Impurity band in SnBi<Subscript>4</Subscript>Se<Subscript>7</Subscript>: thermoelectric power and electrical resistivity measurements

Thermoelectric power and electrical resistivity measurements on polycrystalline samples of Bi₂Se₃ and stoichiometric ternary compound in the quasi-binary system SnSe–Bi₂Se₃ in the temperature range of 90–420 K are presented and explained assuming the existence of an impurity band. The variation of the electron concentration with temperature above 300 K is explained in terms of the thermal activation of a shallow donor, by using a single conduction band model. The density of states effective mass m ^*=0.15m ₀ of the electrons, the activation energy of the donors, their concentration, and the compensation ratio are estimated. The temperature dependence of the electron mobility in conduction band is analyzed by taking into account the scattering of the charge carriers by acoustic phonon, optical phonon, and polar optical phonon as well as by alloy and ionized impurity modes. On the other hand, by considering the two-band model with electrons in both the conduction and impurity bands, the change in the electrical resistivity with temperature between 420 and 90 K is explained.     

On the maximum in hall coefficient temperature dependence in medium-doped n-GaAs

Hall coefficient and conductivity are measured in a wide temperature interval from 14.5 to 295 K in order to characterize n-type GaAs bulk monocrystals with moderate donor concentration 10¹⁷–10¹⁸ cm^–3. The weak temperature dependence of the Hall coefficient, showing a slight maximum at 120 K, is analyzed for the first time in terms of the model developed by Klotynsh and Bariss of discrete local levels degenerate with the continuum. For that purpose the presence of a discrete donor level degenerate with the conduction band is supposed and its energy position is calculated using the model. The concentration and the degeneracy factor of this level are determined by fitting the theoretical temperature dependence of the free electron concentration to the experimental one, the former being calculated using the charge neutrality equation. In addition, a qualitative interpretation of the Hall mobility temperature dependence is given.     

On the correlation between the magnetic structure and the electrical properties of EuB6

Single crystals of EuB₆ were prepared by the floating-zone method. Magnetic and electric measurements on these crystals in the temperature range 1.6–300 K revealed that the pure EuB₆ is an antiferromagnet with a Néel temperature of 5–6 K and has a carrier concentration of 4.2 × 10²⁰ cm^-3. It was found that in polycrystalline sample, defects of Eu ions reduce the carrier concentration and make the sample ferromagnetic. It is suggested that the conduction electrons in pure EuB₆ originate from the overlap of the 4f band tail and the conduction band.     

Electronic properties of epitaxial 6H silicon carbide

The electrical conductivity and Hall coefficient were measured in the temperature range from 78 to 900 K for n-type epitaxially grown 6H silicon carbide. A many-valley model of the conduction band was used in the analysis of electron concentration as a function of temperature. From this analysis, the density of states mass to the free electron mass ratio per ellipsoid was calculated to be 0.45. It was estimated that the constant energy surface of the conduction band consists of three ellipsoids. The ionization energy of the shallowest nitrogen donor was found to be 105 meV, when the valley-orbit interaction was taken into account. The electron scattering mechanisms in the epitaxial layers were analyzed and it was shown that the dominant mechanism limiting electron mobility at high temperatures is inter-valley scattering and at low temperatures (200 K), impurity and space charge scattering. A value of $\text{360}\text{cm}{}^2\text{V}$ sec was calculated for the maximum room temperature Hall mobility expected for electrons in pure 6H SiC. The effect of epitaxial growth temperature on room temperature Hall mobility was also investigated.     

Estimation of various scattering parameters and 2-DEG mobilities from electron mobility calculations in the three conduction bands Γ, L and X of gallium arsenide

The electron drift mobility in Γ conduction band of GaAs has been calculated before, but for the first time, we have made attempts to estimate the electron mobilities in higher energy L and X minima. We have also calculated the value of mobility of two-dimensional electron gas needed to predict hetero-structure device characteristics using GaAs. Best scattering parameters have been derived by close comparison between experimental and theoretical mobilities. Room temperature electron mobilities in Γ, L and X valleys are found to be nearly 9094, 945 and 247 cm²/V-s respectively. For the above valleys, the electron masses, deformation potentials and polar phonon temperatures have been determined to be (0.067, 0.22, 0.39m ₀), (8.5, 9.5, 6.5 eV), and (416, 382, 542 K) as best values, respectively. The 2-DEG electron mobility in Γ minimum increases to 1.54 × 10⁶ from 1.59 × 10⁵ cm²/V-s (for impurity concentration of 10¹⁴ cm⁻³) at 10 K. Similarly, the 2-DEG electron mobility values in L and X minima are estimated to be 2.28 × 10⁵ and 1.44 × 10⁵ cm²/V-s at 10 K, which are about ∼4.5 and ∼3.9 times higher than normal value with impurity scattering present.      

Photoconductivity on europium oxyde single crystals and thin films

In this paper, results of photoconductivity measurements on four EuO samples are given. Low frequency photoconductivity versus temperature (10°K < T < 300°K) and magnetic field H is investigated for two wavelengths: 6600 Å and 9000 Å. The photoconductivity kinetic is also described, and is characterized by a distribution in decay times. Temperature, magnetic field and carrier concentration have small effects on this kinetic. Quenching effect is obtained by adding a continuous illumination (λ₂) to the weak modulated light (λ₁). The kinetic is strongly affected by quenching and becomes more simple. Quenching effect is maximum for the wavelength associated to the 4?⁷–4?⁶ 5d, transition. In contrast to the Penney-Kasuya[1] model we propose another one in which the conduction of equilibrium carriers as photo-excited carriers takes place in a broad band. The variation of low frequency photoconductivity versus temperature is attributed to the mobility variation. This variation agrees well with the model of mobility controlled by spin-disorder. The photoconductivity kinetic is interpreted by a three levels recombination model: the conduction band, the 4f levels and a distribution of trap levels. The lack of variation of photoconductivity decay in the range of metal-semiconductor transition is discussed.     

Thermoelectric power and ac conductivity of A-type Nd2O3

Measurement of thermoelectric power Θ of pressed pellets of A-type Nd₂O₃ from 550 to 1180K and electrical conductivity (σ) at dc, 50 Hz, 1.542 kHz and 3 kHz at different temperatures is reported. It is concluded that electrical conduction at high temperature (T>600K) in this solid is due to positive large polarons in O²⁻ : 2p (valence) band and negative intermediate polarons in Nd³⁺ : 5d (conduction band). The energy band gap of the solid has been found to be 2.44 eV. At low temperatures, conduction by hopping of charge carriers from one impurity centre to another has been predicted.     

Magnetic semiconductors controlled by intra-atomic coulomb correlations: The example of HgCr2Se4

We report transport, magnetic and optical properties of the ferromagnetic semiconductor HgCr₂Se₄, as a function of temperature in the range 4.2 K < T < 300 K. The most outstanding properties are a 40% decrease of the effective mass of the conduction band upon cooling, a monotonic decrease of the electron mobility as a function of temperature, and a continuous transition from a metal-like behavior to a semiconductor-like behavior characterized by an activated regime of the resistivity, as a function of temperature, for any donor concentration in the range N_D > 10¹⁶ cm^-3. These experimental data are found incompatible with the predictions of the usual s-f model of the exchange interaction. It is argued that these properties are due to the intra-atomic Coulomb correlations between d-electrons. A theoretical model is presented, on the basis of the Hubbard Hamiltonian. A good agreement is found between this theory and the experimental data.     

Electrical conduction mechanism and carrier trapping in β-metal free phthalocyanine single crystals

The dark electrical conductivity of β-metal free phthalocyanine single crystals has been investigated over the temperature range 273–600°K, at a reduced pressure of 10^?7 torr. The results obtained are in accordance with the model proposed by Barbe and Westgate[5] for this material, in which the energy gap between the top of the valence band and the bottom of the conduction band is determined to be 2·00 eV. At temperatures below about 410°K, the conduction process is consistent with the presence of an electron trapping level located 0·32 eV below the conduction band edge, with a density of 7×10¹⁶ cm^?3, and a donor level of density 2×10⁷ cm^?3 at the same energy. Above about 410°K, there is evidence to suggest that the conduction process is intrinsic.     

Hall coefficient and conduction mechanism in intermediate concentration n-Ge at helium temperatures

Hall coefficient measurements for intermediate concentration n-type Ge were carried out at liquid helium temperatures. The measurements show that the Hall coefficient and mobility increase with decreasing temperature down to 1.7 K and with increasing magnetic field up to 25 KG. These behaviours are opposite to what was observed in low concentration samples. We conclude that the thermal activated localised hopping motion does not exist in our concentration level, 6 × 10¹⁶ cm^?3, but rather the delocalised quasi-free carriers still dominate the overall conduction for temperature as low as 1.7 K. A model is suggested to explain the Hall mobility behaviour. The model based on the decrease of the dominant scattering mechanism, ionised impurity scattering in our case, as the temperature is lowered and when the magnetic field is increased. From the Hall coefficient behaviour at 4.2 and 1.7 K as well as the resistivity measurements, we found no effect of magnetic field on the unique activation energy existing in this concentration level.     

Temperature,injection level,and frequency dependences of the luminescence in lightly - and heavily-doped CdTe:In

The temperature dependence, injection level dependence, and modulation frequency response of cathodoluminescence have been measured in Te-rich CdTe:In for materials with In concentrations ranging from 3 × 10¹⁵cm^?3 to 1 × 10¹⁸cm^?3. In lightly-doped material, the 80 K luminescence shows sharp band-edge emission near 1.57 eV and a broad impurity-defect band near 1.4 eV. As temperature increases, the 1.4 eV band quenches out, leaving only the band-edge emission. In heavily-doped material, the band- edge emission is absent and the 80 K luminescence shows only the 1.4 eV band. As the temperature increases from 80 K to 300 K, the 1.4 eV band does not quench out but rather undergoes a complex evolution into a long tail on the band-edge emission which begins to appear at approximately 140 K. At a temperature of 200 K, where the luminescence of the heavily-doped material consists of a broad but structured band approximately 0.2 eV in width, frequency response measurements indicate that band-to-band transitions contribute to the high-energy part of the broad luminescence while the remainder of the band results from slower transitions. The frequency and temperature dependences suggest that the luminescence involves an impurity level that has merged with a band edge at an In concentration of $\text{1 × 10}{}^{18}\text{cm}{}^3$. We interpret this behavior as suggesting that the 1.4 eV luminescence in Te-rich CdTe:In results from a partially-forbidden transition between conduction band and a deep acceptor level rather than from an intracenter type of transition.     

Charge carriers and mobility of Cu-Ti ferrite

The concentration and drift mobility of charge carriers in Cu_1–x Ti _x Fe₂O₄ ferrite are calculated, over a wide range of temperatures (300–773 K), employing d.c. conductivity and thermoelectric power data. With increasing temperature the concentration of charge carriers decreases whilst the drift mobility exhibits an exponential increase. Over the above-mentioned temperature range, the obtained density of charge carriers varies between 10²¹ and 10²² cm^–3 whereas the drift mobility has values between 10^–8 and 10^–4 cm²/V s. The results are discussed on the basis of a small-polaron hopping conduction. The activation of the d.c. conductivity has been attributed to the thermal activation of the mobility.     

Enhancement of the electron mobility with infrared photoexcitation in Si: Te at low temperatures

Hall measurements on Te-doped silicon (N _Te 10¹⁶ cm^–3) have been performed in the temperature range between 10 K and 300 K with infrared photoexcitation of electrons into the conduction band. The samples exhibit electron Hall mobilities which are increased by approximately 50% compared to measurements in the dark. The increased electron mobility can be correlated with an increased electron population of shallow donor levels by photoexcitation. Coulomb scattering due to charged shallow donor centers is converted into less efficient dipole scattering (Te-acceptor pairs) by the light-induced redistribution of electrons.     

Halleffekt und anisotropie der beweglichkeit der elektronen in ZnO

Hallconstant, conductivity and Hall mobility of ZnO crystals were measured as function of temperature (4 °K < T < 370 °K) and orientation. Value and anisotropy of mobility can be explained (50 °K < T < 370 °K) by polar optical scattering, deformation potential sc., piezoelectric sc. and sc. by ionized impurities. The anisotropy of mobility is caused only by piezoelectric sc. Maximum values of μ_H are reached for μ_H ⊥ c, with 2400 cm²/V sec at 40 °K and for μ_H ¦ c with 1350cm²/Vsec at 60 °. Below 50 °K Hallconstant, conductivity and Hall mobility are influenced by impurity band conduction processes. The crystals have impurity concentration in the 10¹⁶ cm^?3 range, but they show different donor activation energies depending on growth conditions: Type I: 38,4 meV (50 °K < T < 100 °K) and Type II: 20,3 meV (50 °K < T < 100 °K) and 6 meV (25 °K < T < 50 °K).     

Electrical and chemical characteristics of nano-meter gold encapsulated in mesoporous and microporous channels and cages of FSM-16 and Y zeolites

The dc and ac conductivities as well as the dielectric constant () were measured for different zeolites encapsulated gold (AuCl₃) samples at different temperatures (300-500 K) and various frequencies (5 kHz-1 MHz). The conductivity was found to change in the order Au/FSM-27>Au/NaY>Au/FSM-47. Sorbed water contained inside zeolites assists greatly the proton mobility (zeolite protons) and the ion mobility (Na⁺ and Au⁺) and hence enhance the electric conduction in the temperature range 300-373 K. Raising the temperature over 373 K induces dehydration effect that assists the metallic gold formation and thus a dramatic loss in conductivity was revealed. The conduction mechanism was expected to be partially ionic and partially electronic. The IR study showed that the exposure of Au zeolites to CO gas produced a characteristic band of Au⁺-CO at 2180 cm⁻¹ that tends to decrease with temperatures and even vanishes at 376 K in favor of Au⁰-CO at 2128 cm⁻¹. Similarly, a phase transition at 338 K, that occurs in the range 300-376 K, was confirmed by DTA to further emphasize the temperature regions of either Au⁺ cations (338 K) or Au⁰ (376 K) formation.     

Electrical and seebeck effect measurements in Nb doped VO2

The resistance of pure and Nb doped VO₂ and the Seebeck coefficient of Nb doped VO₂ have been measured in the temperature range of 78–360 K. A simple analysis of the results shows that above 140 K and below the transition temperature the effective density of states in the conduction band of VO₂ is of the order of (but larger than) one state per vanadium atom. This high effective density of states is consistent with the large effective mass (and low mobility) of electrons in this material. It is shown also that in this range, the temperature dependence of the electronic mobility in VO₂ is T^?γ where γ ? 2. Additional results are discussed in the text.     

Thermoelectric power and electrical conductivity of layer compounds n-GaS and n-GaSe

The effective density of states N_c of n-GaS and n-GaSe are calculated from the thermoelectric power, the conductivity and the Hall mobility. From the results on GaS, N_c is found to be 10²¹ cm^-3 at room temperature. The N_c value of the upper conduction band in GaSe appears to be approximately 10²² cm^-3 at room temperature.     

Semiconducting properties of CuIn5S8 single crystals I. Electrical properties

The electrical resistivity and Hall coefficient of n-type CuIn₅S₈ single crystals were measured in the temperature range from 80 K–500 K. The energy gap at 0 K was determined to be 1.4 eV. The donor levels at 0.017 eV and 0.09 eV below the conduction band are identified. The mobility data are analysed assuming scatterings by acoustic and polar optical phonons and ionized impurities.     

Light-induced intrinsic defects in PLZT ceramics

This paper reports on an EPR study of a ferroelectric, 1.8/65/35, and an antiferroelectric, 2/95/5, of optically transparent Pb_1?y La_yZr_1?x Ti_xO₃ (PLZT) ceramics within a broad temperature range (20–300 K) after illumination at a wavelength of 365–725 nm. Illumination with ultraviolet light, whose photon energy corresponds to the band gap of these materials, at T<50 K creates a number of photoinduced centers: Ti³⁺, Pb⁺, and Pb³⁺. It is shown that these centers are generated near a lanthanum impurity, which substitutes for both the Pb²⁺ and, partially, Ti⁴⁺ ions through carrier trapping from the conduction or valence band into lattice sites. The temperature ranges of the stability of these centers are measured, and the position of their local energy levels in the band gap is determined. The most shallow center is Ti³⁺, with its energy level lying 47 meV below the conduction band bottom. The Pb³⁺ and Pb⁺ centers produce deeper local levels and remain stable in the 2/95/5 PLZT ceramics up to room temperature. The migration of localized carriers is studied for both ceramic compositions. It is demonstrated that, under exposure to increased temperature or red light, the electrons ionized into the conduction band from Ti³⁺ are retrapped by the deeper Pb⁺ centers, thus hampering the carrier drift in the band and the onset of photoconduction. The part played by localized charges in the electrooptic phenomena occurring in the PLZT ceramics is discussed.