Elemental depth profiling of a-Si1−xGex:H films by elastic recoil detection analysis and secondary ion mass spectrometry

The hydrogen content in a-Si_1−xGe_x:H thin films is an important factor deciding the density and the optical band gap. We measured the elemental depth profiles of hydrogen together with Si and Ge by elastic recoil detection analysis (ERDA) combined with Rutherford backscattering (RBS) using MeV He²⁺ ions. In order to determine the hydrogen depth profiles precisely, the energy- and angle-dependent recoil cross-sections were measured in advance for the standard sample of a CH₃⁺-implanted Si substrate. The cross-sections obtained here are reproduced well by a simple expression based on the partial wave analysis assuming a square well potential (width: r₀ = 2.67 × 10⁻¹³ cm, depth: V₀ = −36.9 MeV) within 1%. For the a-Si_1−xGe_x:H films whose elemental compositions were determined by ERDA/RBS, we measured the secondary ions yields of HCs₂⁺, SiCs₂⁺, H⁻, Si⁻ and Ge⁻ as a function of Ge concentration x. As a result, it is found that the useful yield ratios of HCs₂⁺/SiCs₂⁺, H⁻/Si⁻ and Ge⁻/Si⁻ are almost constant and thus the elemental depth profiles of the a-Si_1−xGe_x:H films can be also determined by secondary ion mass spectrometry (SIMS) within 10% free from a matrix effect.     

Pressure dependence of the electric field gradient in Sb and Sb1−x M x (M=ln,Zn, Ge,Pb, Cd,Sn) at the site of111Cd

Using the¹¹¹Cd-TDPAC (time differential perturbated angular correlation) method, the pressure dependence of the electric field gradient (EFG) in Sb and Sb_1–x M _x (M=ln, Zn, Ge, Pb, Cd, Sn) was investigated. The application of a phenomenological ansatz for the parametrisation of the pressure and temperature dependence of the EFG made it possible to combine temperature data gained in former studies [1], [2] with the pressure dependent data presented in this paper. The resulting pressure dependence of –2±0.2 MHz/kbar is shown to be independent of concentration and element of admixture. Results for the volume and explicit temperature dependence agree with existing information on the mixed system Sb_1–x M _x (M=ln, Zn, Ge, Pb, Cd, Sn); the investigation of the EFG in Sb_1–x–y M _x Pb _y showed that the resulting EFG may be interpreted as the weighted sum of the individual contributions of the two metals.This paper is dedicated to Prof. Dr. W. Kreische on the occasion of his 60th aniversary on 02.02.1995     

Impurity distribution and electrical characteristics of boron-doped Si1−x Ge x /Si p +/N heterojunction diodes produced using pulsed UV-laser-induced epitaxy and Gas-immersion laser doping

A two-step pulsed UV-laser process which independently controls the metallurgical and electrical junction depth of a Si_1–x Ge _x /Si heterojunction diode has been implemented. Pulsed Laser-Induced Epitaxy (PLIE) combined with Gas-immersion Laser Doping (GILD) are used to fabricate boron-doped heteroepitaxial p ⁺/N Si_1–x Ge _x /Si layers and diodes. Borontrifluoride is used as the gaseous dopant source in the GILD process step. Boron incorporation and activation are investigated as a function of laser energy fluence and the number of laser pulses using SIMS and Halleffect measurements. The dose of incorporated dopant is on the order of 10¹³ cm^–2 per pulse. The B profiles obtained are flat except for a peak at the interface resulting from segregation effects. The B and Ge distributions are compared with shifts in the turn-on voltage of p ⁺/N Si_1–x /Si heterojunction diodes produced by the process. The GILD/PLIE process is spatially selective with the resulting diodes fabricated being quasiplanar. Hole mobilities in the heavily doped Si_1–x Ge _x films are found to be slightly lower than in comparable Si films.Presently at the Oregon Graduate Institute, Beaverton, OR 97006, USA     

Mössbauer study of the ternary system (Fe1−xVx)3 Ge

Three crystallographically different structures of (Fe_1–xV_x)₃ Ge have been studied by⁵⁷Fe Mössbauer spectroscopy. The hexagonal phase, stable for low values ofx, is ferromagnetic with the spins parallel to thec-axis above a critical temperature, where a spin flip to thec-plane takes place. A V/Fe substitution in the near surrounding of an iron atom leads to a decrease in the isomer shift of –0.02 mm/s and an estimated reduction in the magnetic moment of 0.31 _B from 2.07 _B. A result for the intermediate cubic closed packed structure is that V populates only one type of metal sites. Furthermore, from similarities with-Fe the average value of the change in isomer shift is found to be +0.075 mm/s and +0.02 mm/s per Ge/Fe substitution in the 1nn and 2nn shells, respectively. The spin polarization effect on the magnetic hyperfine field for iron is –8.6%, –0.4%, and –0.6% per Ge/Fe (1nn), Ge/Fe (2nn) and V/Fe (3nn) substitutions, respectively. The simple cubic compound (Fe_0.7V_0.3)₃ Ge is non-magnetic down to at least 5 K. Here a decrease in the isomer shift of –0.05 mm/s is found for a V/Fe (1nn) substitution.On leave from the Department of Nuclear Physics, University of Madras, Madras, India.On leave from the Physics Department, Punjabi University, Patiala, India.     

The effect of H-dilution on the transport properties of doped a-Si1−x Ge x : H alloys

This paper is concerned with the optimization of growth conditions for a-Si_1-x Ge _x :H alloys. It is shown that H-dilution of source gases selectively improves the band transport of electrons without significantly affecting the recombination center density or the band transport of holes. It is further shown that the beneficial effects of H-dilution are most pronounced in alloys with comparable densities of Si and Ge.     

Magnetic and magnetotransport properties of Co-doped manganites with perovskite structure

A systematic study of the doping of the Mn-sites by cobalt in three series of manganites — La_0.76Ba_0.24(Mn_1−xCo_x)O₃ single crystals, La_2/3Ba_1/3(Mn_1−xCo_x)O₃ and La(Mn_1−xCo_x)O₃ ceramics has been performed. It was found that La(Mn_1−xCo_x)O₃ annealed at 800°C in the range 0.4x0.9 is a mixture of ferromagnetic domains with ordered Mn and Co ions and ionically disordered spin-glass domains. In the quenched samples the fraction of spin-glass-type component increases strongly. The La_2/3Ba_1/3(Mn_1−xCo_x)O₃ solid solutions exhibit also an evidence for phase separation in the range 0.5x0.8. All the La(Mn_1−xCo_x)O₃ samples show an insulating behavior, however, magnetoresistance reduces strongly when the cobalt content rises to x=0.5. The La_0.76Ba_0.24(Mn_1−xCo_x)O₃ single crystals show first-order phase transition below their Curie points associated with a change of ground state of the Co²⁺ ions. The magnetic phase diagrams are depicted. The results are discussed in terms of positive Mn³⁺–O–Mn⁴⁺, Mn³⁺–O–Mn³⁺, Mn⁴⁺–O–Co²⁺ and negative Mn⁴⁺–O–Mn⁴⁺, Co²⁺–O–Co²⁺, Co²⁺–O–Mn³⁺ superexchange interactions as well as Co²⁺ and Mn⁴⁺ ionic ordering.     

Optical properties of Stranski–Krastanov grown three-dimensional Si/Si1−xGex nanostructures

Detailed Raman and photoluminescence (PL) measurements are reported for Si/Si_1−xGe_x nanostructures grown by molecular beam epitaxy under near Stranski–Krastanov (S–K) growth mode conditions. In samples with x ranging from 0.096 to 0.53, we observe that an increase in the Raman signal related to Ge–Ge vibrations correlates with (i) a red shift in the PL peak position, (ii) an increase in the activation energy of PL thermal quenching, and (iii) an increase in the PL quantum efficiency. The results indicate that for x>0.5 Ge atoms form nanometer size clusters with a nearly pure Ge core surrounded by a SiGe shell. Time-resolved PL measurements reveal a stretched-exponential long-lived PL component that is associated with compositional and dimensional fluctuations in the SiGe dots.     

Potential of Si1−xGex alloys for Auger generation in highly efficient solar cells

Recent investigation on Si solar cells demonstrated the utility of Auger generation for the creation of more than merely one electron/hole pair per absorbed photon. The semiconductor Si requires a minimum photon energy of about 3.4 eV for this internal carrier multiplication. The current of a Si cell is therefore not significantly increased by Auger generation when the cell is illuminated by an air mass 1.5 spectrum, which contains only few photons with energies above 3.4 eV. Use of Si_1–x Ge _x alloys promises a lower onset energy. Unfortunately, incomplete data on band structures ofrandom Si_1–x Ge _x alloys preclude a detailed quantitative discussion of the full potential for these materials. Nevertheless, (i) analogies to our own quantum efficiency data from pure Si, (ii) the calculated band structure of the hypothetical,ordered zincblende type Si_0.5Ge_0.5 crystal, and (iii) optical data for Si_1–x Ge _x alloys indicate an optimum Ge content ofx=0.6 tox=0.7.     

Photoelectric properties of Pb1−x−y Sn x Ge y Te:In epitaxial films

Pb_1–x–y Sn _x Ge _y Te:In epitaxial films are examined in a wide temperature interval and at various background fluxes. These films have high sensitivity to infrared radiation in the spectral range <20m. The lifetime depends exponentially on temperature and varies from several seconds at T=10 K to 10^–2 s at T=20 K. The two-electron model of Jahn-Teller centers is proposed to explain the results. Multielement photoresistors based on these films are fabricated and D*=1.7×10¹³ cm Hz^1/2 W^–1 at T=25 K is achieved. Noise of the photoresistors is independent of background flux when it varies from 10¹² cm^–2 s^–1 to 10¹⁸ cm^–2 s^–1. As compared with Si:Ga and Ge:Hg photoresistors, the responsitivity is several orders larger at the operating temperature 25–30 K.     

A one-dimensional model with phase transition

Two repellent particles are bound to occupy two among thek _n +1 adjacent sites 0=x ₀ ⁽ⁿ⁾ <x ₁ ⁽ⁿ⁾ <...<x _kn ⁽ⁿ⁾ =1, sayx _q ⁽ⁿ⁾ ,x _q+1 ⁽ⁿ⁾ . Define the Hamiltonian _q ⁽ⁿ⁾ =–ln(x _q+1 ⁽ⁿ⁾ –x _q ⁽ⁿ⁾ ) and the partition function     

Hyperfine field of156Gd in Tb(Zn1−xCux) with x=0, 0.36, 0.46

Time-integral - perturbed angular correlation measurements have been made on¹⁵⁶Gd nuclei in TbZn_1–xCu_x using two Ge(Li) detectors. The hyperfine fields at¹⁵⁶Gd nuclei in TbZn_1–xCu_x at 77 K are found to be –177±26, –104±24 and –27±38 kOe for TbZn, TbZn_0.64Cu_0.36 and TbZn_0.54Cu_0.46, respectively. These values indicate that the transferred hyperfine fields at Gd nuclei are positive due to the exchange interaction of s-f type.     

A new structure of In-based ohmic contacts ton-type GaAs

Electrical, structural and reaction characteristics of In-based ohmic contacts ton-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated bye-beam sputtering Ni, NiIn and Ge targets on VPE-grownn ⁺-GaAs film (1 m, 2 × 10¹⁸ cm^–3) in ultrahigh vacuum as the structure of Ni(200 Å)/ NiIn(100 Å)/Ge(40 Å)/n ⁺-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500–900°C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni₃ln. The lowest specific contact resistivity ( _c) of (1.5 ± 0.5) × 10^–6 cm² measured by the Transmission Line Method (TLM) was obtained after annealing at 700°C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, In _x Ga_{1– x}As phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.This work was supported by the National Natural Sciences Foundation of China (NSFC)     

Structural and optical properties of a-Si1−xCx:H films synthesized by dc magnetron sputtering technique

Hydrogenated amorphous SiC films (a-Si_1−xC_x:H) were prepared by dc magnetron sputtering technique on p-type Si(1 0 0) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6H-SiC). The deposited a-Si_1−xC_x:H film was realized under a mixture of argon and hydrogen gases. The a-Si_1−xC_x:H films have been investigated by scanning electronic microscopy equipped with an EDS system (SEM-EDS), X-ray diffraction (XRD), secondary ions mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR), UV-vis-IR spectrophotometry, and photoluminescence (PL). XRD results showed that the deposited film was amorphous with a structure as a-Si_0.80C_0.20:H corresponding to 20 at.% carbon. The photoluminescence response of the samples was observed in the visible range at room temperature with two peaks centred at 463 nm (2.68 eV) and 542 nm (2.29 eV). In addition, the dependence of photoluminescence behaviour on film thickness for a certain carbon composition in hydrogenated amorphous SiC films (a-Si_1−xC_x:H) has been investigated.     

Far-infrared spectra of Pb1−xMnxTe alloys

Far-infrared reflectivity spectra of Pb_1−xMn_xTe (0.0001x0.1) single crystals were measured in the 10–250 cm⁻¹ range at room temperature. The analysis of the far-infrared spectra was made by a fitting procedure based on the model of coupled oscillators. In spite of the strong plasmon–LO phonon interaction, we found that the long wavelength optical phonon modes of these mixed crystals showed an intermediate one–two mode behavior.     

Properties of amorphous ternary alloy films a-SixCyGez:H prepared by magnetron co-sputtering

Amorphous Si_xC_yGe_z:H (x+y+z=1; z∼0.1) have been deposited by reactive sputtering of Si–Ge composite target in argon–methane gas mixtures. The effects of the addition of Ge and the methane partial pressure P on the film properties were investigated. At high P, the addition of Ge could improve the reduction of the photoconductivity with increasing P observed in a-Si_xC_y:H (z=0).     

Self-assembling of C and Sn in Ge

Self-assembling of isoelectronic C and Sn impurities in Ge is predicted. The formation of the 1C4Sn tetrahedral cells is thermodynamically profitable in Ge-rich C_xSn_yGe_1−x−y (4x<y) alloys in the ultra dilute C impurity limit with 1×10^-8x1×10^-3. The concentrations of Sn atoms when all C atoms are surrounded only by Sn atoms are estimated for the lower molecular beam epitaxy, intermediate annealing and higher bulk crystallization temperatures. The origin of this phenomenon is a considerable decrease of the strain energy after self-assembling. The same self-assembling in Si is thermodynamically non-profitable due to the large cohesive energy of Si–C chemical bonds.     

Magnetism and Superconductivity inCeCu2(Si1−xGex)2 Probed by Cu NQR

We report Cu-NQR results on Ge-doped heavy-fermion superconductor CeCu₂(Si_1–x Ge _x )₂ (0<x0.2) and undoped Ce_0.99Cu_2.02Si₂. The main effect of the Ge doping is considered to be a negative pressure, since the strength of hybridization decreases by the Ge doping. With increasing x, the dynamical characteristics of the magnetic order at x=0 change to more static ones which suggests a localized regime above x0.25. From the derived T–x phase diagram, it is suggested that the magnetic and the superconducting phases are almost degenerate in undoped CeCu₂Si₂. An exotic interplay between the magnetism characterized by the slow fluctuations and the superconductivity is implied in the region of small x.     

掺杂的非晶态硅基合金薄膜的高温电子自旋共振研究

本文研究了掺杂(B和P)和未掺杂的a-Si_1-xC_x:H和a-Si_1-xN_x:H膜在高温下的电子自旋共振(ESR)特性。ESR的测量是在温度连续变化的过程中进行的。实验结果表明:掺B的a-Si_1-xC_x:H和a-Si_1-xN_x:H膜的ESR吸收谱,可以分解成两种性质不同的ESR吸收谱的叠加(g₁≈2.005和g₂≈2.010),g₁是硅悬挂键(Si)的贡献,g₂是价带尾态定域化空穴的贡献。随温度的上升,定域化空穴的密度比Si下降得更快。在温度不太高时,定域化空穴的密度远大于Si,但在温度较高时,Si的贡献是主要的。 关键词：     

Mismatch and electron mobility in MBE GaxIn1−xas epitaxial layers on InP substrates

Composition inhomogeneity in nearly matched epilayers of the ternary semiconductor alloy Ga_xIn_1–xAs (x close to 0.47), grown by molecular beam epitaxy (MBE) on (001) InP substrates is correlated to variation of the lattice mismatch by x-ray imaging and local diffractometry. Misfit dislocations are shown to develop in areas of large misfit (above 2 × 10^–3) and are at the origin of a severe degradation of the electron mobility: an increase by a factor of about 4 in the intrinsic misfit (2.3 × 10^–3 compared to 0.6 × 10^–3) results in a 35 % reduction of the 77 K electron mobility.Part of this work has been done while this author was with Thomson-CSF Central Research Laboratory, Orsay, France     

Influence of the martensitic structure transformation in LaAg x In1−x on the magnetic properties of substituted Ce

The martensitic phase transformation has no observable effect on the magnetic susceptibility of Ce in LaAg _x In_1–x which agrees with the assumption of a crystal field splitting by 300 K of the² F _5/2 ground state of Ce³⁺ ions. The magnetic ordering temperature and the Kondo minimum move to higher temperatures together with the martensitic phase transformation when the Ag concentration is reduced. This behavior can be related qualitatively to the lowering of the 5d – e _g levels in the center of the Brillouin-zone with increasing In content.