Electronic properties of assembled islands of hydrogen-saturated silicon clusters on Si(111)-(7 x 7) surfaces studied by scanning tunneling spectroscopy

We present results of scanning tunneling spectroscopy (STS) measurements of hydrogen-saturated silicon clusters islands formed on Si(111)-( 7×7) surfaces. Nanometer-size islands of Si₆H₁₂ with a height of 0.2-4 nm were assembled with a scanning tunneling microscope (STM) using a tip-to-sample voltage larger than 3 V. STS spectra of Si₆H₁₂ cluster islands show characteristic peaks originating in resonance tunneling through discrete states of the clusters. The peak positions change little with island height, while the peak width shows a tendency of narrowing for the tall islands. The peak narrowing is interpreted as increase of lifetime of electron trapped at the cluster states. The lifetime was as short as 10^-13 s resulting from interaction with the dangling bonds of surface atoms, which prevents charge accumulation at the cluster islands. Received 30 November 2000     

Spatial imaging of valence band electronic structures in a GaSb/InAs quantum well

We measure local density of states (LDOS) for GaSb/InAs heterostructures with quantum wells in the valence band by scanning tunneling spectroscopy (STS) on the cleaved surface. Clear standingwave patterns of LDOS corresponding to the holes confined in the quantum wells are observed.     

Investigation of the Shockley surface state on clean and air-exposed Au (1 1 1)

Scanning tunneling microscopy (STM) and spectroscopy (STS) carried out in vacuum and air were used to study the electronic structure of the Au (1 1 1) surface in the range of 0.0-0.7 eV below the Fermi level. The STS experiment carried out in UHV showed the existence of the Shockley surface state (SS) located 0.48 eV below the Fermi level. STS carried out in air showed strong local maximum located 0.35 eV below the Fermi level. This maximum was ascribed to the SS shifted toward lower energy due to carbon and oxygen overlayer. To confirm that the SS could exist on the sample exposed to air we did ultraviolet photoemission spectroscopy (UPS) experiment on air-treated and clean Au (1 1 1). Our results suggest that the SS position initially measured at 0.38 eV below the Fermi level was shifted to 0.27 eV after air treatment. Additionally, the level of contamination was measured using X-ray photoelectron spectroscopy (XPS).     

Metal clusters on rare gas layers – growth and spectroscopy

Gold and lead clusters were grown by the evaporation of metal atoms on rare gas layers on Au(111) and Pb(111). The growth was investigated with scanning tunneling microscopy (STM) and ultraviolet photoelectron spectroscopy (UPS). We studied the electronic coupling to the surface and charging effects in the photoemission process. For a rare gas film thickness of 60 ML we observed an electronic decoupling: the cluster spectra are no longer referenced to the Fermi edge, but to the vacuum energy of the substrate. For Pb clusters on a Au(111) substrate this leads to the remarkable result of a cluster-photoelectron signal above the Fermi energy defined by the ground level of the sample holder. PACS 33.60.Cv; 36.40.Mr; 68.37.Ef; 61.46.+w; 73.22.-f     

Photoelectron spectroscopic characterization of titanium-containing amorphous hydrogenated silicon–carbon films (aSi1-xCx:H/Ti)

Titanium-containing amorphous hydrogenated silicon–carbon films (aSi_1-xC_x:H/Ti) have been deposited by reactive magnetron cosputtering. Core-level photoelectron spectroscopy (XPS) and valence-band photoelectron spectroscopy (UPS) have served as means for the characterization of these films. The spectroscopic data are interpreted by a structural model on the basis of a nanocomposite containing clusters of a Ti-C-Si alloy being embedded in an amorphous hydrogenated silicon–carbon matrix (aSi_1-xC_x:H). The Ti-C-Si compound is of metallic character and most likely a substitutional solid solution. This novel nanocomposite material is a promising candidate for applications, especially as optical selective absorber coating for solar collectors. Received: 10 July 2000 / Accepted: 15 September 2000 / Published online: 21 March 2001     

Structure and composition of the segregated Cu in V2O5/Cu system

We have investigated segregation of copper at the surface of V₂O₅ films deposited onto Cu substrate by employing surface analysis techniques. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) confirmed that the Cu is segregated at the surface and its chemical state is Cu₂O. According to secondary ion mass spectroscopy (SIMS) and glow discharge spectroscopy (GDS), the Cu concentration inside the deposited V₂O₅ layer is low. Ultraviolet photoelectron spectroscopy (UPS) and scanning tunneling spectroscopy (STS) revealed the segregation alters the surface local density of states. Surface analysis of deposited samples in ultra high vacuum (UHV) condition verified that the segregation occurs during the deposition. We have extended kinetic tight binding Ising model (KTBIM) to explain the surface segregation during the deposition. Simulation data approve the possibility of surface segregation during room temperature deposition. These results point out that on pure Cu substrate, oxidation occurs during the segregation and low surface energy of Cu₂O is the original cause of the segregation.     

Surface-state Stark shift in a scanning tunneling microscope

We report a quantitative low-temperature scanning tunneling spectroscopy (STS) study on the Ag(111) surface state over an unprecedented range of currents (50 pA to 6 microA) through which we can tune the electric field in the tunnel junction of the microscope. We show that in STS a sizable Stark effect causes a shift of the surface-state binding energy E0. Data taken are reproduced by a one-dimensional potential model calculation, and are found to yield a Stark-free energy E0 in agreement with recent state-of-the-art photoemission spectroscopy measurements.     

Spatial effects of Fano resonance in local tunneling conductivity in vicinity of impurity on semiconductor surface

We present the results of local tunneling conductivity spatial distribution detailed theoretical investigations in vicinity of impurity atom for a wide range of applied bias voltage. We observed Fano resonance in tunneling conductivity resulting from interference between resonant tunneling channel through impurity energy level and direct tunneling channel between the tunneling contact leads. We have found that interference between tunneling channels strongly modifies form of tunneling conductivity measured by the scanning tunneling microscopy/spectroscopy (STM/STS) depending on the distance value from the impurity.     

Scanning tunneling microscopy on self-assembled calix[4]resorcinarene monolayer adsorbates on Au(111)

Self-assembled Monolayers of calix[4]resorcinarene receptor molecules on Au(111) were studied by UHV scanning tunneling microscopy and X-ray photoelectron spectroscopy. Highly ordered monolayers were observed with domains oriented at an angle of 60° relative to each other. Molecularly resolved images were investigated and lattice constants found which depended on the preparation solvent. The STM images of two samples, one prepared in 1 mM chloroform/ethyl alcohol adsorbate solution and one in 1 mM hexane adsorbate solution are consistent with having a ×2 and 4×2 lattice, respectively. Received: 22 September 1999 / Accepted: 28 March 2000 / Published online: 11 May 2000     

Scanning tunneling lithography of silicon nanoparticle films

Monolayer and bi-layer silicon nanoparticle (SiNP) films with wide band gaps (up to 4 eV) have been produced in UHV with narrow size distributions of particles with 2-4 nm diameters and were studied using scanning tunneling microscopy (STM) and spectroscopy (STS). The films then were manipulated by applying different values for the tunneling resistance. Nanoparticle fusion and fission processes allow to shape the particles in the films in various ways and to write in white and black on the film template.     

Confined Shockley surface states on the (111) facets of gold clusters

Combining low-temperature scanning tunneling microscopy and spectroscopy with high-resolution ultraviolet photoemission, we have revealed a confined Shockley surface state on the (111) facets of gold clusters with about N=10(4) atoms grown in nanopits on highly oriented graphite. With tunneling spectroscopy, we observed energy dependent nodal patterns in the dI/dV maps, which are in quantitative agreement with the two-dimensional confinement of the surface state within the hexagonal facet area. The results indicate that the lattice of the ionic cores influences the electronic properties of the clusters significantly.     

Defects of SiC nanowires studied by STM and STS

For the first time the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) are employed to investigate the morphology and the surface electronic structure of the defective silicon carbide nanowires (SiCNWs). The SiCNWs produced via combustion synthesis route are studied. The STS measurements are performed in the current imaging tunneling spectroscopy mode (CITS) that allows us to determine the correlation between STM topography and the local density of electronic states (LDOS) around the bend of an isolated SiCNW. The measurements reveal fluctuations of LDOS in the vicinity of the defect. The local graphitisation and the inhomogeneous concentration of doping impurities (e.g. nitrogen, oxygen) are considered to explain these fluctuations of metallic-like LDOS in the vicinity of the SiCNW's deformation.     

Metallic nature of the alpha-Sn/Ge(111) surface down to 2.5 K

Low temperature (down to 2.5 K) scanning tunneling microscopy (STM) and spectroscopy (STS) measurements are presented to assess the nature of the alpha-Sn/Ge(111) surface. Bias-dependent STM and STS measurements have been used to demonstrate that such a surface preserves a metallic 3 x 3 reconstruction at very low temperature. A tip-surface interaction mechanism becomes active below about 20 K at the alpha-Sn/Ge(111) surface, resulting in an apparent unbuckled (sqrt[3] x sqrt[3]) reconstruction when filled states STM images are acquired with tunneling currents higher than 0.2 nA.     

Low-temperature STM/STS studies on boron-doped (1 1 1) diamond films

We have performed scanning tunneling microscopy/spectroscopy (STM/STS) experiments on (1 1 1)-oriented epitaxial films of heavily boron-doped diamond (T_c∼5.4 K). We present that tunneling conductance spectra show temperature-dependent spatial variations. In the low-temperature region (T=0.47 K), the tunneling spectra do not show strong spatial dependence and a superconducting energy gap is observed independent of the surface morphology. In the high-temperature region (T=4.2 K), on the other hand, the tunneling conductance spectra show significant spatial dependence, indicating the inhomogeneous distribution of the superconducting property due to the distribution of boron atoms.     

One-dimensional diffusion of vacancies on Sr/Si(100)-c(2×4) surface

An Sr/Si(100)-c(2×4) surface is investigated by high-resolution scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The semiconductor property of this surface is confirmed by STS. The STM images of this surface shows that it is bias-voltage dependent and an atomic resolution image can be obtained at an empty state under a bias voltage of 1.5 V. Furthermore, one-dimensional (1D) diffusion of vacancies can be found in the room-temperature STM images. Sr vacancies diffuse along the valley channels, which are constructed by silicon dimers in the surface. Weak interaction between Sr and silicon dimers, low metal coverage, surface vacancy, and energy of thermal fluctuation at room temperature all contribute to this 1D diffusion.     

利用STM和CV方法测定有机发光材料的能带参数

利用扫描隧道显微镜/扫描隧道谱(STM/STS)的技术,研究了有机发光材料Alq₃、DPN-2CN和DNP-2CN的表面电子结构。将材料DPN-2CN和DNP-2CN的表面电子结构与Alq₃的表面电子结构进行对比,判定了DPN-2CN和DNP-2CN的最低空轨道(LUMO)能级。通过电化学循环伏安(CV)法,对DPN-2CN和DNP-2CN的LUMO能级和最高占有轨道(HOMO)能级进行了表征。两种测试方法所得到的LUMO能级参数基本一致。     

The calculation of transition probabilities for atomic oxygen

In this contribution we present scanning tunnelling microscopy (STM) and spectroscopy (STS) investigations on isolated cobalt clusters in contact with Ge(001). Mass-filtered nanoparticles with diameters ranging from 3 to 11 nm are generated using an arc cluster ion source (ACIS) and deposited under soft landing conditions (E_kin/atom < 0.5 eV). Since the tip radius is of the same order as the nanoparticle diameters the recorded STM images are significantly affected by tip folding. By means of the “blind reconstruction method" it is possible to approximate the tip shape. After a respective deconvolution of the image structural features of the particle facets become observable. According to the equilibrium shape of the clusters being a truncated octahedron in the size range under investigation, hexagonal and rectangular features appear in the images. STS is sensitive to occupied and unoccupied states near the Fermi level and reveals the existence of distinct states in the tunnelling conductivity of the substrate as well as on the clusters. The richly structured density of states of the germanium surface serves here as tip condition test. First measurements of the tunnelling conductivity of the Co_N/Ge(001) are presented and discussed.     

Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (0 0 1)-c(4×4) surfaces

Microscopic topological and spectroscopic properties of MBE-grown GaAs c(4×4) surfaces without and with monolayer Si deposition were investigated by the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Empty state STM images on as-grown surface showed bright and dark cells, and they exhibited strong correlation with the spatial distribution of normal and anomalous conductance gaps of the STS spectra. Bias dependent STM images indicated presence of pinning areas with continuous space and energy distribution of surface gap states. By deposition of monolayer Si, dark areas reduced a great deal and the rate of finding normal STS spectra increased, indicating large reduction of surface states.     

Different behaviour of local tunneling conductivity for deep and shallow impurities due to Coulomb interaction

Spatial distribution of local tunneling conductivity was investigated for deep and shallow impurities on semiconductor surfaces. Non-equilibrium Coulomb interaction and interference effects were taken into account and analyzed theoretically with the help of Keldysh formalism. Two models were investigated: mean field self-consistent approach for shallow impurity state and Hubbard-I model for deep impurity state. We have found that not only above the impurity but also at the distances comparable to the lattice period both effects interference between direct and resonant tunneling channels and on-site Coulomb repulsion of localized electrons strongly modifies form of tunneling conductivity measured by the scanning tunneling microscopy/spectroscopy (STM/STS).     

Characterization of laser-ablated and chemically reduced silver colloids in aqueous solution by UV/VIS spectroscopy and STM/SEM microscopy

Silver colloids in aqueous solution were studied by different scanning microscopy techniques and UV/VIS spectroscopy. The silver colloids were produced either by chemical reduction or by nanosecond laser ablation from a solid silver foil in water. Variation of laser power and ablation time leads to solutions of metal clusters of different sizes in water. We characterized the electronic absorption of the clusters by UV/VIS spectroscopy. STM (scanning tunneling microscope) imaging of the metal colloids shows atomic resolution of rod- or tenon-like silver clusters up to 10-nm length formed by laser ablation. Our scanning electron microscope measurements, however, show that much larger silver colloids up to 5-μm length are also formed, which are not visible in the STM due to their roughness. We correlate them with the long-wavelength tail of the multimodal UV/VIS spectrum. The silver colloids obtained by chemical reduction are generally larger and their electronic spectra are red-shifted compared to the laser-ablated clusters. Irradiation of the colloid solution with nanosecond laser pulses of appropriate fluence at 532 nm and 355 nm initially reduced the colloid size. Longer irradiation at 355 nm, however, leads to the formation of larger colloids again. There seems to be a critical lower particle size, where silver clusters in aqueous solution become unstable and start to coagulate. Received: 24 June 2002 / Revised version: 25 July 2002 / Published online: 25 October 2002 RID="*" ID="*"This work is part of the thesis of H. M?ltgen RID="**" ID="**"Corresponding author. Fax: +49-211/811-5195, E-mail: kleinermanns@uni-duesseldorf.de