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采用固相法在较低温度下合成了Eu2+激活的Ca2SiO3Cl2高亮度蓝白色发光材料,并对其发光性质进行了研究。其发射光谱由两个谱带组成,峰值分别位于420,498nm处,归结为Ca2SiO3Cl2晶体中占据两种不同Ca2+格位的Eu2+离子的5d→4f跃迁发射。改变Eu2+浓度,可以使样品的发光在蓝白色和绿白色之间变化。当Eu2+浓度为0.005mol-1时,样品呈现很亮的蓝白色发光。两个发射峰的激发光谱均分布在250~410nm的波长范围内,峰值分别位于333,369nm处。Ca2SiO3Cl2:Eu2+可被InGaN管芯产生的近紫外辐射有效激发,是一种性能良好的白光LED用单一基质蓝白色荧光粉。 相似文献
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采用共沉淀法制备了不同Eu3+掺杂浓度的CaWO4荧光粉材料.通过X射线衍射和场发射扫描电镜技术对样品的结构和形貌进行了表征.测量了各样品的激发光谱、发射光谱和荧光衰减曲线, 计算了各样品的部分Judd-Oflet (J-O)参数和5D_0 (Eu3+)能级量子效率,以及荧光粉的色坐标, 讨论了样品电荷迁移带相对强度、J-O参数、量子效率与掺杂浓度的依赖关系.对Eu3+掺杂的CaWO4 发光材料的光致发光性质的研究表明,在CaWO4: Eu3+中5D0→7F2跃迁的616~nm 红色发光能被394.5~nm和465~nm的激发光有效激发,具有近紫外(或蓝光)激发效率高和猝灭浓度大的优点, 有潜力成为高效的近紫外(或蓝光)激发白光发光二极管用红色荧光粉材料. 相似文献
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用高温固相法合成了Eu2+,Mn2+共激活的Ca2SiO3Cl2高亮度白色发光材料,并对其发光性质进行了研究.该荧光粉在近紫外光激发下发出强的白色荧光,Eu2+中心形成峰值为419 nm和498 nm的特征宽带,通过Eu2+中心向Mn2+中心的能量传递导致了峰值为578 nm的发射,三个谱带叠加从而在单一基质中得到了白光.激发光谱均分布在250-415 nm的波长范围,红绿蓝三个发射带的激发谱峰值分别位于385 nm,412 nm,370 nm和396 nm处,可以被InGaN管芯产生的紫外辐射有效激发.Ca2SiO3Cl2:Eu2+,Mn2+是一种很有前途的单一基质白光LED荧光粉. 相似文献
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三基色荧光粉中, 红色荧光粉性能较差, 为获得性能优良的红色荧光粉, 本文采用高温固相法合成了Eu2+, Cr3+单掺杂及共掺杂的碱土金属多铝酸盐MAl12O19 (M =Ca, Sr, Ba) 发光体. 实验表明, 在以上三种基质中均存在Eu2+→Cr3+的能量传递, 利用能量传递可以有效将Eu2+的蓝光或绿光转换为红光. 三种碱土金属多铝酸盐基质的晶体结构相似,但Eu2+, Cr3+发光受晶体场影响,导致在不同的基质中Eu2+, Cr3+间能量传递效率不同.通过光谱分析及能量传递效率计算发现, 相同掺杂浓度下,CaAl12O19中Eu2+→Cr3+的能量传递效率最高,SrAl12O19次之, BaAl12O19最低.红光转换率在CaAl12O19中最高. 相似文献
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研究了退火温度对ZrO2纳米材料中Eu3+离子发光性质的影响. 材料的结构、晶粒尺寸和形状以及晶格的排列分别由XRD,TEM表征. 结果表明:用共沉淀法制备的ZrO2纳米材料具有不随退火温度变化、稳定的四方结构;材料的晶粒尺寸随退火温度的提高而增大;晶格的排列由无序逐渐变为有序;发射光谱表明其主要发射在595 nm和604 nm处;在394 nm的紫外光辐照下得到了不同样品的604 nm荧光发射强度的变化不同. 这种现象与样品中O2-离子含量和样品表面的表面缺陷有关;另外,电荷迁移带随退火温度的变化而变化. 相似文献
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采用固相法制备了一种新型的白光LED用LiSrBO3∶Sm3+红色发光材料,并研究了材料的光谱特性.材料的激发与发射光谱显示其能够被404 nm近紫外光激发,发射599 nm红光,很好的符合近紫外光激发下白光LED的需要.研究了Sm3+浓度对材料发射强度的影响,发现Sm3+浓度为3 mol%时,强度最大.添加Na+或K+也可提高LiSrBO3∶Sm3+材料的发射强度. 相似文献
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研究了Eu2+激活的绿色发光材料Ca3SiO5的制备条件和发光性质. Eu2+中心形成主峰值为501 nm和次峰值为570 nm的特征宽带,两峰值叠加形成发射峰值为502nm的绿色发射光谱带. 利用这些光谱结果和Van Uitert 经验公式,确认Ca3SiO5:Eu2+中存在两种性质有差异的Eu2+发光中心,它们分别占据基质中八配位的Ca2+(Ⅰ)格位和四配位的Ca2+(Ⅱ)格位. 其激发光谱分布在250—450 nm的波长范围,峰值位于375 nm处,可以被InGaN管芯产生的350—410 nm辐射有效激发.
关键词:
发光
荧光粉
绿色荧光粉
3SiO5')" href="#">Ca3SiO5
2+')" href="#">Eu2+ 相似文献
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Luminescence characteristics of Eu2+ activated Ca2SiO4 Sr2SiO4 and Ba2SiO4 phosphorsfor white LEDs 下载免费PDF全文
<正>This paper investigates the luminescence characteristics of Eu2+ activated Ca2SiO4,Sr2SiO4 and Ba2SiO4 phosphors. Two emission bands are assigned to the f-d transitions of Eu2+ ions doped into two different cation sites in host lattices,and show different emission colour variation caused by substituting M2+ cations for smaller cations.This behaviour is discussed in terms of two competing factors of the crystal field strength and covalence.These phosphors with maximum excitation of around 370 nm can be applied as a colour-tunable phosphor for light-emitting diodes(LEDs) based on ultraviolet chip/phosphor technology. 相似文献
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Luminescence characteristics of Eu3+ activated borate phosphor for white light emitting diode 下载免费PDF全文
In this paper, the Sr3Y2 (BO3)4:Eu3+ phosphor was synthesized by high temperature solid-state reaction method and the luminescence characteristics were investigated. The emission spectrum exhibits one strong red emission at 613nm corresponding to the electric dipole 5D0--7F2 transition of Eu3+ under 365nm excitation, this is because Eu3+ substituted for Y3+ occupied the non-centrosymmetric position in the crystal structure of Sr3Y2 (BO3)4. The excitation spectrum indicates that the phosphor can be effectively excited by ultraviolet (254nm, 365nm and 400nm) and blue (470nm) light. The effect of Eu3+ concentration on the red emission of Sr3Y2 (BO3)4:Eu3+ was measured, the result shows that the emission intensities increase with increasing Eu3+ concentration, then decrease. The Commission Internationale del'Eclairage chromaticity (x, y) of Sr3Y2(BO3)4:Eu3+ phosphor is (0.640,0.355) at 15 mol% Eu3+. 相似文献
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A novel yellow emitting phosphor Dy3+, Bi3+ co-doped YVO4 potentially for white light emitting diodes 下载免费PDF全文
Novel Y1 x yVO4:xDy3+,yBi3+(0.01 ≤ x ≤ 0.05,0 ≤ y ≤ 0.20) phosphors for light emitting diode(LED) were successfully synthesised by solid-state reaction.The calculation results of electronic structure show that YVO4 has a direct band gap with 3 eV at G.The top of the valence band is dominated by O 2p state and the bottom of the conduction band is mainly composed of O 2p and V 3d states.An efficient yellow emission under near-ultraviolet(365 nm) excitation is observed.Compared with the pure YVO4:Dy3+ samples,the Dy3+,Bi3+ co-doped samples show a more intensive emission peak(at 574 nm) and a new broad emission band(450-770 nm),due to the 4F9/2 6H13/2 transition of Dy3+ and the emission of the VO3 4 Bi3+ complex respectively.The optimum chromaticity index of Y1 x yVO4:xDy3+,yBi3+(0.01 ≤ x ≤ 0.05,0 ≤ y ≤ 0.20) is(0.447,0.497),which indicates that YVO4:Dy3+,Bi3+ has higher colour saturation than the commercial phosphor YAG:Ce3+.The effects of concentration of Dy3+,Bi3+,electric states and the photoluminescence properties are discussed in details. 相似文献
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Structure and luminescence of Ca2Si5N8:Eu^2+ phosphor for warm white light-emitting diodes 下载免费PDF全文
We have synthesized Ca 2 Si 5 N 8:Eu 2+ phosphor through a solid-state reaction and investigated its structural and luminescent properties.Our Rietveld refinement of the crystal structure of Ca 1.9 Eu 0.1 Si 5 N 8 reveals that Eu atoms substituting for Ca atoms occupy two crystallographic positions.Between 10 K and 300 K,Ca 2 Si 5 N 8:Eu 2+ phosphor shows a broad red emission band centred at ~1.97 eV-2.01 eV.The gravity centre of the excitation band is located at 3.0 eV-3.31 eV.The centroid shift of the 5d levels of Eu 2+ is determined to be ~1.17 eV,and the red-shift of the lowest absorption band to be ~ 0.54 eV due to the crystal field splitting.We have analysed the temperature dependence of PL by using a configuration coordinate model.The Huang-Rhys parameter S=6.0,the phonon energy ν=52 meV,and the Stokes shift S=0.57 eV are obtained.The emission intensity maximum occurring at ~200 K can be explained by a trapping effect.Both photoluminescence (PL) emission intensity and decay time decrease with temperature increasing beyond 200 K due to the non-radiative process. 相似文献
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采用高温固相法合成了系列Ca2MgSi2O7:Dy3+,Tm3+发光材料。对样品进行了XRD结构表征,测量了激发光谱、发射光谱、色温和荧光寿命。研究结果表明,Ca2MgSi2O7:Tm3+在355 nm激发下显示出蓝色发光,在CIE1931中的色坐标为x=0.165 9,y=0.082 2,色纯度为89%。通过Dy3+和Tm3+的叠加激发谱带激发,即在349,353,365 nm激发下,Ca2MgSi2O7:Dy3+,Tm3+显示出青白、冷白和暖白光,相关色温值分别为5 193,9 672,4 685 K。300~500 nm区域间可以有效地激发Ca2MgSi2O7:Dy3+,Tm3+,并在400~600 nm之间产生蓝光和黄光复合产生的白光,表明该体系可用作白光LED的发光材料。 相似文献
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利用热压法将TiO2微粒掺入至YAG:Ce荧光粉和硅树脂中制备出远程荧光粉膜并封装成白光发光二极管(LED)器件, 通过荧光粉相对亮度仪、双积分球测试系统和可见光光谱分析系统对样品的光色性能及机理进行了研究. 结果表明: TiO2的散射效应能够显著提高蓝光的利用率和黄光的透射强度, 白光LED器件的光通量在TiO2浓度为0.966 g/cm3 时达到最高值415.28 lm(@300 mA, 9.3 V), 提高了8.15%, 相关色温从冷白6900 K逐渐变化至暖白3832 K. TiO2的掺入不仅提高了远程荧光粉膜的发射强度和白光LED器件的光通量, 同时能调控其相关色温. 相似文献