应用XRF与ICP-MS研究陨石样品的元素分布

分别采用X射线荧光光谱无标样全定量分析法(XRF)和微波消解/电感耦合等离子体质谱法(ICP-MS)对铁陨石和石陨石样品进行了元素分析。XRF法检测陨石样品中的常量元素,ICP-MS检测陨石中的微量元素。实验结果表明：XRF法可以检测出陨石样品中含量在10 μg·g-1以上的所有金属和非金属元素,得出两类陨石中共同含有的6种常量元素是Fe,Mg,Si,Na,Al和Ca。不同地区的铁陨石中均含有大量的Fe,石陨石中含有大量的Si。ICP-MS法检测陨石中的24种元素,选出共同存在的9种元素V,Ni,Mo,Ag,Sn,La,Gd,Hg和Pb进行对比分析,得出铁陨石中的重金属元素和稀土元素的含量远高于石陨石。所有的铁陨石样品中Sn元素的含量大约是石陨石的10～25倍,铁陨石中稀土元素La和Gd的含量大约是石陨石的6倍,新疆的5A号和6A号铁陨石中Pb的含量比来自山东的铁陨石(1A, 2A, 3A, 4A)多5～13倍,来自内蒙古的石陨石(9B,10B)比来自新疆的石陨石(7B,8B)多了三种元素La,Mo和Gd。     

溶胶-凝胶法制备ZnO纳米薄膜的工艺和应用

ZnO是一种重要的功能材料和新型的Ⅱ-Ⅵ族宽禁带半导体材料.采用溶胶-凝胶(Sol-gel)工艺在Si(100)、Si(111)和c面蓝宝石衬底上成功制备出高质量的ZnO纳米薄膜,并用XRD、SEM、AFM等方法研究了薄膜的特性.首次以制备的ZnO纳米薄膜为缓冲层,在n型Si(100)衬底上采用低压化学气相沉积(LPCVD)工艺外延生长了SiC薄膜,得到了低载流子浓度、高电子迁移率和高空穴迁移率的两种SiC薄膜样品,分析了该薄膜的性能.     

He,Au离子辐照AuCu_3致元素表面偏析

采用磁控溅射方法在单晶硅(111)衬底上制备了AuCu_3薄膜,用2 MeV He离子和1 MeV Au离子对薄膜进行辐照,用卢瑟福背散射对He,Au离子辐照前后AuCu_3薄膜近表面的成分变化进行了分析,对不同离子辐照导致的表面元素偏析行为进行了研究.结果表明:当2 MeV He离子辐照时,随着辐照剂量增大,观察到样品近表面Au元素偏析的趋势;当1 MeV Au离子辐照时,随着辐照剂量增大,观察到样品近表面Cu元素偏析的趋势,与He离子辐照相反.通过对He,Au离子在样品中产生的靶原子空位及其分布分析,发现靶原子空位浓度分布的梯度是导致两种不同表面元素偏析趋势的原因,空位扩散是其中的主要机理.     

PbSe/TiO2同轴异质结纳米管的制备及光催化性能

通过溶液法合成了PbSe/TiO2复合纳米管,并对其进行了微观形貌、晶体结构等的表征。结果表明,制得的样品是由PbSe和TiO2两种材料构成的复合材料,致密、均匀的TiO2薄膜包覆在PbSe纳米管表面。以氙灯为模拟光源,通过对甲基橙的降解研究了PbSe/TiO2复合纳米管的光催化性能。结果显示,PbSe与TiO2之间形成的异质结使PbSe/TiO2复合纳米管具有较高的光催化性能,比纯PbSe纳米管的催化降解率提高了约4.5倍。另外,对PbSe/TiO2复合纳米管光催化稳定性也进行了研究。     

纳米Cu_2O薄膜的制备及其表面增强拉曼光谱EI北大核心CSCD

采用真空电子束蒸发技术及后续热氧化技术,在玻璃基底上制备了不同厚度的金属铜薄膜。采用X射线衍射、X射线光电子能谱分别表征了所制备的金属铜薄膜的晶体结构和元素组成。采用紫外-可见-近红外分光光度计及拉曼光谱仪分别分析了所制备的金属铜薄膜的吸收谱和表面增强拉曼光谱(SERS)活性。随着膜厚的增加,退火后的薄膜样品由非晶态转变为(111)面择优生长的多晶态,且其吸收边发生红移。当退火温度为200℃、退火时间为60min时,能够获得单一相的纳米氧化亚铜(Cu_2O)薄膜。薄膜样品SERS活性随纳米Cu_2O薄膜吸光度的增大而增强。     

Ti1－xCoxO2铁磁性半导体薄膜研究

利用射频磁控反应溅射制备了Ti1-xCoxO2薄膜样品.超导量子干涉仪(SQUID)测量了样品在常温，低温下的磁特性.结果显示样品在常温下已经具有明显的铁磁性.常温时其矫顽力32×103A/m,饱和磁化强度55emu／cm3磁性元素的磁矩达0679μB／Co.饱和场12×104A/m.x射线衍射(XRD)和x射线光电子能谱(XPS)实验分析初步表明样品中没有钴颗粒. 关键词： 铁磁半导体 TiO2 薄膜     

纳米Cu_2O薄膜的制备及其表面增强拉曼光谱

采用真空电子束蒸发技术及后续热氧化技术,在玻璃基底上制备了不同厚度的金属铜薄膜。采用X射线衍射、X射线光电子能谱分别表征了所制备的金属铜薄膜的晶体结构和元素组成。采用紫外-可见-近红外分光光度计及拉曼光谱仪分别分析了所制备的金属铜薄膜的吸收谱和表面增强拉曼光谱(SERS)活性。随着膜厚的增加,退火后的薄膜样品由非晶态转变为(111)面择优生长的多晶态,且其吸收边发生红移。当退火温度为200℃、退火时间为60min时,能够获得单一相的纳米氧化亚铜(Cu_2O)薄膜。薄膜样品SERS活性随纳米Cu_2O薄膜吸光度的增大而增强。     

化学水浴法和磁控溅射法制备硫化镉薄膜的性能研究

以氯化铵、氯化镉、氢氧化钾和硫脲为反应物采用化学水浴法制备了硫化镉薄膜,为了作对比研究,采用射频磁控溅射以硫化镉为靶材,氩气为溅射气体,制备了硫化镉薄膜。采用X射线衍射、扫描电子显微镜和紫外-可见光光谱仪分别表征了硫化镉薄膜的结构、形貌和光学吸收特性。结果表明,采用以上两种方法制备的硫化镉均具有(002)择优取向,溅射法制备的硫化镉薄膜较致密,薄膜表面较光滑,平均晶粒尺寸在20～30nm;水浴法制备的硫化镉薄膜颗粒尺寸较小,缺陷较多。除了在短波段溅射所得硫化镉薄膜的透过率略差于水浴法所得硫化镉薄膜之外,溅射法制备的硫化镉薄膜的性能整体上优于水浴法制备的薄膜。两种方法制备的硫化镉薄膜的能隙在2.3～2.5eV。     

透射光谱法测试双面薄膜的光学参数

由于普通的化学气相沉积法制作高掺Sn的二氧化硅薄膜比较容易产生结晶,而溶胶-凝胶法制备薄膜化学组成比较容易控制,可以制作出掺Sn浓度较大的材料。文章采用了溶胶-凝胶的方法制备出了66 mol%和75 mol%两种不同浓度的掺Sn的SiO₂薄膜,用浸渍法多次提拉薄膜以增加薄膜的厚度,之后用紫外-可见分光光度计测量了薄膜的透射光谱。之前基于透射光谱的方法计算玻璃基底上薄膜的光学参数都是针对单面薄膜,该文针对浸渍法产生的双面薄膜,建立了相对应的薄膜模型,并分别用包络线法计算出了两种不同薄膜样品的光学参数。计算结果表明两种不同薄膜样品的折射率随着波长的增加而增加,薄膜的厚度都为900 nm左右。     

样品厚度对薄膜法X射线荧光光谱测量的影响研究

分别以富集有Cr,Pb和Cd三种元素的尼龙薄膜样品及玻璃纤维滤膜为研究对象,采用滤膜叠加的方式,通过XRF光谱仪测量不同样品厚度下薄膜样品的XRF光谱,根据测得的尼龙薄膜样品中Cr,Pb,Cd元素及玻璃纤维滤膜中Ca,As和Sr元素特征XRF性质的变化,研究样品厚度对薄膜法XRF光谱测量的影响。结果表明：薄膜样品厚度对不同能量区间上元素特征谱线荧光性质的影响并不相同。元素特征谱线能量越大,元素特征X射线荧光穿透滤膜到达探测器的过程中损失越少;但由薄膜样品厚度增加引起的基体效应却越强,相应特征谱线位置处的背景荧光强度就越大,因此样品厚度增加所引起的基体效应对薄膜法XRF光谱测量的灵敏度影响就越大。对于特征谱线能量较低(能量小于7 keV)的元素,以增加薄膜样品厚度的方式来增加待测组分的质量厚度浓度,并不能有效地提高薄膜法XRF光谱测量的灵敏度;对于特征谱线能量较高的元素(能量＞7 keV),可以通过适当增加样品厚度以增加被测组分的质量厚度浓度的方式来提高XRF光谱测量的灵敏度,薄膜样品厚度在0.96～2.24 mm内,更有利于XRF光谱的测量与分析。该研究为大气及水体重金属薄膜法XRF光谱分析中薄样制备及富集技术提供了重要的理论依据。     

Effects of interface between SnO2 thin film and Si substrate on growth time

SnO₂ thin film was grown on Si substrate using the low pressure chemical vapor deposition (LPCVD) method. The SnO₂ thin film was grown in the direction of (110) as deposition time increased. The atomic ratio of O decreased by 62.4, 57.6, and 45.6%, and the thickness of the thin film increased to 0.2, 0.3, and 0.7 ? as the deposition time increased to 10, 20, and 30 min, respectively. The interface of the thin film was examined using high-resolution transmission electron microscope (HRTEM) and energy dispersive spectroscopy (EDS) analysis. The SiO₂ layer was observed at between the SnO₂ thin film and the Si substrate. This layer decreased in thickness as the deposition time increased, which indicates that the deposition time affected the interface of the thin film.     

A hybrid aerodynamic and electrostatic atomization system for enhanced uniformity of thin film

Droplet deposition processes by the mechanisms of either aerodynamics or electrostatic spray have been widely studied in various applications such as aerosol generators, thin film coatings, and nanoparticle formations. Among the current state-of-art methodologies, air spray deposition can produce small-sized droplets without fine control on their sizes and uniformity in deposited thin films. Conventional electrospray depositions, on the other hand, can fabricate thin films with good uniform with a relatively slow deposition speed. In this paper, a hybrid mechanism by means of aerodynamic and electrostatic deposition is investigated and demonstrated to allow high throughput and improved uniformity for thin film depositions. It utilizes both the electrostatic force and aerodynamic force to atomize the liquid and control the droplet spraying process with good stability/repeatability. A uniform thin TiO₂ film has been deposited as the demonstration example using this method. The velocities and trajectories of droplets during the deposition process have been characterized under different experimental parameters by using the technique of particle image velocimetry (PIV). This hybrid thin film fabrication method could be applicable in several industrial processes for better uniformity in making transparent electrodes, solar cells, displays, and automobiles.     

Kinetic model of thin film growth by vapor deposition

A phenomenological kinetic model is proposed for describing the production of a thin film containing two components, A and B, by chemical and physical vapor deposition. The film was created by the “site-to-site” deposition of components A and B. The equations for the densities of components A and B in the surface layers were formed, and analytical and numerical solutions were obtained. The model includes the probabilities of different elementary processes for the interaction of gas phase components (molecules, radicals, atoms and ions) with those of A and B on the film surface. The deposition and erosion rates, the surface and volume densities of components A and B and the relative volume of micro-cavities inside the film were calculated as a function of the probabilities for the elementary processes of gas (plasma)-surface interactions. The experimental characteristics of a-Si: H thin films prepared by SiH₄ plasma deposition and those of carbon nitride thin films deposited from r.f. — magnetron sputtering and ion beam-assisted processes are compared with model calculations.     

Deposition of antibacterial of poly(1,3-bis-(p-carboxyphenoxy propane)-co-(sebacic anhydride)) 20:80/gentamicin sulfate composite coatings by MAPLE

We report on thin film deposition of poly(1,3-bis-(p-carboxyphenoxy propane)-co-sebacic anhydride)) 20:80 thin films containing several gentamicin concentrations by matrix assisted pulsed laser evaporation (MAPLE). A pulsed KrF* excimer laser was used to deposit the polymer-drug composite thin films. Release of gentamicin from these MAPLE-deposited polymer conjugate structures was assessed. Fourier transform infrared spectroscopy was used to demonstrate that the functional groups of the MAPLE-transferred materials were not changed by the deposition process nor were new functional groups formed. Scanning electron microscopy confirmed that MAPLE may be used to fabricate thin films of good morphological quality. The activity of gentamicin-doped films against Escherichia coli and Staphylococcus aureus bacteria was demonstrated using disk diffusion and antibacterial drop test. Our studies indicate that deposition of polymer-drug composite thin films prepared by MAPLE is a suitable technique for performing controlled drug delivery. Antimicrobial thin film coatings have several medical applications, including use for indwelling catheters and implanted medical devices.     

The effect of diffusion and overhangs/vacancies on the microstructure of zig-zag thin film

Basing on some growth models of thin film, we have investigated the growth mechanism of glancing angle deposition (GLAD) film. The simulation verifies that the overhangs/vacancies also contribute to the columnar growth as well as the self-shadowing effect for GLAD thin film. Besides, we have studied the effect of the deposition rate, surface and bulk diffusions on the microstructure of thin film using the time-dependent Monte Carlo method. The results show that the surface and bulk diffusions can significantly enhance the packing density of thin film in GLAD growth, and the increase of the deposition rate induce the moderate decrease of the packing density.     

Structure and microtribological characteristics of laser-arc deposited TiB2 thin film

TiB2 thin film was deposited by laser-arc deposition method on the surface of single crystalline silicon. The morphology, composition, structure and microtribological properties of the film were studied by using XPS, XRD and atomic force/friction force microscope (AFM/FFM). The results show that TiB2 (100) preferred growth on the Si(100)substrate, TiB2(001) preferred growth on the Si(111) substrate. The TiB2 thin film was composed of TiB2 and a small amount of TiO2. The friction coefficient of TiB2 film on substrates Si (100) and Si(111) in microtribological process were 0.087 and 0.073,respectively. TiB2 thin film displayed distinct ability of anti-scratch and wear-resistance.     

基于机群系统的薄膜淀积并行计算

基于集群并行系统,实现了运用蒙特卡罗方法模拟100×100×100个原子Si衬底Al薄膜淀积过程的并行计算.采用了重叠的区域分解法和异步通信的有效并行计算策略,将区域的合理划分与薄膜淀积的空间填补的拓扑几何机理结合起来,着重减少通信耗费,提高算法的并行性能,大量地缩短了薄膜淀积模拟计算时间,从而为运用计算机方法模拟薄膜淀积、完成薄膜材料淀积的预测提供了更高效的手段.     

Comparison of ZnO thin films grown on a polycrystalline 3C-SiC buffer layer by RF magnetron sputtering and a sol-gel method

Zinc oxide (ZnO) thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer using RF magnetron sputtering and a sol-gel method. The post-deposition annealing was performed on ZnO thin films prepared using both methods. The formation of ZnO piezoelectric thin films with less residual stress was due to a close lattice mismatch of the ZnO and SiC layers as obtained by the sputtering method. Nanocrystalline, porous ZnO film prepared using the sol-gel method showed strong ultraviolet UV emission at a wavelength of 380 nm. The 3C-SiC buffer layer improved the optical and piezoelectric properties of the ZnO film produced by the two deposition methods. Moreover, the different structures of the ZnO films on the 3C-SiC intermediate layer caused by the different deposition techniques were also considered and discussed.     

Structure and microtribological characteristics of laser-arc deposited TiB2 thin film

TiB2 thin film was deposited by laser-arc deposition method on the surface of single crystalline silicon. The morphology, composition, structure and microtribological properties of the film were studied by using XPS, XRD and atomic force/friction force microscope (AFM/FFM). The results show that TiB2 (100) preferred growth on the Si(100) substrate, TiB2(001) preferred growth on the Si(111) substrate. The TiB2 thin film was composed of TiB2 and a small amount of TiO2. The friction coefficient of TiB2 film on substrates Si (100) and Si(111) in microtribological process were 0.087 and 0.073, respectively. TiB2 thin film displayed distinct ability of anti-scratch and wear-resistance.     

掺溴非晶碳梯度薄膜的制备与分析

 采用低压等离子增强化学气相沉积法用溴乙烷、氢气制备了掺溴的非晶碳梯度薄膜。通过样品的XPS能谱分析研究了薄膜沉积速率与氢气流量、溴元素原子分数与溴乙烷流量以及溴元素原子分数与刻蚀时间之间的关系,得出了溴乙烷流量、刻蚀时间对薄膜的主要键态含量、C元素sp²/sp³键态杂化比和薄膜硬度的影响。结果表明：薄膜沉积速率随氢气流量的增加而线性减小,溴元素含量随溴乙烷流量的增加先增加后降低,刻蚀时间越长,溴乙烷流量越小,薄膜越硬