum electrode was used as an ohmic contact. From the current–voltage characteristics of the device, barrier height and ideality factor values of 0.662 eV and 1.734, respectively, were obtained from a forward‐bias current–voltage plot. Low capacitance–frequency and conductance–frequency measurements from 0.00 to 0.30 V with steps of 0.02 V were made. At each frequency, the measured capacitance decreased with increasing frequency because of a continuous distribution of the interface states in the frequency range of 5.0 Hz to 2.0 MHz. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 1334–1338, 2003     

The density of interface states and their relaxation times in Au/Bi4Ti3O12/SiO2/n‐Si(MFIS) structures

Bismuth titanate (Bi₄Ti₃O₁₂) (BTO) thin films were fabricated on an n‐type Si substrate and annealed by rapid thermal annealing methods. The I‐V measurement shows that the device has properties of Schottky diode with the Φ_B0 of 0.76 eV, n of 2.42, and leakage current of about 10^?7 A at ? 8 V. The experimental C‐V‐f and G/w‐V‐f characteristics of metal‐ferroelectric‐insulator‐semiconductor (MFIS) structures show fairly large frequency dispersion especially at low frequencies due to interface states N_ss. The energy distribution of (N_ss) has been determined by using the high‐low frequency capacitance (C_HF? C_LF) and conductance method. The relaxation time (τ) of interface states was calculated from the conductance method. It has been shown that both the N_ss and relaxation time increase almost exponentially with bias, which activates traps located at deeper gap energies. Copyright © 2011 John Wiley & Sons, Ltd.     

Considerations of the intermediate oxides via XPS elemental quantitative analysis for the thickness measurements of ultrathin SiO2 on Si

The thicknesses of intermediate oxides at the interface between ultrathin SiO₂ and Si substrates have been measured via XPS elemental quantitative analysis for some SiO₂/Si(100) and SiO₂/Si(111) samples with the silicon oxide thickness less than 2 nm. The measurements involve XPS determination of the Si relative atomic ratio, calculation of Si atomic densities for the intermediate oxide, etc. and then the intermediate oxide thicknesses and the number of monolayers are obtained by referencing the thickness data from two international comparisons for these samples. The results show that the thickness of the intermediate oxides is in the range 0.14–0.16 nm with an average value of 0.15 nm. The number of monolayers for the intermediate oxides at the interface is less than one monolayer with an average value of 0.60. In the present work, there are a series of approximations. By making these approximations many parameters, including L and R₀, used in the conventional calculation method are removed to give a simpler equation, which is valid when the thicknesses of SiO₂ overlayer and the intermediate oxides are very small. This, therefore, appears to be a simple and quick method to obtain approximate oxide thicknesses of modest accuracy. The present work does not in any way replace or improve on Eqns ( 2 –6) cited in the text. Copyright © 2010 John Wiley & Sons, Ltd.     

XPS analysis with external bias: a simple method for probing differential charging

The XPS spectra of thermally grown oxide layers on Si, Al, W and Hf substrates have been recorded while the samples were subjected to external d.c. voltage bias. The bias induces additional shifts in the measured binding energy differences between the XPS peaks of the oxide and that of the metal substrate in Si and Al (as probed both in the 2p and the KLL Auger regions), but not in W and Hf (as probed in the 4f region). These bias induced shifts are attributed to differential charging between the oxide layer and the substrate, which in turn is postulated to be related to the capacitance and inversely to the dielectric constant of the oxide layer. Accordingly, silicon dioxide with the smallest dielectric constant undergoes the largest differential charging, aluminium oxide is in the middle and no appreciable charging can be induced in the high‐k tungsten and hafnium oxides, all of which are ～6 nm thick. Copyright © 2004 John Wiley & Sons, Ltd.     

Investigation of a‐Si (N+)/c‐Si (P) hetero‐junction solar cell through AFORS‐HET simulation

In this paper, a TCO/a‐Si(N⁺)/a‐Si(i)/c‐Si(P)/Al‐BSF(P⁺) structure hetero‐junction (HJ) cell model is developed. With AFORS‐HET V3.0, we investigate the influence of amorphous silicon (a‐Si) emitter and amorphous silicon (a‐Si)/crystalline silicon (c‐Si) interface defects on the HJ cell performance. Through modulating a‐Si(N⁺) emitter doping concentration and band offset at a‐Si/c‐Si interface, a maximum width value of 103 nm inversion layer is observed in the c‐Si(P) side. For 1 Ω.cm c‐Si (P) substrate, emitter doping of over 1 × 10²⁰ cm^?3 is necessary for achieving a high‐efficiency a‐Si/c‐Si HJ cell. Furthermore, defects at a‐Si(N⁺)/c‐Si(P) interface severely affect the open circuit voltage (Voc) and short circuit current density (Jsc) of the cell. Meanwhile, simulation indicates that Voc is more sensitive to interface defect density (Dit) than Jsc. A thin a‐Si(i) layer between a‐Si(N⁺) and c‐Si(P) does induce great improvement in Voc of TCO/a‐Si(N⁺)/a‐Si(i)/c‐Si(P)/Al‐BSF(P⁺) cell. As a result, high cell efficiency of 22.27% is achieved for a‐Si(N⁺)/c‐Si(P) HJ Cell with optimized parameters. Copyright © 2010 John Wiley & Sons, Ltd.     

A New Chair‐shaped Conformation Containing HgHgOHgHgO: Synthesis and Structure of Hg4(L2)2(NO3)4 (L2 = morpholin‐4‐ylpyridin‐2‐ylmethyleneamine)

. The complex Hg₄(L²)₂(NO₃)₄ ( 1 ) (L² = morpholin‐4‐ylpyridin‐2‐ylmethyleneamine) has been synthesized and characterized by CHN analysis, IR, and UV/Vis spectroscopy. The crystal structure of 1 was determined using single‐crystal X‐ray diffraction. The crystal structure of 1 contains four mercury atoms, four nitrate anions (two terminal and two bridge ones) and two L² ligand molecules. A chair shape, six‐membered ring is formed with the sequence OHgHgOHgHg built from Hg–Hg dumbbells and oxygen atoms from the nitrate co‐ligands. In the crystal structure, the asymmetric unit of the compound is built up by one‐half of the molecule. It contains the Hg₂²⁺ moiety with a mercury–mercury bonded core, in which one diimine ligand is coordinated to one of the mercury atoms. The nitrate anions act as anisobidentate and bidentate ligands.     

The Synthesis and Molecular Structure of the First Two-Coordinate,Dinuclear σ-Bonded Mercury(I) RHgHgR Compound

A linear Si-Hg-Hg-Si arrangement and a Hg–Hg distance of 265.69 pm are exhibited by the first two-coordinate, dinuclear σ-bonded organomercury(I ) compound 1. It was formed unexpectedly in the reaction of two equivalents of the silane (Me₃SiMe₂Si)₃SiH with tBu₂Hg. In contrast if the reagents are allowed to react in a 1:1 ratio the expected mercury(II ) compound (Me₃SiMe₂Si)₃SiHgtBu is obtained.     

Synthetic and mechanistic aspects of preparation of phosphinito‐ and phosphito‐mercuries

A >P O⁻ ( 1 ) type of anion has been used as an efficient synthetic precursor of four‐coordinated compounds: R₂P(O) Hg (O)PR₂ ( 5 ) and R₂P(O) Hg Bz ( 3 ) (R = alkoxy, alkyl, aryl). They were obtained in good yield. Bis(t‐butyl‐phenylphosphinito‐P)mercury (meso and rac) ( 5c,d ) selectively decomposed into 1,2‐di‐t‐butyl‐1,2‐diphenyldiphosphane 1,2‐dioxide (meso and rac) ( 6c,d) . Furthermore, some mechanistic aspects of the synthesis of mentioned compounds are elaborated.© 2008 Wiley Periodicals, Inc. Heteroatom Chem 19:234–237, 2008; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/hc.20409     

Transport Processes at α‐Quartz–Water Interfaces: Insights from First‐Principles Molecular Dynamics Simulations

Car–Parrinello molecular dynamics (CP–MD) simulations are performed at high temperature and pressure to investigate chemical interactions and transport processes at the α‐quartz–water interface. The model system initially consists of a periodically repeated quartz slab with O‐terminated and Si‐terminated (1000) surfaces sandwiching a film of liquid water. At a temperature of 1000 K and a pressure of 0.3 GPa, dissociation of H₂O molecules into H⁺ and OH^? is observed at the Si‐terminated surface. The OH^? fragments immediately bind chemically to the Si‐terminated surface while Grotthus‐type proton diffusion through the water film leads to protonation of the O‐terminated surface. Eventually, both surfaces are fully hydroxylated and no further chemical reactions are observed. Due to the confinement between the two hydroxylated quartz surfaces, water diffusion is reduced by about one third in comparison to bulk water. Diffusion properties of dissolved SiO₂ present as Si(OH)₄ in the water film are also studied. We do not observe strong interactions between the hydroxylated quartz surfaces and the Si(OH)₄ molecule as would have been indicated by a substantial lowering of the Si(OH)₄ diffusion coefficient along the surface. No spontaneous dissolution of quartz is observed. To study the mechanism of dissolution, constrained CP–MD simulations are done. The associated free energy profile is calculated by thermodynamic integration along the reaction coordinate. Dissolution is a stepwise process in which two Si? O bonds are successively broken. Each bond breaking between a silicon atom at the surface and an oxygen atom belonging to the quartz lattice is accompanied by the formation of a new Si? O bond between the silicon atom and a water molecule. The latter loses a proton in the process which eventually leads to protonation of the oxygen atom in the cleaved quartz Si? O bond. The final solute species is Si(OH)₄.     

Device model for poly(o‐methoxyaniline) field‐effect transistor

We present a detailed study of the electric mechanism of a thin poly(o‐methoxyaniline) (POMA) field‐effect transistor. The device was prepared using Al‐Si/SiO₂/(interdigitated gold lines array)/POMA structure as the gate electrode, insulating layer, source‐drain electrodes, and active layer, respectively. A model is presented for the electrical characteristics of such a device that encompasses the disordered properties of the POMA, the source‐drain electrical‐field dependence of hole mobility, and the carrier and mobility gradients in directions perpendicular to the polymer–oxide interface. The fittings of source‐drain current versus source‐drain voltage, having as parameters the gate voltage, is in good agreement with the experimental data, and the dependence of both the carrier saturation velocity and of the carrier mobility with the gate voltage are obtained. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 43: 74–78, 2005     

Influence of interfaces on the rates of crosslinking in poly(dimethyl siloxane) coatings

We have determined with infrared spectroscopic ellipsometry how the nature of the interface between a thin poly(dimethyl siloxane) (PDMS) coating and its substrate affects the rate of PDMS crosslinking reactions. Reactions between vinyl (? CH?CH₂) end groups on PDMS and silyl (SiH) groups in a crosslinker (hydrosilylation) and between SiH groups and silanol (SiOH) groups, during the so‐called postcure crosslinking stage, have been probed in situ. The overall consumption of SiH follows first‐order reaction kinetics. The first‐order reaction coefficient (k₁) for the hydrosilylation crosslinking reaction is the same for coatings on three different substrates: native oxide on silicon (SiO₂/Si), polystyrene (PS), and poly(ethylene terephthalate). For the slower postcure reactions, however, the rate of SiH consumption depends on the substrate. In 2.5‐μm PDMS coatings on PS, k₁ is about seven times greater than k₁ in the same coating on SiO₂/Si. In PDMS coatings on a PDMS substrate, when the effect of the interface is thus minimal, k₁ is 16 times higher than on SiO₂/Si. The dependence of k₁ on the type of interface is probably the result of the interfacial segregation and complexation of the Pt catalyst for the postcure reactions. We propose that polar surfaces more strongly attract Pt and form complexes that inhibit the postcure reactions. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 1421–1431, 2004