Facile synthesis and assembly of CuS nano-flakes to novel hexagonal prism structures

Highly ordered hexagonal prism microstructures of copper sulfide (CuS) by assembling nano-flakes have been synthesized with high yield via a facile one-step route. We synthesized CuS microstructures using low cost beginning materials CuSO₄·5H₂O and Na₂S₂O₃·5H₂O under lower reaction temperature (60 °C). Hexamethylinetetramin (C₆H₁₂N₄, HMT) was introduced into the reaction system as a capped agent. The influence of reaction time and capping agent (HMT) on the final structure of products was studied systematically. The obtained products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Energy-dispersive X-ray spectroscopes (EDS), and transmission electron microscopy (TEM). The possible mechanism for the formation of the interesting highly ordered hexagonal prism microstructures CuS was also proposed.     

In-situ visualization of a super-accelerated synthesis of zinc oxide nanostructures through CO2 laser heating

A simple growth technique capable of growing a variety of zinc oxide (ZnO) nanostructures with record growth rates of 25 μm/s is demonstrated. Visible lengths of ZnO nanowires, nanotubes, comb-like and pencil-like nanostructures could be grown by employing a focused CO₂ laser-assisted heating of a sintered ZnO rod in ambient air, in few seconds. For the first time, the growth process of nanowires was videographed, in-situ, on an optical microscope. It showed that ZnO was evaporated and presumably decomposed into Zn and oxygen by laser heating, reforming ZnO nanostructures at places with suitable growth temperatures. Analysis on the representative nanowires shows a rectangular cross-section, with a [0 0 0 1] growth direction. With CO₂ laser heating replacing furnace heating used conventionally, and using different reactants and forming gases, this method could be easily adopted for other semiconducting inorganic nanostructures in addition to ZnO.     

Heteroepitaxial growth of Cu2O thin film on ZnO by metal organic chemical vapor deposition

Cuprous oxide (Cu₂O) thin films were grown epitaxially on c-axis-oriented polycrystalline zinc oxide (ZnO) thin films by low-pressure metal organic chemical vapor deposition (MOCVD) from Copper(II) hexafluoroacetylacetonate [Cu(C₅HF₆O₂)₂] at various substrate temperatures, between 250 and 400 °C, and pressures, between 0.6 and 2.1 Torr. Polycrystalline thin films of Cu₂O grow as single phase with [1 1 0] axis aligned perpendicular to the ZnO surface and with in-plane rotational alignment due to (2 2 0)_Cu2O(0 0 0 2)_ZnO; [0 0 1]_Cu2O[1 2¯ 1 0]_ZnO epitaxy. The resulting interface is rectifying and may be suitable for oxide-based p–n junction solar cells or diodes.     

Growth and scintillation properties of the Na2W2O7 crystal

The growth and scintillation properties of the Na₂W₂O₇ crystal are reported. The solid reaction between Na₂CO₃ and WO₃ is used to synthesise the Na₂W₂O₇ material. The Na₂W₂O₇ single crystal has been grown by the Bridgman method. And the Na₂W₂O₇ single crystal with sizes 14×7×6 mm³ has been achieved. The transmission spectra, the Ultraviolet fluorescence spectra and the X-ray excited luminescence spectra of the Na₂W₂O₇ crystal are measured. The measurement results show that the Na₂W₂O₇ crystal is a promising intrinsic scintillator.     

Growth of single-crystalline sodium titanate and sodium tungstate one-dimensional nanostructures: Bio-inspired approach using oyster shell

Using oyster shell, single-crystalline Na₂Ti₆O₁₃ and Na₂W₄O₁₃ one-dimensional nanostructures (ODNS) were simply synthesized from granular TiO₂ and WO₃ particles by thermal heating at 700 °C. The oyster shell was used as a source of both sodium and carbon dioxide, which have an effect on unidirectional growth of single-crystalline Na₂Ti₆O₁₃ and Na₂W₄O₁₃ from TiO₂ and WO₃. The growth of sodium metal oxide ODNS from metal oxide particles was reproduced by replacing oyster shell with chemical reagents (NaCl, CaCO₃) or gas (CO₂), allowing identification of the main factors for the growth of ODNS. The characteristics of biological material (i.e., oyster shell) lend certain advantages in the fabrication of sodium metal oxide ODNS: (a) low processing temperature with high yield; (b) an eco-friendly method; and (c) no requirement of additional processes such as separation or washing. This work suggests a new approach for using biological material for the crystal growth of nanostructured materials.     

A catalyst-free method to silicon nanowires at relative low temperature

Well-crystallized straight Si nanowires (SiNWs) were successfully prepared in large scale via a facile reaction between NaN₃ and Na₂SiF₆ at 600 °C without using any catalyst. Characterization by X-ray powder diffraction and transmission electron microscopy demonstrates that the as-obtained product is pure-phase cubic SiNWs with diameters of 40 nm or so, and lengths of several micrometers. And the SiNWs with spherical tips can be obtained at a temperature as low as 300 °C. Heating temperature and holding time have crucial influence on the synthesis and morphology of the SiNWs. An oxide-assisted growth mechanism is responsible for the formation of the SiNWs.     

A simple method to synthesize α-Si3N4, β-SiC and SiO2 nanowires by carbothermal route

α-Si₃N₄ nanowires, β-SiC nanowires and SiO₂ amorphous nanowires are synthesized via the direct current arc discharge method with a mixture of silicon, activated carbon and silicon dioxide as the precursor. The α-Si₃N₄ nanowires, β-SiC nanowires and SiO₂ amorphous nanowires are about 50–200 nm in stem diameter and 10–100 μm in length. α-Si₃N₄ nanowires and β-SiC nanowires consist of a solid single-crystalline core along the [0 0 1] and [1 1 1] directions, respectively, wrapped within an amorphous SiO_x layer. The direct current arc plasma-assisted self-catalytic vapor–solid and/or vapor–liquid–solid (VLS) growth processes are proposed as the growth mechanism of the nanowires.     

Hydrothermal synthesis of Bi2Te3 nanowires through the solid-state interdiffusion of Bi and Te atoms on the surface of Te nanowires

Polycrystalline Bi₂Te₃ nanowires were prepared by a hydrothermal method that involved inducing the nucleation of Bi atoms reduced from BiCl₃ on the surface of Te nanowires, which served as sacrificial templates. A Bi–Te alloy is formed by the interdiffusion of Bi and Te atoms at the boundary between the two metals. The Bi₂Te₃ nanowires synthesized in this study had a length of 3–5 μm, which is the same length as that of the Te nanowires, and a diameter of 300–500 nm, which is greater than that of the Te nanowires. The experimental results indicated that volume expansion of the Bi₂Te₃ nanowires was a result of the interdiffusion of Bi and Te atoms when Bi was alloyed on the surface of the Te nanowires. The morphologies of Bi₂Te₃ are strongly dependent on the reaction conditions such as the temperature and the type and concentration of the reducing agent. The morphologies, crystalline structure and physical properties of the product were analyzed by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED) and X-ray photoelectron spectroscopy (XPS).     

Scale-up synthesis of zinc borate from the reaction of zinc oxide and boric acid in aqueous medium

Synthesis of zinc borate was conducted in a laboratory and a pilot scale batch reactor to see the influence of process variables on the reaction parameters and the final product, 2ZnO·3B₂O₃·3.5H₂O. Effects of stirring speed, presence of baffles, amount of seed, particle size and purity of zinc oxide, and mole ratio of H₃BO₃:ZnO on the zinc borate formation reaction were examined at a constant temperature of 85 °C in a laboratory (4 L) and a pilot scale (85 L) reactor. Products obtained from the reaction in both reactors were characterized by chemical analysis, X-ray diffraction, particle size distribution analysis, thermal gravimetric analysis and scanning electron microscopy. The kinetic data for the zinc borate production reaction was fit by using the logistic model. The results revealed that the specific reaction rate, a model parameter, decreases with increase in particle size of zinc oxide and the presence of baffles, but increases with increase in stirring speed and purity of zinc oxide; however, it is unaffected with the changes in the amount of seed and reactants ratio. The reaction completion time is unaffected by scaling-up.     

Microstructural characteristics and crystallographic evolutions of Ga-doped ZnO films grown on sapphire substrates at high temperatures by RF magnetron sputtering

The microstructural characteristics and crystallographic evolutions of Ga-doped ZnO (GZO) films grown at high temperatures were examined by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The GZO films with various film thicknesses were grown on (0 0 0 1) Al₂O₃ substrates at 750 °C by RF magnetron sputtering using a 2 wt% Ga-doped ZnO single target. The (0 0 0 2) ZnO peaks in the XRD patterns shifted to a higher angle with increasing film thickness and an additional (1 0 1¯ 1) ZnO peak was observed in the final stage of film growth. HRTEM showed the epitaxial growth of GZO films in the initial growth stage and the formation of surface protrusions in the intermediate stage due to elastic relaxation. The surface protrusions consisted of {1 0 1¯ 1}, {1 0 1¯ 3}, and {0 0 0 2} planes. After the surface protrusions had formed, a GZO film with many c-axis tilted grains formed due to plastic relaxation, where the tilted grain boundaries had an angle of 62° to the substrate. The formation of the protrusions and c-axis tilted grains was closely related to the strain status of the film induced by Ga incorporation, high-temperature growth and a high film thickness.     

Growth characteristics of ultra long double-ended acicular ZnO synthesized by a hydrothermal process

Double-ended acicular ZnO structure can be synthesized via a hydrothermal process with tetramethylammonium hydroxide and zinc acetate as precursors and polyvinyl alcohol (PVA) as a structure-directing agent. The as-prepared ZnO products show the well crystalline wurtzite structure with growth direction along [0 0 0 1]. For the first time, PVA is found to be employed as a reservoir of Zn²⁺ ions in the present study, and can control the concentration of Zn²⁺ in reaction solution, and the acicular morphology can be formed at the two ends of the 1-D ZnO structure, due to the effect of secondary growth that occurs as the sufficient concentration of Zn²⁺ ions chelated by PVA releasing to the reaction solution. Furthermore, the size of the 1-D ZnO structure can be tuned by different amounts of PVA addition.     

Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2

High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH₃ and N₂:H₂ at 900 °C. These exhibited intense, near band edge photoluminescence at 3.42 eV in comparison to GaN NWs with non-uniform diameters obtained under a flow of Ar:NH₃, which showed much weaker band edge emission due to strong non-radiative recombination. A significantly higher yield of β-Ga₂O₃ NWs with diameters of ≤50 nm and lengths up to 10 μm were obtained, however, via the reaction of Ga with residual O₂ under a flow of Ar alone. The growth of GaN NWs depends critically on the temperature, pressure and flows in decreasing order of importance but also the availability of reactive species of Ga and N. A growth mechanism is proposed whereby H₂ dissociates on the Au nanoparticles and reacts with Ga giving Ga_xH_y thereby promoting one-dimensional (1D) growth via its reaction with dissociated NH₃ near or at the top of the GaN NWs while suppressing at the same time the formation of an underlying amorphous layer. The higher yield and longer β-Ga₂O₃ NWs grow by the vapor liquid solid mechanism that occurs much more efficiently than nitridation.     

Decisive role of Au layer on the oriented growth of ZnO nanorod arrays via a simple aqueous solution method

Vertically aligned arrays of ZnO nanorod were synthesized on the Au/SiO₂/Si(1 0 0) substrate by a simple aqueous solution growth process, without pre-prepared ZnO seed layer. For comparison, glass and SiO₂/Si were also used as substrates, and the results show that the Au layer plays a decisive role in orienting the growth of the ZnO nanorod. The effects of other growth parameters, including Zn²⁺ concentration and growth time, on morphology, density, and orientation of the ZnO nanostructure were also studied and with longer reaction time, a new structure namely ZnO nanotip was obtained. Moreover, the growth mechanism of ZnO nanorod arrays grown on the Au/SiO₂/Si substrate was proposed.     

Synchrotron X-ray diffraction studies of heteroepitaxial ZnO films grown by pulsed laser deposition

Heteroepitaxial ZnO films were grown by pulsed laser deposition on various substrates such as GaN-buffered C-Al₂O₃, C-Al₂O₃, A-Al₂O₃, and R-Al₂O₃. The epitaxy nature of the films was investigated mainly by synchrotron X-ray diffraction. The results showed that the GaN interlayer plays a positive role in growing an unstrained, well-aligned epitaxial ZnO film on the basal plane of Al₂O₃. Importantly, the ZnO film grown on R-Al₂O₃ has two differently aligned domains. The dominant (1 1 0) oriented domain has much better alignment in the in-plane direction than the minor portion of (0 0 1) oriented domain, while in the out-of-plane direction the two domains have almost the same mosaic distribution.     

Specific surface free energy and morphology of chlorapatite crystals studied by modified Wilhelmy method

Barium chlorapatite [Ba₅Cl(PO₄)₃] and strontium chlorapatite [Sr₅Cl(PO₄)₃] crystals were grown from a sodium chloride flux. The aspect ratios for these crystals were distributed in the range 1–9, and maximum number of crystals was observed in the range 3–4 for both chlorapatite crystals. The contact angle of water on (1 0 1? 0) face of each chlorapatite crystal was observed using a modified Wilhelmy method, where the change of liquid weight was measured instead of the crystal weight. The contact angle depends on the aspect ratio of the crystal. Both the advancing and the receding contact angles showed maximum value when the aspect ratios of the crystals were approximately 4 for both Ba₅Cl(PO₄)₃ and Sr₅Cl(PO₄)₃ crystals. The specific surface free energy of (1 0 1? 0) face was calculated using Neumann’s equation. The (1 0 1? 0) face of the crystals of the aspect ratio 4 has a minimum specific surface free energy, indicating that they have the most stable (1 0 1? 0) face when the aspect ratio is 4.     

Crystal growth, characterization and spectroscopic study of europium-doped NaY(PO3)4

Europium-doped NaY(PO₃)₄ single crystals have been synthesized by the flux method with sizes around 1 mm³. The unit cell parameters at room temperature refined by X-ray powder diffraction are a=7.1510(4) Å; b=13.0070(8) Å; c=9.6973(2) Å; β=90.606(3)°, Z=4 with the space group P2₁/n in monoclinic system. The present single crystals have a needle shape, they are elongated along the a crystallographic direction, and their size is in the 500 μm–1 mm range. The linear thermal expansion tensor parameters were determined, being the maximum value along the b direction, 16.1×10⁻⁶ K⁻¹ and the minimum along the a direction being 11.7×10⁻⁶ K⁻¹. The IR vibration modes attributed to the group P–O are consistent with the crystallographic data concerning the chain aspect of the phosphate anion. This material melts incongruently at 1141 K. Intense visible emissions attributed to Eu^{3+ 5}D₀→⁷F₁, ⁵D₀→⁷F₂ and ⁵D₀→⁷F₄, electronic transitions have been observed after pumping at 355 nm at room temperature.     

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B₂O₃) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm⁻¹ in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B₂O₃ liquid was about 10¹⁶ cm⁻³ and was almost the same as that in a Ge crystal grown without B₂O₃. Oxygen concentration in a Ge crystal was enhanced to be greater than 10¹⁷ cm⁻³ by growing a crystal from a melt fully covered with B₂O₃; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×10¹⁷ cm⁻³. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.     

Synthesis,morphology and phase transition of the zinc molybdates ZnMoO4·0.8H2O/α-ZnMoO4/ZnMoO4 by hydrothermal method

ZnMoO₄ with a rhombus sheet or flower-like structure, α-ZnMoO₄ and needle-like ZnMoO₄·0.8 H₂O were successfully synthesized by simple hydrothermal crystallization processes with citric acid. ZnMoO₄·0.8 H₂O was easily synthesized in a shorter reaction time (2 h) at a higher reactant concentration. It gradually transformed into ZnMoO₄ with a monoclinic wolframite tungstate structure with an increased reaction time, and pure ZnMoO₄ was obtained with a longer reaction time (8 h). Citric acid (CA) played an important role in controlling the morphology of the as-obtained molybdates. The α-ZnMoO₄ and ZnMoO₄ were synthesized by heating ZnMoO₄·0.8 H₂O at 130 °C for 4 h and 8 h, respectively, under hydrothermal conditions. With transforming of ZnMoO₄·0.8 H₂O to α-ZnMoO₄ and further to ZnMoO₄, the needle-like crystals gradually disappeared and were transformed into crystals with rhombus sheet morphology and then further to pentacle or flower-like crystals that can be ascribed to continuous splitting and growing of the rhombus sheets.     

Growth and photoluminescence properties of vertically aligned SnO2 nanowires

Vertically aligned SnO₂ nanowires (NWs) were grown for the first time by a vapor–liquid–solid method on c-sapphire with gold as a catalyst under Ar gas flow. Electron backscatter diffraction analysis indicated the NWs are single crystalline having the rutile structure, grow vertically along the [1 0 0] direction, and exhibit a consistent epitaxial relationship where lattice mismatch is estimated to be 0.3% along the SnO₂ [0 1 0] direction. The growth of these NWs is sensitive to many parameters, including growth duration, substrate type, source vapor concentration, and the thickness of the catalyst layer. Photoluminescence measurements at room temperature showed that the vertically aligned NWs exhibit an intense transition at 3.64 eV, a near band-edge transition which is rarely observed in SnO₂.     

Structural and infrared properties of zinc oxide film and nanowires

The structural and infrared properties of the highly (00.2) oriented ZnO film, randomly grown Au-catalyzed ZnO nanowires (NWs) and vertically aligned self-catalyzed ZnO NWs were compared. In the XRD analysis, (0 0 2) diffraction intensity of self-catalyzed ZnO NWs was enhanced mainly attributed to the preferential growth of NWs in [0 0 0 1] as compared to the ZnO film and the randomly grown Au-catalyzed ZnO NWs. The high UV-to-green emission ratio of self-catalyzed ZnO NWs in room temperature PL measurement indicates that they had a better crystal quality as compared to Au-catalyzed ZnO NWs and ZnO film. Infrared spectroscopy has been used to characterize these films and nanowires too. The phonon peak 407 cm⁻¹ which related to the transverse optical (TO) vibrations perpendicular to the optical axis was observed in the IR reflectivity measurements on the highly c-oriented ZnO film. The IR peaks that appeared in the 550–580 cm⁻¹ region of the spectra of the specimens could be assigned to the ZnO NWs as it was not observed in the ZnO film. These peaks were observed in the 550–580 cm⁻¹ region in both s- and p-polarized light for the randomly grown Au-catalyzed ZnO NWs. In contrast, the IR peak at 580 cm⁻¹ was clearly shown in p-polarized light but not in the s-polarized light for vertically aligned ZnO NWs. This indicated that the vibration was polarized along the vertically aligned ZnO NWs. The (00.2) orientation of the ZnO specimens could be identified by comparing the p- and s-polarized IR spectra.