多源感应耦合等离子体的产生及等离子体诊断

基于单组多匝线圈的小腔体感应耦合等离子体，研究了线圈配置与耦合效率等之间的关联，并将实验结果应用到多组并联螺旋天线感应耦合等离子体放电体系中.采用了改进的朗谬尔探针方法对单源和多源感应耦合等离子体的电参量分别进行了表征.结果表明，使用多螺旋天线并联方式可以产生低气压高密度的感应耦合等离子体放电，通过调整工艺参量，可以将等离子体密度和光刻胶的刻蚀均匀性控制在80％以上. 关键词： 多源感应耦合等离子体 朗谬尔探针 等离子体灰化     

感应耦合等离子体的1维流体力学模拟

 采用双极扩散近似的流体力学模型,通过数值模拟方法研究了射频感应耦合等离子体(ICP)中等离子体密度和电子温度等物理量的空间分布,其中射频源的功率沉积由动力学理论给出。分析了不同的射频线圈的驱动电流和放电气压对等离子体密度和电子温度空间分布的影响。在低气压下,等离子体密度基本上保持空间均匀分布。随着放电压强的增加,等离子体密度的分布呈现出明显的空间不均匀性。当线圈电流增大时,等离子体密度和电子温度都随着增大。     

感应耦合等离子体的1维流体力学模拟

采用双极扩散近似的流体力学模型,通过数值模拟方法研究了射频感应耦合等离子体(ICP)中等离子体密度和电子温度等物理量的空间分布,其中射频源的功率沉积由动力学理论给出。分析了不同的射频线圈的驱动电流和放电气压对等离子体密度和电子温度空间分布的影响。在低气压下,等离子体密度基本上保持空间均匀分布。随着放电压强的增加,等离子体密度的分布呈现出明显的空间不均匀性。当线圈电流增大时,等离子体密度和电子温度都随着增大。     

感应耦合等离子体中和枪的电子引出特性研究

给出了一种感应耦合等离子体源的设计,用于等离子体中和枪装置.通过实验方法研究等离子体源的电子引出特性,并结合理论分析了等离子体密度随射频功率的变化关系.研究结果表明等离子体源的电子引出特性与放电腔内气压有关联性,E?H模式转换中电子密度的变化与负载的电感值相关.研究成果对等离子体中和枪的发展有重要的参考价值.     

射频感应耦合低压等离子体特性分析

采用光谱诊断法和Langmuir单探针法对射频感应耦合Ar气等离子体特性进行分析。通过光栅光谱仪研究了低气压下Ar气等离子体的光谱强度的变化特性,采用Langmuir单探针法测量不同条件下电子密度和电子温度。等离子体发射光谱的光谱强度随着气压和功率的增加而增强,射频功率对光谱强度的影响较明显。当功率从120W增加到180W时,光谱强度将会迅速增加,等离子体发生E模向H模的模式转换。Langmuir单探针法测量的电子密度和电子温度在的变化规律符合E模向H模转换的变化规律。     

氩气感应耦合等离子体速度与温度数值模拟

为了获得用于研究再入飞行器热防护系统的感应耦合等离子体风洞流场数据,基于流场、电磁场和化学场的多场耦合建立了非平衡态感应耦合等离子体数值模型。利用该模型对不同入口质量流率和不同工作压力下的感应耦合等离子体进行了数值模拟,得到了相应工作参数下感应耦合等离子体温度与速度的分布特性。计算结果表明:等离子体中心线上的速度随着入口质量流率的增大而增大,而随着工作压力的增大而减小;同时,等离子体中心线上的温度随着入口质量流率的增大而减小,而随着压力的增大先减小后增大。这些结果可为感应耦合等离子体风洞优化设计及其工业应用提供理论指导。     

感应耦合等离子体增强射频磁控溅射沉积ZrN薄膜及其性能研究

利用感应耦合等离子体(ICP)增强射频磁控溅射技术在Si(111)片和M2钢表面制备了ZrN薄膜,研究了基片的温度和ICP功率对ZrN薄膜的结构以及性能影响.研究发现：在基片温度≤300℃沉积的ZrN薄膜择优取向为(111);基片温度达到450℃时薄膜出现ZrN(200)衍射峰,ZrN(111)晶面的织构系数明显降低.传统磁控溅射沉积薄膜为柱状结构,当ICP为200 W,基片温度为300℃时沉积薄膜中柱状晶体消失;随着基片温度的升高,N/Zr元素比例降低,并且薄膜的电阻率下降;相对于传统溅射,ICP增强射 关键词： 感应耦合等离子体 磁控溅射 ZrN 微结构     

感应耦合等离子体制备球形铬粉末的工艺研究

采用感应耦合热等离子体作为高温热源,对形状不规则的铬粉末进行了球化处理,研究了送粉速率对球形粉末的流动性、球化率的影响,并采用金相显微镜和霍尔流速计对球形粉末的表观形貌和流动性进行了测定。研究结果表明：形状不规则的粉末经过等离子体处理后,绝大部分以上的粉末均变为球形或类球形。对于粒径在200～300目之间的铬粉,随着送粉速率的增加,球化后的粉末流动性逐渐增强,球化率增加;当送粉速率为35g•min^-1时,其流动性和球化率分别约为56.18s/50g和85.6%,两者均达到了最佳效果。     

Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias

The inflexion point of electron density and effective electron temperature curves versus radio-frequency （RF） bias voltage is observed in the H mode of inductively coupled plasmas （ICPs）. The electron energy probability function （EEPF） evolves first from a Maxwellian to a Druyvesteyn-like distribution, and then to a Maxwellian distribution again as the RF bias voltage increases. This can be explained by the interaction of two distinct bias-induced mechanisms, that is： bias- induced electron heating and bias-induced ion acceleration loss and the decrease of the effective discharge volume due to the sheath expansion. Furthermore, the trend of electron density is verified by a fluid model combined with a sheath module.     

CF4气体ICP等离子体中的双温电子特性

使用朗谬尔探针方法研究了低压CF4气体感应耦合等离子体（ICP）的放电特性.结果表明 ，CF4等离子体的电子呈现双温分布：一类是密度低、能量高的快电子，另一类是密度高 、能量低的慢电子.快电子温度The、慢电子温度Tce以及它们的平均 电子温度Te随射频输入功率的增加而下降；而它们的密度nhe，nce和ne随功率的增加而上升.从电子与气体粒子碰撞能量平衡的角度解释了双温电子特性与射频输入功率之间的关系. 关键词： 感应耦合等离子体 CF4气体 朗谬尔探针 电子温度     

RF electric field penetration and power deposition into nonequilibrium planar-type inductively coupled plasmas

The RF electric field penetration and the power deposition into planar-type inductively coupled plasmas in low-pressure discharges have been studied by means of a self-consistent model which consists of Maxwell equations combined with the kinetic equation of electrons. The Maxwell equations are solved based on the expansion of the Fourier--Bessel series for determining the RF electric field. Numerical results show the influence of a non-Maxwellian electron energy distribution on the RF electric field penetration and the power deposition for different coil currents. Moreover, the two-dimensional spatial profiles of RF electric field and power density are also shown for different numbers of RF coil turns.     

Time-resolved radial uniformity of pulse-modulated inductively coupled O_2/Ar plasmas

Time-resolved radial uniformity of pulse-modulated inductively coupled O_2/Ar plasma has been investigated by means of a Langmuir probe as well as an optical probe in this paper. The radial uniformity of plasma has been discussed through analyzing the nonuniformity factor β(calculated by the measured n_e, lower β means higher plasma radial uniformity). The results show that during the active-glow period, the radial distribution of ne exhibits an almost flat profile at the beginning phase, but it converts into a parabola-like profile during the steady state. The consequent evolution for β is that when the power is turned on, it declines to a minimum at first, and then it increases to a maximum, after that, it decays until it keeps constant. This phenomenon can be explained by the fact that the ionization gradually becomes stronger at the plasma center and meanwhile the rebuilt electric field(plasma potential and ambipolar potential) will confine the electrons at the plasma center as well. Besides, the mean electron energy( ε_(on)) at the pulse beginning decreases with the increasing duty cycle. This will postpone the plasma ignition after the power is turned on. This phenomenon has been verified by the emission intensity of Ar(λ = 750.4 nm). During the after-glow period, it is interesting to find that the electrons have a large depletion rate at the plasma center. Consequently, ne forms a hollow distribution in the radial direction at the late stage of after-glow. Therefore, β exhibits a maximum at the same time. This can be attributed to the formation of negative oxygen ion(O~-) at the plasma center when the power has been turned off.     

气压对微束射频容性放电模式调制的研究

微束射频容性放电在纳米晶体颗粒等离子体增强气相合成有着潜在的应用前景.本论文利用ICCD、单反相机、高压探头和电流探头等对微束射频容性放电特性进行了实验诊断研究.结果发现:在纯氩气微束射频放电中,随着气压的增加,放电从辉光放电模式向多通道丝状放电模式转换;在99％氩/1％氢混合气体微束射频放电中,丝状放电模式消失,而是...     

ICP微等离子体射流在快速成形制造中的应用

本文开展了大气压甚高频感应耦合(ICP)微等离子体射流的特性与应用研究.在150 MHz甚高频,功率为90 W条件下获得温度高达上千度的温热等离子体射流,射流长度近3 cm.随着气流量的增加射流将呈现层流到湍流的转变,长度先增后减;而功率对于射流长度的影响存在着一个上限,当等离子体吸收的能量与扩散损失的能量达到平衡时,射流长度将达到最大.利用这种ICP微等离子体射流进行了微尺寸金属铜的快速成形制造,得到了球冠状和柱状铜金属件.在扫描电子显微镜下观察到沉积物表面最小颗粒尺寸远小于铜粉颗粒;X射线衍射结果显示沉积物表面存在弱氧化物峰,这是沉积过程中空气被射流卷入所致.     

Non-linear lumped model circuit of capacitively coupled plasmas at the intermediate radio-frequencies

The discharge dynamics in geometrically asymmetric capacitively coupled plasmas are investigated via a lumped model circuit. A realistic reactor configuration is assumed. A single and two separate RF voltage sources are considered. One of the driven frequencies (the higher frequency) has been adjusted to excite a plasma series resonance, while the second frequency (the lower frequency) is in the range of the ion plasma frequency. Increasing the plasma pressure in the low pressure regime ($\le 100\text{mTorr}$) is found to diminish the amplitude of the self-excited harmonics of the discharge current, however, the net result is enhancing the plasma heating. The modulation of the ion density with the lower driving frequency affect the plasma heating considerably. The net effect depends on the amplitude and the phase of the ion modulation.     

Evolution of vacuum ultraviolet emission in dual-frequency capacitively coupled plasmas

In plasma material processing, vacuum ultraviolet (VUV) emission is released from gas discharges, leading to undesirable results. Energetic VUV photons enable the creation of an electron-hole pair current when their energy is larger than the bandgap energy of the plasma-facing top layer during plasma material processing. For example, the high energy of VUV photons from helium (21.2 eV), argon (11.6 eV), and oxygen (13.6 eV) is sufficient to generate induced currents in SiO₂ thin films. These feedstock gases are widely used in many procedures utilizing low-temperature industrial plasmas. Thus, the VUV emission evolution with both the power ratio between high (60 MHz) and low (2 MHz) frequencies and pulse duty ratio of the low-frequency radio frequency (rf) power in a dual-frequency capacitively coupled plasma, which is indispensable in modern plasma etching processes, was investigated. Both the power ratio between high and low frequencies and the pulse duty ratio changed the electron temperature, leading to evolution of the VUV emission intensity.     

Interpolation formula for the electrical conductivity of nonideal plasmas

On the basis of a quantum‐statistical approach to the electrical conductivity of nonideal plasmas we derive analytical results in the classical low‐density regime, in the degenerate Born limit, and for the contribution of the Debye‐Onsager relaxation effect. These explicit results are used to construct an improved interpolation formula of the electrical conductivity valid in a wide range of temperature and density which allows to compare with available experimental data of nonideal plasmas.     

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为了更好地提高引出离子束的均匀性,对离子束刻蚀用矩形射频电感耦合等离子体(ICP)离子束源提出了三种线圈的设计方法,并对这三种线圈激发的电场进行了数值计算和比较。结果表明,直线段式不等距天线和并联多螺旋不等距天线线圈能够产生均匀性良好的电场,且其耦合效率高。