光子石墨烯中赝磁场作用下的谷霍尔效应

将石墨烯中赝磁场的产生机理运用于光子石墨烯,通过在光子石墨烯中引入晶格有规律单轴形变的方式,理论分析得到了谷依赖的均匀赝磁场,并通过数值模拟的方法观察到明显的谷霍尔效应.这种谷霍尔效应的显著程度随晶格形变度的增加而加强.在具有一定损耗的电介质材料构成的形变光子石墨烯中仍可观察到明显的谷霍尔效应.随着电介质材料损耗的增加,谷霍尔效应导致的波束转弯效果依然能够保持,只是强度逐渐变弱.类似于自旋电子学中的自旋霍尔效应,这种光子石墨烯中等效赝磁场作用下的谷霍尔效应在未来谷极化器件的设计和应用中具有重要意义.     

变温霍尔效应中副效应的研究

用P型锑化铟样品研究了变温霍尔效应中的副效应随温度的变化,发现副效应随温度非单调变化,并探讨了这一变化的原因,发现载流子迁移率随温度的变化直接影响各种副效应对温度的依赖关系.     

铁磁石墨烯体系的CT不变量子自旋霍尔效应

文章作者在垂直磁场作用下的铁磁石墨烯体系里预言了一种新类型的量子自旋霍尔效应.这量子自旋霍尔效应与自旋轨道耦合无关,体系也不具有时间反演不变性;但是有CT不变（C为电子-空穴变换、T为时间反演变换）.由于量子自旋霍尔效应,体系的纵向电阻和自旋霍尔阻出现量子化平台.特别是,自旋霍尔阻的量子化平台有很强的抗杂质干扰能力.     

异常霍尔效应和自旋霍尔效应

异常霍尔效应和自旋霍尔效应是在常规霍尔效应的基础上引发出的2种新现象.本文介绍了这2种现象及其原理和潜在的应用.     

Spin and charge Nernst effect in a four-terminal double-dot interferometer

We investigate the spin and charge Nernst effect of a four-terminal Aharonov–Bohm interferometer with Rashba spin–orbit interaction (RSOI). It is shown that a pure spin Nernst effect or a fully spin-polarized Nernst effect can be obtained by modulating the magnetic flux phase ? and the RSOI induced phase φ. It is also demonstrated that some windows of ? (or φ) for maintaining an almost fully spin-polarized Nernst effect exist and their width is under the control of the other phase. Moreover, for the charge Nernst coefficient $N_c$ and spin Nernst coefficient $N_s$ the relationship $N_c(?,\phi )=?N_s(\phi ,?)$ always holds. These results suggest that our proposal may act as a controllable thermospin generator.     

The enigma of the quantum Hall effect in graphene

We apply Laughlin’s gauge argument to analyze the ν=0 quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the zero temperature thermodynamic limit. We further predict that in a Corbino geometry measurement, where edge transport and other mesoscopic effects are unimportant, one should find the longitudinal conductivity vanishing in all graphene samples which have an underlying ν=0 quantized Hall effect. We argue that this ν=0 graphene quantum Hall state is qualitatively similar to the high field insulating phase (also known as the Hall insulator) in the lowest Landau level of ordinary semiconductor two-dimensional electron systems. We establish the necessity of having a high magnetic field and high mobility samples for the observation of the divergent resistivity as arising from the existence of disorder-induced density inhomogeneity at the graphene Dirac point.     

Theory of the integer quantum Hall effect in graphene

A Hall resistivity formula for the 2DES in graphene is derived from the zero-mass Dirac field model adopting the electron reservoir hypothesis. The formula reproduces perfectly the experimental resistivity data [K.S. Novoselov, et al., Nature 438 (2005) 201]. This perfect agreement cannot be achieved by any other existing models. The electron reservoir is shown to be the 2DES itself.     

量子霍尔效应

从经典的霍尔效应开始,比较系统地、深入浅出地介绍了量子霍尔效应及其所涉及的一些新概念和实际应用。     

Integer quantum Hall effect in Kekulé-patterned graphene

Y-shaped Kekulébond textures in a honeycomb lattice on a graphene-copper superlattice have recently been experimentally revealed.In this paper,the effects of such a bond modulation on the transport coefficients of Kekulé-patterned graphene are investigated in the presence of a perpendicular magnetic field.Analytical expressions are derived for the Hall and longitudinal conductivities using the Kubo formula.It is found that the Y-shaped Kekulébond texture lifts the valley degeneracy of all Landau levels except that of the zero mode,leading to additional plateaus in the Hall conductivity accompanied by a split of the corresponding peaks in the longitudinal conductivity.Consequently,the Hall conductivity is quantized as±ne²/h for n=2,4,6,8,10,...,excluding some plateaus that disappear due to the complete overlap of the Landau levels of different cones.These results also suggest that DC Hall conductivity measurements will allow us to determine the Kekulébond texture amplitude.     

多端口石墨烯系统中的非局域电阻

非局域测量方法由于其能够间接探测某些难以直接俘获的非平庸物理机理,近年来已逐渐成为凝聚态物理的研究热点之一.最近的实验在H形多端口石墨烯样品中发现了巨大的非局域电阻信号.在排除了经典欧姆、边缘态等可能的输运形式后,人们倾向于认为这类非局域电阻是由多端石墨烯系统中存在的自旋霍尔效益或谷霍尔效应所导致.借助于非平衡格林函数输运计算,目前的理论可以在同样的多端石墨烯体系中得到部分与实验符合较好的数值模拟结果.针对实验中发现的某些难以理解的、甚至与经典理论相矛盾的非局域电阻性质,例如非局域电阻相比局域电阻在偏离电中性点时的迅速衰减、出现在能隙中的非局域电阻峰值等,目前的理论研究取得了一定的进展,但对这些奇异现象的理解仍存在较大的争议.本综述详细回顾了多端口石墨烯体系中非局域电阻的相关实验,并针对性地介绍与之配套的理论进展及对未来研究的展望.     

Detection of hidden localized states by the quantum Hall effect in graphene

We fabricated a monolayer graphene transistor device in the shape of the Hall-bar structure, which produced an exactly symmetric signal following the sample geometry. During electrical characterization, the device showed the standard integer quantum Hall effect of monolayer graphene except for a broader range of several quantum Hall plateaus corresponding to small filling factors in the electron region. We investigated this anomaly on the basis of localized states owing to the presence of possible electron traps, whose energy levels were estimated to be near the Dirac point. In particular, the inequality between the filling of electrons and holes was ascribed to the requirement of excess electrons to fill the trap levels. The relations between the quantum Hall plateau, Landau level, and filling factor were carefully analyzed to reveal the details of the localized states in this graphene device.     

Gauge potential formulations of the spin Hall effect in graphene

Two different gauge potential methods are engaged to calculate explicitly the spin Hall conductivity in graphene. The graphene Hamiltonian with spin-orbit interaction is expressed in terms of kinematic momenta by introducing a gauge potential. A formulation of the spin Hall conductivity is established by requiring that the time evolution of this kinematic momentum vector vanishes. We then calculated the conductivity employing the Berry gauge fields. We show that both of the gauge fields can be deduced from the pure gauge field arising from the Foldy-Wouthuysen transformations.     

Transverse electric field-induced quantum valley Hall effects in zigzag-edge graphene nanoribbons

We have investigated gapless edge states in zigzag-edge graphene nanoribbons under a transverse electric field across the opposite edges by using a tight-binding model and the density functional theory calculations. The tight-binding model predicted that a quantum valley Hall effect occurs at the vacuum-nanoribbon interface under a transverse electric field and, in the presence of edge potentials with opposite signs on opposite edges, an additional quantum valley Hall effect occurs under a much lower field. Dangling bonds inevitable at the edges of real nanoribbons, functional groups terminating the edge dangling bonds, and spin polarizations at the edges result in the edge potentials. The density functional theory calculations confirmed that asymmetric edge terminations, such as one having hydrogen at an edge and fluorine at the other edge, lead to the quantum valley Hall effect even in the absence of a transverse electric field. The electric field-induced half-metallicity in the antiferromagnetic phase, which has been intensively investigated in the last decade, was revealed to originate from a half-metallic quantum valley Hall effect.     

四端双量子点系统中的自旋和电荷能斯特效应

基于非平衡态格林函数方法,理论研究了与四个电极耦合的双量子点系统中的自旋和电荷能斯特效应,考虑了不同电极的磁动量结构和量子点内以及量子点间电子的库仑相互作用对热电效应的影响.结果表明铁磁端口中的磁化方向能够有效地调节能斯特效应:当电极1和电极3中的磁化方向反平行排列时,通过施加横向的温度梯度,系统中将会出现纯的自旋能斯特效应;当电极4从普通金属端口转变为铁磁金属端口时,将同时观测到电荷和自旋能斯特效应.研究发现,能斯特效应对于铁磁电极极化强度的依赖程度较弱,但对库仑排斥作用十分敏感.在量子点内和点间库仑排斥作用的影响下,自旋及电荷能斯特系数有望提高两个数量级.     

Tunable anisotropic anomalous Nernst effect and orbital magnetization in Floquet Weyl semimetals

Weyl semimetals and nodal line semimetals display a host of novel properties. Floquet Weyl semimetals with tunable Weyl points can be obtained from nodal line semimetals under the circularly polarized off-resonant light. Here we theoretically investigate the anomalous Nernst effect and orbital magnetization in Floquet Weyl semimetals. Due to the anisotropy of the band structure in Floquet Weyl semimetals, highly anisotropic Berry phase mediated anomalous Nernst effect and orbital magnetization in the absence of magnetic field are observed, indicating orientation-dependent applications in the design of nanodevices. The amplitude and sign of anomalous Nernst coefficient and orbital magnetization can be tuned by the light direction, amplitude and polarization. The effect of the chemical potential on anomalous Nernst coefficient and orbital magnetization is also discussed. The light-modulated anomalous Nernst effect and orbital magnetization make Floquet Weyl semimetals potential candidates for thermoelectric devices.     

r2RuO4的电子相干态: Nernst效应研究

文章首次报道了自旋三重态奇异配对超导体Sr2RuO4的Nernst效应在正常态呈现出的反常行为.在T<100K时,较大的负的Nernst信号出现,其绝对值随温度降低而增大,并在T* ≈ 20—25K时出现一个负的最大值,之后随温度线性减小.这样大的Nernst信号是与正常态的多带性质相关,而非线性的磁场关系则可能与其中的磁涨落相关.文章作者提出在T*温度以下,在电子型的γ带上出现了能带关联的相干态,准粒子的散射受到了抑制,使得在T*温度以下Nernst信号快速减弱.同时,热电势在T*附近出现了拐点,Hal     

自制霍尔效应演示仪

利用霍尔效应原理制作了霍尔效应演示仪,详细介绍了该演示仪的制作过程,定性地演示了霍尔电压与通电电流和磁感应强度的关系.     

Spin Hall Magnetoresistance and Spin Nernst Magnetothermopower in a Rashba System: Role of the Inverse Spin Galvanic Effect

In ferromagnet/normal‐metal bilayers, the sensitivity of the spin Hall magnetoresistance and the spin Nernst magnetothermopower to the boundary conditions at the interface is of central importance. In general, such boundary conditions can be substantially affected by current‐induced spin polarizations. In order to quantify the role of the latter, we consider a Rashba two‐dimensional electron gas with a ferromagnet attached to one side of the system. The geometry of such a system maximizes the effect of current‐induced spin polarization on the boundary conditions, and the spin Hall magnetoresistance is shown to acquire a non‐trivial and asymmetric dependence on the magnetization direction of the ferromagnet.     

Nernst effect in Tl-Ba-Ca-Cu-O superconducting films due to infrared laser heating

A Nernst effect has been observed in a high temperature superconductor for the first time. Irradiating superconducting Tl–Ba–Ca–Cu–O thin films by short pulses of a TEA-CO₂ laser, a photovoltaic signal is detected perpendicular to a magnetic field applied parallel to the film surface. The signal is attributed to magnetic flux line depinning and flux line transport driven by the laser induced temperature gradient. The results are described by thermal flux line activation leading to a calculated distribution of pinning energies from 100 K to 4000 K.