Structure and Properties of Violet Phosphorus and Its Phosphorene Exfoliation

Black phosphorene has attracted much attention as a semiconducting two‐dimensional material. Violet phosphorus is another layered semiconducting phosphorus allotrope with unique electronic and optoelectronic properties. However, no confirmed violet crystals or reliable lattice structure of violet phosphorus had been obtained. Now, violet phosphorus single crystals were produced and the lattice structure has been obtained by single‐crystal x‐ray diffraction to be monoclinic with space group of P2/n (13) (a=9.210, b=9.128, c=21.893 Å, β=97.776°). The lattice structure obtained was confirmed to be reliable and stable. The optical band gap of violet phosphorus is around 1.7 eV, which is slightly larger than the calculated value. The thermal decomposition temperature was 52 °C higher than its black phosphorus counterpart, which was assumed to be the most stable form. Violet phosphorene was easily obtained by both mechanical and solution exfoliation under ambient conditions.     

Research on optical band gap of the novel GeSe2–In2Se3–KI chalcohalide glasses

The glass-forming region of the GeSe₂–In₂Se₃–KI system was reported firstly. The dependence of physical, thermal and optical properties on compositions as formula of (1 ? x)(0.8GeSe₂–0.2In₂Se₃)–xKI (x = 0, 0.1, 0.2, 0.3) chalcohalide glasses was investigated. The allowed direct transition and indirect transition, and Urbach energy of samples were calculated according to the classical Tauc equation. The results show that the glass system has good thermal stability and that there is an obvious blue-shift at the visible absorbing cutting-off edge. When the dissolved amount of KI increased from 0 to 30 mol%, the direct optical band gap and the indirect optical band gap were in the range from 1.617 to 1.893 eV and 1.573 to 1.857 eV. With the decrease of the molar refraction the refractive index decreases, optical band gap and metallization criterion increase. The relationship between energy band gap and metallization criterion was analyzed and the optical properties of chalcohalide glasses were summarized.     

Lead‐Free Halide Double Perovskite Cs2AgBiBr6 with Decreased Band Gap

Environmentally friendly halide double perovskites with improved stability are regarded as a promising alternative to lead halide perovskites. The benchmark double perovskite, Cs₂AgBiBr₆, shows attractive optical and electronic features, making it promising for high‐efficiency optoelectronic devices. However, the large band gap limits its further applications, especially for photovoltaics. Herein, we develop a novel crystal‐engineering strategy to significantly decrease the band gap by approximately 0.26 eV, reaching the smallest reported band gap of 1.72 eV for Cs₂AgBiBr₆ under ambient conditions. The band‐gap narrowing is confirmed by both absorption and photoluminescence measurements. Our first‐principles calculations indicate that enhanced Ag–Bi disorder has a large impact on the band structure and decreases the band gap, providing a possible explanation of the observed band‐gap narrowing effect. This work provides new insights for achieving lead‐free double perovskites with suitable band gaps for optoelectronic applications.     

Electrical, optical, thermoelectric power, and dielectrical properties of organic semiconductor poly(1,12-bis(carbazolyl) dodecane) film

Electrical conductivity, optical, thermoelectric, and dielectrical properties of the poly(1,12-bis(carbazolyl) dodecane) film have been investigated. The activation energy for electrical conductivity and room-temperature electrical conductivity (at 25 degrees C) values were found to be 0.25 eV and 2.65 x 10-6 S/cm, respectively. The thermoelectric power results suggest that the conductivity is due to large polarons (i.e., the carriers in polymer move by hopping in the localized states at band gap edges). Electrical conductivity and thermoelectric power results confirm that the polymer is a p-type organic semiconductor. Optical absorption results suggest that the direct allowed transitions are dominant in the fundamental absorption edge in the polymer with optical band gap value of 2.72 eV. The refractive index dispersion of the polymer obeys the single oscillator model with oscillator energy (Eo = 3.06 eV) and dispersion energy (Ed = 17.82 eV) values. Alternating current conductivity results suggest that the hopping conductivity is dominant in the polymer. The dielectrical properties exhibit a non-Debye relaxation.     

One-step electrochemical synthesis of Cu—Zn—Sn—Se precursor thin films from solutions containing lactic acid

The influence of the conditions of electrochemical deposition of Cu—Zn—Sn—Se precursor thin films from solutions containing lactic acid on their optical and electrophysical properties was studied. It was found that an additional annealing step of precursor films in a selenium atmosphere at 550 °C is necessary for the preparation of single-phase polycrystalline photoconducting Cu—Zn—Sn—Se films with a band gap energy equal to ~1 eV. The obtained semiconductor CZTSe materials satisfy the composition and property requirements imposed on absorbing layers in solar panels.     

Lead-Free Halide Double Perovskite Cs2AgBiBr6 with Decreased Band Gap

Environmentally friendly halide double perovskites with improved stability are regarded as a promising alternative to lead halide perovskites. The benchmark double perovskite, Cs₂AgBiBr₆, shows attractive optical and electronic features, making it promising for high-efficiency optoelectronic devices. However, the large band gap limits its further applications, especially for photovoltaics. Herein, we develop a novel crystal-engineering strategy to significantly decrease the band gap by approximately 0.26 eV, reaching the smallest reported band gap of 1.72 eV for Cs₂AgBiBr₆ under ambient conditions. The band-gap narrowing is confirmed by both absorption and photoluminescence measurements. Our first-principles calculations indicate that enhanced Ag–Bi disorder has a large impact on the band structure and decreases the band gap, providing a possible explanation of the observed band-gap narrowing effect. This work provides new insights for achieving lead-free double perovskites with suitable band gaps for optoelectronic applications.     

Optical properties of the poly(N-benzylaniline) thin film

The optical properties of the poly(N-benzylaniline) thin film were investigated by optical characterization. The optical constants such as refractive index and dielectric constant were determined from the transmittance and reflectance spectra of the film. The refractive index dispersion was analyzed by the Wemple-DiDomenico model. The n(infinity) values changed from 6.37 to 5.71 and these values did not show any certain trend with annealing temperatures. The average oscillator parameter So value, which is the strength of the individual dipole oscillator, was found to be in the range of 1.15 x 10(13) to 1.03 x 10(13) m(-2). The optical band was determined from the direct optical transitions in K space. The optical band Eg of the film decreases from 2.089 to 2.046 eV with increasing annealing temperatures while the Urbach energy Eu called the width of localized states in the optical band gap increases from 0.544 to 0.598 eV. Consequently, the optical constants and optical band gap of the poly(N-benzylaniline) change with the annealing temperatures.     

Small band gap oligothieno[3,4-b]pyrazines

The synthesis and the optical and electrochemical properties of thiophene end capped oligo(2,3-alkylthieno[3,4- b]pyrazine)s are presented. The optical absorption rapidly shifts to lower energies with increasing chain length, caused in almost equal amounts by a rise of the HOMO and a lowering of the LUMO levels. The optical band gap of the polymer is estimated to be 1.13 +/- 0.07 eV. Extrapolated redox potentials indicate that the polymer is a small band gap p-type material.     

An oligomer study on small band gap polymers

Small band gap polymers may increase the energy conversion efficiency of polymer solar cells by increased absorption of sunlight. Here we present a combined experimental and theoretical study on the optical and electrochemical properties of a series of well-defined, lengthy, small band gap oligo(5,7-bis(thiophen-2-yl)thieno[3,4-b]pyrazine)s ( E g = 1.50 eV) having alternating donor and acceptor units. The optical absorptions of the ground state, triplet excited state, radical cation, and dication are identified and found to shift to lower energy with increasing chain length. The reduction of the band gap in these alternating small band gap oligomers mainly results from an increase of the highest occupied molecular orbital (HOMO) level. The S 1-T 1 singlet-triplet splitting is reduced from approximately 0.9 eV from the trimeric monomer to -0.5 eV for the pentamer. This significant exchange energy is consistent with the fact that both the HOMO and the lowest unoccupied molecular orbital (LUMO) remain distributed over virtually all units, rather than being localized on the D and A units.     

Achieving indirect-to-direct band gap transition and enhanced photocatalytic performance in blue phosphorene through doping and strain

Recently, blue phosphorene (BP) has demonstrated great potential in the field of photocatalytic water splitting due to the ultrahigh carrier mobility. However, the practical application of BP as an efficient photocatalyst is greatly limited by its indirect band gap. In this work, we investigate the synergistic effect of substitutional doping and biaxial strain on the electronic and photocatalytic properties of BP using hybrid density functional calculations. The results show that As/Sb doping not only reduces the band gap of BP without introducing any midgap states but also turns it into direct band gap semiconductor, which can be ascribed to the p states of the dopants appearing around the band edges. For these As/Sb-doped BP systems, the band gaps, band edge positions, and optical absorption abilities can be further tuned by applying a biaxial strain. In particular, we predict that compressive strains are more propitious for the doped systems than the tensile strains since the requirements for water splitting are satisfied, meanwhile preserving the direct band gap characteristics. Besides, our calculations also show that the band gap and the reducing and oxidizing power of multilayer BP are highly dependent on the layer thickness. These results suggest feasible modulation strategies for enabling BP to be a visible-light-driven photocatalyst for water splitting.     

Anhydrous crystals of DNA bases are wide gap semiconductors

We present the structural, electronic, and optical properties of anhydrous crystals of DNA nucleobases (guanine, adenine, cytosine, and thymine) found after DFT (Density Functional Theory) calculations within the local density approximation, as well as experimental measurements of optical absorption for powders of these crystals. Guanine and cytosine (adenine and thymine) anhydrous crystals are predicted from the DFT simulations to be direct (indirect) band gap semiconductors, with values 2.68 eV and 3.30 eV (2.83 eV and 3.22 eV), respectively, while the experimentally estimated band gaps we have measured are 3.83 eV and 3.84 eV (3.89 eV and 4.07 eV), in the same order. The electronic effective masses we have obtained at band extremes show that, at low temperatures, these crystals behave like wide gap semiconductors for electrons moving along the nucleobases stacking direction, while the hole transport are somewhat limited. Lastly, the calculated electronic dielectric functions of DNA nucleobases crystals in the parallel and perpendicular directions to the stacking planes exhibit a high degree of anisotropy (except cytosine), in agreement with published experimental results.     

Optical properties of oxygen vacancies in germanium oxides: quantum chemical modeling of photoexcitation and photoluminescence

Photoabsorption and photoluminescence properties of single and double oxygen vacancy (OV and DOV) defects in quartz-like germanium oxide have been investigated by high-level ab initio calculations. It has been found that photoabsorption for these systems occurs at lower energies as compared to the analogous defects in SiO(2). For OV, the lowest electronic excitations with high oscillator strengths have energies of 6.7-7.0 eV, whereas for DOV, the lowest-energy photoabsorption band is calculated to be in the range of 5.5-5.9 eV. Significant geometry relaxation and large Stokes shift are inherent for these excited states and, as a result, their photoluminescence bands are predicted to peak at 3.1-3.3 eV for OV and at 2.6 eV for DOV. The double oxygen vacancy is suggested to be the most suitable candidate for generating bright blue photoluminescence observed experimentally for substoichiometric quartz-like GeO(2) nanowires, as the calculated optical properties of DOV are in close agreement with the features found in experiment.     

Atomistic band gap engineering in donor-acceptor polymers

We have synthesized a series of cyclopentadithiophene-benzochalcogenodiazole donor-acceptor (D-A) copolymers, wherein a single atom in the benzochalcogenodiazole unit is varied from sulfur to selenium to tellurium, which allows us to explicitly study sulfur to selenium to tellurium substitution in D-A copolymers for the first time. The synthesis of S- and Se-containing polymers is straightforward; however, Te-containing polymers must be prepared by postpolymerization single atom substitution. All of the polymers have the representative dual-band optical absorption profile, consisting of both a low- and high-energy optical transition. Optical spectroscopy reveals that heavy atom substitution leads to a red-shift in the low-energy transition, while the high-energy band remains relatively constant in energy. The red-shift in the low-energy transition leads to optical band gap values of 1.59, 1.46, and 1.06 eV for the S-, Se-, and Te-containing polymers, respectively. Additionally, the strength of the low-energy band decreases, while the high-energy band remains constant. These trends cannot be explained by the present D and A theory where optical properties are governed exclusively by the strength of D and A units. A series of optical spectroscopy experiments, solvatochromism studies, density functional theory (DFT) calculations, and time-dependent DFT calculations are used to understand these trends. The red-shift in low-energy absorption is likely due to both a decrease in ionization potential and an increase in bond length and decrease in acceptor aromaticity. The loss of intensity of the low-energy band is likely the result of a loss of electronegativity and the acceptor unit's ability to separate charge. Overall, in addition to the established theory that difference in electron density of the D and A units controls the band gap, single atom substitution at key positions can be used to control the band gap of D-A copolymers.     

新型p-/n-交替3-烷基噻吩共聚物的合成及其光电性质的研究

通过Heck偶合法合成了四种新型p-/n-交替3-烷基噻吩共聚物：聚(2,4-二乙烯基-3-己基噻吩-1,3,4-噁二唑) (P3HT-OXD)、聚(2,4-二乙烯基-3-辛基噻吩-1,3,4-噁二唑) (P3OT-OXD)、聚(2,4-二乙烯基-3-己基噻吩-吡啶) (P3HT-Py)、聚(2,4-二乙烯基-3-辛基噻吩-吡啶) (P3OT-Py)。利用NMR、GPC等方法对结构进行了分析表征。采用循环伏安法、紫外－可见吸收光谱法对该系列共聚物的光电性能进行了研究,结果表明：随着噻吩环3位取代烷基碳链的增长,聚合物电离能（Ip）减小,带隙能（Eg）也随之变窄,其中,P3OT-OXD的Eg比P3HT-OXD小0.11ev,P3OT-Py的Eg比P3HT-Py小0.19eV;而在3-烷基噻吩聚合物主链上引入吸电子能力较强的噁二唑单元,可有效提高共聚物电子亲合能（Ea）,对提高电子传输能力,改善电子与空穴注入平衡有积极作用     

Study of electrodeposited zinc selenide (ZnSe) nanostructure thin films for solar cell applications

Electrodeposition approach was used to grow the ZnSe nanostructure on indium doped tin oxide (ITO) layered glass substrate. Due to low cost and high degree of absorption, binary semiconductors made from chalcogens such as CdSe, ZnO, ZnS and ZnSe provide significant features in photovoltaic and photoelectrochemical cells. The structural and morphological properties of deposited nanostructures were examined by XRD and SEM. X-ray diffraction analysis informed about cubic structure with a preferred orientation and the calculated crystal size was approximately 75 nm. The optical properties were examined by UV–visible absorbance spectra and optical band gap was measured using Tauc plot. The deposited ZnSe nanostructure has direct band gap ∼2.52 eV at room temperature which was less than 2.82 eV which is the band gap of bulk ZnSe. Investigations also focused on additional qualities like excellent optical transmission, low electrical resistance, and good photosensitivity. Because of the presence of defect states in the deposited nanostructure, the band gap energy is smaller than that of bulk material. The current-voltage characteristics were measured in dark mode and under illumination of normal tungsten filament light and LED. There was notable change in the current for both normal light and LED in comparison to dark mode. The findings of all the characterization methodologies suggested that for the production of solar cells low cost ZnSe may be used as an alternative environment friendly Cd-free window layer.     

Fluoride-assisted synthesis of anatase TiO2 nanocrystals with tunable shape and band gap via a solvothermal approach

A simple solvothermal approach employing oleic acid has been developed to prepare anatase TiO₂ nanocrystals with different shapes, which were tuned from nanorods to nano-ellipsoids by increasing the amount of NaF from 0 to 0.5 mmol, and the optical band gap decreased from 3.47 eV to 3.29 eV accordingly. However, when the fluoride was changed to NH₄F, the resultant TiO₂ nanocrystals possessed an anatase phase but weremade up of smaller-sized nanocrystals and nanorods, and the band gap was increased to 3.53 eV. The X-ray photoelectron spectroscopy (XPS) results illustrated an increase of fluorine content with an increasing amount of NaF could account for the variation of the shape and optical band gap of TiO₂ nanocrystals. Moreover, the absence of fluorine content brought about less change of shape and increase of optical band gap of the product synthesized in the presence of NH₄F. This result may offer another way to alter the shape and band gap of metal oxide nanocrystals with the assistance of fluoride.     

Effect of the annealing temperature on crystalline phase of copper oxide nanoparticle by copper acetate precursor and sol–gel method

A sol–gel route to synthesize copper oxide nanoparticles with an average size of ca. 63 nm from copper acetate precursor and monoethanolamine as the capping agent is reported. Structural characterization showed the formation of a cubic phase for CuO. The effect of annealing temperature on formation of crystalline phases was investigated. Characterization of the products was performed using thermo-gravimetric analysis, X-ray diffraction, field emission scanning electron microscopy, and diffuse reflectance. The results showed that there are significant differences in the morphological, crystallographic, structural, and optical properties of the nanostructures prepared at different annealing temperatures. The optical properties and band gap of CuO nanoparticles were studied by UV–Vis spectroscopy. According to the results of the optical measurements, the band gap is estimated to be 1.41 eV. These results showed that the band gap energy changed with increase of annealing temperature, which can be attributed to the change in grain size of the samples.     

Chemical deposition of semiconducting cadmium selenide quantum dots in thin film form and investigation of their optical and electrical properties

Cadmium selenide quantum dots with cubic crystal structure are chemically deposited in thin film form using selenosulfate as a precursor for selenide ions and ammonia buffer with double role: as a ligand and as a pH value controller. The optical band gap energies of as-deposited and thermally treated cadmium selenide thin films, calculated within the framework of parabolic approximation for the dispersion relation, on the basis of equations which arise from the Fermi's golden rule for electronic transitions from valence to conduction band, are 2.08 and 1.77 eV, correspondingly. The blue shift of band gap energy of 0.34 eV for as-deposited thin films with respect to the bulk value is due to the quantum size effects (i.e., nanocrystals behave as quantum dots) and this finding is in agreement with the theoretical predictions. During the thermal treatment the nanocrystals are sintered, the increase of crystal size being in correlation with the decrease of band gap energy. The annealed thin films are practically non-quantized. From the resistance-temperature measurements, on the basis of the dependence of ln(R/Ω) vs 1/T in the region of intrinsic conduction, the thermal band gap energy (at 0 K) of 1.85 eV was calculated.     

Se掺杂对单层MoS2电子能带结构和光吸收性质的影响

基于密度泛函理论的第一性原理方法,计算了Se掺杂单层MoS₂能带结构和光吸特性,并分析了对其光解水性质的影响。结果表明：本征单层MoS₂为直接带隙结构,禁带宽度为1.740 eV,导带底电位在H⁺/H₂还原势之上0.430 eV,价带顶电位在O₂/H₂O的氧化势之下0.080 eV,具有可见光催化分解水的能力,但氧化和还原能力不均衡,导致单层MoS₂作为光催化剂分解水的效率不高。通过Se掺杂计算发现,单层MoS₂的禁带宽度变为1.727 eV,相应的光吸收谱变化幅度几乎不变,且体系的形成能较低,表明其热力学稳定性良好。然而,导带底电位调整到H⁺/H₂还原势之上0.253 eV,价带顶电位处于O₂/H₂O的氧化势之下0.244 eV,平衡了氧化与还原能力,单层MoS₂可见光催化分解水的效率得到提高。