Influence of seed layer orientation on the growth and physical properties of SnS nanostructures

Stoichiometric tin (II) sulfide (SnS) nanostructures were synthesized on SnS(010)/glass substrates using a simple and low-temperature chemical solution method, and their physical properties were investigated. The as-synthesized SnS nanostructures exhibited orthorhombic crystal structure and most of the nanocrystals are preferentially oriented along the <010> direction. These nanostructures showed p-type electrical conductivity and high electrical resistivity of 93 Ωcm. SnS nanostructures exhibited a direct optical band gap of 1.43 eV. While increasing the surrounding temperature from 20 to 150 °C, the electrical resistivity of the structures decreased and exhibited the activation energy of 0.28 eV.     

A Mössbauer investigation of SnO2 films with preferred orientation of crystallites

The textured SnO₂ films with different thickness in the range of 600–11200Å prepared by chemical vapour deposition (CVD) have been characterized by using conversion electron Mössbauer spectroscopy (CEMS) couping with X-ray diffraction (XRD) and Auger electron spectroscopy (AES). The evidence for the existence of an interaction between SnO₂ and glass substrate with the formation of a interface layer about 200Å thick has been discussed. SnO₂ existing in polycrystalline state with preferred crystal face orientation is found as long as the SnO₂ films are thick than 1800Å.     

Preparation of SnO2–graphene from SnS–graphene oxide for enhanced reversible lithium ion storage

SnO₂–graphene nanocomposites (SnO₂–GNS) have been prepared through a simple hydrothermal reaction with SnS–graphene oxide composites as the precursor. The composite material as prepared was characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, Brunauer–Emmett–Teller analysis, and thermogravimetric analysis. The results indicate that SnO₂ nanoparticles possess a good dispersion on the surface of graphene. Electrochemical tests demonstrate the high reversible lithium ion storage properties of SnO₂–GNS. The nanocomposites retained a reversible capacity of 503 mAh?g^?1 after 40 cycles. Moreover, the composite material exhibited higher capacity and better cyclic performance compared to free SnO₂ nanoparticles physically mixed with graphene in the relative weight ratio. The results suggest that the combination of SnO₂ and graphene leads to synergistic performance, which enhances lithium ion storage properties of the overall system.     

119Sn Mössbauer spectroscopy in nanocrystalline aluminat-in composites synthesized by direct grinding and reactive ball milling

Alumina-tin nanocomposites have been synthesized by direct grinding of -Al₂O₃--Sn powder mixtures, as well as by reactive milling of Al-SnO₂ mixtures. According to the preparation method used, the composites differ from one another mainly in the amount of a disordered SnO_x (x1.1) phase and in the structural characteristics of alumina.     

Synthesis and properties of Sn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Fe<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O<Subscript>2</Subscript> nanoparticles obtained by a proteic sol–gel method

Iron-doped SnO₂ nanoparticles with chemical formula Sn_1?xFe_xO_2?y (x =?0.02, 0.05 and 0.10 at%) were successfully produced by a proteic sol–gel method. Thermogravimetric analysis and differential scanning calorimetry were performed to investigate the thermal behavior of the precursor powders as well as to select the appropriate calcination temperatures for oxide formation. X-ray absorption near-edge spectroscopy studies were carried out to determine the valence state of the transition metal used as dopant. Structural, morphological, and optical properties of the synthesized materials were studied by X-ray diffraction, Mössbauer spectroscopy, transmission electron microscopy, Fourier-transform infrared spectroscopy, and ultraviolet-visible spectroscopy. The results confirmed the formation of nanometric spherical particles of single-phased SnO₂ with rutile-type tetragonal structure. Iron doping was accomplished in the form of Fe³⁺ substituting for Sn⁴⁺ in the SnO₂ matrix, with the creation of oxygen vacancies to achieve charge balance. Band gaps of SnO₂ were found to be unaffected by the introduction of iron.     

Study of Au/SnO x –Al2O3 catalysts used in CO oxidation by in situ Mössbauer spectroscopy

The active catalytic components in tin oxide containing alumina-supported gold catalyst were examined by comparing and analysing the in situ Mössbauer spectra of the SnO _x –Al₂O₃ support and the 3 wt.% Au/SnO _x –Al₂O₃ catalyst (1.1 wt.% Sn, Au/Sn = 3:2 atomic ratio). Samples were prepared by using organometallic precursor of ¹¹⁹SnMe₄ (enriched). First tin was grafted to the alumina surface from the organometallic precursor compound. In the next step the grafted complexes were decomposed in flowing oxygen. Gold was deposited onto the SnO _x –Al₂O₃ support in the subsequent step. Analysis of in situ spectra shows that in Au/SnO _x –Al₂O₃ catalyst after activation in hydrogen at 620 K tin may occur in three different oxidation states [Sn (IV), Sn(II) and Sn(0)] simultaneously. The metallic tin is a component of the bimetallic AuSn alloy phase. Data presented provide the first evidence for the formation of alloy-type supported Sn–Au catalyst on alumina. Furthermore, from the spectra recorded at different temperatures, values of the Debye temperatures and recoilless fractions were also determined for the various species. The results show that in catalytic oxidation of carbon monoxide at room temperature the dominant part of Sn(II) and the AuSn alloy is oxidized.     

Reactive pulsed laser deposition and laser induced crystallization of SnO2 transparent conducting thin films

Transparent conducting SnO₂ thin films with a thickness between 1000–2000 Å were deposited on glass, quartz and silicon substrates using standard pulsed laser deposition techniques with two different targets (Sri and SnO₂) and with three different laser wavelengths (1.06, 0.532 and 0.266 ) from a Q-switched Nd: YAG laser. Tin dioxide films with optical transmission over most of the visible spectrum exceeding 80% were obtained using a Sn target and a background oxygen pressure of 20 Pa. The electrical resistivity () depended strongly on the substrate temperature during deposition, with the lowest values of of about 10^–2 -cm obtained when the substrate was maintained at 400°C during deposition. Using SnO₂ targets, predominantly amorphous phase SnO₂ films were deposited on Si substrates and then transformed into polycrystalline Sn₃O₄ by laser induced crystallization ( = 1.06 m). Whereas these later films were essentially non-conducting as deposited ( > 400 -cm), the electrical resistivity was permanently reduced after laser induced crystallization by a factor greater than 1000 to a value of approximately 4 × 10^–1 -cm.     

Energy transfer from the host to Er<Superscript>3+</Superscript> dopants in semiconductor SnO<Subscript>2</Subscript> nanocrystals segregated in sol–gel silica glasses

Undoped and Er³⁺-doped glass–ceramics of composition (100−x)SiO₂–xSnO₂, with x = 5 or 10 and with 0.4 or 0.8 mol% of Er³⁺ ions, were synthesised by thermal treatment of precursor sol–gel glasses. Structural studies were developed by X-Ray Diffraction. Wide band gap SnO₂ semiconductor quantum-dots embedded in the insulator SiO₂ glass are obtained. The mean radius of the SnO₂ nanocrystals, ranging from 2 to 3.2 nm, is comparable to the exciton Bohr radius. The luminescence properties have been analysed as a function of sample composition and thermal treatment. The results show that Er³⁺ ions are partially partitioned into the nanocrystalline phase. An efficient UV excitation of the Er³⁺ ions by energy transfer from the SnO₂ nanocrystal host is observed. The Er³⁺ ions located in the SnO₂ nanocrystals are selectively excited by this energy transfer mechanism. On the other hand, emission from the Er³⁺ ions remaining in the silica glassy phase is obtained by direct excitation of these ions.     

Cation exchange dynamics confined in a synthetic clay mineral

In this work we report X-Ray Diffraction (XRD) and Energy Dispersive X-Ray Spectroscopy (EDS) measurements to investigate the confined cation exchange process in saline aqueous suspensions of a synthetic clay mineral from Lithium-Fluorohectorite to Nickel-Fluorohectorite, as well as the reverse process from Nickel-Fluorohectorite to Lithium-Fluorohectorite and also from Lithium-Fluorohectorite to Sodium-Fluorohectorite. The dynamics of these cation exchanges was followed and it was observed that these processes can be faster than 1 minute. The results are compared to the observations on samples prepared by cation exchange procedures for which the exchange process was performed on the time-scale of months.     

Low-temperature photoluminescence of ion-implanted SiO2:Sn+ films and glasses

Low-temperature photoluminescence spectroscopy with pulsed synchrotron excitation is applied to study the regularities of excitation and relaxation of both point defects and nanoparticles formed by tin implantation into SiO₂ films and glasses. It has been found that tin implantation followed by air and nitrogen annealing yields the formation of α-Sn nanoclusters and nonstoichiometric SnO _x nanoparticles, while a stable phase of SnO₂ does not appear. Alternative channels of luminescence excitation are revealed for nanoclusters, including energy transfer from excitons and electron-hole pairs of the host SiO₂ matrix.     

SnO2 nanowires mixed nanodendrites for high ethanol sensor response

Mixed morphology of SnO₂ nanowires and nanodendrites was synthesized on the gold-coated alumina substrates by carbothermal reduction of SnO₂ in closed crucible. The products were characterized by scanning electron microscopy, x-ray diffractometer, and transmission electron microscopy. Results showed the SnO₂ nanowires and the SnO₂ nanodendrites branched out from the main nanowires. Both SnO₂ nanostructures were pure tetragonal rutile structure. The nanowires were grown in [101] and directions with the diameter of 50–150 nm and the length of a few 10 μm. The nanodendrites were about 100–300 nm in diameter. The growth mechanism of the SnO₂ nanostructures was also discussed. Characterization of ethanol gas sensor, based on the mixed morphology of the SnO₂ nanostructures, was carried out. The optimal temperature was about 360 °C and the sensor response was 120 for 1000 ppm of ethanol concentration.     

Influence of CuO catalyst in the nanoscale range on SnO2 surface for H2S gas sensing applications

The dispersal of CuO catalyst on the surface of the semiconducting SnO₂ film is found to be of vital importance for improving the sensitivity and the response speed of a SnO₂ gas sensor for H₂S gas detection. Ultra-thin CuO islands (8 nm thin and 0.6 mm diameter) prepared by evaporating Cu through a mesh and subsequent oxidation yield a fast response speed and recovery. Ultimately nanoparticles of Cu (average size = 15 nm) prepared by a chemical technique using a reverse micelle method involving the reduction of Cu(NO₃)₂ by NaBH₄ exhibited significant improvement in the gas sensing characteristics of SnO₂ films. A fast response speed of ∼14 s and a recovery time of ∼60 s for trace level ∼20 ppm H₂S gas detection have been recorded. The sensor operating temperature (130° C) is low and the sensitivity (S = 2.06 × 10³) is high. It is found that the spreading over of CuO catalyst in the nanoscale range on the surface of SnO₂ allows effective removal of excess adsorbed oxygen from the uncovered SnO₂ surface due to spill over of hydrogen dissociated from the H₂S-CuO interaction.     

Design and assembly of ternary Pt/Re/SnO<Subscript>2</Subscript> NPs by controlling the zeta potential of individual Pt,Re, and SnO<Subscript>2</Subscript> NPs

In this study Pt, Re, and SnO₂ nanoparticles (NPs) were combined in a controlled manner into binary and ternary combinations for a possible application for ethanol oxidation. For this purpose, zeta potentials as a function of the pH of the individual NPs solutions were measured. In order to successfully combine the NPs into Pt/SnO₂ and Re/SnO₂ NPs, the solutions were mixed together at a pH guaranteeing opposite zeta potentials of the metal and oxide NPs. The individually synthesized NPs and their binary/ternary combinations were characterized by Fourier transform infrared spectroscopy (FTIR) and scanning transmission electron microscopy (STEM) combined with energy dispersive X-ray spectroscopy (EDS) analysis. FTIR and XPS spectroscopy showed that the individually synthesized Pt and Re NPs are metallic and the Sn component was oxidized to SnO₂. STEM showed that all NPs are well crystallized and the sizes of the Pt, Re, and SnO₂ NPs were 2.2, 1.0, and 3.4 nm, respectively. Moreover, EDS analysis confirmed the successful formation of binary Pt/SnO₂ and Re/SnO₂ NP, as well as ternary Pt/Re/SnO₂ NP combinations. This study shows that by controlling the zeta potential of individual metal and oxide NPs, it is possible to assemble them into binary and ternary combinations.

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Linewidth and auger effect in CaF2, SrF2, and BaF2

In BaF₂ crystals, the linewidth of certain core band-conduction band excitons shows strong temperature dependence, while the corresponding linewidths in CaF₂ and SrF₂ do not. Calculations of the broadening due to the temperature-independent Auger effect are in good agreement with experimental data.     

Direct conversion of a metal organic compound to epitaxial Sb-doped SnO2 film on a (0 0 1) TiO2 substrate using a KrF laser, and its resulting electrical properties

Epitaxial Sb-doped SnO₂ (0 0 1) thin film on a TiO₂ (0 0 1) substrate was successfully prepared by laser-assisted metal organic deposition at room temperature. The effects of the precursor thin film and laser fluence on the resistivity, carrier concentration, and mobility of the Sb-doped SnO₂ film were investigated. The resistivity of the Sb-doped SnO₂ film prepared by direct irradiation to metal organic film is one order of magnitude lower than that of film prepared by irradiation to amorphous Sb-doped SnO₂ film. From an analysis of Hall measurements, the difference between the resistivity of the Sb-doped SnO₂ film prepared using the metal organic precursor film and that of amorphous precursor film appears to be caused by the mobility. Direct conversion of the metal organic compound by excimer laser irradiation was found to be effective for preparing epitaxial Sb-doped SnO₂ film with low resistivity.     

Carbon-coated SnO2 nanobelts and nanoparticles by single catalytic step

Several types of carbon nanostructures (amorphous and graphitic), for the coating of SnO₂ nanobelts and nanoparticles were obtained by a single catalytic process, during methane, natural gas, and methanol decomposition using the reactivity of surface-modified SnO₂ nanostructure as a nanotemplate. The nanostructured catalyst templates were based on transition metal nanoparticles supported on SnO₂ nanobelts previously prepared by a carbothermal reduction process. Carbon-coated SnO₂ nanopowders were also successfully synthesized for the fabrication of carbon spheres. The carbon coating process and yield, along with the nature of the nanostructured carbon, are strongly influenced by the chemically modified surface of the SnO₂ nanostructure template and the chemical reaction gas composition. The preliminary catalytic activity and gas-sensing properties of these novel materials based on metal nanoparticles and carbon-coated SnO₂ were determined.     

Heat capacity of oxides in the Bi2O3-SiO2 system

The high-temperature heat capacity of Bi₄Si₃O₁₂, Bi₂SiO₅, and Bi₁₂SiO₂₀ has been investigated. It has been found that there is a correlation between the specific heat C _p ⁰ (298 K) and the composition of oxides in the Bi₂O₃-SiO₂ system.     

Size-dependent luminescence of Sm3+ doped SnO2 nano-particles dispersed in sol-gel silica glass

Sol-gel glasses with composition (100?x)SiO₂–xSnO₂ doped with 0.4 mol% of Sm³⁺, with x ranging from 1 to 10, have been successfully synthesized. Transparent doped nano-glass-ceramics were prepared by thermal treatment of the precursor glasses at 900°C during 4 hours, leading to nanocomposites comprising SnO₂ nanocrystals embedded into an amorphous SiO₂ phase. A structural analysis in terms of X-ray Diffraction and High Resolution Transmission Electron Microscopy confirms the precipitation of SnO₂ nanocrystals within the glassy matrix. The mean radius of the obtained SnO₂ nanocrystals, ranging from 2.1 to 4.7 nm calculated by the Scherrer and Brus equations, similar to the Bohr’s exciton radius, constitutes a wide band-gap semiconductor quantum-dot system. Energy transfer from SnO₂ nanocrystal host to Sm³⁺ ions is confirmed by luminescence spectra and analyzed as a function of SnO₂ concentration, showing an evolution that could be ascribed to selective excitation of nanocrystal sets with predetermined size. Besides, a study of the luminescence as a function of temperature helps to clarify the involved energy transfer mechanisms.     

Enhanced Conductivity and High Thermal Stability of W-Doped SnO<Subscript>2</Subscript> Based on First-Principle Calculations

Tungsten (W)-doped SnO₂ is investigated by first-principle calculations, with a view to understand the effect of doping on the lattice structure, thermal stability, conductivity, and optical transparency. Due to the slight difference in ionic radius as well as high thermal and chemical compatibility between the native element and the heterogeneous dopant, the doped system changes a little with different deviations in the lattice constant from Vegard’s law, and good thermal stability is observed as the doping level reaches x = 0.125 in Sn_1-x W _x O₂ compounds. Nevertheless, the large disparities in electron configuration and electronegativity between W and Sn atoms will dramatically modify the electronic structure and charge distribution of W-doped SnO₂, leading to a remarkable enhancement of conductivity, electron excitation in the low energy region, and the consequent optical properties, while the visible transparency of Sn_1-x W _x O₂ is still preserved. Particularly, it is found that the optimal photoelectric properties of W-doped SnO₂ may be achieved at x = 0.03. These observations are consistent with the experimental results available on the structural, thermal, electronic, and optical properties of Sn_1-x W _x O₂, thus presenting a practical way of tailoring the physical behaviors of SnO₂ through the doping technique.