电场作用下高分子中自陷束缚激子的极化

用同时计入电场、对称破缺项t_e和电子-晶格相互作用的紧束缚模型研究了电场作用下高分子中的自陷束缚激子.发现电场使高分子中自陷束缚激子内电荷发生转移，出现极化.极化程度随场强增加，也与t_e有关.并发现t_e≤0.1 eV时，双激子态表现出反向极化特性，这一特性可根据极化的量子力学理论得到理解：对高分子的自陷束缚激子，其禁带中央附近存在两个靠得很近的定域电子态即上定域态和下定域态，用微扰论说明了上定域态是反向极化而下定域态为正向极化；双激子态即上     

高分子中双激子态对外电场的线性响应

在外电场中,非简并基态共轭高分子中的双激子具有反向极化的奇异特性.利用响应函数求得高分子链的双激子态在任意频率下的动态极化率χ(ω),并通过求ω→0极限,给出双激子态的静态极化率χ,证实了χ确实为负值.并与激子态和基态作了比较,分析了分子负极化率的起因.考察了响应函数在低频时的行为,指出激子和双激子的激发浓度增大会导致材料折射率n(ω)向不同方向变化. 关键词：     

电场对高分子中极化子激子的影响

介绍了近年来有关外电场对高分子中极化子激子影响的研究工作。它们包括：研究方法,外电场注入的或光激发引起的电子和穴穴会在高分子中形成极化子激子,弱或中等强度电场使极化子激子极化,强电场解离极化子激子,发现高分子中极化子双激子具有反向极化新性质,探讨反向极化这个新的物理现象的物理起因、意义及可能的应用。     

有机高分子链内的场致激子解离

基于SSH(Su-Schrieffer-Heeger)模型,采用静态及动力学自洽算法模拟了有机高分子链内激子在光激发及外电场作用下的形成与解离过程。结果表明,受光激发后,有机高分子链内激子的生成与解离密切依赖于施加外电场的时机,当外电场与光激发同时发生时,激子能否生成完全取决于电场强度的大小;而当外电场在光激发后的一段时间(通常为皮秒量级)之后被引入,则在有机高分子链内能够形成稳定的激子,且该激子只有在强外电场(超过1MV/cm)的作用下,才会发生解离,临界场强量级与实验结果相符合。     

共轭高聚物中极化子散射引起的激子迁移(英文)

基于Su-Schrieffer-Heeger(SSH)模型并考虑到Brazovskii-Kirova对称破缺项,研究了共轭聚合物中注入极化子和激子在外电场下的散射过程.研究发现在外场作用下极化子总是能通过激子,而激子的运动行为则密切依赖于电场的强度.如果电场大于临界电场3.0×10~5V/cm,那么激子与极化子散射后并不发生任何运动;然而当电场小于此临界值时,激子将在极化子运动的相反方向上有一个明显的位移.激子在弱电场下所发生的这种迁移运动,是由于同极化子发生了慢散射作用.     

极化子单激发态的反向极化研究

通过对有机高分子中极化子的单激发态进行研究，发现该态在外电场下呈现反向极化特征，极化规律与双激子态类似.在强电场下，反向极化消失，极化子单激发态解离为一个单极化子和一个双极化子态. 关键词： 极化子态 激子态 反向极化     

高分子中激子和双激子的极化率(解析计算)

高分子的电致发光是载流子在电场中的输运和复合,为了阐明它的机理,需要研究高分子中激子的极化性质,首先求得了激子和双激子的解析解,然后用线性响应的Green函数方法计 算了两者的极化率,解析地证明了一个重要的结论：激子的极化率为正,双激子的极化率为负.从激子跃迁至双激子,高分子的电偶极矩要反转方向. 关键词： 激子 双激子 解析解 负极化率     

电场对高分子中极化子激子的影响

介绍了近年来有关外电场对高分子中极化子激子影响的研究工作。它们包括 :研究方法 ,外电场注入的或光激发引起的电子和空穴会在高分子中形成极化子激子 ,弱或中等强度电场使极化子激子极化 ,强电场解离极化子激子 ,发现高分子中极化子双激子具有反向极化新性质 ,探讨反向极化这个新的物理现象的物理起因、意义及可能的应用。     

电场作用下高分子中自陷束缚激了的极化

用同时计入电场、对称破损项ｔｅ和电子－晶格相互作用的紧束缚模型研究了电场作用下高分子中的自陷束缚激子，发现电场使高分子中自吵缚激子内电荷发生转移，出现极化，极化程度随场强增加，也与ｔｅ有关，并发现ｔｅ≤０．１ｅＶ时，双激子态表现出反向极化特性，这一特性可根据极化的量子力学化理论得到理解：对高分子的自陷束缚激子，其禁带中央附近存在两上靠得很近的定域电子态即上定域态和下定域态，用微扰论说明限上定域态是     

聚合物发光器件中激子的解离与复合效率

对聚合物发光器件中极化子激子的形成与解离过程进行了详细探讨,提出了极化子激子解离的理论模型及解离概率的解析式,分析了激子解离后正、负极化子的输运过程,认为是极化子的链间跃迁实现了聚合物的电导,计算并讨论了内量子效率随外加电场、温度及杂质浓度的变化关系.该模型较好地解释了有关实验现象. 关键词： 聚合物发光器件 极化子激子 激子解离 内量子效率     

Photoluminescence and electric conductivity in germanium at low temperatures

We have studied the exciton and electron-hole droplet (EHD) luminescence in optically irradiated germanium at temperatures between 1.8 and 4.2 K in the presence of an electric field. Simultaneously the electric conductivity was measured. The sample material was high-purity Ge (N _A –N _D =7·10¹⁰ cm^–3) andp-doped Ge withN _A =3·10¹⁴ cm^–3. In the high-purity Ge samples the exciton and EHD-luminescence intensity decreased nearly linearly as a function of the applied electric current, whereas the dependence upon the electric field was more complicated. Our results could be explained by a model in which carrier annihilation at the contacts following a rapid drifting process plays a dominant role (drift model). In thep-doped Ge samples the current-dependence of the luminescence intensity was qualitatively similar. However, here the drift model is not strictly valid any more because of the reduced carrier mobility and the generation of additional carriers by impurity impact ionization. During variation of the electric field, the luminescence intensity and the electric current show hysteresis. Here the capture of the moving carriers by the EHD appears to play an important role, in addition to the EHD-nucleation process.     

The role of the electron-hole coulomb interaction in quantum confined stark effect

The luminescence peak energy and tunneling lifetime of an exciton in a semiconductor quantum well with a small valence band offset in the presence of a perpendicular electric field is calculated by generalizing the variational approach of quantum confined Stark effect normally used for systems of GaAs/AlGaAs quantum wells. At a finite electric field, the electron-hole Coulomb interaction provides additional confinement to each of the carriers and significantly enhances the Stark shift and the exciton lifetime against field ionization. Numerical results are presented for ZnSe/Zn_1−xMn_xSe heterostructures studies in recent experiments.     

Effect of disorder on exciton dissociation in conjugated polymers

By using a multi-configurational time-dependent Hartree–Fock(MCTDHF) method for the time-dependent Schr ?dinger equation and a Newtonian equation of motion for lattice, we investigate the disorder effects on the dissociation process of excitons in conjugated polymer chains. The simulations are performed within the framework of an extended version of the Su–Schrieffer–Heeger model modified to include on-site disorder, off-diagonal, electron–electron interaction, and an external electric field. Our results show that Coulomb correlation effects play an important role in determining the exciton dissociation process. The electric field required to dissociate an exciton can practically impossibly occur in a pure polymer chain, especially in the case of triplet exciton. However, when the on-site disorder effects are taken into account, this leads to a reduction in mean dissociation electric fields. As the disorder strength increases, the dissociation field decreases effectively. On the contrary, the effects of off-diagonal disorder are negative in most cases. Moreover, the dependence of exciton dissociation on the conjugated length is also discussed.     

电场诱导聚合物分子取向对单线态和三线态激子形成截面的影响

通过对聚乙烯咔唑(PVK) 掺杂三(2-苯基吡啶)铱(Ir(ppy)₃)和4-二氰亚甲基-2-叔丁基-6-(1,1,7,7-四甲基久咯呢定基-9-烯基)-4H-吡喃(DCJTB)，PVK 掺杂DCJTB和PVK掺杂Ir(ppy)₃聚合物在成膜时高压电场作用下分子取向变化对单线态和三线态激子形成截面的研究，发现，随着成膜时电场的增强，单线态激子的形成截面在增加，而三线态激子的形成截面却减小. 关键词： 分子取向 激子形成截面 三线态 单线态     

Large-scale coherence of the bose condensate of spatially indirect excitons

The Bose condensation of spatially indirect (dipolar) excitons in a wide single quantum well in an electric field transverse to the heterolayers is analyzed. Voltage is applied between a metallic film on the surface (Schottky gate) and a conducting electron layer inside a heterostructure (integrated electrode). The excitation of dipolar excitons and observation of their luminescence are performed through circle windows in a metallic mask 5 μm in diameter. Excitons are collected in a ring lateral trap, which is formed along the window perimeter owing to the strongly inhomogeneous electric field. When the critical condensation conditions in pump and temperature are reached, a narrow line of dipolar excitons corresponding to the exciton condensate appears stepwise in the luminescence spectrum. Under these conditions, a spatially periodic structure of equidistant luminescence spots appears in the luminescence pattern that is observed through a window with a resolution of about 1 μm and is selected by means of an interference filter. An in situ optical Fourier transform of spatially periodic structures from the real space to the k space is derived. The resulting Fourier transforms reproducing the pattern of the luminescence intensity distribution in the far field exhibit the result of the destructive and constructive interference, as well as the fact that the luminescence is directed along the normal to the heterolayers. These results are consequences of the large-scale coherence of the condensed exciton state in the ring lateral trap. Direct measurements of double-beam interference from pairs of luminescence spots in the ring show that the spatial coherence length is no less than 4 μm. Such a large scale means that the experimentally observed periodic luminescence structures are described by a common wavefunction under the condition of the Bose condensation of dipolar excitons.     

Electronic excitation of the matrix during drift of excess electrons through solid xenon

It is shown experimentally that the exciton luminescence λ=172 nm) quantum yield excited by excess electrons drifting through solid xenon at 77 K in fields of 10 kV/cm amounts to 20±5 per electron and that luminescence takes place during the entire drift process. A CW bulky discharge through solid xenon (with a current up to 20 A/cm²) is realized, and intense visible luminescence due to excitation of impurities by electron impacts is observed. The prospects for using solid rare gases as matrices for studying processes in low-temperature plasmas and for creating effective electric energy converters in the vacuum ultraviolet range are discussed.     

电场调控下不对称耦合量子点中激子的发光特性

使用有效质量模型,从理论上对GaAs/A10.35Ga0.65As不对称耦合量子点在不同耦合强度下束缚态和反束缚态的能级分裂情况进行了详细分析,重点探讨了电子和空穴的耦合隧穿对量子点体系能级特征及激子发光强度的影响.研究发现:不对称耦合量子点在外电场作用下价带束缚态和反束缚态能级出现反交现象,反交处的能级分裂值和临界电...