求解中子动力学方程的加权蒙特卡罗方法

为了实现基于蒙特卡罗方法的中子动力学计算,在传统的直接蒙特卡罗动力学方法的基础上,提出了一种加权蒙特卡罗动力学方法。该方法通过引入粒子权重的概念,隐式考虑中子俘获反应和裂变反应过程中中子数目的变化,避免了模拟粒子的数目随时间的变化,降低了统计偏差,消除了程序计算过程中粒子的存库操作,提高了计算精度。基于单能点堆模型,开发了中子动力学计算程序NECP-Dandi,进行了大量数值验证与分析,包括无缓发中子、单组缓发中子、六组缓发中子、正阶跃反应性引入、负阶跃反应性引入、正脉冲反应性、负脉冲反应性和正线性反应性引入等情况。数值结果表明,相比于直接蒙特卡罗动力学方法,加权蒙特卡罗动力学方法在计算结果的精度和计算效率上有较为明显的改进,程序结构更为简洁。     

Improved Monte Carlo renormalization group method

An extensive program to analyze critical systems using an improved Monte Carlo renormalization group method (IMCRG),⁽¹⁾ being undertaken at LANL and Cornell, is described. Here we first briefly rview the method and then list some of the topics being investigated.     

Time-dependent integral equations of neutron transport for calculating the kinetics of nuclear reactors by the Monte Carlo method

Integral equations for the shape functions in the adiabatic, quasi-static, and improved quasi-static approximations are presented. The approach to solving these equations by the Monte Carlo method is described.     

三维中子-光子输运的蒙特卡罗程序MCMG

三维中子-光子输运蒙特卡罗程序MCMG发展了针对物质的碰撞机制,几何块、几何面动态可扩展, 随机数周期进一步扩大到261。可进行多群-连续截面耦合计算,多群散射展开到P5,并考虑了中子上散射,程序配备了通用和专用多群截面库。MCMG模拟取得了与MCNP程序和实验一致的结果,串行计算速度较MCNP快2~4倍,可进行上万处理器核的并行计算。     

三维中子-光子输运的蒙特卡罗程序MCMG

三维中子-光子输运蒙特卡罗程序MCMG发展了针对物质的碰撞机制,几何块、几何面动态可扩展, 随机数周期进一步扩大到261。可进行多群-连续截面耦合计算,多群散射展开到P5,并考虑了中子上散射,程序配备了通用和专用多群截面库。MCMG模拟取得了与MCNP程序和实验一致的结果,串行计算速度较MCNP快2~4倍,可进行上万处理器核的并行计算。     

Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method

Interface roughness strongly influences the performance of germanium metal--organic--semiconductor field effect transistors (MOSFETs). In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of interface roughness scattering on electron and hole transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibrium transport properties are investigated. Results show that both electron and hole mobility are strongly influenced by interface roughness scattering. The output curves for 50~nm channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. The $82\%$ and $96\%$ drive current enhancement are obtained for the n- and p-MOSFETs with the completely smooth interface. However, the enhancement decreases sharply with the increase of interface roughness. With the very rough interface, the drive currents of Ge MOSFETs are even less than that of Si MOSFETs. Moreover, the significant velocity overshoot also has been found in Ge MOSFETs.     

Numerical analysis of a shock-wave solution of the Enskog equation obtained via a Monte Carlo method

In this paper a planar stationary shock-wave-like solution of the Enskog equation obtained via a Monte Carlo technique is studied; both the algorithm used to obtain the solution and the qualitative behavior of the macroscopic quantities are discussed in comparison with the corresponding solution of the Boltzmann equation.     

Monte Carlo solution of the Boltzmann equation via a discrete velocity model

A new discrete velocity scheme for solving the Boltzmann equation is described. Directly solving the Boltzmann equation is computationally expensive because, in addition to working in physical space, the nonlinear collision integral must also be evaluated in a velocity space. Collisions between each point in velocity space with all other points in velocity space must be considered in order to compute the collision integral most accurately, but this is expensive. The computational costs in the present method are reduced by randomly sampling a set of collision partners for each point in velocity space analogous to the Direct Simulation Monte Carlo (DSMC) method. The present method has been applied to a traveling 1D shock wave. The jump conditions across the shock wave match the Rankine–Hugoniot jump conditions. The internal shock wave structure was compared to DSMC solutions, and good agreement was found for Mach numbers ranging from 1.2 to 10. Since a coarse velocity discretization is required for efficient calculation, the effects of different velocity grid resolutions are examined. Additionally, the new scheme’s performance is compared to DSMC and it was found that upstream of the shock wave the new scheme performed nearly an order of magnitude faster than DSMC for the same upstream noise. The noise levels are comparable for the same computational effort downstream of the shock wave.     

Investigation of gate current in nano-scale MOSFETs by Monte Carlo solution of quantum Boltzmann equation

This paper investigates gate current through ultra-thin gate oxide of nano-scale metal oxide semiconductor field effect transistors (MOSFETs), using two-dimensional (2D) full-band self-consistent ensemble Monte Carlo method based on solving quantum Boltzmann equation. Direct tunnelling, Fowler--Nordheim tunnelling and thermionic emission currents have been taken into account for the calculation of total gate current. The 2D effect on the gate current is investigated by including the details of the energy distribution for electron tunnelling through the barrier. In order to investigate the properties of nano scale MOSFETs, it is necessary to simulate gate tunnelling current in 2D including non-equilibrium transport.     

Study of muonic hydrogen transport in TRIUMF experiment 742 by the Monte Carlo method

A technique of neutral muonic atom beams is proposed in the TRIUMF E742 experiment for measuring the scattering cross sections of muonic hydrogen isotopes in solid hydrogen. We present the results of Monte Carlo modeling of pµ and dµ atoms transport under the conditions of this experiment, taking into account the main physical as well as the geometrical aspects. The optimization of set-up parameters is performed in order to choose the most sensitive experimental conditions.     

Chapman-Enskog-maximum entropy method on time-dependent neutron transport equation

The time-dependent neutron transport equation in semi and infinite medium with linear anisotropic and Rayleigh scattering is proposed. The problem is solved by means of the flux-limited, Chapman-Enskog-maximum entropy for obtaining the solution of the time-dependent neutron transport. The solution gives the neutron distribution density function which is used to compute numerically the radiant energy density E(x,t), net flux F(x,t) and reflectivity R_f. The behaviour of the approximate flux-limited maximum entropy neutron density function are compared with those found by other theories. Numerical calculations for the radiant energy, net flux and reflectivity of the proposed medium are calculated at different time and space.     

热辐射输运问题的隐式蒙特卡罗方法求解

热辐射与物质相互作用及辐射光子在物质中的传输是惯性约束聚变研究中的重要课题. 介绍了基于隐式蒙特卡罗方法的辐射输运方程,在该方程的积分-微分形式基础上,推导了利于蒙特卡罗方法模拟的等价的积分输运方程;基于积分方程设计数值模拟流程,编写三维蒙特卡罗数值模拟程序;针对热辐射输运典型问题及benchmark问题开展了数值实验,计算结果验证了方法的适应性及程序的正确性. 关键词： 热辐射 惯性约束聚变 输运方程 隐式蒙特卡罗     

The solution of the neutron transport equation in a slab with anisotropic scattering

The neutron transport equation for a slab geometry with the extremely anisotropic scattering kernel is considered. The albedo and transmission factors are calculated using the variation method. The effect of the extremely anisotropic parameter on the variation of the slab albedo and transmission factor is calculated. The obtained results are compared with the published data.     

Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation

A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical (QM) effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect.     

A new proposal for the determination of the renormalization group trajectories by the Monte Carlo renormalization group method

We present a new method for calculating block renormalized couplings by Monte Carlo renormalization group. This method has several advantages with respect to the existing ones and can be applied for any value of the coupling constants. A preliminary numerical study of the 2-dimensional O(3) non linear σ-model is also presented.     

Analysis of the relationship between neutron dose and Cerenkov photons under neutron irradiation through Monte Carlo method

To theoretically explore the feasibility of neutron dose characterized by Cerenkov photons, the relationship between Cerenkov photons and neutron dose in a water phantom was quantified using the Monte Carlo toolkit Geant4. Results showed that the ratio of the neutron dose deposited by secondary electrons above Cerenkov threshold energy to the total neutron dose is approximately a constant for monoenergetic neutrons from 0.01 eV to 100 eV. With the initial neutron beam energy from 0.01 eV to 100 eV, the number of Cerenkov photons has a good correlation with the total neutron dose along the central axis of the water phantom. The changes of neutron energy spectrum and mechanism analysis also explored at different depths. And the ratio of total neutron dose to the intensity of Cerenkov photons is independent of neutron energy for neutrons from 0.01 eV to 100 eV. These findings indicate that Cerenkov radiation also has potential in the application of neutron dose measurement in some specific fields.     

热辐射输运问题的高效蒙特卡罗模拟方法

惯性约束聚变研究中,热辐射光子在介质中的输运以及热辐射光子与介质的相互作用是重要研究课题,蒙特卡罗方法是该类问题的重要研究手段之一.隐式蒙特卡罗方法虽然能正确地模拟热辐射在介质中的输运过程,但当模拟重介质(材料的吸收系数大)问题时,该方法花费的计算时间将变得很长,导致模拟效率很低.本文以离散扩散蒙特卡罗方法为基础,开发了"离散扩散蒙特卡罗方法辐射输运模拟程序",可以较好地解决重介质区的计算效率问题,但是离散扩散蒙卡罗方法在模拟轻介质区时精度不够高.辐射输运问题中通常既有轻介质也有重介质,为了能同时解决蒙特卡罗方法模拟的效率和精度问题,本文研究了离散扩散蒙特卡罗方法与隐式蒙特卡罗方法相结合的模拟方法,并提出了新的扩散区与输运区界面处理方法,研制了混合蒙特卡罗方法的辐射输运模拟程序.典型辐射输运问题模拟显示:在模拟重介质问题时,该程序能大幅缩短模拟时间,且能取得与隐式蒙特卡罗方法一致的结果;在模拟轻重介质均存在的问题时,与隐式蒙特卡罗方法相比,混合蒙特卡罗方法的模拟精度与其相当且计算效率同样能够得到显著提升.