温度对半花菁LB多层膜的光致荧光特性的影响

利用稳态荧光谱和时间分辨荧光技术研究了温度对半花菁Langmuir-Blodgett(LB)多层膜光致荧光特性的影响.半花菁分子在半花菁/花生酸、半花菁/花生酸镉交替及纯半花菁Z-型LB多层膜中均形成了H-聚集体,加热能使聚集体部分离解.由于Z-型膜中没有花生酸或花生酸镉的屏蔽,分子间具有较强的偶极相互作用,加热使聚集体的离解的程度较小.镉离子的加入对半花菁LB多层膜的稳态荧光谱也有一定的影响.     

掺半花菁二氧化硅薄膜光学二次谐波产生

报道了用溶胶 凝胶技术制备掺入半花菁染料的二氧化硅薄膜．在不加电场极化条件下，由半花菁分子的自取向导致光学二次谐波产生，定量测得厚度为50nm薄膜的二阶非线性系数χ^（2）为6.6pm/V，并初步研究了半花菁分子自取向的机理 关键词：     

LB膜中聚集体的类型及其荧光特性研究

采用稳态和时间分辨芝光研究了不同类型的ＬＢ多层膜中分子聚集特性。在半花菁／花生酸交替膜中,花生酸层的隔离使得半花菁分子之间的相互作用主要发生在同一层中,形成Ｈ形成Ｈ聚集体,荧光光谱蓝移;在纯半花菁Ｙ型和Ｚ型膜中,较强的层间相互作用使分子形成Ｊ聚集体,导致荧光光谱发生显著红移。     

LB膜中混合聚集体的光致荧光特性研究

研究了不同活性分子（半花菁和氐盐）混合聚集体的形成以及紫外光照射对ＬＢ交替多层膜光致荧光（ＰＬ）特性的影响。在半花菁和氐盐混合的ＬＢ膜中,由于不同分子间较强的相互作用使混合膜的荧光光谱较纯半花菁和氐盐分子膜分别发生了蓝移和红移。利用紫外光照射可以使分子的聚集体部分分解甚至破坏分子的结构,导致光致荧光强度明显减弱。     

半花菁分子激发态的动力学特性研究

本文利用不同波段的时间分辨荧光和三维荧光谱对半花菁分子激发态的动力学特性进行了研究。在半花菁／花生酸交替的Y型多层膜中,半花菁分子形成的H－聚集体引起其三维荧光谱蓝移,并且荧光峰随时间的变化逐渐向红光方向移动。由于聚集体内所有分子间的相互作用（耦合）相干叠加,使得LB膜中的半花菁分子的激发态寿命比溶液寿命要短,由激发态较高振动能级向低能级过渡较快,因而不同波段的起始发光时间相差也较小。     

Langmuir-Blodgett 膜中分子聚集行为的偶极作用模型

基于经典静电场理论，描述了Langmuir-Blodgett (LB)膜中棒状分子聚集行为的偶极作用模型，给出了LB膜结构与光谱性质的关系. 讨论了X型或Z型膜中分子间距、层间距、分子取向、膜层数等结构参数对分子聚集行为的影响. 理论结果与实验值符合较好. 关键词： Langmuir-Blodgett膜 聚集体 偶极相互作用 半花菁     

LB膜的制膜条件优化及其对光学性能的影响

通过紫外-可见吸收光谱、二次谐波振荡和稳态荧光的测量,研究了半花菁(DAEP)Langmuir-Blodgett(LB)膜在不同制膜条件(压膜速度、半花菁和花生酸混合、亚相中加入碘离子)下,LB膜样品中半花菁分子的聚集体性质的改变和对非线性光学性能的影响.实验发现,纯半花菁LB膜中分子形成H-聚集体,从而导致吸收峰、荧光峰的蓝移和分子二阶非线性极化率β的减少.分子聚集程度的减少和分子二阶非线性系数β的增加可以通过增大压膜速度、半花菁和花生酸混合、亚相中加入碘离子等方法实现.     

有序组装超薄膜热释电性能的优化研究

报道两亲性染料半花菁(DAEP)与隔层材料氮冠醚(NC)交替LB膜的热释电效应以及掺杂金属离子（Ba2+）对LB膜热释电性能的影响.发现所测样品的热释电系数p高达58μCm-2K-1；在频率为1kHz—100kHz的范围内，其εr和tanδ的数值分别为2.34—1.96和0.08—0.04.并讨论了不同成膜方式和掺杂金属离子Ba2+对LB膜热释电性能影响的物理机理.     

直流电场诱导LB膜中分子重新取向研究

用旋转二次谐波产生方法研究了半花菁/花生酸Y型交替LB多层膜中由外加法向直流电场诱导的分子的重新取向.外加法向直流电场能够有效地改变LB膜中光学活性半花菁分子的取向,迫使其长轴转向电场的方向.随着极化电场的增大,分子在基板平面内的各向异性逐渐减小,而二次谐波强度的增量则随外加电场的增大而呈现平方增长的规律.在室温下,用1.3×10⁶V/m的电场极化10min,可以使半花菁LB多层膜的二次谐波强度增大一个量级.     

半花菁LB多层膜的光致各向异性研究

用光学线性和非线性方法研究了Ｙ型半花菁／花生酸交替ＬＢ多层膜的光致光学各向异性。在纳秒紫外偏振脉冲激光照射下，ＬＢ多层膜中半花菁分子发色团长轴向紫外光偏振方向重新取向。加热可以使ＬＢ多层膜平面内各向异性消失及Ｈ－聚集体分解。     

(111)取向(Pb,La)TiO3铁电薄膜中90°纳米带状畴与热释电性能的研究

采用射频磁控溅射技术在Pt/Ti/SiO₂/Si(100)衬底上生长了掺镧钛酸铅(PLT)铁电薄膜.用X射线衍射技术(XRD)研究了PLT薄膜结晶性能，结果表明PLT薄膜为 (111)择优取向钙钛矿相织构.使用原子力显微镜(AFM)和压电响应力显微镜(PFM) 分别观察了PLT薄膜的表面形貌和对应区域的电畴结构.PFM观察显示PLT薄膜中存在90°纳米带状畴，电畴的极化为首尾相接的低能量的排列方式，带状畴的宽度为20—60nm.研究了PLT10铁电薄膜的制备条件与性能之间的关系.发现在优化条件下制备的PLT10铁电薄膜的介电常数ε_r为365、介电损耗tgδ为0.02，热释电系数γ为2.18×10^-8C·(cm²·K)^-1，可以满足制备非制冷红外探测器的需要. 关键词： PLT薄膜 电畴 PFM 极化     

铌酸锶钠锂单晶电光、热电、介电和压电性能

文本研究了用提拉法生长的铌酸锶钠锂(Sr₄NaLiNb₁₀O₃₀)晶体的电光、热电、介电和压电性能。其半波电压与温度的关系与晶体中锂含量密切相关。测得其室温下的热电系数与Ba～0.5的Sr_1-xBa_xNb₂O₆晶体相当,～7×10^-8C/cm²·K。已极化的晶体几乎检测不到退极化现象。将其作成热电器件,其探测度D^*不小于1.7×10⁷Hz^1/2·cm/W。文中还描述了其介电和某些压电性能。 关键词：     

Sol-gel-derived pyroelectric barium strontium titanate thin films for infrared detector applications

Quality pyroelectric Ba_0.8Sr_0.2TiO₃ films have been successfully fabricated by a sol-gel processing using a highly diluted precursor solution. The remnant polarization of the films decreases with the temperature increasing, which results in a large pyroelectric coefficient at room temperature. Infrared response measured using a 500-K chopped blackbody at room temperature exhibits a typical pyroelectric response waveform. Frequency dependence of the infrared response measurement for a pixel with area of 2.5×10^-3 cm² showed that the maximum response output voltage of 3.2 mV was obtained at 6 Hz. Better infrared response can be expected by the improvement in thermal isolation of the pixels and electrode materials. Received: 26 April 2000 / Accepted: 9 May 2000 / Published online: 9 August 2000     

Pyroelectric properties of CaCu3Ti4O12 thin films grown by pulsed laser deposition

A pyroelectric behavior was observed in CaCu₃Ti₄O₁₂ films and the pyroelectric coefficient was measured to be 1.35×10^?7 C/cm²?K for a film with thickness of 700 nm from 295 K to 340 K, larger than those of most pyroelectric materials. It was observed that the pyroelectric coefficient increased with the thickness of films from 300 to 700 nm. The origin of pyroelectric effect is proposed to depend on the distortion of the Ti–O octahedron due to the presence of Ti³⁺ ions. Comparing with the measurement result of an unpolarized film, our study strongly supports the interpretation of relaxor ferroelectric behavior in CaCu₃Ti₄O₁₂.     

磷掺杂纳米硅薄膜的研制

用PECVD薄膜沉积方法,成功地制备了磷掺杂纳米硅(nc-Si:H(P))薄膜.用扫描隧道电镜(STM)、Raman散射、傅里叶变换红外吸收(FTIR)谱、电子自旋共振(ESR)、共振核反应(RNR)技术对掺磷纳米硅进行了结构分析,确认了样品的微结构为纳米相结构.掺磷后膜中纳米晶粒的平均尺寸d减小,一般在25—45nm之间,且排列更加有序.掺磷nc-Si:H膜具有较高的光吸收系数,光学带隙在173—178eV之间,和本征nc-Si:H相同.掺杂nc-Si:H薄膜电导率在10^-1关键词：     

Preparation and assessment of piezo- and pyroelectric poly (vinylidene fluoride-hexafluoropropylene) copolymer films

Films of poly(vinylidene fluoride-hexafluoropropylene) copolymer [P(VDF-HFP)] were cast from a dimethylsulfoxide (DMSO)/acetone solution of Solef?85-15 P(VDF-HFP) copolymer powder grade 21508. Undrawn and uniaxially drawn cast copolymer films were investigated with respect to their piezo- and pyroelectric properties. Quasistatic charge integration was employed for the determination of the poling-field dependence of the piezoelectric d₃₁ and pyroelectric p₃ coefficients. In addition, the thermal stability of the pyroelectric effect was studied with a combination of thermally stimulated discharge (TSD) and temperature-modulation techniques. Cast copolymer films could withstand electrical poling fields of up to 400 MV/m. The maximum values of d₃₁=30 pC/N and p₃=49 μC/(m²K) for uniaxially drawn samples are similar to those found on commercial PVDF films and much higher than those on pure PVDF films cast from solution. Samples kept for 5 min at 150 °C still exhibit 30–40% of the initial pyroelectric effect [up to around 20 μC/(m²K)]. After this annealing step, no further decay of the pyroelectric coefficient could be observed during storage at 120 °C for several hours. Received: 5 July 2001 / Accepted: 27 July 2001 / Published online: 2 October 2001     

The improvement of pyroelectric properties of PZT thick films on Si substrate by TiOx barrier layer

The effects of TiO_x diffusion barrier layer thickness on the microstructure and pyroelectric characteristics of PZT thick films were studied in this paper. The TiO_x layer was prepared by thermal oxidation of Ti thin film in air and the PZT thick films were fabricated by electrophoresis deposition method (EPD). To demonstrate the barrier effect of TiO_x layer, the electrode/substrate interface and Si content in PZT thick films were characterized by scanning electron microscope (SEM) and X-ray energy dispersive spectroscopy (EDS), respectively. The TiO_x barrier thickness shows significant influence on the bottom electrode and the pyroelectric performance of the PZT thick films. The average pyroelectric coefficient of PZT films deposited on 400 nm TiO_x layer was about 8.94 × 10⁻⁹ C/(cm² K), which was improved by 70% than those without diffusion barrier layer. The results showed in this study indicate that TiO_x barrier layer has great potential in fabrication of PZT pyroelectric device.     

铁电薄膜底电极对薄膜结构与电性能的影响

研究了电极材料（Ｐｔ／Ｔｉ）对铁电ＰＬＺＴ（７．５／６５／３５）陶瓷薄膜结构和性能的影响．认为在Ｐｔ层厚度一定时，Ｔｉ层的厚度对铁电薄膜的结构和性能有显著影响．当Ｔｉ层过厚或过薄时，铁电薄膜的结构较差；而当Ｔｉ层的厚度适中时，则铁电薄膜的显向下微结构均匀，电性能较好，典型的剩余极化强度和矫顽场分别为２７．８μＣ·ｃｍ^-2和６５．１ｋＶ·ｃｍ^-1． 关键词：     

体吸收、边电极热电探测器的分析

本文用一维热扩散模型推出了体吸收、悬空型、边电极热电探测器响应率的表达式,并计算了SBN热电探测器的响应率和NEP与材料的吸收系数、器件厚度、工作频率以及前置放大器输入电容之间的关系。本文认为:1.体吸收、悬空型、边电极热电探测器具有最佳响应率厚度和最佳NEP厚度。两种最佳厚度可以根据本文导出的响应率公式和已知的噪声公式计算出来。2.在某些波段,如果能把材料的吸收系数提高到5×10⁴cm^-1以上,就可以研制性能优良的体吸收薄膜器件。     

STUDY ON PREPARATION OF UV CROSS-LINKING FILMS OF POLYURETHANE-LiClO4 COMPLEXES AND THEIR IONIC CONDUCTIVITY

The complexes of polyurethane containing double bonds with LiClO₄ were formed, and cross-linked films were produced by UV radiation, All of the films were uniform, transparent, flexible and smooth-faced with a considerable mechanical strength. The ionic conductivities of the films of several series of polymers with different molecule weights of PEG segment were measured, of which the highest is 8.09×10^-5S·cm^-1 at 300K under anhydrous atmosphere. Also the conductivity is deeply influenced by the molecule weight of the soft segment PEG of the polyurethane and the content of LiClO₄. The transport number of Li⁺ is about 0.57. Structure characteristic measurement much as DSC, XRD, IR etc., have been done and the conductive mechanism is discussed.