Reconfigurable all-optical dual-directional half-subtractor for high-speed differential phase shift keying signal based on semiconductor optical amplifiers

All-optical digital logic elementary circuits are the building blocks of many important computational operations in future high-speed all-optical networks and computing systems. Multifunctional and reconfigurable logic units are essential in this respect. Employing the demodulation properties of delay interferometers for input differential phase shift keying signals and the gain saturation effect in two parallel semiconductor optical amplifiers, a novel design of 40 Gbit/s reconfigurable all-optical dual-directional half-subtractor is proposed and demonstrated. All output logic results show that the scheme achieves over 11=dB extinction ratio, clear and wide open eye diagram, as well as low polarization dependence (< 1 dB), without using any additional input light beam. The scheme may provide a promising candidate for future ultrafast all-optical signal processing applications.     

All-optical logic gates based on two-photon absorption in semiconductor optical amplifiers

When the two-photon absorption of a high intensity pump beam takes place in a semiconductor optical amplifier there is an associated fast phase change of a weak probe signal. A scheme to realize fast all-optical XOR logic function using two-photon absorption induced phase change has been analyzed. Rate equations for semiconductor optical amplifiers, for input data signals with high intensity, configured in the form of a Mach–Zehnder interferometer has been solved. The input intensities are high enough so that the two-photon induced phase change is larger than the regular gain induced phase change. The model shows that both XOR operation and pseudo-random binary sequence generation at 250 Gb/s with good signal to noise ratio is feasible.     

All-optical NOT and XOR logic operation at 2.5 Gb／s based on semiconductor optical amplifier loop mirror

All-optical XOR and NOT logic operations based on semiconductor optical amplifier loop mirror (SLALOM) aresimultaneously demonstrated theoretically and experimentally. Based on a segmented semiconductor optical amplifier model, the all-optical logic operation process is simulated theoretically. In an experimental study, 2.5 Gb/s all-optical XOR operation was achieved in the output port of SLALOM, while all-optical NOT operation was achieved in the input port through a circulator at the same time.     

All-optical XNOR and AND gates simultaneously realized in a single semiconductor optical amplifier with improved dynamics

All-optical XNOR and AND logic gates using four-wave mixing (FWM) and cross-gain modulation (XGM) in a single semiconductor optical amplifier (SOA) with improved dynamics are simultaneously realized. By numerical simulation, the effects of the input optical wave powers and injection current on the critical factors of the logic gate performances, such as the ON--OFF contrast ratio, the power-output level of the logic `1', and the difference between power outputs of the logic `1', are investigated in detail. In addition, the effect of the counter-propagating CW pump on the gain recovery is analysed.     

基于单个半导体光放大器的高速多功能逻辑门

采用半导体光放大器(SOA)中的非线性效应可以实现多种多样的高速全光信号处理. 利用SOA的非线性效应(包括四波混频、交叉增益调制、瞬态交叉相位调制等)实现了多种功能的逻辑运算,包括“与”、“或非”、“同或”、“或”和“非”. 由于SOA用于全光信号处理的调制速率受到增益恢复时间较慢的限制而无法实现高速的信号处理,在SOA后面级联一个带宽为0.32nm的失谐滤波器可以提高SOA的工作速率,仅用一个SOA实现了40Gbit/s的多功能逻辑门. 关键词： 半导体光放大器 全光逻辑门 瞬态交叉相位调制     

Analytical and simulative studies on optical NOR and controlled NOR logic gates with semiconductor optical amplifier

Semiconductor optical amplifier (SOA) is used for different successful frequency based switching operations. In this paper the authors describe the simulation study of the performances of SOA in various optical switches like frequency conversion, add-drop multiplexer and frequency encoded optical NOR gate, which is one the most important gates in logic family as it is known as one of the universal logic gates. Again, the controlled optical NOR logic operation with semiconductor optical amplifier is also proposed in this paper.     

基于半导体光放大器和非线性光纤环镜的光脉冲压缩器的设计模型和理论分析

提出了一个基于半导体光放大器和级联的非线性光纤环镜（NOLM）相结合的光脉冲压缩器的设计模型.数值研究结果表明：通过合理选取NOLM的长度，利用该模型可将皮秒光脉冲压缩为无基座飞秒光脉冲. 关键词： 半导体光放大器 非线性光纤环镜 光脉冲压缩     

All-optical integrated logic gates based on intensity-dependent transverse modal coupling

We present a study of the spatial propagation of light in a third order planar step-index waveguide with a transverse parabolic width film. By using the Lagrangian formalism, the width and phase evolution of a Gaussian beam has been completely described showing both the refractive contributions of the lens-like waveguiding geometry and self-focusing nonlinearity. As a result of this study, we have proposed the design of a new kind of integrated all-optical devices which, by means of the spatial beam power modulation and its influence on the transverse modal coupling can operate as phase-insensitive AND, OR and XOR logic gates.     

基于PolSK调制的四波混频型超快全光译码器

提出了一种新型的基于半导体光放大器（semiconductor optical amplifier, SOA）中四波混频（four-wave mixing, FWM）效应的超快全光译码器方案,方案中采用了偏振移位键控（polarization-shift-keying, PolSK）信号光.考虑SOA的偏振相关性,建立了这种全光译码器完整的偏振相关宽带理论模型.通过数值模拟的方法,从理论上实现了超快全光译码器,并研究了两输入信号光功率、SOA注入电流和SOA的偏振相关性对全光译码器输出特性的影响. 关键词： 全光译码器 偏振移位键控 四波混频 半导体光放大器     

集成双波导半导体光放大器光开关实现波长转换的理论研究

建立了基于集成双波导半导体光放大器的光开关(ITG-SOA-Switch)的理论分析模型.与半导体光放大器(SOA)的特性相比较表明，由于ITG-SOA-Switch合并了多种物理效应，故其静态增益饱和曲线在饱和功率点附近具有大幅度陡峭下降的独特性质.理论分析和10 Gbit/s波长转换模拟结果显示，恰当地选择输入抽运光的功率范围，ITG-SOA-Switch波长转换器输出转换光的消光比特性较之输入抽运光会有显著的改善. 关键词： 波长转换 半导体光放大器 集成双波导半导体光放大器 光开关     

Novel effects in extremely broadband semiconductor optical amplifiers with non-identical quantum wells

An extremely broad emission spectrum is obtained for semiconductor optical amplifiers with multiple quantum wells fabricated on the substrate. The spectral width is nearly 400 nm (1200–1600 nm), which covers the entire usable bandwidth of an optical fiber. Broadband characteristics allow observing three novel effects: (i) the bi-directional guided effect of lasing mode in a bent waveguide of semiconductor optical amplifiers, (ii) the optical switching effect in one semiconductor optical amplifier for optical communication band, and (iii) the effect of separate confinement heterostructure layer thickness.     

半导体光放大器中光波传输特性研究

根据半导体光放大器(SOA)载流子速率方程和光波在SOA内的传输方程,采用分段的方法计算出光波功率和相位与载流子浓度的关系公式。在泵浦光输入功率分别为5mW和15mW情况下通过仿真得到泵浦光输出波形和归一化转换光波形,其中归一化转换光的波形变化可间接体现不同泵浦光输入功率对SOA内载流子浓度的影响。分析了泵浦光波长和SOA注入电流对探测光的归一化输出、相位和频率啁啾产生的影响。结果表明,随着泵浦光波长的增加,探测光的三种光波特性曲线逐渐趋于平缓。注入电流将会直接影响到SOA的载流子浓度,以此对探测光的输出产生影响,注入电流越大,探测光的频率漂移越远。     

Small-signal analysis of two cascaded semiconductor optical amplifiers in a counterpropagating configuration

In this work, we present a small-signal analysis which reveals its usefulness to explain the evolution of the optical frequency responses obtained at the outputs of two-cascaded semiconductor optical amplifiers (SOAs) used in a counterpropagating configuration (TC-SOA-CC). To obtained these responses, the TC-SOA-CC configuration has been implemented on an electric simulator and we have used for each SOA a multisection rate equation based model. This model permits us to study both the static and dynamic behavior of the TC-SOA-CC optical outputs in the context of bidirectional transmission. Thanks to this model, we can also obtain the evolution of the carrier lifetimes in each SOA in order to determinate their influence on the optical frequency responses. The small-signal responses derived from our small-signal analysis are given as a function of the intrinsic parameters and for each specific situation for the value of the average injected optical power. This small-signal analysis is used to comment the behavior of the frequency responses obtained by simulation at the TC-SOA-CC optical outputs. Thanks to our small-signal analysis, we explain why for such a configuration, the features of the frequency responses obtained at the SOAs optical outputs can change from a low-pass, to a high-pass, and/or to a band-pass form by varying the average injected optical powers in the SOAs.     

半导体光放大器超快折射率变化动态特性的研究

建立了分析半导体光放大器（SOA）飞秒量级超快动态特性的数值模型,考虑了增益色散以及群速度色散,能更精确地反映飞秒级超短脉冲经过SOA时的传输特性.基于该模型,可以分析由载流子密度脉动以及载流子加热对折射率变化的影响.同时,也考虑了不同的工作条件以及SOA的结构参数对折射率的影响.理论分析和模拟实验为优化SOA的结构、改善SOA飞秒量级超高速动态特性提供了理论指导. 关键词： 半导体光放大器 折射率动态特性 增益色散 群速度色散     

基于相向工作方式下交叉增益调制型波长转换器特性的研究

全光波长转换器是密集波分复用系统中的关键光电子器件,也是混合WDM/OTDM光网络实用化的关键部分。从脉冲传输方程和载流子密度方程出发,详细分析了相向工作方式下交叉增益调制型波长转换器转换后光的消光比和啁啾特性。在分段动态模型中考虑了剩余端面反射和自发辐射噪声的影响,模拟结果为交叉增益调制型波长转换器的性能优化提供理论依据。     

All optical logic NAND gate based on two-photon absorption in semiconductor optical amplifiers

We propose a new scheme to realize all optical logic NAND operating at high speeds up to 250 Gb/s utilizing the ultrafast phase response during two-photon absorption (TPA) process in semiconductor optical amplifiers (SOA). NAND gate is important because other Boolean logic elements and circuits can be realized using NAND gates as basic building blocks. Rate equations for semiconductor optical amplifiers (for input data signals with high intensity) configured in the form of a Mach-Zehnder interferometer have been solved. The input intensities are high enough so that the two-photon induced phase change is larger than the regular gain induced phase change. The performance of this scheme is analyzed by calculating the quality factor of the resulting data streams. The results show that both AND and NAND operations at 250 Gb/s with good signal to noise ratio are feasible.     

基于半导体材料微纳波导全光逻辑门的研究进展

全光逻辑门是全光计算以及全光信号处理系统中关键的光子器件.随着互补金属氧化物半导体(COMS)工艺的发展,基于半导体材料微纳波导全光逻辑门已经成为集成光学领域中的重要方向;尤其是硅基光子集成器件在近些年成为了国际研究热点.文章主要对基于绝缘体上的硅(SOD)和Ⅲ-Ⅴ族化合物材料不同波导结构(马赫-曾德尔干涉仪(Mach-Zehnder interferometer)微环谐振腔和条形波导结构)的全光逻辑门的研究进展进行了介绍,并且在器件的工作速率和功耗方面,分别对上述基于SOI和Ⅲ-Ⅴ族化合物材料三种不同波导结构的全光逻辑门进行了分析和比较.     

金属有机化学气相外延生长1310nm偏振无关混合应变量子阱半导体光放大器研究

采用低压金属有机化学气相外延设备进行了1.3μm压应变量子阱材料、张应变量子阱材料和混合应变量子阱材料的生长研究.通过x射线双晶衍射和光致发光谱对生长材料进行测试和分析.基于四个压应变量子阱和三个张应变量子阱交替生长的混合应变量子阱（4CW3TW）结构有源区，并采用7°斜腔脊型波导结构以有效抑制腔面反射，经蒸镀减反膜后，半导体光放大器光纤光纤小信号增益达21.5dB，在1280—1340nm波长范围内偏振灵敏度小于0.6dB. 关键词： 偏振无关 应变量子阱 半导体光放大器 减反膜     

基于半导体材料微纳波导全光逻辑门的研究进展

全光逻辑门是全光计算以及全光信号处理系统中关键的光子器件.随着互补金属氧化物半导体(CMOS)工艺的发展,基于半导体材料微纳波导全光逻辑门已经成为集成光学领域中的重要方向;尤其是硅基光子集成器件在近些年成为了国际研究热点.文章主要对基于绝缘体上的硅(SOI)和Ⅲ-Ⅴ族化合物材料不同波导结构（马赫-曾德尔干涉仪(Mach-Zehnder interferometer)微环谐振腔和条形波导结构）的全光逻辑门的研究进展进行了介绍,并且在器件的工作速率和功耗方面,分别对上述基于SOI和Ⅲ-Ⅴ族化合物材料三种不同波导结构的全光逻辑门进行了分析和比较.