Characterization of ion species of silicon oxide films using positive and negative secondary ion mass spectra

Secondary ion species of silicon oxide films have been investigated using time-of-flight secondary ion mass spectrometry (TOF-SIMS). Characterization of thermally grown SiO₂ films on silicon has been performed. A diagram showing secondary ion spectra of SiO₂ films in both positive and negative polarities indicates the pattern of change in polarities and intensities of ion species from SiO⁺ to Si₅O₁₁⁻. The ions mostly change from positive to negative polarity between Si_nO_2n−1 and Si_nO_2n. Ion peaks with the strongest intensities in the respective cluster ions correspond to the Si_nO_2n+1 negative ion. Intensities of ion species of Si_nO_2n+2 appear negligibly small. Ion species of Si₃O⁺, Si₃O₂⁺ and Si₃O₃⁺ have been found at the interface between silicon and SiO₂ films. The intensity patterns of these ion species compared to those of SiO₂ films indicate that most of these species are not emitted from the SiO₂ films, but likely from the SiO structures.     

Secondary ion species containing nitrogen atoms from plasma-enhanced chemical vapor deposited silicon oxide films on silicon

Secondary ion species from plasma-enhanced chemical vapor deposited (PECVD) SiO₂ films have been investigated using time-of-flight secondary ion mass spectrometry (TOF-SIMS). Comparative studies of PECVD SiO₂ films prepared using a mixture of SiH₄/N₂O reaction gas at 400 °C with thermally oxidized SiO₂ films grown at 900 °C were carried out in the mid-range mass spectra from 95 to 165 amu. Small amounts of ion species containing nitrogen atoms, including Si₂O₂N⁺, Si₃O₂N⁺and Si₃O₃N⁺, were detected in the SiO₂ bulk from the PECVD SiO₂ films. Furthermore, large amounts of Si₃O₂N⁺ and Si₂O₃N⁻ were found at the interface between silicon and the SiO₂ films. Depth analysis showed that the intensity peak shapes of these ion species containing nitrogen atoms at the interface were closely coincident with those of Si₃O₃⁺ corrected by subtracting the influence of the SiO₂ matrix. The variation in the spectra of these ion species clearly indicates that two types of structures of oxynitride exist for the PECVD SiO₂ films in the SiO₂ bulk films and at the interface. These are likely produced by the reaction of reactive gas with SiO₂ and silicon surfaces where dangling bonds of silicon may exist in the different form.     

Embedded structure of silicon monoxide in SiO2 films

The structure of SiO_x (x = 1.94) films has been investigated using both X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS). The SiO_x films were deposited by vacuum evaporation. XPS spectra show that SiO_1.94 films are composed of silicon suboxides and the SiO₂ matrix. Silicon clusters appeared only negligibly in the films in the XPS spectra. Si₃O⁺ ion species were found in the TOF-SIMS spectra with strong intensity. These results reveal the structure of the films to be silicon monoxide embedded in SiO₂, and this structure most likely exists as a predominant form of Si₃O₄. The existence of Si-Si structures in the SiO₂ matrix will give rise to dense parts in loose glass networks.     

TOF-SIMS 5 instrument sensitivity to matrix elements in GeSi Layers: Analysis based on recording of complex secondary ions

Ge _x Si_{1 − x} layers are investigated by means of secondary ion mass spectrometry (SIMS). Experimental results obtained with the use of a TOF-SIMS 5 instrument are presented. To surmount the so-called matrix effect, SIMS analysis is performed by using complex secondary ions: Ge₂⁻, CsGe⁺, and Cs₂Ge⁺.     

Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation

The chemical and phase compositions of silicon oxide films with self-assembled nanoclusters prepared by ion implantation of carbon into SiO _x (x < 2) suboxide films with subsequent annealing in a nitrogen atmosphere have been investigated using X-ray photoelectron spectroscopy in combination with depth profiling by ion sputtering. It has been found that the relative concentration of oxygen in the maximum of the distribution of implanted carbon atoms is decreased, whereas the relative concentration of silicon remains almost identical over the depth in the layer containing the implanted carbon. The in-depth distributions of carbon and silicon in different chemical states have been determined. In the regions adjacent to the layer with a maximum carbon content, the annealing results in the formation of silicon oxide layers, which are close in composition to SiO₂ and contain silicon nanocrystals, whereas the implanted layer, in addition to the SiO₂ phase, contains silicon oxide species Si²⁺ and Si³⁺ with stoichiometric formulas SiO and Si₂O₃, respectively. The film contains carbon in the form of SiC and elemental carbon phases. The lower limit of the average size of silicon nanoclusters has been estimated as ∼2 nm. The photoluminescence spectra of the films have been interpreted using the obtained results.     

Analysis of intensities of positive and negative ion species from silicon dioxide films using time-of-flight secondary ion mass spectrometry and electronegativity of fragments

Intensities of positive and negative ion species emitted from thermally oxidized and plasma-enhanced chemical vapor deposited (PECVD) SiO₂ films were analyzed using time-of-flight secondary ion mass spectrometry (TOF-SIMS) and the Saha-Boltzmann equation. Intensities of positive and negative secondary ion species were normalized to those of ²⁸Si⁺ and ²⁸Si⁻ ions, respectively, and an effective temperature of approximately (7.2 ± 0.1) × 10³ K of the sputtered region bombarded with pulsed 22 kV Au₃⁺ primary ions was determined. Intensity spectra showed polarity dependence on both n and m values of Si_nO_m fragments, and a slight shift to negative polarity for PECVD SiO₂ compared to thermally oxidized SiO₂ films. By dividing the intensity ratios of negative-to-positive ions for PECVD SiO₂ by those for thermally oxidized SiO₂ films to cancel statistical factors, the difference in absolute electronegativity (half the sum of ionization potential and electron affinity of fragments) between both films was obtained. An increase in electronegativity for SiO_m (m = 1, 2) and Si₂O_m (m = 1-4) fragments for PECVD SiO₂ films compared to thermally oxidized films was obtained to be 0.1-0.2 Pauling units, indicating a more covalent nature of Si-O bonds for PECVD SiO₂ films compared to the thermally oxidized SiO₂ films.     

Preparation and optical properties of Ce activated (Ca1 − x,Srx)Al2Si2O8 phosphors

(Ca_1 − x, Sr_x)Al₂Si₂O₈:0.06Ce³⁺, M⁺ (M⁺ = Li⁺, Na⁺, K⁺) phosphors have been prepared by conventional solid-state reaction method. The structural and optical properties of the phosphors were characterized by X-ray diffraction (XRD) technique and spectrophotometer, respectively. A regular variation was found among the XRD patterns of (Ca_1 − x, Sr_x)Al₂Si₂O₈:0.06Ce³⁺ phosphors based on the changing of Sr content. With the increase of Sr content, the maximum of emission band presented slight blue shifts (~ 15 nm). The luminescence intensity of CaAl₂Si₂O₈:0.06Ce³⁺ and SrAl₂Si₂O₈:0.06Ce³⁺ were significantly enhanced when K⁺ and Li⁺ were incorporated, respectively.     

Positive secondary Ion emission from Si1−xGex bombarded by O2

The positive secondary ion yields of B⁺ (dopant), Si⁺ and Ge⁺ were measured for Si_1−xGe_x (0 ≤ x ≤ 1) sputtered by 5.5 keV ¹⁶O₂⁺ and ¹⁸O₂⁺. It is found that the useful yields of Ge⁺ and B⁺ suddenly drop by one order of magnitude by varying the elemental composition x from 0.9 to 1 (pure Ge). In order to clarify the role of oxygen located near surface regions, we determined the depth profiles of ¹⁸O by nuclear resonant reaction analysis (NRA: ¹⁸O(p,α)¹⁵N) and medium energy ion scattering (MEIS) spectrometry. Based on the useful yields of B⁺, Si⁺ and Ge⁺ dependent on x together with the elemental depth profiles determined by NRA and MEIS, we propose a probable surface structure formed by 5.5 keV O₂⁺ irradiation.     

Time evolution of the infrared laser ablation plasma plume of SiO

The spatio-temporal evolution of the silicon monoxide SiO plasma produced by a high-power CO₂ pulsed laser has been investigated using optical emission spectroscopy (OES) and imaging methods. The formed plasma was found to be strongly ionized, yielding Si⁺, O⁺, Si²⁺, O²⁺ and Si³⁺ species, rich in neutral silicon and oxygen atoms, and very weak molecular bands of SiO time-integrated and time-resolved two-dimensional OES plasma profiles were recorded as a function of emitted wavelength and distance from the target. The temporal behavior of specific emission lines of Si, Si⁺, O⁺, Si²⁺ and O²⁺ was characterized. The results show a faster decay of O²⁺ and Si²⁺ than that of O⁺, Si⁺ and Si. The Stark broadening of isolated single-ionized silicon emission lines was employed for deducing the electron density during the plasma expansion. The relative intensities of two Si²⁺ lines were used to calculate the time evolution of the plasma temperature.     

Effect of residual oxygen on ionization processes of Si and Si sputtered from Si(1 1 1)-7 × 7 surface

The effect of residual oxygen impurity on ionization processes of Si⁺ and Si²⁺ has been studied quantitatively. In this study, ion sputtering experiments were carried out for a Si(1 1 1)-7 × 7 surface, irradiated with 9-11 keV Ar⁰ and Kr⁰ beam. Even if the oxygen concentration is less than the detection limit of Auger electron spectrometry, SiO⁺ and SiO₂⁺ ions have been appreciably observed. Moreover, as the SiO⁺ and SiO₂⁺ yields increases, the Si⁺ yield is slightly enhanced, whereas the Si²⁺ yield is significantly reduced. From the incidence angle dependence of secondary ion yields, it is confirmed that Si⁺* (Si⁺ with a 2p hole) created in the shallow region from the surface exclusively contributes to Si²⁺ formation. By assuming that the SiO⁺ and SiO₂⁺ yields are proportional to the residual oxygen concentration, these observations are reasonably explained: The increase of Si⁺ with the increase of residual oxygen is caused by a similar effect commonly observed for oxidized surfaces. The decrease of Si²⁺ yield can be explained by the inter-atomic Auger transition between the residual oxygen impurity and Si⁺*, which efficiently interferes the Si²⁺ formation process.     

Infrared and auger spectra of dysprosium silicate films

Dysprosium silicate films, Dy _x Si _y O _z , have been investigated using infrared (IR) and Auger spectroscopy. The films have been formed by oxidizing dysprosium metal films on 5.2-nm-thick silicon dioxide films at a temperature of 600°C. It is shown that the composition of the Dy _x Si _y O _z dysprosium silicate films is close to that of dysprosium pyrosilicate, Dy₂Si₂O₇, and irregular in thickness. On going from the film outer surface to the silicon substrate, the amount of dysprosium decreases and that of silicon bound to oxygen increases. Silicon dioxide, SiO₂, predominates in the layer composition near the silicon substrate. The dielectric leakage current density in the accumulation mode is one order of magnitude lower in the Dy _x Si _y O _z films than in the SiO₂ films of the same equivalent thickness due to the larger physical thickness of the former.     

Temperature dependence of compositional changes of SiO2 surface during ion and electron bombardment

The influence of ion (Ar⁺ 0.5 keV, 2 microA/cm²) and electron (2 keV, 2 mA/cm²) bombardment on the elemental composition of SiO₂ was investigated in the temperature range of 270–790 K. Elemental composition was controlled by AES. It was found that both ion and electron bombardment resulted in an increasing amount of Si₉₂ (elemental silicon) and in decreasing amounts of both O₅₁₀ and Si₇₈ (silicon bound to oxygen). The temperature influence on the composition of SiO₂ is negligible under ion bombardment while the amount of Si₉₂ strongly increases under electron bombardment at temperatures exceeding 600 K. The mechanism of temperature dependence is discussed.     

NMR study of Li+-ion diffusion in the solid solution Li3+x(P1−x,Six)O4> with the γII-Li3PO4 structure

Diffusive motion of a Li⁺ ion in the solid solution of Li₃+x(P₁?x, Si_x)O₄ (0?x?0.4) with the γ_II-Li₃PO₄ structure was studied by the measurement of the ⁷Li spin-lattice relaxation time. The observed motion was a local motion instead of a long-range one. In comparison with the previous study on the solid solution of Li₄?x(P_x, Si₁?x)O₄ with the Li₄SiO₄ structure, it is noticeable that the activation energy is low and almost independent of the composition and that the attempt frequency is smaller in this phase. These characteristics were attributed to the availability of a large interstitial void in the γ_II-Li₃PO₄ structure. The low values of activation energy for the Li⁺ ionic conduction may be explained on the same basis.     

大气等离子体中氮氧化物粒子行为的数值模拟

利用一个空间零维大气等离子体模型对其中的氮氧化物在不同电离度情况下的变化规律进行了数值模拟,得到了放电后不同初始电子密度下的氮氧化物(包括NO,NO⁺,NO₂,NO₂⁺,N₂O,N₂O⁺,NO₃和N₂O₅)及影响其产消的主要反应物N和O₃的密度随时间的演化规律.结果表明,电子初始密度n_e0=10⁹ cm^-3时,NO和NO₂的去除率较高,氮氧化物总密度较小,最适合消除氮氧化物污染.同时,还对N和O₃随电离度变化的行为进行了分析. 关键词： 大气等离子体 氮氧化物 电离度 数值模拟     

Formation and photodecomposition of cationic titanium oxide clusters

In this paper we report on the titanium oxide cluster cations Ti _x O _y ⁺, generated by laser ablation of a titanium target in the region of the nozzle expansion of oxygen. The mass distribution of the clusters produced is recorded with a time-of-flight mass spectrometer. Three different series, namely TiO(TiO₂) _n ⁺ , TiO(TiO₂) _n O₂⁺, and (TiO₂) _n ⁺, appear in the spectra. Two different ablation wavelengths (infrared at 1064 nm and ultraviolet at 308 nm) are used to generate the titanium oxide clusters. At the shorter wavelength the maximum size of the clusters formed decreases. The interaction of the UV photons with the Ti _x O _y ⁺ clusters is further investigated in a separate two-laser arrangement with an IR laser for ablation and after some mm downstream with an UV system for the cluster beam irradiation. These studies indicate that the intensity of the T _x O _y ⁺ clusters with x≥4, y≥7 is strongly influenced by the absorption of UV photons. This is attributed mainly to dissociation into smaller ones.     

Secondary ion emission from silicon and silicon oxide

The emission of Si⁺, Si²⁺, Si³⁺, Si₂⁺, SiO⁺ and B⁺ from boron doped silicon has been studied at oxygen partial pressures between 2 × 10^?10 and 2 × 10^?5 Torr. Sputtering was done with 2 to 15 keV argon ions at current densities between 3 and $\text{40}\text{μ}\text{A}\text{cm}{}^2$. The relative importance of the different ionization processes could be deduced from a detailed study of the yield variation at varying bombardment conditions. Comparison with secondary ion emission from silicon dioxide allows a rough determination of the composition of oxygen saturated silicon surfaces.     

Simulation of the electronic structure of simple oxides BeO and SiO2 and complex oxides Be2SiO4 and Be2SixGe1 ? xO4 with the phenacite structure

The ab initio numerical calculations of the electronic structure of simple oxides BeO and SiO₂ and complex oxides Be₂SiO₄ and Be₂Si _x Ge_{1 − x} O₄ with the phenacite structure have been performed using the electron density functional theory. The calculations indicate that the main feature of the systems under investigation is the presence of oxygen states in both the valence and conduction bands. The splitting of the bottom of the conduction band has been revealed in the electronic structure of the Be₂Si _x Ge_{1 − x} O₄ system. The splitting width is about 1.5 eV. The main contribution to the formation of a narrow subband of the conduction band comes from the 2s and 2p states of oxygen and the 4d state of germanium. Microscopic models of the spatial localization of the electron density on lower energy states of the conduction band of oxide crystals have been developed using the Wannier function technique. The reflection spectra of BeO, SiO₂, and Be₂SiO₄ have been analyzed. The reported calculations of the electronic structure imply the exciton nature of the 9.7-eV reflection peak in the Be₂SiO₄ crystal.     

Secondary ion emission under the bombardment of Si by multiply charged Si q+ ions

The spectra of secondary ion emission under the bombardment of a B-doped Si target by multiply charged Si ^q+ ions (q = 1?C5) have been studied in the energy range of 1 to 10 keV per unit of charge. A multifold increase in the yield of secondary cluster Sk _n ⁺ ions, multiply charged Si ^q/+ ion (q = 1?C3), and H⁺, C⁺, B⁺, Si₂N⁺, Si₂O⁺ is observed as the charge of the multiply charged ions increases. The increase in the yield of secondary ions with increasing charge of the multiply charged-ion charge is most significant for ions with relatively high ionization potentials.     

Specific features of steady-state implantation of crystalline silicon with a molecular oxygen-nitrogen beam: Si <Emphasis Type="Italic">L</Emphasis><Subscript>2, 3</Subscript> x-ray emission spectra

The local electronic structure of 〈111〉 n-silicon single-crystal samples is studied using Si L _{2, 3} x-ray emission spectroscopy. The Si _x O _y N _z system is formed by implanting the samples with an ¹⁶O ₂ ⁺ and ¹⁴N ₂ ⁺ ion molecular beam (the oxygen/nitrogen ratio in the molecular beam is 1:1, the implantation energy is 30 keV, the irradiation fluences vary from 2.0 × 10¹⁷ to 1.5 × 10¹⁸ cm^?2, the samples after the implantation are subjected to rapid thermal annealing in nitrogen at 800°C for 5 min). A comparison of the recorded Si L spectra with the spectra of the reference samples reveals clear correlations between the specific features of the electronic structure of the silicon oxynitride formed upon implantation and the ion fluence. It is shown that the implantation at fluences of 2 × 10¹⁷ and 1 × 10¹⁸ cm^?2 results in the predominant formation of Si₃N₄, whereas the implantation at a fluence of 1.5 × 10¹⁸ cm^?2 leads primarily to the formation of SiO₂ layers in single-crystal silicon. The most probable factors and mechanisms accounting for such implantation of ¹⁶O ₂ ⁺ and ¹⁴N ₂ ⁺ into the samples under study are discussed. The experimental data obtained are compared with ab initio full-potential linearized augmented plane wave calculations of the band structure.     

Formation of interfacial iron silicides on the oxidized silicon surface during solid-phase epitaxy

The early stages of iron silicide formation in the Fe/SiO _x /Si(100) ternary system during solid-phase epitaxy are studied by high-resolution (～100 meV) photoelectron spectroscopy using synchrotron radiation. The spectra of core and valence electrons taken after a number of isochronous heat treatments of the samples at 750°C are analyzed. It is found that the solid-phase reaction between Fe and Si atoms proceeds in the vicinity of the SiO _x /Si interface, which metal atoms reach when deposited on the sample surface at room temperature. Iron silicide starts forming at 60°C. Solid-phase synthesis is shown to proceed in two stages: the formation of the metastable FeSi interfacial phase with a CsCl-like structure and the formation of the stable β-FeSi₂ phase. During annealing, structural modification of the silicon oxide occurs, which shows up in the growth of the Si⁺⁴ peaks and attenuation of the Si⁺² peaks.