Phonon scattering at siliconcrystal surfaces

Our observations of the reflection or backscattering of high-frequency phonons (v =280 GHz to 1 THz) at silicon-solid interfaces disagree significantly with predictions from the acoustic mismatch model. Interfaces composed of materials theoretically wellmatched, show high scattering experimentally. In contrast, interfaces theoretically poorly matched, show less phonon scattering than expected. Generally, this is best expressed by the fact that the interface scattering ranges from roughly 30–60% for different phonon modes with little dependence on the material covering the silicon crystal and different techniques of interface preparations. Thus, our experiments indicate that the well-known Kapitza anomaly of the phonon scattering at solid-liquid helium interfaces is not a special case; the same anomaly appears to be present at all tested interfaces. Our experiments are compared with detailed calculations which either assume pure specular or pure diffusive scattering. In these calculations the influence of the crystal anisotropy for the phonon propagation (phonon focussing) is included. This comparison shows, especially for the free silicon surface, that phonons are completely diffuse scattered. Hence, the acoustic mismatched model relying on specular reflection cannot be applied to the real silicon interface. The frequency dependence of phonon scattering at a free silicon interface indicates the existence of at least two different diffusive scattering mechanisms. Within our experimental limits in these two scattering processes the phonons are elastically scattered.     

Characterization of single-crystalline GaAs by imaging with ballistic phonons

Ballistic phonon propagation in single-crystalline [001]-oriented gallium arsenide has been studied using low-temperature scanning electron microscopy for imaging. Deviations in the phonon focusing pattern due to dispersion effects were found by comparing the phonon images to theoretical calculations of the long-wavelength limit. The phonon propagation behavior in, samples cut from differently prepared wafers has been investigated. For highly impure crystals we found a pronounced increase of the diffusive signal component at the expense of the ballistic one. Samples with varying dislocation densities also showed a sensitive dependence, of the ballistic phonon propagation on these crystal defects. For focusing calculations considering elastic scattering processes the diffusivity of the phonons could be determined as a function of the mean scattering length. We have found phonon mean free paths of 0.35 mm to 0.80 mm for the various GaAs crystals.     

Phonon focusing of elastically scattered phonons in GaAs

The propagation of high-frequency phonons through crystals at low temperatures is characterized by both ballistic and diffusive processes. Ballistic propagation of heat pulses is highly anisotropic due to phonon focusing, while diffusive propagation is expected to be nearly isotropic in cubic crystals. By using phonon imaging techniques, we have attempted to identify the heat flux from ballistic and scattered phonons in GaAs. Comparison of this data to Monte Carlo calculations which incorporate elastic scattering shows that the flux from phonons scattered a few times in the bulk retains a significant degree of anisotropy. In particular, a sharp feature discovered by Stock, Ulbrich, and Fieseler and attributed to ballistic propagation of phonons with frequencies up to 1.5 THz is now identified with the scattering of sub-THz phonons. Our analysis provides insights into the evolution of heat propagation from the ballistic to diffusive regimes.     

Influences of diffusive reflection intensity and pulse shaping of ultrashort lasers on turbid media

The influences of the absorption μ_a, the scattering μ_s, and the anisotropy coefficient g on the optical properties of ultrashort pulse in turbid media has been simulated based on the diffusive approximation theory. The laser pulse intensity will be attenuated and the diffusive scattering pulse shape will be widened in the turbid media. Various medium parameters have different influences on the reflection of the laser pulse. The intensity loss of the diffusive reflection light is obtained when μ_a and μ_s are increased in turbid media. The pulse width of the diffusive reflection pulse is rapidly increased far away from the incident point and at the same time the pulse times that are delayed have been numerical simulated in the boundary conditions of semi-infinite homogenous media.     

Phonon emission from a metallic film excited by nanosecond electrical pulses

We report the first measurements of heat pulses generated by electrical excitation of a thin metallic film on a nanosecond time scale. Using heater power densities of between 8 and 800 Wmm^-2, we found a significant variation of the phonon pulse length reaching the bolometer and also of the ratio of transverse to longitudinal polarisation amplitudes. The phenomena were attributed to diffusive propagation due to highly frequency dependent phonon scattering within a thin damaged layer at the surface of the sapphire substrate.     

散射介质成像中的时间门研究

研究了用蒙特卡罗方法模拟均匀散射介质中含有光学性质不同的小球时,漫反射信号随时间的变化,当小球和激励源的相对位置不同时随时间变化的漫反射曲线也不同,利用这种漫反射信号的差异同时结合时间门技术可以对散射介质中一定浓度的物体成像。结论表明成像对比度与时间门的开始时刻和时间门宽度有直接关系。针对小球投影位置漫反射信号的强和弱,分别用半宽度点和最大强度的80％点作为小球办界位置的判断。     

Band structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors

Semiconducting single-walled carbon nanotubes are studied in the diffusive transport regime. The peak mobility is found to scale with the square of the nanotube diameter and inversely with temperature. The maximum conductance, corrected for the contacts, is linear in the diameter and inverse temperature. These results are in good agreement with theoretical predictions for acoustic phonon scattering in combination with the unusual band structure of nanotubes. These measurements set the upper bound for the performance of nanotube transistors operating in the diffusive regime.     

Phonon focusing and electron–phonon drag in semiconductor crystals with degenerate charge-carrier statistics

We study the effect of anisotropy in elastic properties on the electron–phonon drag and thermoelectric phenomena in gapless semiconductors with degenerate charge-carrier statistics. It is shown that phonon focusing leads to a number of new effects in the drag thermopower at low temperatures, when diffusive phonon scattering from the boundaries is the predominant relaxation mechanism. We analyze the effect of phonon focusing on the dependences of the thermoelectromotive force (thermopower) in HgSe:Fe crystals on geometric parameters and the heat-flow directions relative to the crystal axes in the Knudsen regime of the phonon gas flow. The crystallographic directions that ensure the maximum and minimum values of the thermopower are determined and the role of quasi-longitudinal and quasi-transverse phonons in the drag thermopower in HgSe:Fe crystals at low temperatures is analyzed. It is shown that the main contribution to the drag thermopower comes from slow quasi-transverse phonons in the directions of focusing in long samples.     

Reduction of phonon mean free path: From low-temperature physics to room temperature applications in thermoelectricity

It has been proposed for a long time now that the reduction of the thermal conductivity by reducing the phonon mean free path is one of the best way to improve the current performance of thermoelectrics. By measuring the thermal conductance and thermal conductivity of nanowires and thin films, we show different ways of increasing the phonon scattering from low-temperature up to room-temperature experiments. It is shown that playing with the geometry (constriction, periodic structures, nano-inclusions), from the ballistic to the diffusive limit, the phonon thermal transport can be severely altered in single crystalline semiconducting structures; the phonon mean free path is in consequence reduced. The diverse implications on thermoelectric properties will be eventually discussed.     

Thermal conductance of thin silicon nanowires

The thermal conductance of individual single crystalline silicon nanowires with diameters less than 30 nm has been measured from 20 to 100 K. The observed thermal conductance shows unusual linear temperature dependence at low temperatures, as opposed to the T3 dependence predicted by the conventional phonon transport model. In contrast to previous models, the present study suggests that phonon-boundary scattering is highly frequency dependent, and ranges from nearly ballistic to completely diffusive, which can explain the unexpected linear temperature dependence.     

Cars probing of the Si Raman mode transformation during strong picosecond pulsed-laser irradiation

We report on picosecond coherent anti-Stokes Raman scattering (CARS) probing of the Si optical phonon spectrum transformation during picosecond pulsed-laser irradiation. CARS spectra were obtained in reflection at various laser fluences up to melting. The observed spectrum broadening is theoretically explaned in terms of phonon heating and laser-induced mechanical stress build-up on a time scale of 10ps.     

Phonon modulation of Stark-cyclotron resonances

We demonstrate the possibility of oscillations of magnetic peak positions of the Stark-cyclotron resonance due to acoustic phonon scattering in confined superlattices and investigate oscillations of the hopping current in the Wannier–Stark localization regime due to phonon folding and electron Bragg reflection. Manifestation of these effects in recent experiments is discussed.     

Effects of non-equilibrium polar optic phonons and the band non-parabolicity on small signal high-frequency hot electrons ac mobility in narrow gap semiconductors in high magnetic fields

The small signal high-frequency ac mobility of hot electrons in n-HgCdTe in the extreme quantum limit at low and high temperatures have been calculated considering the non-equilibrium phonon distribution as well as the thermal phonon distribution .The energy loss rate has been calculated considering only optical phonon scattering while the momentum loss rate has been calculated considering acoustic phonon scattering and piezoelectric scattering together with polar optical phonon scattering and separately considering only the polar optical scattering. The results have been discussed and compared. It has been observed that at 20 K, the normalized mobility considering all the three scattering mechanisms differs appreciably from that considering only the polar optical phonon scattering. However, at 77 K, there is no difference in the normalized mobility. This establishes the fact that at higher temperature, the effect of acoustic phonon scattering and piezoelectric coupling is negligible, compared to the polar optical phonon scattering. So the ac mobility considering only polar optical phonon scattering has been studied at 77 and 20 K. The ac mobility is found to remain constant up to 100 GHz and thereafter it started decreasing at higher frequencies at 77 K whereas the ac mobility reduces at much lower frequencies at lower temperature at lower field. The non-parabolicity of the band structure enhances the normalized mobility.     

Heat transfer in the plastic phases I and II of cyclopentane

Thermal conductivity of solid cyclopentane C₅H₁₀ has been measured at isochoric conditions in the plastic phases I and II for samples of different densities. Isochoric thermal conductivity is nearly constant in phase II and increases with temperature in phase I. Such behaviour is attributed to weakening of the translational orientational coupling which, in turn, leads to a decrease of phonon scattering on rotational excitations. The experimental data are described in terms of a modified Debye model of thermal conductivity with allowance for heat transfer by both low-frequency phonons and diffusive modes.     

Nuclear spin relaxation in strongly disordered superconductors

The influence of nonmagnetic impurity and spin-orbit scattering on the nuclear spin-lattice relaxation rate in strongly disordered superconductors is presented. Using Anderson's exact-eigenstate formalism, it is shown that there exist two effects of disorder onT ₁ ^–1 . Firstly, nonmagnetic impurity and spin-orbit scattering enhances the magnitude of the relaxation rate in the same manner as in the normal dirty metal due to the diffusive nature of quasiparticle motion. Secondly, the Hebel-Slichter peak becomes suppressed due to the disorder enhancement of the quasiparticle inelastic scattering rate due to phonon, Coulomb, and/or spin-fluctuation interactions. Comparison with the available experimental data is made.     

Light scattering by the apical oxygen sublattice in a thin layer of YBaCuO crystal

Peculiarities of scattering of a TM-polarized light wave by the apical oxygen sublattice, which are associated with dispersion of a phonon n-polariton localized in an ultrathin YBaCuO layer, are studied. The difference between the angle of scattering of the luminous flux from the angle of reflection is estimated for the maximum of the Raman frequency shift. It is shown that the amplitude of g-oscillations of bridge oxygen ions in the vicinity of the resonance frequency increases sharply; consequently, it becomes possible to observe additional (in respect to bulk) scattering of coherent electromagnetic waves at the Stokes and anti-Stokes frequencies.     

Scattering of thermal phonon pulses by isotopes in silicon

The pure ballistic propagation of acoustic phonons in crystals at low temperatures can be described within anisotropic continuum acoustics. One needs only the elastic constants and mass densities to calculate the time-dependent spectral phonon irradition of the bolometer for a given radiator pulse power and detector/radiator geometry. We extend this treatment by including single isotope-scattering events for the phonons in a (111)-cut silicon disk on their flight from the radiator to the detector. Using the earlier experimentally determined polarization and frequency dependent phonon absorption in the bolometer metal, the instantaneous temperature of the bolometer can be calculated from this irradiation. This allows a direct comparison with measured bolometer temperatures using exactly the same transmission or reflection arrangement as in calculation. A very satisfying agreement is observed in the expected range of single phonon scattering.     

Low-field carrier transport properties in biased bilayer graphene

Based on a semiclassical Boltzmann transport equation in random phase approximation, we develop a theoretical model to understand low-field carrier transport in biased bilayer graphene, which takes into account the charged impurity scattering, acoustic phonon scattering, and surface polar phonon scattering as three main scattering mechanisms. The surface polar optical phonon scattering of carriers in supported bilayer graphene is thoroughly studied using the Rode iteration method. By considering the metal–BLG contact resistance as the only one free fitting parameter, we find that the carrier density dependence of the calculated total conductivity agrees well with that observed in experiment under different temperatures. The conductivity results also suggest that in high carrier density range, the metal–BLG contact resistance can be a significant factor in determining the BLG conductivity at low temperature, and both acoustic phonon scattering and surface polar phonon scattering play important roles at higher temperature, especially for BLG samples with a low doping concentration, which can compete with charged impurity scattering.     

Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect measurements on AlGaN/GaN heterostructures grown by MOCVD have been carried out as a function of temperature in the range 1.8-275 K at a fixed magnetic field. The IR and Raman spectroscopy measurements have been carried out at room temperature. The experimental data for the temperature dependence of the Hall mobility were compared with the calculated electron mobility. In the calculations of electron mobility, polar optical phonon scattering, ionized impurity scattering, background impurity scattering, interface roughness, piezoelectric scattering, acoustic phonon scattering and dislocation scattering were taken into account at all temperatures. The result is that at low temperatures interface roughness scattering is the dominant scattering mechanism and at high temperatures polar optical phonon scattering is dominant.     

CuA1S2 crystalline lattice dynamics

Using the model of rigid ions bound by short-distance forces the lattice dynamics of the CuA1S₂ crystal with chalcopyrites structure are investigated. The model parameters are determined from experiments on infrared reflection and combination scattering of light. The phonon spectrum is calculated in the center of the Brillouin zone and in directions of high symmetry. Oscillator amplitudes for frequencies active in IR reflection and components of the static dielectric permeability tensor are calculated.