Sm富勒烯的价带光电子能谱

用紫外光电子能谱和同步辐射光电子能谱研究了Sm掺杂C₆₀薄膜的价带电子结构.Sm的价电子大部分转移给C₆₀，化学键以离子性为主.对于任何化学配比都没有观察到费米边，所以Sm富勒烯超导相在室温下为半导体性质.获得了很接近单相Sm_2.75C₆₀的样品在费米能级附近的电子态密度分布.固溶相的光电子发射与Sm_2.75C₆₀有明显区别.Sm_xC_{60关键词： 60}的Sm填隙化合物')" href="#">C₆₀的Sm填隙化合物 价带光电子能谱 电子结构     

Yb2.75C60价带光电子能谱

用角积分紫外光电子能谱技术测量了Yb_2.75C₆₀薄膜的价带电子态密度分布.相纯Yb_2.75C₆₀样品通过C1s芯态x射线电子谱峰的位移表征.结果表明Yb_2.75C₆₀是半导体，在费米能级处几乎没有电子态分布.Yb 6s电子态和C₆₀LUMO能带的杂化效应不可忽略，有部分Yb 6s电子分布在Yb-C₆₀杂化能带上. 关键词： 2.75C₆₀')" href="#">Yb_2.75C₆₀ 电子能谱 电子态密度     

Al0.22Ga0.78N/GaN二维电子气中的弱局域和反弱局域效应

通过磁输运测量研究了Al_0.22Ga_0.78N/GaN二维电子气的电子相干散射中的弱局域和反弱局域化现象.在外加弱磁场的情况下，该系统表现出正-负磁阻的变化，说明在Al_0.22Ga_0.78N/GaN异质结中存在晶体场引起的电子自旋-轨道散射.同时讨论了二维电子气中不同的散射时间对温度的依赖关系，实验得到的非弹性散射时间与温度成反比，表明非弹性散射机理主要来源于小能量转移的电子-电子散射. 关键词： 二维电子气 弱局域 磁阻     

无序Cu33Y67低温电阻和磁阻中的相互作用和弱定域化

文中报道非晶Cu₃₃Y₆₇低温电阻和磁阻的测量结果。这种合金是在He气氛中以熔化-自旋技术制备的。相互作用效果可以为4.5K以下的低温电阻提供一个-T^1/2形式的贡献。在稍高的温度,其变化规律也可以通过相互作用和弱定域化的联合来解释。上至1.8T的磁阻测量揭示出一个具有自旋-轨道散射较强影响的弱定域化效果。Cu₃₃Y₆₇的磁阻测量值比弱定域化预言的大。如果把弱定域化的理论预言强度增大3倍,则可以在 关键词：     

金属玻璃Zr78Co22中的弱局域化效应

测量了超导金属玻璃Zr₇₈Co₂₂的磁阻和上临界磁场H_c2。磁阻的实验结果定性地与包含自旋-轨道散射的三维弱局域化理论相符,而定量则有明显的偏差,其偏差主要来源于超导涨落效应。在所测量的温区内,上临界磁场H_c2随温度呈线性变化,同时还得出超导金属玻璃Zr₇₈Co₂₂中的非弹性散射主要来源于电子-声子相互作用,其散射几率τ_i^-1=1.3×1O¹⁰T²,略小于Bergmann理论所预言的值。 关键词：     

Sm富勒烯的芯态光电子能谱

用X射线光电子能谱研究了Sm掺杂的固态C₆₀相衍变和芯电子态.在Sm_xC₆₀中Sm的含量x小于0.5时，样品是固溶相；在x=0.5和x=2.75之间的掺杂阶段，样品是这两个相的混合.在x=2.75和x=6之间的高掺杂阶段未观察到相分离的X射线光电子能谱证据.Sm 4f, 4d的实验数据表明Sm的价态是+2.二价Sm 3d_5/2芯态谱线存在两个子峰. 关键词： 60的Sm填隙化合物')" href="#">C₆₀的Sm填隙化合物 相结构 电子态 X射线光电子能谱     

La掺杂BaSnO3薄膜的低温电输运性质

利用射频磁控溅射技术在MgO(001)单晶基片上沉积了一系列Ba_0.94La_0.06SnO₃薄膜,并对薄膜的结构和电输运性质进行了系统研究.所有薄膜均表现出简并半导体(金属)导电特性:在T>T_min的高温区(T_min为电阻最小值对应的温度),薄膜的电阻率随温度的升高而升高,并且与温度的平方呈线性关系.在T min的低温区域,薄膜的电阻率随温度降低而上升,并且电阻率随lnT呈线性变化,均匀无序系统中的电子-电子相互作用、弱局域效应以及Kondo效应均不能解释这种现象.经过定量分析,发现电阻率在低温下lnT的依赖关系源于颗粒间电子的库仑相互作用.同时,在Ba_0.94La_0.06SnO₃薄膜中也观察到霍尔系数R_H与lnT呈线性关系,并且该线性关系也定量的符合金属颗粒体系中库仑相互作用的理论.薄膜断面高分辨透射电子显微镜结果表明,虽然薄膜整体呈现外延结构,但其中...     

分子结点电子输运性质的理论研究

采用基于密度泛函理论的非平衡态格林函数方法,研究了Pt-H₂微结点在平衡态和低偏压下的电子输运行为,考察了电极-分子耦合形貌对结点输运性质的影响,并采用费曼路径概念从结点局域轨道出发分析了其输运特性. 发现H₂分子的反键轨道可以参与结点的低偏压电子输运,偏压可以通过改变系统局域分子轨道来影响其输运性质. 关键词： 分子结点 电子输运 非平衡态格林函数方法 透射谱     

C40富勒烯分子的电子结构与传输特性研究

本文采用密度泛涵理论对富勒烯C₄₀分子进行了结构优化,得到了稳定构型,然后构建了以金原子面为电极的电子输运模型.使用非平衡格林函数方法对构建的电子输运模型进行了电子输运性质的计算,得到了电子透射谱和伏安曲线,并分析了分子器件产生电子输运性质的原因.研究结果发现:C₄₀富勒烯的化学活性明显强于富勒烯C₆₀和C₃₂分子,在一些分子能级处,该分子为一个良导体.     

Heusler合金Cu2VAl磁性及输运性质的研究

对Heusler 合金Cu₂VAl多晶甩带样品进行了磁性与输运性质方面的研究. 实验 发现Cu₂VAl在温度T为210K附近发生铁磁—顺磁相变，为弱铁磁体. 输运性质的 测量表 明在72K时电阻因局域杂质超导相变而发生突变，电子和声子之间的散射是主要的散射机 理. 居里温度T_C以下存在侧跃导致的反常霍尔效应，并且7K附近的相变导致霍 尔电阻率发生异常. 关键词： 磁性 输运 2VAl')" href="#">Cu₂VAl     

Raman spectra of samarium-fullerene intercalation compounds

Samarium-fullerene intercalation compounds of nominal composition Sm_xC₆₀ (x=1,2,…,6) have been synthesized by a solid-state reaction method. We obtain a Sm_2.75C₆₀ superconducting phase with orthogonal structure and a Sm₆C₆₀ phase with body-centered cubic structure. The broadening and weakening of Raman peaks of the Sm_xC₆₀ compounds are due to the distortion of C₆₀ and electron-phonon interaction. The Raman measurements reveal that the distortion of C₆₀ decrease in Sm_xC₆₀ (x=3,4,5) exposed to air, although the fulleride solids have transformed into an amorphous state. The Raman results also show that the distortion of C₆₀ is still very large in the Sm₆C₆₀ exposed to air, or the C₆₀ molecules have been destroyed and become some amorphous carbide.     

Double metal-insulator peaks and effect of Sm substitution on magnetic and transport properties of hole-doped La0.85Ag0.15MnO3

La_0.85−xSm_xAg_0.15MnO₃ (x=0−0.2) ceramics were prepared using the conventional solid-state synthesis method to investigate the effect of Sm³⁺ substitution on magnetic and electrical transport properties. Magnetic susceptibility versus temperature measurements showed all samples exhibit ferromagnetic to paramagnetic transition with Curie temperature, T_c decreasing from 283 K (x=0) to 164 K (x=0.2) with increasing Sm³⁺. The observed slope in susceptibility, χ′ versus temperature curves below T_c indicates the possible presence of FM and AFM phases in the metallic region. In addition, a deviation from the Curie-Weiss law above T_c in 1/χ′ versus T curves indicates the existence of a Griffith's phase in the x=0.05−0.2 samples due to the Sm³⁺ ion substitution. The Griffith temperature, T_G was found to decrease from 295 K (x=0.05) to 229 K (x=0.2). Electrical resistivity measurements of the samples in zero field showed transition from metallic behavior to insulating behavior as the temperature was increased. For x=0, two metal-insulator, MI transition peaks were observed at T_p1=282 K and at T_p2=250 K. Both peaks shifted to lower temperatures with the increase in Sm³⁺. The relative resistivity of the first peak to the second peak decreases with increasing Sm³⁺ for x>0.05 while at x=0.2 the T_p1 peak was strongly suppressed. Magnetoresistance, MR was observed to weaken with Sm³⁺ substitution. The metallic region of the ρ(T) curve of the x=0−0.15 samples was fitted to the model of electron-electron and electron-magnon scattering while the insulating region was fitted to the variable range hopping, VRH model. The resistivity behavior indicated that the substitution of Sm³⁺ weakened the double exchange process and enhanced the Jahn-Teller effect. Our results indicated that the T_p1 peak is strongly related to the double-exchange mechanism while the T_p2 peak is suggested to originate from magnetic inhomogeneity.     

Theoretical investigation of antiferroelectric (SmCA) subphases by hydrodynamical approach

We provide a hydrodynamical approach utilizing time dependent Landau-Ginzburg model (L-G) and the Cahn-Hilliard model (C-H) to investigate antiferroelectric liquid crystals (AFLCs) exhibiting different chiral phases between paraelectric smectic A (SmA^?) phase and antiferroelectric smectic C_A^? phase (SmC_A^?). Introducing conserved and non-conserved order parameters in C-H and L-G models, we have predicted the appearance of a chiral smectic C (SmC^?) phase and a ferrielectric SmC_FI1^? phase (three layers SmC_A^?) in an antiferroelectric phase sequence. The three layers periodicity for SmC_FI1^? phase is studied in detail with a non-uniform layer interactions among smectic layers with strong experimental support. Finally, we provide some theoretical basis for the non-uniformity of our proposed layer interactions.     

Low temperature electrical transport in Ag substituted LaMnO3 polycrystalline pellets prepared by a pyrophoric method

A detailed investigation of the electrical resistivity of a series of monovalent (Ag) doped polycrystalline La_1−xAg_xMnO₃ pellets with x ranging from 0.05 to 0.30 and measured over the temperature range between 10 and 350 K is reported. La_1−xAg_xMnO₃ compounds have been prepared by a novel pyrophoric technique. XRD analysis of our samples indicates single phasic nature for samples with Ag content ≤0.15, while samples with higher Ag content (x≥0.2) show presence of both magnetic perovskite and non-magnetic Ag phases. A sharp insulator-metal transition with T_MI close to room temperature arising out of the paramagnetic to ferromagnetic transition, and a large magneto-resistance (MR=∼16%) near T_MI has been observed for all the Ag doped samples. Between T_C(T_p1) and 350 K, all the samples show activated conduction following the Emin-Holstein theory of adiabatic small polaron hopping, while at lower temperatures, in the ferromagnetic regime resistivity appears to be governed by various electron scattering processes. Between 20 and 50 K, a distinct minimum for both H=0 and has been observed, which is explained in terms of inelastic scattering and electron-electron interactions.     

Electrical and magnetic properties of non-stoichiometric (La0.8Sr0.2)1−xMnO3 perovskites

The structure, transport and magnetic properties of (La_0.8Sr_0.2)_1−xMnO₃ (0≤x≤0.30) polycrystalline perovskite manganites have been investigated. For all the samples the Curie temperatures, T_c, remain nearly unchanged (329±3 K). Resistivity versus temperature curves for the samples show a double-peak behavior. A significant magnetoresistance (MR) effect and different temperature dependences of the MR ratios of the samples are observed. The shapes of the MR-T curves of the samples can be adjusted by changing x. For the x=0.30 sample, a nearly constant MR ratio of (9.5±0.5)% is obtained over the temperature range from 205 to 328 K.     

Influence of Pr-doping on structural, electronic transport, magnetic properties of perovskite molybdates Sr1−xPrxMoO3 (0≤x≤0.15)

The effect of Pr-doping on structural, electronic transport, magnetic properties in perovskite molybdates Sr_1−xPr_xMoO₃ (0≤x≤0.15) has been investigated. The Pr-doping at Sr-site does not change the space group of the samples, but decreases the lattice parameter a. The magnitude of resistivity ρ increases initially (x≤0.08) and then decreases with further increasing Pr-doping level x and ρ(T) behaves as T² and T dependence in the low-temperature range blow T* and high-temperature range of 150 K<T<350 K, related to the electron-electron (e-e) and electron-phonon (e-ph) scattering, respectively. The magnetic susceptibility χ value of the sample increases with increasing x and the χ(T) curve for all samples can be well described by the model of exchange-enhanced paramagnetism. The specific heat magnitude in the low-temperature region increases with increasing Pr-doping level. The specific heat value agrees with the classical Dulong-Petit phonon specific heat, C_cl=3k_BrN_A=124.7 J/mol K in the high-temperature region and the temperature dependence of the specific heat can be well described by the formula C_p(T)/T=γ_e+β_pT² in the low-temperature range. These behaviors can be explained by the competition between the increase in the density of state (DOS) at Fermi energy level and the disorder effect due to Pr-doping.     

Large enhancement of room temperature magnetoresistance in Ag-added La0.67(Ca0.65Ba0.35)0.33MnO3

The electrical and magnetoresistant properties of La_0.67(Ca_0.65Ba_0.35)_0.33MnO₃/Ag_x (abbreviated by LCBMO/Ag_x) have been studied. The results show that Ag addition causes a decrease of resistivity dramatically and especially induces a large enhancement of room temperature magnetoresistance (MR). The room temperature MR ratio for x=0.27 sample in 10 kOe magnetic field is 41%, almost 20 times larger than that for x=0 sample. This enhancement is related to that the Curie temperature (T_c) of the sample is near room temperature, as well as the significant reduction of resistivity. The good fits of experimental results for x=0.27 sample to Brillouin function indicate that the MR behavior in the Ag added LCBMO is induced by the spin-dependent hopping of the electrons between the spin clusters, which is an intrinsic property of the CMR materials.