On the differential conductivity of semiconductor superlattices

The nature of negative differential conductivity (NDC) of a semiconductor superlattice was studied. It is shown that the presence of regions with a negative effective mass in a Brillouin miniband is not necessary for NDC to set in. NDC exists even in superlattices with parabolic and superquadratic miniband dispersion relations, where the electron effective mass is positive everywhere and, in this case, is fully determined by Bragg reflections of the electron. When the electron Bragg reflections are suppressed by optical phonons, NDC can disappear completely. NDC is retained only if there is a sizable region with a negative effective mass in the miniband.     

Dynamical electron localization and self-induced transparency in semiconductor superlattices

The mechanisms of the occurrence of self-induced and selective transparencies of semiconductor superlattices in a strong time-dependent electric field are investigated. The association of these mechanisms with Bloch oscillations, dynamical localization, and collapse of electron quasi-energy minibands is analyzed, and a comparison with the properties of Josephson junctions is made. It is shown that the self-induced transparency is due to the fact that the current-contributing component of the electron distribution function is destroyed by collisions at discrete values of the amplitude of the time-harmonic field, while the selective transparency is associated with the nonmonotonic dependence of the spectrum of nonlinear electron oscillations in the electric field on the amplitude of the field. The dynamical localization and collapse of quasi-energy minibands lead to the field energy dissipation and are favorable to destruction of the transparency states of the superlattice.     

Terahertz conductivity and possible BLOCH gain in semiconductor superlattices

We have investigated terahertz emission due to dynamical electron transport in wide-miniband GaAs/Al(0.3)Ga0.7As superlattices. By noting that the time-domain THz emission spectroscopy inherently measures the step-response of the electron system to the bias electric field, the obtained THz spectra were compared with the high-frequency conductivities predicted for miniband transport. Excellent agreement between theory and experiment strongly supports that the THz gain due to Bloch oscillating electrons persists at least up to 1.7 THz. It was also found that Zener tunneling into the second miniband sets the high-frequency limit to the THz gain for the samples studied here.     

Amorphous semiconductor superlattices

The structural and electronic properties of a new class of superlattices consisting of layers of a-Si:H 8–1200 thick interleaved with a-Ge:H, a-Si_1?xC_x:H or a-SiN_x:H are reviewed.     

Absolute negative conductivity and spontaneous current generation in semiconductor superlattices with hot electrons

We study transport through a semiconductor superlattice with an electric field parallel to and a magnetic field perpendicular to the growth axis. Using a semiclassical balance equation model with elastic and inelastic scattering, we find that (1) the current-voltage characteristic becomes multistable in a large magnetic field and (2) "hot" electrons display novel features in their current-voltage characteristics, including absolute negative conductivity and a spontaneous dc current at zero bias. We discuss experimental situations providing hot electrons to observe these effects.     

Self-oscillations in semiconductor superlattices

An investigation is made of nonlinear oscillations of the field and current in semiconductor superlattices driven by strong terahertz radiation. Regimes of periodic, quasi-periodic, and stochastic self-oscillations are determined and mechanisms for their formation are discussed. It is shown that the self-oscillation spectra are many-valued functions of the external field amplitude and the static field in them is either absent, weak, or fractionally quantized. Previously predicted states of self-induced superlattice transparency and dynamic electron localization are destroyed as a result of the evolution of dissipative and parametric instabilities and can only be observed in transient processes whose duration decreases with increasing electron concentration.     

Dynamical mean-field theory of nickelate superlattices

Dynamical mean-field methods are used to calculate the phase diagram, many-body density of states, relative orbital occupancy, and Fermi-surface shape for a realistic model of LaNiO(3)-based superlattices. The model is derived from density-functional band calculations and includes oxygen orbitals. The combination of the on-site Hunds interaction and charge transfer between the transition metal and the oxygen orbitals is found to reduce the orbital polarization far below the levels predicted either by band-structure calculations or by many-body analyses of Hubbard-type models which do not explicitly include the oxygen orbitals. The findings indicate that heterostructuring is unlikely to produce one band-model physics and demonstrate the fundamental inadequacy of modeling the physics of late transition-metal oxides with Hubbard-like models.     

Minimum thermal conductivity of superlattices

The phonon thermal conductivity of a multilayer is calculated for transport perpendicular to the layers. There is a crossover between particle transport for thick layers to wave transport for thin layers. The calculations show that the conductivity has a minimum value for a layer thickness somewhat smaller then the mean free path of the phonons.     

Helicon waves in semiconductor superlattices

The dispersion relation for the helicon frequency of a system consisting of a periodic array of two-dimensional gas layers is studied as a function of both q and q_z, the components of the wavevector parallel and perpendicular to the layers. The result is compared with that for a homogeneous three-dimensional electron gas.     

Hopping mobility in semiconductor superlattices

We present results on the electrical transport perpendicular to interfaces in GaAs/Al_xGa_1?xAs superlattices. We have measured the current-voltage characteristics on a series of superlattices. This has been simulated numerically, the superlattice being replaced by an effective medium. Using this model we obtain the values of the effective mobility as a function of the superlattice period. Our data are in good agreement with a theory of phonon-assisted hopping transport between localized states, rather than the theory of phonon-limited band transport of Bloch waves.     

Polariton modes in semiconductor superlattices

Polariton electric fields and dispersion relations of some important complex-basis superlattices have been derived by means of electromagnetic theory and the Bloch's theorem. The spatial distribution of the polariton electric fields shows an interesting physical picture: the polaritons are mainly bulk modes as the wavenumber k is small and become typical interface modes with very strong peak intensities as k increases.     

Fano resonances in semiconductor superlattices

We use semiconductor superlattices as a model system for the investigation of Fano resonances. In absorption the excitonic transitions of the Wannier–Stark ladder show the typical asymmetric line shape due to coupling to the continuum of lower-lying transitions. The unique feature of these Fano resonances is that they allow to continuously tune the key parameter – the coupling strength Γ between the discrete state and the degenerate continuum – by varying the bias voltage. Using this feature, we directly show that the Fano coupling leads to a fast polarization decay. We also investigate the dependence of the Fano parameters on the structure of the superlattice and compare with an extensive theoretical model of the resonances.     

Collective excitations in semiconductor superlattices

Collective excitations in semiconductor superlattices are studied beyond tbe random-phase approximation (RPA). The Singwi, Tosi, Land and Sjölander (STLS) theory, which accounts for exchange and short-range correlations effects through an effective potential depending on the structurc factor, is generalized to the layered electron system described by the model of Visscher and Falicov. The exact numerical solution of the STLS self-consistent equations provides information about intraplane and interplane correlations. The plasmon dispersion curves are evaluated for some typical values of the coupling constant r_s of the electron system and the distance between the planes for GaAs/AlGaAs semiconductor superlattices. For comparison, the RPA and the Hubbard approximation are also considered.     

Collective modes in semiconductor superlattices

Electronic collective modes in a semiconductor superlattice structure are studied within the self-consistent field approach. Plasmon and magneto-plasmon dispersion relations are obtained for the cases of strong and weak coupling between layers. The interaction of these collective modes with optical phonons is also investigated.     

Forcing of chaos in semiconductor superlattices

The chaotic behavior of high-field transport in weakly-coupled narrow-miniband GaAs/AlAs superlattices (SL) under ac + dc biases has been numerically studied within a self-consistent discrete model. It is shown that the regions of entrainment and quasiperiodicity form the Arnol'd tongues on the driving frequency–driving amplitude parameter plane. Chaos is demonstrated to appear at the boundaries of the tongues and in the regions where they overlap. Numerical simulation shows that ac driving can lead to chaos for different regimes: (i) when the electric-field domains in the SL are stable; and (ii) when they are unstable (periodically oscillating).