Differential cross sections and analyzing powers for pd elastic scattering below 1.0 MeV

Differential cross sections for the elastic pd scattering were measured at seven energies between 0.4 and 1.0 MeV for scattering angles from θ_c.m. = 44.5° to 149.2°. A mixture of D₂ and Kr was used as target gas and the pd differential cross sections were determined relative to those of pKr scattering with a statistical error of $\text{Δσ}\text{σ}$ ～5 × 10^?3. Analyzing powers for $\text{p}$d scattering were measured at 0.8, 0.9 and 1.0 MeV with a statistical error of ΔA_y ～5 × 10^?4.     

Amorphous GaP produced by ion implantation

Two types of non-crystalline states (“disordered” and “amorphous”) of GaP were produced by using ion implantation and post annealing. A structural-phase-transition-like annealing behaviour from the “disordered” state to the “amorphous” state was observed.The ion dose dependence and the annealing behaviour of the atomic structure of GaP implanted with 200 keV ? N⁺ ions were studied by using electron diffraction, backscattering and volume change measurements. The electronic structure was also investigated by measuring optical absorption and electrical conductivity.The implanted layer gradually loses the crystalline order with the increase of the nitrogen dose.The optical absorption coefficient α and electric conductivity σ of GaP crystals implanted with 200 keV?N⁺ ions of 1 × 10¹⁶ cm^?2 were expressed as αhν = C(hν ? E₀)ⁿ and log $\text{σ = A ? BT}{}^{\mathrm{<mtext>-</mtext><mtext>1</mtext><mtext>4</mtext>}}$, respectively. Moreover, the volume of the implanted layer increased about three percent and the electron diffraction pattern was diffused halo whose intensity monotonically decreases along the radial direction. These results indicate that the as-implanted layer has neither a long range order nor a short range order (“disordered state”).In the sample implanted at 1 × 10¹⁶ cm^?2, a structural phase-transition-like annealing stage was observed at around 400°C. That is, the optical absorption coefficient α abruptly fell off from 6 × 10⁴ to 7 × 10³ cm^?1 and the volume of the implanted layer decreased about 2% within an increase of less than 10 degrees in the anneal temperature. Moreover, the short range order of the lattice structure appeared in the electron diffraction pattern. According to the backscattering experiment, the heavily implanted GaP was still in the non-crystalline state even after annealing.These facts lead us to believe that heavily implanted GaP, followed by annealing at around 400°C, is in the “amorphous” state, although as-implanted Gap is not in the “amorphous” state but in the “disordered” state.     

Thermal conductivity and heat capacity of cyclohexane under pressure

The transient hot-wire technique was used to determine the thermal conductivity, λ, and the specific heat capacity per unit volume, pc_p, of cyclohexane up to 1.5 GPa in the range 120–340 K. The measurements were carried out in a piston-cylinder apparatus, 45 mm in internal diameter, cooled by liquid nitrogen. There is only a small (6%) increase in λ on freezing, while there is an increase by a factor of two corresponding to the plastic→ normal crystal transition. The variation of λ with temperature (T) at P = 0.03 GPa is $\text{d(lnλ)}\text{dT}\text{= ?2.2×10}{}^{\mathrm{?3}}\text{K}{}^{\mathrm{?1}}$ for the liquid and $\text{d(ln λ)}\text{dT}\text{= ?0.9× 10}{}^{\mathrm{?3}}\text{K}{}^{\mathrm{?1}}$ for the plastic crystalline phase. In the norm crystal phase an approximate T^?1 dependence is observed. Within each of the phases λ increases linearly with pressure, and the slope of λ (P) is smallest in the plastic crystal phase. The existence of a recently reported new high pressure phase is evident from conductivity data. Qualitative ρC_p -results are reported.     

Effect of hydrostatic pressure on the magnetocrystalline anisotropy constant K1 of iron and nickel

Previous values of the pressure dependence of the magnetocrystalline anisotropy constant K₁ of iron and nickel were revised. These values of K₁^?1 ($\text{dK}{}_1\text{dp}$) depend on the magnetic field for iron, and do not for nickel. The value in iron extrapolated to infinitely strong magnetic field is ?7.8×10^?6 bar^?1 at room temperature and ?7.3×10^?6 bar^?1 at 77K, and in nickel at 15 KOe is ?7.5×10^?6 bar^?1 at room temperature and ?2.8×10^?6 bar^?1 at 77K.     

Crystal field parameters and phase transitions in ErSb

The crystal field levels of the Er ($\text{J =}\text{15}\text{2}$) ion in a single crystal of ErSb have been measured by inelastic neutron scattering. The crystal field parameters obtained by a least squares fit to the spectra at several temperatures are: B₄ = (0·473 ± 0·005) × 10^?2°K and B₆ = (0·59 ± 0·06) × 10^?5°K, which differ considerably from the values o by interpolation from measurements on other compounds. In addition the temperature dependence of the magnetic scattering in the vicinity of the Néel temperature (T_N = 3·55°K) clearly demonstrates that the transition is second order in contrast to the first order behavior suggested by specific heat measurements. Also, any lattice distortion accompanying the magnetic ordering is less than 0.1 per cent, the resolution of the present experiment.     

Effect of the deviation from stoichiometry on cation self-diffusion and isotope effect in wüstite,Fe1−xO

Diffusion of ⁵⁹Fe in Fe_1xO crystals has been measured by a serial-sectioning technique as a function of temperature and deviation from stoichiometry. The results indicate that the diffusivity increases slightly at 1200°C, decreases at 802°C with an increase in x, and is insensitive to change in x at 1003°C. The temperature dependence of the cation diffusivity in Fe_0.94O is given by the expression, $\text{D=(0.6±0.5)×10}{}^{\mathrm{?3}}\text{exp(?29350 ±}\text{300}\text{RT}\text{)cm}{}^2\text{/se}$ the temperature range 700–1340°C. The isotope effect for cation self-diffusion was measured by simultaneous diffusion of ⁵²Fe and ⁵⁹Fe in Fe_1?xO at various temperatures and values of x. Although the measured values of fΔK are independent of temperature within the limits of experimental error, they decrease with an increase in the deviation from stoichiometry. The experimental results appeared to be consistent with the diffusion of Fe ions via “free mobile vacancies” that coexist with defect clusters. As a consequence of a “site-blocking” effect, the mobility of “free mobile vacancies” and the apparent correlation factor for cation tracer diffusion decrease with an increase in deviation from stoichiometry.     

Baroemf in the metal—superionic-metal system: AgAg4RbJ5Ag

It is shown that the application of pressure to one of the electrodes of the AgAg₄RbJ₅Ag system causes a flow of Ag⁺ ions into a region of lower pressure, thus giving rise to baroemf. The value of the baroelectric coefficient is determined by the volume-to-charge ratio of “metallic” ion: $\text{α =}\text{v}{}_0\text{e}\text{= (8?9) × 10}{}^{\mathrm{?11}}\text{V Pa}{}^{\mathrm{?1}}$, which agrees quite well with the measured values of (7–9) × 10^?11 V Pa^?1. Freshly prepared samples exhibit a non-equilibrium enhancement of baroemf, so that α differs somewhat from the above value.     

The elastic behaviour of the ternary zincblende structure semiconductor CuGe2P3

A single crystal has been grown of CuGe₂P₃, a ternary semiconductor with a zincblende structure in which the copper and germanium atoms are randomly distributed on the cation sites. The second order elastic constants measured by the ultrasonic pulse echo overlap technique (C₁₁ = 13.66, C₁₂ = 6.17, C₄₄ = 6.66 and bulk modulus B = 8.67 in units of 10¹⁰Nm^?2 at 291 K) are closely similar to those of GaP and conform well to Keyes' correlation for zincblende structure crystals. The hydrostatic pressure derivatives of the second order elastic constants ($\text{?C}{}_{11}\text{?P}\text{= 4.40}$, $\text{?C}{}_{12}\text{?P}\text{= 3.9}$, $\text{?C}{}_{44}\text{?P}\text{= 0.93}$ and $\text{?B}\text{?P}\text{= 4.07}$) and the third order elastic constants (C₁₁₁ = ? 8.45, C₁₁₂ = ? 3.49, C₁₂₃ = ? 1.13, C₁₄₄ = ? 2.82, C₁₅₅ = ? 1.44 and C₄₅₆ = ? 0.69 in units of 10¹¹Nm^?2) also resemble those of GaP: even the anharmonicity of the long wavelength acoustic modes of this ternary semiconductor resembles that of its binary “parent” compound. The positive signs of the hydrostatic pressure derivatives and the negative signs of the third order elastic constants show that the acoustic modes at the long wavelength limit stiffen under pressure, an effect which is quantified here by computation of the mode Grüneisen parameters, which are all positive. The harmonic and anharmonic force constants, obtained in the valence force field model, fit well into the pattern shown by related zincblende structure compounds: the ratio ($\text{β}\text{α}$) for bond bending (β) to stretching (α) force constants is greater than 4:1; the dominating anharmonic force constant is γ: most of the anharmonicity is associated with nearest neighbour atoms. Analysis of the temperature dependence of the elastic constants on the basis of a simple anharmonic model again emphasises the similarity between the elastic behaviour of CuGe₂P₃ and GaP. The thermal expansion of CuGe₂P₃ varies almost linearly with temperature between 291 K and 1000 K, the linear coefficient of thermal expansion α being 8.21 ± 0.02 × 10^?6 °C^?1. The similar lattice parameters and elastic behaviour of CuGe₂P₃ and GaP indicate that semiconducting devices made of epitaxial deposits of CuGe₂P₃ on a GaP substrate should prove to be almost strain-free.     

Observation of a meson X→2γ, with mass 2.85 GeV/c2, produced in the charge-exchange reaction π−p → Xn at 40 GeV/c

The invariant mass spectrum of neutral final states produced in π^?p charge-exchange scattering at 40 GeV/c has been studied, searching for heavy particles decaying in 2γ. A peak is observed around 2.85 GeV/c². The cross section of the reaction π^?p→X(2.85)+n, times the branching ratio of the X→2γ decay, is measured to be $\text{σ ×}\text{BR}\text{? 2 × 10}{}^{\mathrm{?34}}\text{cm}{}^2$.     

Pressure dependence of the thermal conductivity of aluminium

The thermal diffusivity, a, of aluminium has been measured at pressures up to 2.5 GPa at room temperature, and from these results the pressure dependence of the thermal conductivity, λ, has been calculated. Both quantities increase with pressure. The increase in a amounts to 4.6% to 1 GPa and 10.4% to 2.5 GPa. The initial pressure coefficient of the electronic thermal conductivity λ_e is found to be [λ_e]^-1?λ_e/?P = 3.7 × 10^-2GPa^-1, which agrees very well with a recent theoretical calculation.     

Electrical conductivity and defect structure of Ni-doped and “CO-reduced” Ni-doped SrTiO3 single crystals

The electrical conductivities of Ni-doped and “CO-reduced” Ni-doped SrTiO₃ single crystals were measured at temperatures 700–1200°C and P_o2's of 10^?7–10^?1 atm. Plots of log σ vs $\text{1}\text{T}$ at constant P_o2's were found to be linear, and the activation energies appeared to be 0.92 eV for Ni-doped SrTiO₃ and 0.50 eV for “CO-reduced” Ni-doped SrTiO₃ single crystals, respectively. Plots of log σ vs log P_o2 at constant temperature were found to be linear with an average slope of ?$\text{1}\text{4}$ for SrTiO₃:Ni and of ?$\text{1}\text{6}$ for “CO-reduced” SrTiO₃:Ni single crystals, respectively. The electrical conductivity dependencies on P_o2 indicate that a triply ionized titanium interstitial and an oxygen vacancy model are applicable to Nidoped and “CO-reduced” Ni-doped SrTiO₃ single crystals, respectively. The small polaron conduction was suggested on “CO-reduced” Ni-doped SrTiO₃ single crystal from the temperature dependence of conductivity.     

New evaluation of muon (g − 2) hadronic anomaly

The hadronic part a_H of the muon g-factor anomaly $\text{a ≡}\text{(g ? 2)}\text{2}$ is evaluated from latest data on σ(e⁺e^? → hadrons). For a p-wave ππ scattering length of a₁ = 0.04±0.005 we calculate a_H = (66±10) × 10^?9, compared to a(experiment) ? a(QED) = (60±29) × 10^?9. Half of the uncertainty on a_H is associated with the energy interval $\text{0.92 <}\text{s}\text{< 2}\text{GeV}$.     

Optical mode softening in the incommensurate phase of Sr2Nb2O7

In the incommensurate phase below about 220°C of Sr₂Nb₂O₇, the soft mode, of which frequency decreases toward 215°C has been found by the Raman scattering measurements in the $\text{b(cc)}\text{b}$ scattering geometry. The level repulsion and the intensity transfer between the soft mode and another low frequency mode are clearly observed. The uncoupled soft mode frequency ω_s has been found to be expressed as ω_s =A(T_tr?T)^β, where β= 0.38 ± 0.02. Pressure dependence of the soft mode has also been measured up to 24kbar. No remarkable pressure dependence has been observed.     

A numerical estimate of deviations from the exponential decay law for the transition 2P12→1S12 in hydrogen

The deviations from the exponential decay law of the $\text{2}\text{P}{}_{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$ states of the Dirac hydrogen atom with respect to the transition $\text{2}\text{P}{}_{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}\text{→1}\text{S}{}_{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$ are numerically estimated. We find |a₀(t) ? exp(?λt)|?2.5 × 10^?4 for all t, where a₀(t) is the “exact” decay amplitude and λ is a complex constant such that (2Re λ)^?1 is the “natural lifetime” of the $\text{2}\text{P}{}_{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$ states with respect to the spontaneous transition to $\text{1}\text{S}{}_{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$.     

Magnetic behaviour of single crystal anhydrous cupric chloride in the low temperature ordered phase

A “spin-flop” transition has been observed in anhydrous cupric chloride. The antiferromagnetic exchange field, H_e, is of the order of 10⁶ Oe so that only the spin-flop field can be measured: this gives H_sf = 4.1 × 10⁴ Oe. The ratio of the anisotropy field, H_a, which also acts in the crystal, to H_e is estimated as $\text{H}{}_{\mathrm{<mtext>a</mtext>}}\text{H}{}_{\mathrm{<mtext>e</mtext>}}\text{～ 8.4 × 10}{}^{\mathrm{?4}}$.     

Hole mobility in p-type HgTe

Experimental data concerning the electrical conduction and Hall coefficient in HgTe samples with acceptor states have been collected and analysed. In the analysis three ranges of acceptor concentration have been distinguished: a low concentration range up to about 5 × 10¹⁵ cm^?3 (pure samples), a high concentration range from 10¹⁶ to 10¹⁸ cm^?3 (p-like samples), and an extremely high concentration range above 10¹⁸ cm^?3 (p-type samples). In pure HgTe samples the holes are in the valence band, in p-like samples the “holes” are in the impurity band, and in p-type HgTe samples the holes are in a strong mixing impurity-valence band. The mobility of holes in the valence band is of the order of $\text{10}{}^5\text{cm}{}^2\text{Vs}$. The mobility of “holes” in the impurity band decreases with increasing impurity concentration from about $\text{5 × 10}{}^3\text{cm}{}^2\text{Vs}$ to $\text{125}\text{cm}{}^2\text{Vs}$. The mobility of holes in p-type HgTe samples is independent of the acceptor concentration and is equal to $\text{125}\text{cm}{}^2\text{Vs}$.     

Temporal evolution of exciton resonant secondary emission spectrum

The exciton secondary emission spectrum of CdS crystals has been studied at 2 K under $\text{λ =}\text{4765}\text{A}\text{?}\text{Ar}{}^{\mathrm{+}}$ laser excitation in the samples with different exciton lifetime. In these conditions three distinct components of secondary emission — Raman scattering, hot and equilibrium luminescence were spectrally resolved. It has been shown that the exciton lifetime acts like a very fast optical shutter and permits one to observe in stationary conditions the temporal evolution of the exciton secondary emission spectrum. The energy relaxation of excitons is accompanied by its “phase” relaxation, the measure of the latter being the polarization degree of emission. With the aid of the Hanle effect the acoustic phonon relaxation time 3.5 × 10^-12 sec has been estimated. The exciton lifetime has been found to vary from 3 × 10^-12 to 1.6 × 10^-9 sec in the samples studied.     

Microwave spectrum of 2-propene-1-imine,CH2CHCHNH

The reactive species, 2-propene-1-imine, has been identified by its microwave spectrum as a pyrolysis product of diallylamine vapor (100 mTorr, 400°C). Two entirely planar forms are observed, both with an “s-trans” CCCN configuration. The lower energy rotamer has an “anti” CCNH configuration, with $\text{r}\text{CC = 1.453(3)}\text{A}\text{?}$, $\text{r}\text{CC = 1.336(4)}\text{A}\text{?}$, and ∠ CCC = 122.9(3)° and a dipole moment of 2.01(2) D with 1.13(1) D and 1.66(2) D “a” and “b” components. The higher energy rotamer has a “syn” CCNH configuration and a dipole moment of 2.51(2) D with 2.39(2) and 0.77(3) D the “a” and “b” components. From relative intensity measurements, the ground state energy difference is determined to be 0.9 ± 0.1 kcal mole^?1.     

Chemical diffusion in CoO

Equilibration kinetics of CoO have been studied over the range 1–10^?5 atm oxygen pressure and 900–1300°C by both thermogravimetric and electrical conductivity techniques. The former technique gives excellent agreement with theory based on bulk diffusion and results in a chemical diffusion coefficient given by, $\text{D}\text{?}\text{= 4.8×10}{}^{\mathrm{?3}}\text{exp (?22,500/RT)}$ cm${}^2\text{sec}$. The defect diffusion coefficient (Dinvinco) is equal to $\text{i}\text{?}\text{tD}\text{2}$. No dependence of ?tD on defect concentration was observed. The electrical conductivity technique qualitatively supports these results.