Improvement in performance of traveling wave electroabsorption modulator with asymmetric intra-step-barrier coupled double strained quantum wells the active region, segmented transmission-line and mushroom-type waveguide

In this paper, asymmetric intra-step-barrier coupled double strained quantum wells structure (AICD-SQW), segmented transmission-line and mushroom-type waveguide that improve the performance of traveling wave electroabsorption modulators (TWEAM) are presented. The AICD-SQW structure shows that electroabsorption modulator properties such as large change in absorption, high extinction ratio, large Stark shift, very low insertion loss, zero chirp, and higher figures of merit are possible to be achieved simultaneously as compared with intra-step quantum well (IQW). The segmented transmission-line method allows us to design a TWEAM with above 25 Ω impedance and very high bandwidth. Furthermore, increasing the width of p-cladding layer with the same active layer to reduce the resistance in p-i-n mushroom-type waveguide of TWEAM based on AICD-SQW improve the microwave propagation loss and thus the high-speed electro-optical response. For this purpose, the transmission-line microwave properties of TWEAM such as microwave index, microwave loss, and characteristic impedance are obtained for active and passive segments of transmission-line. Then equivalent circuit model elements are extracted. The modulation response of segmented transmission-line mushroom-type TWEAM is obtained by HSPICE simulation and compared to circuit model simulation results of conventional mushroom-type TWEAM counterpart. The analysis results indicate that the segmented transmission-line mushroom-type TWEAM can achieve much wider bandwidth than the conventional mushroom-type TWEAM counterpart, with a small penalty in electro-optic conversion gain due to AICD-SQW structure.     

Optical absorption in asymmetric double quantum wells driven by two intense terahertz fields

Optical absorption is investigated for asymmetric double quantum wells driven by a resonant terahertz field and a varied terahertz field both polarized along the growth direction. Rich nonlinear dynamics of the replica peak and the Autler-Townes splitting of various dressed states are systematically studied in undoped asymmetric double quantum wells by taking account of multiple factors, such as the frequency of the varied terahertz field and the strength of the resonant terahertz field. Each electron subband splits into two dressed states when the resonant terahertz field is applied in the absence of the varied terahertz field, the optical absorption spectrum shows the first order Autler-Townes splitting of the electron subbands. When a varied terahertz field is added into the resonant system, the replica peak and the second order Autler-Townes splitting of the dressed states near the band edge respectively emerge when the varied terahertz field is non-resonant and resonant with these dressed states. When the strength of the resonant terahertz field is increased, the first order Autler-Townes double peaks and the replica peak in the optical absorption spectrum shift with the shifts of the dressed states. The presented results have potential applications in electro-optical devices.     

Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 K.The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K.The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth.The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes.The incorporation of bismuth also induces alloy non-uniformity in the quantum well,leading to an increased photoluminescence linewidth.     

Dynamics of resonant and non-resonant tunneling in asymmetric coupled quantum wells

Within the framework of the effective mass approximation, coherent oscillations of a photoexcited electron wave packet in an asymmetric coupled quantum well structure have been studied using a time-dependent Schrödinger equation. In the method of calculation, the continuity of the current across a semiconductor heterojunction is considered. The amplitude and period of the electronic is obtained and in the case of high bias, it is found the existence of electric field-induced tunelling to semiconductor bulk.     

Analytical expressions for asymmetric double quantum wells and their application to semiconductor heterostructures

Analytical solution of Schrödinger's equation for an asymmetric double quantum well structure is obtained for the first time in terms of a transcendental equation, roots of which give energy eigenstates and enable derivation of corresponding wave functions. Results obtained are in agreement with those reported in the literature by numerical methods and do away with the need of perturbation approximation used in such cases. As an example, GaAs/Al _x Ga_{1? x} As system has been discussed with respect to variations in barrier width, quantum well (QW) width, confining potential and material composition. The analysis shows that the coupled QWs can be matched for a given energy level to allow maximum transport between them by variation of one or more of these parameters so that the energy difference between it and the next nearest state is minimal. This condition shows a complete delocalization and the probability of finding the electron in the two QWs becomes equal, which amounts to an asymmetric system becoming symmetric with respect to probability density.     

Optical characteristic analysis and TE0 mode selection for asymmetric metal-clad waveguides

The optical characteristics of the asymmetric metal-clad waveguide are analysed, more accurate formulae are derived for calculating the propagation constants and loss coefficients of TE and TM modes. The computed results for Al/GaAs/AlGaAs waveguides are in good agreement with the numerical results, and are much more accurate than the results in some other papers. The method for selecting the TE₀ mode is presented and discussed.     

Optical gain and threshold properties of strained InGaAlAs/AlGaAs quantum wells for 850-nm vertical-cavity surface-emitting lasers

The valence subband structures, optical gain spectra, transparency carrier densities, and transparency radiative current densities of different compressively strained InGaAlAs quantum wells with Al_0.3Ga_0.7As barriers are systematically investigated using a 6 × 6 k · p Hamiltonian including the heavy hole, light hole, and spin-orbit splitting bands. The results of numerical calculations show that the maximum optical gain, transparency carrier densities, transparency radiative current densities, and differential gain of InGaAlAs quantum wells can be enhanced by introducing more compressive strain in quantum wells. However, further improvement of the optical properties of InGaAlAs quantum wells becomes minimal when the compressive strain is higher than approximately 1.5%. The simulation results suggest that the compressively strained InGaAlAs quantum wells are of advantages for application in high-speed 850-nm vertical-cavity surface-emitting lasers.     

A Modified full-vectorial finite-difference beam propagation method based on H-fields for optical waveguides with step-index profiles

A modified full-vectorial finite-difference beam propagation method based on H-fields in solving the guided-modes for optical waveguides with step-index profiles is described. The propagation is split into two substeps. In the first substep, the field propagates in the absence of the cross-coupling terms, and then they are evaluated and double used in the second substep. An improved six-point finite-difference scheme is constructed to approximate the cross-coupling terms along the transverse directions. By using the imaginary-distance procedure, the field patterns and the normalized propagation constants of the fundamental modes for a buried rectangular waveguide and rib waveguide are presented, and the hybrid nature of the full-vectorial guided-modes is demonstrated. Solutions are in good agreement with the benchmark results from film mode matching method, which tests the validity and utility of the present method.     

Exact traveling wave solutions for a generalized Hirota-Satsuma coupled KdV equation by Fan sub-equation method

In this Letter, the Fan sub-equation method is used to construct exact solutions of a generalized Hirota-Satsuma coupled KdV equation. Many exact traveling wave solutions are successfully obtained, which contain more general solitary wave solutions and Jacobian elliptic function solutions with double periods. This method is straightforward and concise, and it can also be applied to other nonlinear evolution equations.     

Matrix method for analysis of optical waveguides and quantum well structures

The one dimensional wave equation

InGaAs/InAlAs多量子阱脊形波导及定向耦合器光波特性准矢量分析

提出了一种基于级数展开的三维准矢量束传播法(SE-QV-BPM)用以分析由InGaAs/InAlAs多量子阱构成的脊形光波导及定向耦合器.结果表明，刻蚀深度相同时，TM模比TE模在水平方向限制强，且TM模的模场在波导角上出现畸变；波导间距相同时，定向耦合器TM波的耦合长度大于TE波的耦合长度，对偏振态敏感.分析获得了浅/深刻脊形光波导承载的准矢量TE/TM基模、定向耦合器承载的TE/TM偶/奇模的模场分布及其有效折射率，模拟了光场在定向耦合器中的传输演变情况.另外，SE-QV-BPM导出矩阵小，计算效率高 关键词： 级数展开 准矢量束传播法 多量子阱 InGaAs/InAlAs     

Linear and nonlinear intersubband optical absorption and refractive index changes of asymmetric double semi-parabolic quantum wells

The optical properties of the asymmetric double semi-parabolic quantum wells (DSPQWs) are investigated numerically for typical GaAs/Al_xGa_1−xAs. Optical properties are obtained using the compact density matrix approach. In this work, effects of the structure parameters such as the barrier width and the well widths on the optical properties of the asymmetric DSPQWs are investigated. The results show that the linear and nonlinear optical properties of asymmetric DSPQW are non-monotonic functions of these structure parameters. The behavior of the refractive index changes of asymmetric DSPQW with the variation of the barrier width is different substantially with that of symmetric DSPQW. Results reveal that the resonant peak values of the total absorption coefficient of asymmetric DSPQW is usually greater than that of symmetric DSPQW. Our calculations also show that the total absorption coefficient of asymmetric DSPQW is larger than that of asymmetric double square quantum well.     

Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators

We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (EC-UTC-PDs) and intra-step quantum well electroabsorption modulators (IQW-EAMs) on n-InP substrates.These devices exhibit simultaneously 2.1 GHz and 16.2 dB RF-gain at 21 GHz with a 450 thin-film resistor and a bypass capacitor integrated on a chip.     

一类海-气耦合振子模型行波解的渐近解法

热带海-气振子是一个复杂的自然现象.本文是对一个海-气耦合振子模型,利用一个待定系数和摄动理论相结合的新方法,得到了相应模型的行波渐近解.