Molecular structure and fracture properties of ZrO<Subscript>X</Subscript>/Epoxysilane hybrid films

The mechanical reliability of hybrid films depends critically on their fracture properties which are controlled largely by the film composition and molecular structure. We have investigated the adhesive and cohesive fracture properties of hybrid films processed from 3-glycidoxypropyltrimethoxysilane (GPTMS) and tetra n-propoxyzirconium (TPOZ), for which the roles of molecular structure and composition have not been well established. The influences of film Zr/GPTMS ratio, silane crosslinking, and substrate composition on fracture resistance were quantified in terms of the critical strain energy release rate, G_C Film fracture energy was found to increase, then decrease with increasing Zr/GPTMS ratio. Removal of the epoxy rings of GPTMS from the film was found to drastically decrease the cohesive fracture energy of the film as well as the adhesive fracture energy of the film/epoxy interface. Finally, films deposited on silicon had much higher fracture energies compared to those deposited onto aluminum and titanium from identical sols. FTIR, XPS, and AFM were used to characterize the film structure and fracture surfaces. The molecular-scale mechanisms responsible for the observed trends are discussed. These results provide new insights into the interaction between the substrate chemistry, molecular structure, and mechanical reliability of hybrid sol-gel films.     

Photo-Induced Hydrophilicity of TiO<Subscript>2</Subscript> Films Deposited on Stainless Steel via Sol-Gel Technique

The photo-induced hydrophilicity of TiO₂ films deposited on stainless steel substrates and silicon wafers using two different sol-gel routes has been investigated. The results indicate that crystalline titanium oxide films with excellent hydrophilic properties can be obtained on silicon wafer with both routes. XPS and XRD data reveal that films deposited on stainless steel exhibit crystallization features similar to those of films deposited on silicon wafers, and only differ by their oxidation degree owing to a TiO₂ reduction process associated to a diffusion of iron ions during deposition of the acidic sol and/or high temperature post-treatment. Consequently, hydrophilic properties of films deposited on stainless steel are inhibited. The deposition of a SiO_x barrier layer at the film/substrate interface allows preventing such a detrimental substrate influence. A low temperature deposition route of the TiO₂ film associated to the presence of a barrier layer yields best results in preventing iron contamination of the films.     

Microstructure and Magnetic Behaviour of Nanosized Fe<Subscript>3</Subscript>O<Subscript>4</Subscript> Powders and Polycrystalline Films

Summary.  The object of investigation were the magnetic interactions in nanostructured Fe₃O₄ assemblies of two kinds (powder and film) where particles of similar size present nearly uniform domains in a close to planar arrangement with spacings sufficient for magnetic interactions. We discuss the use of the soft-chemistry method, i.e. the modified ‘ferrite plating’ (MFP) technique, for the synthesis of polycrystalline films of magnetite with nanosized crystallites. Received October 22, 2001. Accepted January 21, 2002     

Effect of Solution Characteristics on Morphology of SrZrO<Subscript>3</Subscript> Film Electrolyte in Chemical Solution Deposition

Fundamental aspects of how films of the SrZr_0.95Y_0.05O_3–δ electrolyte are formed from alcoholic-aqueous solutions of salts at various solution characteristics (salt concentration, viscosity, and relative content of water) were studied. It was found that, to obtain dense film electrolytes, it is necessary to use low-viscosity solutions with the minimum content of water. The revealed fundamental aspects will make it possible to obtain dense film membranes based on strontium zirconate for solid-oxide fuel cells by the technologically simple solution method. Solutions with high content of water can be used to form an external porous layer on the surface of a dense membrane, which must favor an increase in the power of fuel cells.     

Comparative study of the structural,optical, and electrical properties of CuAlO<Subscript>2</Subscript> thin films on Al<Subscript>2</Subscript>O<Subscript>3</Subscript> and YSZ substrates via chemical solution deposition

Single-phase delafossite CuAlO₂ thin films are deposited successfully on Al₂O₃ (001) and YSZ (100) substrates using the chemical solution method. X-ray diffraction data present that the CuAlO₂ film on the Al₂O₃ (001) substrate is epitaxial, whereas that on YSZ (100) is c-axis oriented; the same is also demonstrated by the HRTEM images and SAED patterns. Optical transmittance spectra exhibit that both films have high transparency in the visible region. However, in this region, the optical transmittance of the CuAlO₂ thin film deposited on (001) Al₂O₃ is inferior to that deposited on (100) YSZ. This optical anomaly can be attributed to surface scattering. Electrical transport measurements show that the resistivity of the film on (001) Al₂O₃ is one order lower than that on (100) YSZ, suggesting that in-plane orientation is significant in improving hole mobility.     

The microstructure and magnetic properties of Ni<Subscript>0.4</Subscript>Zn<Subscript>0.6</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript> films prepared by spin-coating method

Nickel zinc ferrite (Ni_0.4Zn_0.6Fe₂O₄) films on Si (100) substrate were synthesized using a spin-coating method. The crystallinity of the Ni_0.4Zn_0.6Fe₂O₄ films with the thickness of about 386 nm became better as the annealing temperature increased. The films have smooth surface, relatively good packing density and uniform thickness. The volatilization of Zn is serious at 900 °C. With the increase of annealing temperature, the saturation magnetization M _s increases in the temperature ranging from 400 to 700 °C, however, decreases above 700 °C, and the coercivity H _c increases in the temperature range 400–800 °C, decreases above 800 °C. After annealed at 700 °C for 2 h in air with the heating rate 2 °C/min, the film shows a maximum saturation magnetization M _s of 349 emu/cc and low coercivity H _c of 66 Oe. The M _s is higher than others which prepared by this method, however, the H _c is lower. The M _s of Ni_0.4Zn_0.6Fe₂O₄ films annealed at 700 °C increases with increasing annealing time and the H _c changes slightly.     

Yttria stabilized zirconia solid electrolyte surface modification with ZrO<Subscript>2</Subscript>, Y<Subscript>2</Subscript>O<Subscript>3</Subscript>, and ZrO<Subscript>2</Subscript> + 9 mol % Y<Subscript>2</Subscript>O<Subscript>3</Subscript> films

The surface of ceramic electrolyte ZrO₂ + 9 mol % Y₂O₃, hereinafter referred to as YSZ (abbreviated yttria stabilized zirconia), was modified with 0.1 to 0.2 μm oxide films of ZrO₂, Y₂O₃, and YSZ (same composition as substrate) by dip coating in alcohol solutions of the relevant salts and further annealing. The results of scanning electronic microscopy and X-ray diffraction evidence epitaxial film growth. By means of impedance spectroscopy at the temperatures of 500 to 600°C, the effect of YZS electrolyte surface modification with ZrO₂, Y₂O₃, and YSZ films to the polarization resistance of silver electrode was studied.     

Low-temperature processing of sol-gel derived Pb(Zr,Ti)O<Subscript>3</Subscript> thick films using CO<Subscript>2</Subscript> laser annealing

Fabrication of ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thick films on a Pt/Ti/SiO₂/Si substrate using powder-mixing sol-gel spin coating and continuous wave CO₂ laser annealing technique to treat the specimens with at a relatively low temperature was investigated in the present work. PZT fine powders were prepared by drying and pyrolysis of sol-gel solutions and calcined at temperatures from 400 to 750°C. After fine powder-containing sol-gel solutions were spin-coated on a substrate and pyrolyzed, CO₂ laser annealing was carried out to heat treat the specimens. The results show that laser annealing provides an extremely efficient way to crystallize the materials, but an amorphous phase may also form in the case of overheating. Thicker films absorb laser energy more effectively and therefore melt at shorter periods, implying a significant volume effect. A film with thickness of 1 μm shows cracks and rough surface morphology and it was difficult to obtain acceptable electrical properties, indicating importance of controlling interfacial stress and choosing appropriate size of the mixing powders. On the other hand, a thick film of 5 μm annealed at 100 W/cm² for 15 s exhibits excellent properties (P _r = 36.1 μC/cm², E _c = 19.66 kV/cm). Films of 10 μm form a melting zone at the surface and a non-crystallized bottom layer easily at an energy density of 100 W/cm², showing poor electrical properties. Besides, porosity and electrical properties of thick films can be controlled using appropriate processing parameters, suggesting that CO₂ laser annealing of modified sol-gel films is suitable for fabricating films of low dielectric constants and high crystallinity.     

Laser assisted selective chemical metalization of Al<Subscript>2</Subscript>O<Subscript>3</Subscript> films

Thick aluminum oxide films are prepared on Al plates by anodizing. On the ceramic surface thus obtained a very thin Ag film is deposited via vacuum thermal evaporation. The Ag/Al₂O₃/Al samples prepared are irradiated by Nd:YAG laser through a suitable metal mask in order to remove the top metal film in the exposed areas. Thus, a negative silver image of the copied mask is obtained. Further, the samples are processed in Ni electroless chemical bath activated by the rest of silver. All processing steps are studied by scanning electron microscopy (SEM). EDS X-ray mapping is applied to study the final distribution of Al and Ni in the processed areas. In addition, the DC conductivity of the fabricated Ni wires obtained is measured. The proposed new method for selective chemical deposition of electroconductive Ni onto laser microstructured Ag/Al₂O₃/Al samples is simple, versatile and not restricted to the metal/ceramic system studied as well as to the electroless deposited metal.     

Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Effect of residual stress on piezoelectric property of Pb(Zr,Ti)O<Subscript>3</Subscript> films fabricated by sol-gel process

The effects of the residual tensile stress induced during the heat treatment process after sol-gel coating on the piezoelectric properties of PbZr_xTi_1-xO₃ (PZT) films were investigated. PZT films were deposited on platinized silicon substrates using a sol containing polyvinylpyrrolidone (PVP). After the coating process, the films were elastically bent concavely by using a fixture during the annealing process. The substrate was bent by an external force, then the gel film was fired while the substrate bending being kept, and after cooling the external force was removed, which could manipulate the residual stress in films. The piezoelectric displacement was markedly increased due to the development of residual stress.     

Influence of YSZ buffer layer on the electric properties of compositionally graded (Ba,Sr)TiO<Subscript>3</Subscript> thin film

Compositionally graded Ba_1−x Sr _x TiO₃ (BST) (0 ≤ x ≤ 0.4) thin films were fabricated on Pt/Ti/SiO₂/Si and YSZ/Pt/Ti/SiO₂/Si substrates by a modified sol–gel technique. The YSZ buffer layer was prepared by RF magnetron sputtering. The microstructure of the graded BST films was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The results showed that all the films have uniform and crack-free surface with a perovskite structure. The graded BST film with an YSZ buffer layer has larger dielectric constant and lower dielectric loss. The leakage current density of the graded BST film with an YSZ buffer layer lowers two orders than the film without buffer layer. The improved electric properties of the graded films with an YSZ buffer layer was attributed to the YSZ buffer layer act as an excellent seeding layer to enhance the graded BST film growth.     

Preparation and characterization of the Ti/IrO<Subscript>2</Subscript>/WO<Subscript>3</Subscript> as supercapacitor electrode materials

WO₃ films have been prepared onto IrO₂-coated Ti substrate by electro-deposition, and as-deposited and annealed films have been characterized by using Raman spectroscopy. It was found that the asdeposited film consists of orthorhombic WO₃ · H₂O phase, which transforms to amorphous WO₃ by annealing at 250°C and to monoclinic phase by annealing at and above 350°C. All electrochemical experiments were carried on Ti/IrO₂/WO₃ annealed at 450°C. The open-circuit potential could change significantly due to the hydration of the coating film. However this process is fairly slow. Reproducible voltammograms could be obtained quickly, further revealing high electrochemical stability of the Ti/IrO₂/WO₃ electrode. And the shapes of CV show the approximate rectangular mirror image, showing the typical characteristic of capacitive behavior. The specific capacitance obtained at a scan rate of 50 mV s⁻¹ is 46 F g⁻¹.     

Determination of C<Subscript>1</Subscript>-C<Subscript>3</Subscript> carboxylic acids in air using a sensor

The adsorption of C₁-C₃ carboxylic acids on modified films of different natures and polarities is studied in exposuring piezoelectric sensors to acid vapors. The method of film fabrication and the ratio of components in the mixed films are optimized; the sensitivity and selectivity of films are calculated; piezoelectric sensors are proposed for the separate determination of acids in air; and equations for calculating their concentrations are derived.     

Effect of crystallographic structure on electrical and mechanical characteristics of Sm<Subscript>2</Subscript>O<Subscript>3</Subscript>-Doped CeO<Subscript>2</Subscript> films

Electrical conductivity, dielectric permittivity and mechanical hardness of the polycrystalline CeO₂ + xSm₂O₃ (x = 0, 10.9–15.9 mol %) films prepared by Electron Beam Physical Vapour Deposition (EB-PVD) and Ionic Beam Assisted Deposition, (IBAD), techniques were investigated in dependence on their structure and microstructure influenced by the deposition conditions, namely composition, deposition temperature and Ar⁺ ion bombardment. The electrical conductivity of doped ceria prepared without Ar⁺ ion bombardment and investigated by the impedance spectroscopy, IS, was found to be predominantly ionic one under the oxidizing atmosphere/low-temperature conditions and the higher amounts of Sm₂O₃ (>10 mol %) used. The bulk conductivity as a part of total measured conductivity was a subject of interest because the grain boundary conductivity was found to be ∼3 orders of magnitude lower than the corresponding bulk conductivity. Ar⁺ ion bombardment acted as a reducer (Ce⁴⁺ → Ce³⁺) resulting in the development of electronic conductivity. Dielectric permittivity determined from the bulk parallel capacitance measured at room temperature and the frequency of 1 MHz, similarly as the mechanical hardness measured by indentation (classical Vickers and Depth Sensing Indentation-DSI) techniques were also found to be dependent on the deposition conditions. The approximative value of hardness for the investigated films deposited on the substrate was estimated using a simple phenomenological model described by the power function HV = HV ₀ + aP ^b and compared with the so-called apparent hardness (substrate + investigated film) determined by the classical Vickers formula. Results obtained are analyzed and discussed.     

Novel Electroless Deposition of Cu<Subscript>3</Subscript>Se<Subscript>2</Subscript> Film on Silicon Substrate by a Simple Galvanic Displacement Process

A novel electroless deposition method for depositing highly uniform adhesive thin films of copper selenide (Cu₃Se₂) on silicon substrates from aqueous solutions is described. The deposition is carried out by two coupled galvanic reactions in a single deposition bath containing copper cations, hydrogen fluoride, and selenous acid: the galvanic deposition of copper on silicon and the subsequent galvanic reaction between the deposited copper with selenous acid in the deposition bath. The powder X-ray diffraction and scanning electron microscopy are used to characterize and examine the deposited films.     

Effects of surfactants on wave-induced drainage of foam and emulsion films

It is well established that the plane-parallel models of foam and emulsion films underestimate the velocity of film thinning by up to several orders of magnitude and show an incorrect dependence of thinning velocity on film radius. A new theory of film thinning has been previously formulated for tangentially immobile films [12, 13], and shows that the reason for this discrepancy is the neglect of experimentally observed finite amplitude surface waves. For thin films of relatively large radii (> 1o^–2 cm), the pumping of the fluid generated by oscillations of the surface waves, provides the dominant contribution to film thinning velocity. The present hydrodynamic model includes the effects of surfactants (Marangoni-Gibbs-effect, surface viscosity and surface diffusion) and surface waves on thinning velocity. As in the case of a tangentially immobile film, it is concluded that the thinning velocity varies inversely with less than the first power of the film radius, and not with the square of the film radius, as predicted by the plane-parallel models of thin film. Also, the velocity of thinning is found to be up to several orders of magnitudes larger than that evaluated from the plane-parallel models. The influence of waves in enhancing the thinning velocity is found to be most significant for a tangentially immobile film and this effect decreases by a factor of up to 3, with a decrease in surface elasticity and surface viscosity.     

Photoluminescence study of the electronic structure of HfO<Subscript>2</Subscript> films

A method was developed for investigating hafnium dioxide films; this procedure uses a hydrogen-deuterium lamp as a source of photoluminescence (PL) excitation. Photoluminescence in HfO₂ films was investigated. An analysis of the PL spectra of the films showed that they coincided with the spectra described in the literature and recorded using more powerful sources (synchrotron radiation or ArF laser). A comparison of our results with the literature data confirmed that the PL spectra of the films weakly depended on the type of the substrate used for the synthesis. The PL band intensity depends on the synthetic conditions and the annealing temperature. We analyzed the PL and excitation spectra and revealed an emission band at an energy E ～ 4 eV with a narrow excitation maximum at E _max ? 4.25 eV, which was assigned to the vibronic resonance transition A ²Σ⁺ ? X ²Π_i in the OH_?* excited radical. Water was detected in the PL spectra of the HfO₂ films; it is trapped as an impurity after thermal decomposition of Hf(dpm)₄ in the course of film growth. The detection of water in the PL spectra of these films provides new insight into the problem of the effect of this impurity on the leakage currents and the importance of control over its content in the films.     

Controllable preparation of nanosized TiO<Subscript>2</Subscript> thin film and relationship between structure of film and its photocatalytic activity

TiO₂ nano-crystalline film and fixed bed photocatalytic reactor were prepared by the sol-gel process using tetrabutylorthotitanate as a precursor and glass tube as the substrate. XRD, AFM, SEM and thickness analysis results indicate that the preparation of nano-crystalline film can be controlled by optimizing experiment process. Under the optimized process, the phase of TiO₂ in film is anatase, and the grain size is 3–4 nm. The size of particles, which is about 20-80 nm, can be controlled. The thickness of monolayer film is in nanometer grade. The thickness and particles size in films growing on nanometer film can also be controlled in nanometer grade. As a result, the crack of film can be effectively avoided. Rhodamine degradation results using UV-Vis spectrophotometer show that the activity of nano-crystalline film in the photocatalytic reactor has a good relation with the diameter of TiO₂ particles, that is, the film shows high activity when the size is 20 –30 nm and greatly reduced when the size is above 60 nm. The activity of film does not decrease with the increase of film thickness, and this result indicates that nano-crystalline film has no ill influence on the transmissivity of ultraviolet light.     

Influence of Working Pressure on the Al<Subscript>2</Subscript>O<Subscript>3</Subscript> Film Properties in Plasma-Enhanced Atomic Layer Deposition

The effect of working pressure on the properties of Al₂O₃ films was investigated in direct-type plasma-enhanced atomic layer deposition. Increasing pressure yielded a denser Al₂O₃ film and a thinner SiO_x interlayer, but only slightly affected the Al₂O₃ film thickness. The diffusivity of O atoms was evaluated by using time-averaged emission intensities of the He I and O I lines. The consumption rate of O radicals and the production rate of H radicals, as functions of plasma exposure time, were deduced from analyzing temporal evolutions of emission intensities of the O I and H_α lines, respectively. The amounts of C and H impurities in the film were confirmed by using an X-ray photoelectron spectroscopy. Finally, the mechanisms by which the working pressure affected the properties of Al₂O₃ films were discussed based on the experimental results.