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研究了一类n阶电阻网络任意2节点间的等效电阻问题,解决了一个之前一直没有解决的电阻网络难题.首先给出了一个任意2节点间等效电阻的普适公式,然后采用网络分析方法构建了差分方程模型以及边界条件约束方程模型,由此证明了所给出的等效电阻公式.最后给出了无穷网络的等效电阻公式,并且将特殊情形下的结论与其他结论进行了对比与讨论,验证了本文所得结论的正确性. 相似文献
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研究了一类n阶三脚架网络的等效电阻模型,该模型含有7个不同的电阻元素,因而包含了多个网络模型.文章采用构建等效模型的方法导出了一个非线性差分方程模型,采用变量代换的方法间接地给出了非线性差分方程的通解.本文进一步创造了一个负电阻的概念,获得了电阻网络任意节点间的等效电阻公式.利用特殊条件下的数个特殊例子与相关结果进行了比较.本文的结论也适用于复阻抗网络的等效复阻抗研究. 相似文献
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3×n阶电阻网络等效电阻的研究 总被引:11,自引:3,他引:8
研究了3×n阶电阻网络的等效电阻.应用矩阵变换方法求解了差分方程组,给出了3×n阶电阻网络等效电阻的一个简洁的普适规律,并计算出了无穷3×n阶电阻网络的等效电阻,发现无穷3×n阶电阻网络的等效电阻,是一个无理数. 相似文献
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任意矩形电路网络中的电位分布问题一直是科学研究的难题.本研究发展了研究电阻网络的递推-变换(RT)理论使之能够用于计算任意m×n阶电路网络模型.研究了一类含有任意边界的m×n阶矩形网络的电位分布及等效电阻,这是一个之前一直没有解决的深刻问题,因为之前的研究依赖于规则的边界条件或一个含有零电阻的边界条件.其他方法如格林函数技术和拉普拉斯矩阵方法计算电位函数比较困难,研究含有任意边界的电阻网络也是不可能的.电位函数问题是自然科学和工程技术领域研究的一个重要内容,如拉普拉斯方程的求解问题就是其中之一.本文给出了含有一条任意边界的m×n矩形电阻网络的节点电位函数解析式,并且得到了任意两节点间的等效电阻公式,同时导出了一些特殊情形下的结果.在对不同结果的比较研究时,得到了一个新的数学分式恒等式. 相似文献
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鉴于电阻网络模型研究的重要意义,以及3×n阶电阻网络尚没有完全解决,本文研究了3×n阶电阻网络的对角等效电阻,通过网络分析构建差分方程组模型,通过矩阵变换方法巧解差分方程组,根据具体的边界条件,给出了3×n阶网络对角等效电阻的一个简洁的普适规律. 相似文献
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本文应用基尔霍夫节点电流定律和回路电压定律,建立了3元矩阵方程模型,构造了矩阵变换方法,经过一系列严格的推导与计算,较好地证明了3×n阶蛛网等效电阻猜想的正确性,同时给出了3×n阶蛛网等效电阻公式.通过比较分析进一步给出了3×n阶蛛网在无限情形时的等效电阻公式,并且探讨了3×n阶蛛网等效电阻的单调性质. 相似文献
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规则联接的多边形电阻网络的等效电阻研究 总被引:1,自引:0,他引:1
规则联接的多边形电阻网络可以简化为两部分相同的电阻网络的并联,将其中一部分变换为梯形电阻网络,针对奇数边形和偶数边形对应的梯形网络不同,经过相应的变换得到了规则联接的多边形电阻网络的表达式,这一结论也适用于规则联接的多边形电容网络. 相似文献
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Recursion-transform approach to compute the resistance of a resistor network with an arbitrary boundary 下载免费PDF全文
We consider a profound problem of two-point resistance in the resistor network with a null resistor edge and an arbitrary boundary,which has not been solved before because the Green’s function technique and the Laplacian matrix approach are invalid in this case.Looking for the exact solutions of resistance is important but difficult in the case of the arbitrary boundary since the boundary is a wall or trap which affects the behavior of a finite network.In this paper,we give a general resistance formula that is composed of a single summation by using the recursion-transform method.Meanwhile,several interesting results are derived by the general formula.Further,the current distribution is given explicitly as a byproduct of the method. 相似文献
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Two-point resistance of an m×n resistor network with an arbitrary boundary and its application in RLC network 下载免费PDF全文
A rectangular m × n resistor network with an arbitrary boundary is investigated, and a general resistance formula between two nodes on an arbitrary axis is derived by the Recursion-Transform(RT) method, a problem that has never been resolved before, for the Green's function technique and the Laplacian matrix approach are inapplicable to it. To have the exact solution of resistance is important but it is difficult to obtain under the condition of arbitrary boundary. Our result is directly expressed in a single summation and mainly composed of characteristic roots, which contain both finite and infinite cases. Further, the current distribution is given explicitly as a byproduct of the method. Our framework can be effectively applied to RLC networks. As an application to the LC network, we find that our formulation leads to the occurrence of resonances at h_1= 1-cosφ_i-sinφ_icotnφ_i. This somewhat curious result suggests the possibility of practical applications of our formulae to resonant circuits. 相似文献
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从碳纳米管中Kondo效应的影响出发, 在有限温度下采用Anderson模型表征碳纳米管/磁杂质系统, 利用Landauer公式对磁杂质碳纳米管的电导和热电势进行研究, 得出和实验结果一致结论.
关键词:
Kondo效应
碳纳米管
电输运特性 相似文献
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本文系统地研究了不同形状(三方、四方及六方) 的孔缺陷对锯齿形石墨烯纳米条带电学特性的影响. 结果表明: 孔缺陷形状对于石墨烯纳米条带的电导及电流特性影响显著, 其可能源于不同形状的孔缺陷边界对于电子散射的不同; 另外, 当缺陷悬挂吸附氢或氮原子, 将引起孔缺陷形状改变, 因此不同孔缺陷吸附对于石墨烯纳米条带的电学特性的影响也各不相同. 本研究将为石墨烯基电子器件失效分析及石墨烯孔结构器件设计提供有价值的理论指导.
关键词:
石墨烯
孔缺陷
电学特性 相似文献
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The influence of iodine on the electrical properties of sandwich structures of magnesium phthalocyanine (Mg Pc) thin films
with gold and aluminium electrodes has been investigated. The various electrical properties and different electrical parameters
of the iodine-doped Mg Pc thin film devices have been estimated and compared with the values of normal Mg Pc devices from
the analysis of the current-voltage characteristics. Generally samples showed an asymmetric conductivity both under forward
and reverse bias. From our study we found that iodine doped Mg Pc films showed an enhanced electrical conductivity of nearly
ten times that of typical Mg Pc. At low voltages the films showed an ohmic conduction with a hole concentration of P0 = 6.34 × 1018 m−3 and hole mobility μ = 9.16 × 10−5 m 2 V−1 s−1, whereas at higher voltage levels the conduction is dominated by space charged limited conduction (SCLC) with a discrete
trapping level of 1.33 × 1022 m−3 at 0.63 eV above the valance band edge. The ratio of the free charges to trapped charges (trapping factor) for the doped
samples was found to be 1.07 × 10−7. Furthermore the reverse conduction mechanisms have also been investigated. From the current limitations in the reverse condition
a strong rectifying behaviour was evident which was attributed to Poole-Frankel emission with a field-lowering coefficient
of value 2.24 × 10−5 eV m1/2 V−1/2. 相似文献
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Nanocrystalline tungsten trioxide particles were prepared by a wet-chemical method. Transmission electron microscope (TEM) analysis shows that the average grain size is about 15nm. The oxygen deficiency of nanometre-sized sample is higher than that of ordinary tungsten trioxide. The electric conductivity increases because of high oxygen deficiency. Ironic relaxation polarization and crystallographic shear (CS) planes theory were used to explain the unusual dielectric characteristic of nanocrystalline tungsten trioxide. 相似文献
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介绍了用于两端分子电子器件电性能测试的纳米孔技术、交叉线接触技术、导电原子力显微镜技术、扫描隧道显微镜技术、纳米间距电极技术以及机械可控断裂结技术.结合分子器件的电性能测试要求,对各类测试方法进行了分析评价,并简要指出了分子器件电性能测试研究的发展趋势。 相似文献
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介绍了用于两端分子电子器件电性能测试的纳米孔技术、交叉线接触技术、导电原子力显微镜技术、扫描隧道显微镜技术、纳米间距电极技术以及机械可控断裂结技术.结合分子器件的电性能测试要求,对各类测试方法进行了分析评价,并简要指出了分子器件电性能测试研究的发展趋势. 相似文献