磁控溅射Cl掺杂CdTe薄膜的孪晶结构与电学性质

CdTe用作薄膜太阳能电池吸收层需要经过氯处理才能得到高的光电转换效率,其中Cl原子的作用机理仍然没有完全被理解.实验发现Cl原子主要偏聚在CdTe晶界处,对晶界有钝化作用,而有第一性原理计算认为Cl原子掺入CdTe晶格能够引入浅能级提高光电转换效率.为了验证Cl原子掺杂是否对CdTe的光电转换效率有益,本文通过磁控溅射制备了100 ppm(ppm=1/1000000)Cl原子掺杂的CdTe(CdTe:Cl)薄膜并研究了薄膜的晶体结构与电学性质,同时对比了正常氯处理的无掺杂CdTe薄膜与CdTe:Cl薄膜之间的性质区别.实验发现Cl原子掺杂会在CdTe:Cl中形成大量仅由几个原子层构成的孪晶,电子和空穴在CdTe:Cl薄膜中没有分离的传导通道,而在氯处理后的CdTe薄膜中电子沿晶界传导,空穴沿晶粒内部传导.磁控溅射沉积的CdTe:Cl多晶薄膜属于高阻材料,退火前载流子迁移率很低,退火后载流子浓度降低到本征数量级,电阻率提高.CdTe:Cl薄膜电池效率远低于正常氯处理的无掺杂CdTe薄膜电池效率.磁控溅射制备的非平衡重掺杂CdTe:Cl多晶薄膜不适合用作薄膜太阳能电池的吸收层.     

Electronic behaviour of thin-film CdTe solar cells

New support is given for one of the controversial models about the electronic consequences of the CdCl₂ treatment of a thin-film CdTe solar cell: the assumption that deep acceptor states are introduced in the bulk of the CdTe layer as a result of the CdCl₂ treatment. A detailed study of the doping profile using capacitance–voltage (C-V) measurements is performed as a first step. The above assumption is numerically simulated with our simulation programme SCAPS. In this way, anomalous features of the C-V measurements are fully explained, and further correspondence between calculated and measurable quantities is found. Received: 1 March 1999 / Accepted: 28 March 1999 / Published online: 1 July 1999     

Study of acceptor states in CdTe by donor-acceptor pair excitation luminescence

Excitation of donor-acceptor pair luminescence has been studied in CdTe doped with lithium or chlorine. The excitation spectrum of the lithium acceptor is determined and fitted with the effective mass theory of Baldereschi and Lipari. Revised values of the valence band parameters are deduced: μ = 0.8, δ = 0.054, Ry = 24 meV. The analysis of the 1.45 eV luminescence band in compensated Cl-doped crystals shows the existence of donor-acceptor pair transitions. Three acceptor centers are identified: E_A = 89, 111 and 119 meV, and the contribution of a deep donor (E_D > 40 meV) is demonstrated. Besides intracentre type excitation transitions of the 1.45 eV band have been observed in non-compensated chlorine-doped crystals. Thus several recombination channels and distinct acceptor states contribute to the composite 1.45 eV luminescence band.     

The effects of configuration mixing on excited charmonium decays

Configuration mixing betwenn ψ, ψ′ and ψ″ is considered in two models. In one model the confining potential consists of a scalar and a vector part; in the other model the vector confining potential interacts with a colour anomalous magnetic moment. It is shown that strong configuration mixing affects theEl transition rate and electronic decay widths of the vector mesons considerably.     

Density functional theory calculations establish the experimental evidence of the DX center atomic structure in CdTe

The In DX center and the DX-like configuration of the Cd host atom in CdTe are investigated using density functional theory. The simultaneous calculation of the atomic structure and the electric field gradient (EFG) allows one to correlate the theoretically predicted structure of the DX center with an experimental observable, namely, the EFG obtained from radioactive 111In/111Cd probe atoms in In doped CdTe. In this way, the experimental identification of the DX center structure is established.     

Five-beam magneto-optical trap and optical molasses

We have operated a magneto-optical trap and optical molasses for the laser cooling of cesium atoms on the basis of a five-beam laser configuration. For the magneto-optical trap two laser beams counterpropagate along the axis of a quadrupole trap and the remaining three beams propagate in the orthogonal plane at 120° to each other. The same optical configuration was used for the optical molasses. We have tested the efficiency in atom collection and the temperatures reached in both cooling processes. In comparison to previous results on a six-beam configuration, a lower number of atoms is collected, while comparable densities are realized. The atomic temperatures have been measured through a delayed shadow-image technique, where one of the running-wave cooling beams produces an absorptive image of the atoms on a camera. Received: 14 January 1999 / revised version: 23 June 1999 / Published online: 8 September 1999     

Electronic transport properties of graphene/Al2O3 (0001) interface

The electronic structure and transport properties of a single layer of graphene (Gr) on α-Al₂O₃ surface are studied using the density functional theory (DFT). We present three models that take into account the atom at the termination of the alumina surface: a) Al atoms, with the center of the Gr hexagon directly over an Al atom; b) Al atoms, with a carbon directly positioned above an Al atom; c) oxygen atoms. Two processes of geometric optimization were used: (i) All the atoms of the supercell were allowed to move in accordance with the BFGS quasi-Newton algorithm; (ii) The atoms of the three topmost layers of the α-Al₂O₃ (0001) slab, including the C atoms, were allowed to move, whereas the atoms of the remaining layers were frozen in their respective atomic bulk positions. The first two models preserve qualitatively the electronic structure of the pristine Gr using the geometric optimization process (i) whereas, in the third model this structure was lost due to a significant charge transfer between the carbon and oxygen atoms irrespective of the optimization procedure. However, models (a) and (b) with the optimization (ii) reveal a p-type semiconducting behavior.     

Charge distribution in structurally disordered systems

In this paper we calculate the charge distribution n(Q) for a structurally disordered system of identical atoms. The atoms have non-zero charges associated to them only because the spatial configuration around each atom is different. The systems considered are those for which an atomic basis set is adequate and an iterative tight binding scheme, where the matrix elements depend on the atomic charges, is used. We study the effect of including explicitly the electrostatic interaction among the charges associated to the atoms in the calculation of n(Q). We propose that the atomic positions of a totally random configuration be modified by amounts proportional to the electrostatic forces on the atoms. We call this a relaxation effect. We find that the new atomic configurations give a narrower n(Q) although they have practically the same energy and radial distribution function as the original configuration.     

Investigation of the effect of CdCl2 processing on vacuum deposited CdS/CdTe thin film solar cells by DLTS

Thin film CdS/CdTe solar cells have been prepared by conventional vacuum deposition technique. Deep level transient spectroscopy (DLTS), temperature and frequency dependent capacitance-voltage (C-V) measurements were utilised to investigate the performance limiting defect states in the CdTe layer subjected to the post deposition treatments such as CdCl₂-dipping and/or annealing in air. Five hole traps, all of which have been previously reported in the literature, were identified in as-grown CdTe at 0.19, 0.20, 0.22, 0.30 and 0.40 eV above the valence band. A single hole trap level has been evidenced at 0.45 eV after both post deposition heat and CdCl₂ treatments.     

First-principle study on electronic structure and magnetic properties of organic transition metal compound: Trans-tetrachloro-bis-(pyridine)-rhenium

The electronic structure and magnetic properties of the trans-tetrachloro-bis-(pyridine)-rhenium compound with the Re atom as the metallic magnetic center, were studied using the full potential linearized augmented plane wave method (FP-LAPW) within the density functional theory. The calculated total energies revealed that the compound has a stable antiferromagnetic (AFM) ground state, which is in agreement with the experiment. The band structure of the compound has a semiconductor character. The calculated magnetic moment per molecule is 3.00 μ_B, the magnetic moments are mainly from the Re atoms with a 5d³ electronic configuration. The AFM interaction between ferromagnetically coupled Re atom layers passes through the p orbitals of the Cl ligands near Re atoms.     

Microscopic electro-optical atom trap on an evanescent-wave mirror

We put forward the idea of a surface-mounted microscopic electro-optical atom trap. The trap is formed on an evanescent-wave atom mirror by the strongly localized static electric field of two oppositely charged transparent electrodes placed close to each other. The electrodes are embedded in a refractive-index-matched thin dielectric layer on the surface of a glass prism. In our example, the phase-space density in the trap center reaches 0.1, when the trap is loaded with atoms from a gravito-optical surface trap.Received: 16 October 2003PACS: 32.80.Pj Optical cooling of atoms; trapping - 39.25. + k Atom manipulation (scanning probe microscopy, laser cooling, etc.)     

Synthesis,electrical properties and transport mechanisms of thermally vacuum evaporated CdTe nanocrystalline thin films

A stoichiometry CdTe nano-structured powder was synthesized by chemical process. Thin films of different thicknesses (40, 60, and 100 nm) of CdTe were prepared by thermal evaporation method onto silicon substrates. Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of CdTe nanocrystalline thin films deposited on p-Si as heterojunction have been investigated. At low voltages, current in the forward direction was found to obey the diode equation and the conduction was controlled by thermionic emission mechanism. Also, various electrical parameters were determined from the I–V and C–V analysis. The thickness dependence of the obtained capacitance–voltage (C–V) characteristics was also considered.     

Capacitance Transient X-ray Absorption Spectroscopy of semiconducting structures

A new technique for the detection of X-ray absorption in multilayer structures, Capacitance Transient X-ray Absorption Spectroscopy (CapTXAS), has been developed. CapTXAS technique utilizes the fact that excess carriers generated in the semiconductor structure under the X-ray excitation can be captured with deep level electronic states at the structure interface(s) within the space charge region of the Schottky-diode giving rise to the diode capacitance changes. Short periodical refilling electric pulses are applied to the structure to define the initial trap occupancy and the first derivative of the capacitance transients after the bias voltage recovery is measured. We installed this technique at BESSY Russian–German Beam Line and applied to the measurements on two test semiconductor structures: Au–/nickel–phtalocyanine/–silicon and Al-bonded silicon wafer.     

Specific features of the electrical resistance of half-metallic ferromagnetic alloys Co2CrAl and Co2CrGa

It has been shown by comparing the results of studying the electrical and magnetic properties of the half-metallic ferromagnetic Heusler alloys Co₂CrAl and Co₂CrGa with the calculations of their electronic structure that high values of the electrical resistivity ρ are caused by a disordered distribution of atoms over the sites of the L2₁ cubic structure, and the anomalous behavior of ρ(T) is associated with the transformation of the electronic spectrum due to the ferromagnetic-to-paramagnetic transition.     

Copper as an electron trap in GaAs0.6P0.4

An electron trap having an energy level of 0.14 eV from the conduction band edge was found in the bulk of copper-diffused VPE-grown n-GaAs_0.6P_0.4 by conventional DLTS measurements and by pulse-duration dependent capacitance amplitude measurements. The capture cross section at room temperature is about 1.0×10^–21 cm² and has a weak temperature dependence. These properties are attributed to a non-repulsive center having a capturing mechanism which involves multiphonon emission processes with hardly any lattice relaxation. Evolution of the spatial distributions of the traps with time under junction electric field were studied. The results suggest that the trap is positively charged and has a high diffusivity under electric field. The center can thus be identified as positively charged interstitial copper ion rather than some form of copper complexes.     

The small signal behavior of SCLC-diodes with deep traps

Theoretical and experimental investigations on the small signal behavior of sclc-diodes containing deep levels were performed. The experimental results were obtained from high resistivity Au-compensated n⁺in⁺-silicon samples. The measurements of the frequency dependent conductance and capacitance are consistent with theory up to frequencies ωT>1. From the bias dependence of the capacitance a method is deduced to determine the capture time constant easily and with high accuracy and, if the trap concentration is already known, the capture cross section. The value obtained for the gold acceptor level agrees well with that determined by means of transient current measurements.     

A mechanism for the anomalous photovoltaic effect in cadmium telluride

The anomalous photovoltaic effect has been studied in CdTe films and the results related to surface photovoltage measurements on cleaved crystals. A new model, based on surface photovoltages in angled microcrystallites is presented and accounts for the observed effects.     

冷原子的双阱微磁表面囚禁

提出了两种新颖的采用载流导线的双阱微磁表面囚禁方案(即双U形与双Z形导线囚禁)。通过改变囚禁方案中直导线中的电流方向，即可将双U形导线囚禁改变为双Z形导线囚禁；如果逐渐减小直导线中的电流大小，即可将一个双阱微磁囚禁连续地合并为一个单阱微磁囚禁，反之亦然。详细计算和分析了上述两种载流导线囚禁方案的磁场及其梯度的空间分布。研究发现在导线中通以较小的电流，即可在导线表面附近产生很大的磁场梯度及其曲率。例如当电流为O．2A时，其磁场梯度和曲率可分别达到0．2T／cm和10T／cm2以上。由于双U形导线囚禁中存在磁场零点，而双Z形导线囚禁中仅存在磁场最小值，所以双U形导线囚禁仅适用于制备双样品磁光囚禁(MOT)或研究中性原子的冷碰撞，而双Z形导线囚禁除了可用于研究原子的冷碰撞之外，还可以用于制备双样品玻色-爱因斯坦凝聚(BEC)或实验研究双阱玻色-爱因斯坦凝聚的性质等。     

Novel superfluidity in a trapped gas of Fermi atoms with repulsive interaction loaded on an optical lattice

We investigate a possibility of superfluidity in a trapped gas of Fermi atoms with a repulsive interaction in the presence of an optical lattice. Applying the exact diagonalization method to a one-dimensional Hubbard model including the trap potential, we find that, when the strength of the repulsive interaction exceeds a critical value, the binding energy of two Fermi atoms becomes negative below the half-filling case, indicating that an attractive interaction effectively works between Fermi atoms. In this case, a "Mott insulating core" appears in the center of the trap, where each site is occupied by one atom. The Cooper-pair correlation strongly develops between atoms in the left- and right-hand sides of this core.     

The effect of Doppler broadening on dispersive and absorptive properties in atomic systems with two-photon interference

The effect of Doppler broadening on dispersive and absorptive properties is theoretically investigated in the hot four-level electromagnetically induced transparency (EIT) atomic systems with two different types of two-photon interference. It is found that the dispersive behavior for the probe in the ladder-type atomic system with two-photon constructive interference will be changed from anomalous in cold atoms to normal in hot atoms, and the three-peak absorptive profile is shifted to a broadened spectrum with a shallow dip at the line center; as a comparison, there is always normal dispersion at the line center for the invert-Y-type atomic system with two-photon destructive interference, but the EIT window in the absorptive profile will be narrowed to subnatural linewidth (0.01Γ) at room temperature. The physics of those two different behaviors are discussed and compared in the dressed-state theory.