共查询到17条相似文献,搜索用时 46 毫秒
1.
2.
3.
4.
本文报道了用结构相似的丙二酸取代TGS晶体中的部分甘氨酸的单晶体的生长特性与组成分析,同时测定了这些新晶体的热释电系数,介电常数,居里温度。实验表明,用丙二酸部分取代甘氨酸生成的MTGS晶体的优值比TGS提高近二倍。 相似文献
5.
掺质TGS晶体生长机制的探索研究 总被引:4,自引:3,他引:1
本文采用水溶液降温法生长了6种掺质TGS晶体,掺质分别为有机小分子化合物:甲酸、乙酸、丙酸、丙醇、1,2-丙二醇和硫脲。研究了此6种掺质TGS晶体的生长形态,X-射线粉末衍射和红外光谱以及主要的热释电性能参数等。最后从氢键形成的观点出发,探索研究了掺质TGS晶体的生长机制。 相似文献
6.
掺质KTP型晶体生长与性能研究 总被引:5,自引:1,他引:5
采用高温溶液法生长了含掺质离子Zr4+,Ga3+的单掺和双掺系列KTP型晶体.晶体生长过程中发现Ga掺入溶液后,体系更加稳定,容易生长出光学质量的晶体;而Zr掺入溶液后体系稳定性降低,晶体生长较困难.用等离子体发射光谱测定了各掺质离子在晶体中的含量,计算出掺质离子的分配系数,发现生长体系中Ga无论是在高掺入量还是低掺入量的情况下,Ga在晶体中的含量都十分稳定.测定了晶体的晶胞参数、紫外-可见-红外吸收光谱,测定的结果发现,晶胞参数均变化不大,在吸收光谱中Ga:KTP在可见光谱区有少量的光吸收,而Zr:KTP晶体是无色透明的.通过粉末倍频实验发现,Zr的掺入有助于晶体倍频转换效率的提高.通过晶体c轴向离子电导率的测试发现,Ga的掺入使c轴向电导率降低了大约3个数量级.双掺Zr和Ga的晶体是性能更为优良的掺质KTP型晶体. 相似文献
7.
8.
本文采用水溶液缓慢降温法生长了4种双有机取代基TGS系列晶体.双有机取代基分别为L-α-丙氨酸+乙酸,L-α-丙氨酸+丙酸,L-α-丙氨酸+乳酸,L-α-丙氨酸+异丙醇胺.系统地研究了有机双取代基TGS系列晶体的生长形态、晶胞参数、主要的介电、热释电和铁电性能参数等,发现这几种双有机取代基TGS晶体的品质因子有不同程度地提高.并从结构的角度出发探讨了双有机取代基对晶体生长形态和晶体性能的影响机制,提出了有机取代基分子本身的结构特征和有机取代基中的功能基团是影响TGS晶体形态和性能的两大因素. 相似文献
10.
本文详细研究了提拉法生长Cr:Tm:YAG晶体的原料配制和晶体生长工艺,研究了晶体生长过程中出现的主要缺陷,测试了晶体的吸收光谱,荧光光谱及激光性能。结果表明,Cr:Tm:YAG晶体是一种优良的中红外灯泵激光材料。 相似文献
11.
The growth kinetics of TGS crystals was studied at high supersaturations under the Curie temperature. The kinetics data proved that the crystal growth was mainly controlled by BCF surface diffusion model. The continuous growth was fitted to the growth rate data of (110) face. Its edge energy, Jackson factor, activity energies, kinetic coefficients were calculated. 相似文献
12.
选择重稀土离子Dy3 为掺杂阳离子,DL-丙氨酸与L-谷氨酸部分取代甘氨酸分子,生长了不同掺杂配比的TGS晶体。生长和测试实验表明,掺杂TGS晶体较纯TGS晶体易于生长。将掺杂晶体生长溶液的pH值控制在1~4,可改变掺杂晶体的结晶习性。用ICP发射光谱测试了掺杂晶体中稀土元素的含量,用X射线粉末衍射法测定了晶格参数,结果表明:元素已进入晶体,晶格参数稍有变化,但掺杂晶体的对称性仍为C2-2。通过测量掺杂晶体的电滞回线,得到了内偏压场,还测量了各样品的热释电系数、自发极化强度,作了温度曲线,并分析了各掺杂剂对提高热释电性能和锁定极化的作用。结果表明:是有应用前景的热释电材料。 相似文献
13.
A. Abu El-Fadl 《Crystal Research and Technology》1999,34(8):1047-1054
The effect of temperature on the optical absorption spectra and optical parameters is investigated for pure TGS and TGS doped with Cu2+ ions. Absorption measurements cover the range from room temperature to about 355 K in the energy range 3-5.5 eV. The temperature dependence of the band gap Eg(T) reveals an anomaly at the phase transition temperature for both pure and Cu2+-doped TGS crystals. In the region of the absorption edge the absorption coefficient is found to display Urbach-rule behaviour. The characteristic Urbach parameters are determined and their temperature dependence is investigated. 相似文献
14.
Modified TGS single crystals have been grown by doping with Cobalt (II) Phosphate in ferroelectric phase. The effects of different amounts of doping entities on the growth habit and P‐E hysteresis loop have been investigated. The experimental results show that while the spontaneous polarization Ps measured on variously doped crystals remains virtually unchanged, the coercive field values differ in dependence on the growth conditions and grown pyramidal features. The highest values of the coercive field Ec have been found to fall in the interval 800‐900 V/cm. 相似文献
15.
16.
Daliang Sun Xiling Yu Yan Wang Youjun Fu 《Progress in Crystal Growth and Characterization of Materials》2000,40(1-4):227-233
The growth kinetics and mechanisms on the (001) and (100) faces of TGS crystals were investigated. A phase contrast microscope with a CCD camera was used to observe the growth of the crystal. We found the growth on the (001) and (100) faces at high supersaturation was mainly controlled by a BCF surface diffusion mechanism. The kinetic data for the (100) face were also fitted by the nucleation and layer growth model of two-dimension nucleation at high supersaturation. Some important growth parameters for TGS crystals, such as edge energy, activation energy, and so on, were estimated. 相似文献
17.
钒酸盐系列激光晶体制备和性能研究 总被引:2,自引:0,他引:2
用提拉法生长了Nd∶YVO4, Nd∶GdVO4,Nd∶GdxLa1-xVO4(x=0.8, 0.6, 0.45)系列晶体,对影响晶体质量的因素进行了分析,测量了几种晶体的结构和晶胞常数;测量了Nd∶YVO4, Nd∶GdVO4, Nd∶Gd0.8La0.2VO4和Nd∶Gd0.6La0.4VO4晶体的室温吸收谱和荧光谱,用LD泵浦Nd∶YVO4, Nd∶GdVO4, Nd∶Gd0.8La0.2VO4晶体,实现了1.06μm和1.34μm的激光输出. 相似文献