Real-time in situ spectroscopic ellipsometry investigation of the amorphous to crystalline phase transition in Mo single layers

Molybdenum single layers were grown by ion beam sputter deposition onto [001] Si substrates. Argon or xenon was used as sputter gas. The layer growth was monitored by real-time in situ spectroscopic ellipsometry in the visible spectral region. A volume phase transition from amorphous to polycrystalline molybdenum layer growth was observed during the deposition process. The time regime of the phase transition as well as the layer thickness at which the phase transition occurs, depends on the sputter regime, especially on sputter species and deposition-pressure range. The thermodynamic approach of energy minimisation is discussed as the driving force for the Mo phase transition. A moderate backscattered particle bombardment of the growing molybdenum film provides the activation energy for the recrystallisation process. A self-diffusion-like process is made responsible for atomic rearrangement of the entire as-deposited thin-film volume. The molybdenum phase transition is connected to thin-film densification and therefore volume contraction. PACS 68.65.Ac; 81.15.Cd; 78.67.Pt     

On the phase transition in a thin ferroelastic film

The distribution of spontaneous deformation in a thin ferroelastic film has been found on the basis of the Landau thermodynamic theory. The temperature dependences of the free energy, specific heat, and elastic compliance have been determined at different degrees of fixation of the order parameter on the film surface.     

Deformation mechanisms of ultra-thin Al layers in Al/SiC nanolaminates as a function of thickness and temperature

The mechanical properties of Al/SiC nanolaminates with layer thicknesses between 10 and 100 nm were studied by nanoindentation in the temperature range 25 to 100 °C. The strength of the Al layers as a function of the layer thickness and temperature was obtained from the hardness of the nanolaminates by an inverse methodology based on the numerical simulation of the nanoindentation tests by means of the finite element method. The room temperature yield stress of the Al layers showed a large ‘the thinner, the stronger’ effect, which depended not only on the layer thickness but also on the microstructure, which changed with the Al layer thickness. The yield stress of the Al layers at ambient temperature was compatible with a deformation mechanism controlled by the interaction of dislocations with grain boundaries for the thicker layers (>50 nm), while confined layer slip appeared to be dominant for layers below 50 nm. There was a dramatic reduction in the Al yield stress with temperature, which increased as the Al layer thickness decreased, and led to an inverse size effect at 100 °C. This behavior was compatible with plastic deformation mechanisms controlled by grain boundary and interface diffusion at 100 °C, which limit the strength of the ultra-thin Al layers.     

The transition from bulk to nano as a phase transition

It is demonstrated that the chemical potential of bosons trapped in a harmonic potential shows a discontinuity as a function of the number of particles in the system. In the model used, it is shown that if the number of particles is of the order of 10⁶ or greater, bulk-like behaviour is exhibited by the system. This translates to a ratio of V/V_c>10⁶ for bulk behaviour, where V is the crystallite volume of the experimental sample and V_c is the volume of the unit cell. Several experimental results covering a wide range of physical phenomena that corroborate the fact that such a number-induced phase transition indeed exists are presented.     

Measurement-noise maximum as a signature of a phase transition

We propose that a maximum in measurement noise can be used as a signature of a phase transition. As an example, we study the energy and magnetization noise spectra associated with first- and second-order phase transitions by using Monte Carlo simulations of the Ising model and 5-state Potts model in two dimensions. For a finite size system, the total noise power and the low frequency white noise S(f0 and the total noise power vanishes. f(-1)(knee) is approximately the equilibration time.     

Formation of Condon domains as a phase transition

It is shown, for the first time, that approaching the Condon domain phase in temperature from above is accompanied by critical temperature growth of the susceptibility thereby indicating formation of Condon domains, which occurs as a phase transition. The study is based on a recent measurement of the temperature dependence of the susceptibility in silver in magnetic field of 25 T under conditions of the nonlinear de Haas-van Alphen effect. Experimental results for the positive and negative slopes of the magnetization in one de Haas-van Alphen period are in good agreement with results of the calculations presented here. The Curie-Weiss law for the susceptibility is derived for a needle-type specimen. The Curie constant is calculated.     

The critical thickness of silicon-germanium layers grown by liquid phase epitaxy

Silicon-germanium layers are grown from metallic solution on (100) and (111) silicon substrates. On (111) Si, coherently strained dislocation-free SiGe layers are obtained with thicknesses larger than predicted by the current models of misfit-induced strain relaxation. A comprehensive characterisation by imaging, diffraction, and analytical electron microscopy techniques is carried out to determine the critical thickness, study the onset of plastic relaxation, and explain the particular growth mechanisms leading to an unexpectedly high thickness of elastically strained SiGe layers. A vertical Ge concentration gradient and the formation of step edges on the layers, where lateral strain relaxes locally, explain the high critical thickness. The model of Matthews and Blakeslee is modified in order to match the experimental observations for solution-grown SiGe layers. Received: 29 July 1999 / Accepted: 29 July 1999 / Published online: 27 October 1999     

Determination of thin film refractive index and thickness by means of film phase thickness

A new approach for determination of refractive index dispersion n(λ) (the real part of the complex refractive index) and thickness d of thin films of negligible absorption and weak dispersion is proposed. The calculation procedure is based on determination of the phase thickness of the film in the spectral region of measured transmittance data. All points of measured spectra are included in the calculations. Barium titanate thin films are investigated in the spectral region 0.38–0.78 μm and their n(λ) and d are calculated. The approach is validated using Swanepoel’s method and it is found to be applicable for relatively thin films when measured transmittance spectra have one minimum and one maximum only.      

Magnetic field diffusion during a metal-insulator phase transition

An analysis is made of the diffusion of a static (slowly varying) magnetic field in a conductor in which a first-order phase transition to the insulating state takes place under the action of the Joule heating. An investigation is made of the case of subsonic propagation of the phase boundary. A (V_1−X Cr_X)₂O₃ solid solution is analyzed as a model substance. The application of this effect in pulsed high-current circuit breakers is discussed. Zh. Tekh. Fiz. 68, 43–48 (December 1998)     

Phase transition properties of ferroelectric thin films with two surface layers

The phase diagrams of ferroelectric thin films with two surface layers described by the transverse Ising model have been studied under the mean-field approximation. We discuss the effects of the exchange interaction and transverse field parameters on the phase diagrams. The results indicate that the phase transition properties of the phase diagrams can be greatly modified by changing the transverse Ising model parameters. In addition, the crossover features of the parameters from the ferroelectric dominant phase diagram to the paraelectric dominant phase diagram are determined for ferroelectric thin films with two surface layers.     

On the reflectivity of surfaces with thin transition or contaminated layers

The spatial profile of the dielectric pemittivity of any bulk sample is always to some extent smoothed or modified by various factors including interaction with atmospheric and environmental gases. This fact hinders optical measurements and should be taken into account in the interpretation of experimental data. The modification of the Fresnel reflectivity formula for the case where the spatial permittivity distribution deviates from an abrupt stepwise profile is considered. A correction in terms of the integral characteristics of this deviation is obtained and it is valid ifa sin δ<λ, wherea is the depth of the contaminated layer, and λ and δ are the wavelength and grazing angle of the incident beam, respectively.     

Isotropic-nematic phase transition in a system of slightly flexible long thin rods

On the basis of Onsager's formalism, the isotropic-nematic phase transition in a system of slightly flexible long thin rods are studied theoretically. The phase diagram and some other physical quantities are calculated and the effects of flexibility are clarified. In particular, it is shown that with increasing flexibility of the rods, the transition density increases and the metastable region of each phase becomes wide.     

Granular phase transition as a precondition for segregation

Experimental results are presented on the segregation of a mixture of spheres with two different sizes, rolling on a circularly vibrating table. Beyond a critical density of particles a demixing occurs leading to a clustering of the larger ones. A monodisperse layer of spheres shows a liquid-solid-like phase transition at a slightly lower critical density. These critical particle densities are both found to be independent of the driving frequency, but decrease with increasing vibration amplitude.     

Surface structure and composition of flat titanium thin films as a function of film thickness and evaporation rate

To correlate flat titanium film surface properties with deposition parameters, titanium flat thin films were systematically deposited on glass substrates with various thicknesses and evaporation rates by electron-beam evaporation. The chemical compositions, crystal structure, surface topographies as well as wettability were investigated by using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscopy (AFM) and water contact angle measurement, respectively. The films consisted mainly of TiO₂. Small percentages of Ti₂O₃ and metallic Ti were also found at the film surface using high-resolution XPS analysis. Quantitative XPS showed little differences regarding elemental compositions among different groups of films. The films were obtained by varying the deposition rate and the film thickness, respectively. XRD data showed consistent reflection patterns of the different titanium samples deposited using different film thicknesses. Without exception measurements of all samples exhibited contact angles of 80° ± 5°. Quantitative AFM characterization demonstrated good correlation tendency between surface roughness and film thickness or evaporation rate, respectively. It is important to notice that titanium films with different sizes of grains on their surfaces but having the same chemistry and film bulk structure can be obtained in a controllable way. By increasing the film thickness and evaporation rate, the surface roughness increased. The surface morphology and grain size growth displayed a corresponding trend. Therefore, the control of these parameters allows us to prepare titanium films with desired surface properties in a controllable and reproducible way for further biological investigations of these materials.     

Raman scattering in crystalline fluorosilicate hexahydrates of iron and manganese at a phase transition

The work reports a Raman scattering study of FeSiF₆·6H₂O and MnSiF₆·6H₂O crystals within the 2–340 K temperature range. The crystals are ordered at low temperatures. Phase transition-induced changes in the spectra have been observed. An analysis of the number and polarization of the Raman lines has permitted determination of the symmetry of the high-and low-symmetry phases. A possible mechanism of the phase transition is proposed. Fiz. Tverd. Tela (St. Petersburg) 39, 929–939 (May 1997)     

On electrostatic models of a metal-insulator phase transition in crystalline semiconductors with hydrogen-like impurities

Two well-known models for calculating the critical density N _C of a metal-insulator transition, as a function of the Bohr radius a _H of an isolated impurity as temperature T→0 K, are refined by making allowance for the screening of ions by electrons hopping along impurities. In one model, the transition at N _C1 is explained by the appearance of delocalized electrons as the impurity band is displaced into the allowed-energy band as a result of a decrease in the electron (hole) affinity of ionized impurities. In the other model the transition is explained by an unbounded increase in the static permittivity of the crystal as the density of impurity atoms increases to N _C2. The obtained approximations N _C1 ^1/3 a _H≈0.24 and N _C2 ^1/3 a _H≈0.20 for the degree of compensation K=0.01 describe existing experimental data for 1<a _H<10 nm. Fiz. Tverd. Tela (St. Petersburg) 40, 147–151 (January 1998)