Density of states of disordered two-dimensional crystals with half-filled band

A diagrammatic method is applied to study the effects of commensurability in two-dimensional disordered crystalline metals by using the particle-hole symmetry with respect to the nesting vector P0 = +/-pi / a,pi / a for a half-filled electronic band. The density of electronic states (DoS) is shown to have nontrivial quantum corrections due to both nesting and elastic impurity scattering processes, and as a result the Van Hove singularity is preserved in the center of the band. However, the energy dependence of the DoS is significantly changed. A small offset from the middle of the band gives rise to the disappearance of quantum corrections to the DoS.     

Insulator-semimetallic transition in quasi-1D charged impurity-infected armchair boron-nitride nanoribbons

We address control of electronic phase transition in charged impurity-infected armchair-edged boron-nitride nanoribbons (ABNNRs) with the local variation of Fermi energy. In particular, the density of states of disordered ribbons produces the main features in the context of pretty simple tight-binding model and Green's functions approach. To this end, the Born approximation has been implemented to find the effect of π-band electron-impurity interactions. A modulation of the π-band depending on the impurity concentrations and scattering potentials leads to the phase transition from insulator to semimetallic. We present here a detailed physical meaning of this transition by studying the treatment of massive Dirac fermions. From our findings, it is found that the ribbon width plays a crucial role in determining the electronic phase of disordered ABNNRs. The obtained results in controllable gap engineering are useful for future experiments. Also, the observations in this study have also fueled interest in the electronic properties of other 2D materials.     

Ab initio calculations study of the electronic, optical and thermodynamic properties of NaMgH3, for hydrogen storage

The structural stability, electronic structure, optical and thermodynamic properties of NaMgH₃ have been investigated using the density functional theory. Good agreement is obtained for the bulk crystal structure using both the local density approximation (LDA) and the generalized gradient approximation (GGA) for the exchange-correlation energy. It is found from the electronic density of states (DOS) that the valence band is dominated by the hydrogen atoms while the conduction band is dominated by Na and Mg empty states. Also, the DOS reveals that NaMgH₃ is a large gap insulator with direct band gap 3.4 eV. We have investigated the optical response of NaMgH₃ in partial band to band contributions and the theoretical optical spectrum is presented and discussed in this study. Optical response calculation suggests that the imaginary part of dielectric function spectra is assigned to be the interband transition. The formation energy for NaMgH₃ is investigated along different reaction pathways. We compare and discuss our result with the measured and calculated enthalpies of formation found in the literature.     

Impurities in a biased graphene bilayer

We study the problem of impurities and midgap states in a biased graphene bilayer. We show that the properties of the bound states, such as localization lengths and binding energies, can be controlled externally by an electric field effect. Moreover, the band gap is renormalized and impurity bands are created at finite impurity concentrations. Using the coherent potential approximation, we calculate the electronic density of states and its dependence on the applied bias voltage.     

CPA density of states and conductivity in a double-exchange system containing impurities

We study density of states and conductivity of the doped double-exchange system, treating interaction of charge carriers both with the localized spins and with the impurities in the coherent potential approximation. It is shown that under appropriate conditions there is a gap between the conduction band and the impurity band in paramagnetic phase, while the density of states is gapless in ferromagnetic phase. This can explain metal-insulator transition frequently observed in manganites and magnetic semiconductors. Activated conductivity in the insulator phase is numerically calculated. Received 13 June 2000 and Received in final form 5 January 2001     

掺杂MgCNi3超导电性和磁性的第一性原理研究

从第一性原理出发，计算了MgCNi₃的电子能带结构.MgCNi₃中C 2p与Ni 3d轨道杂化使穿梭费米面上的Ni 3d能带表现出平面性，费米面落在态密度范霍夫奇异(vHs)峰的右坡上.vHs峰上大的电子态密度和铁磁相变点附近的自旋涨落是决定MgCNi₃超导电性的重要因素.研究了三种替代式掺杂对其超导电性和磁性的影响，发现电子掺杂使费米能级下滑到态密度较低的位置，导致体系转变为无超导电性的顺磁相；同构等价电子数的金属间化合物的轨道杂化，引起费米面上态密度的减少，降低了超导电性；而空穴掺杂使费米面向vHs峰值方向移动，虽然费米面上电子态密度增大可能提高超导电性，但增强了的Ni原子磁交换作用产生铁磁序，破坏了超导电性. 关键词： 电子结构 超导电性 磁性 掺杂     

First principles study of the electronic and optical properties of SbTaO4

The electronic density of states (DOS), band structure and optical properties of orthorhombic SbTaO₄ are studied by first principles full potential-linearized augmented plane wave (FP-LAPW) method. The calculation is done in the framework of density functional theory with the exchange and correlation effects treated using generalized gradient approximation (GGA). We find an indirect band gap of 1.9 eV at the R→Γ symmetry direction of the Brillouin zone in SbTaO₄. It is observed that there is a strong hybridization between Ta-5d and O-2p electronic states which is responsible for the electronic properties of the system. Using the projected DOS and band structure we have analyzed the interband contribution to the optical properties of SbTaO₄. The real and imaginary parts of the dielectric function of SbTaO₄ are calculated, which correspond to electronic transitions from the valence band to the conduction band. The band gap obtained is in close agreement with the experimental data.     

First-principles studies on the structural and electronic properties of Li-ion battery cathode material CuF2

The 3d transition metal binary compounds have been extensively investigated for a large multi-electron redox capacity through reversible electrochemical reactions. Here, the structural, electronic and magnetic properties of CuF₂ are studied by the first-principles calculations within both the generalized gradient approximation (GGA) and GGA+U frameworks. Our results show that the antiferromagnetic (AFM) configuration of CuF₂ is more stable than the ferromagnetic (FM) one, which is consistent with experiments. The analysis of the electronic density of states (DOS) shows that CuF₂ is a classic Mott–Hubbard insulator with a large d–d type band gap, which is similar to the case of FeF₃. Moreover, small spin polarizations were found on the sites of fluorin ions, which accords with a fluorin-mediated superexchange mechanism for the Cu–Cu magnetic interaction.     

第一性原理研究Fe掺杂SnO2材料的光电性质

采用基于第一性原理的线性缀加平面波(FP-LAPW)方法,研究Fe掺杂SnO₂材料电子结构和光学性质,包括电子态密度、能带结构、介电函数和其他一些光学图谱. 研究结果表明,掺Fe后材料均属于直接跃迁半导体,且呈现半金属性;随掺杂浓度增加,费米能级进入价带,带隙逐渐减小,Fe原子之间耦合作用增强;通过掺杂能够在一定程度上改变成键性质,使其具有金属键性质. 光学谱线(吸收谱、消光系数等)与介电函数虚部谱线相对应,均发生蓝移,各峰值与电子跃迁吸收有关,从理论上指出光学性质和电子结构的内在联系. 关键词： 能带结构 态密度 光学性质 介电函数     

Structural, electronic and vibrational properties of InN under high pressure

The structural, electronic and vibrational properties of InN under pressures up to 20 GPa have been investigated using the pseudo-potential plane wave method (PP-PW). The generalized-gradient approximation (GGA) in the frame of density functional theory (DFT) approach has been adopted. It is found that the transition from wurtzite (B4) to rocksalt (B1) phase occurs at a pressure of approximately 12.7 GPa. In addition, a change from a direct to an indirect band gap is observed. The mechanism of these changes is discussed. The phonon frequencies and densities of states (DOS) are derived using the linear response approach and density functional perturbation theory (DFPT). The properties of phonons are described by the harmonic approximation method. Our results show that phonons play an important role in the mechanism of phase transition and in the instability of B4 (wurtzite) just before the pressure of transition. At zero pressure our data agree well with recently reported experimental results.     

Properties of electrons near a Van Hove singularity

The Fermi surface of most hole-doped cuprates is close to a Van Hove singularity at the M point. A two-dimensional electronic system, whose Fermi surface is close to a Van Hove singularity, shows a variety of weak coupling instabilities. It is a convenient model to study the interplay between antiferromagnetism and anisotropic superconductivity. The renormalization group approach is reviewed with emphasis on the underlying physical processes. General properties of the phase diagram and possible deformations of the Fermi surface due to the Van Hove proximity are described.     

一维长程关联无序系统中的电子态

利用傅里叶滤波法在一维Anderson无序系统中产生了具有幂律谱密度公式s(q)∝q^-p形式的长程关联随机能量序列，并利用传输矩阵方法计算了系统中引入了长程关联后的局域长度，同时应用负本征值理论对系统中的电子态密度进行了分析，并分别把计算结果与系统中不具有长程关联时的局域长度与电子态密度进行了比较.结果表明，长程幂律关联的引入对电子态的性质产生了很大的影响，当关联指数p≥2.0时，在系统能带中心范围内发生了部分局域态向退局域态的转变，而同时电子态密度也发生了很大的变化，出现了六个范霍夫奇点，系统的能带范围也相应地得到展宽. 关键词： 无序系统 长程关联 局域长度 电子态密度     

High pressure phase transition and band structures of different phases in CeO2

We report a detailed theoretical calculation of the electronic band structure of CeO₂ in cubic and orthorhombic phases under pressure using a tight-binding linear muffin-tin orbital method (TB-LMTO) within local density approximation (LDA). The compressibility behavior of this compound was discussed in the light of the changes occurring in the electronic structure. Apart from the electronic band structure and structural stability calculations, the density of states (DOS) and Fermi energies (E_f) at various pressures are calculated. The calculated lattice parameter, transition pressure, bulk modulus and the pressure-volume relation are found out to be in good agreement with experimental results.     

Contribution electronique au gradient de champ electrique sur une impurete de transition dans un environnement metallique anisotrope

The experimental data related to the electric field gradient at transition impurities either in hexagonal metals, or in cubic metals where the isotropy is perturbed by a next impurity, can be explained neither by the lattice contribution nor by the electronic contribution from the conduction band. A model is proposed here to investigate the electronic contribution arising from virtual bound 3d states on the impurity, by studying the local crystal field influence in a Friedel-Anderson model. It appears that at the 0°K limit, the localized electronic contribution to the EFG can be linearly related to the density n_d(?_F) of 3d states at the Fermi level. As a first approximation, this law is valid even at temperature different from 0°K so establishing a linear correlation between the EFG, the impurity resistivity and the amplitude of the charge perturbation around the impurity.     

Combined effect of the perpendicular magnetic field and dilute charged impurity on the electronic phase of bilayer AA-stacked hydrogenated graphene

We address the electronic phase engineering in the impurity-infected functionalized bilayer graphene with hydrogen atoms (H-BLG) subjected to a uniform Zeeman magnetic field, employing the tight-binding model, the Green's function technique, and the Born approximation. In particular, the key point of the present work is focused on the electronic density of states (DOS) in the vicinity of the Fermi energy. By exploiting the perturbative picture, we figure out that how the interaction and/or competition between host electrons, guest electrons, and the magnetic field potential can lead to the phase transition in H-BLG. Furthermore, different configurations of hydrogenation, namely reduced table-like and reduced chair-like, are also considered when impurities are the same and/or different. A comprehensive information on the various configurations provides the semimetallic and gapless semiconducting behaviors for unfunctionalized bilayer graphene and H-BLGs, respectively. Further numerical calculations propose a semimetal-to-metal and gapless semiconductor-to-semimetal phase transition, respectively, when only turning on the magnetic field. Interestingly, the results indicate that the impurity doping alone affects the systems as well, leading to semimetal-to-metal and no phase transition in the pristine system and hydrogenated ones, respectively. However, the combined effect of charged impurity and magnetic field shows that the pristine bilayer graphene is not influenced much as the functionalized ones and phase back transitions appear. Tuning of the electronic phase of H-BLG by using both types of electronic and magnetic perturbations play a decisive role in optical responses.     

Study on the ground state of NiO: The LSDA (GGA)+U method

The ground-state properties of NiO have been investigated using the all-electron full-potential linearized augmented plane wave (FLAPW) and the so-called LSDA (GGA)+U (LSDA—local-spin-density approximation; GGA—generalized gradient approximation) method. The calculated result indicates that our estimation of U is in good agreement with experimental data. It is also found that none of the LSDA (GGA) methods is able to provide, at the same time, accurate electronic and structural properties of NiO. Although the GGA+U method can properly predict the electronic band gap, it overestimates the lattice constant and underestimates the bulk modulus. Then only the LSDA+U method accurately reports the electronic and structural properties of NiO. The calculated band gap and the density of states (DOS) show that the material NiO is the charge-transfer insulator, which agrees with the spectroscopy data. The comparison between the charge density of LSDA (not considering U) and that of LSDA+U (considering U) demonstrates that the trend of ionic crystal for NiO is obvious.     

The giant Stark effect in armchair-edge phosphorene nanoribbons under a transverse electric field

We study the variation of electronic properties for armchair-edge phosphorene nanoribbons (APNRs) modulated by a transverse electric field. Within the tight-binding model Hamiltonian, and by solving the differential Schrödinger equation, we find that a band gap closure appears at the critical field due to the giant Stark effect for an APNR. The gap closure has no field polarity, and the gap varies quadratically for small fields but becomes linear for larger ones. We attribute the giant Stark effect to the broken edge degeneracy, i.e., the charge redistributions of the conduction band minimum and valence band maximum states localized at opposite edges induced by the field. By combined with the Green's function approach, it is shown that in the presence of the critical field a gap of density of states (DOS) disappears and a high value DOS turns up at the energy position of the band gap closure. Finally, as the field increases, we find the band gap decreases more rapidly and the gap closure occurs at smaller fields for wider ribbons. Both the band gap and DOS variations with the field show an insulator-metal transition induced by a transverse electric field for the APNR. Our results show that wider APNRs are more appreciable to design field-effect transistors.     

Classification of unconventional electron-hole condensates

Heavy Fermion metals with their very anisotropic quasiparticle states may support unconventional electron-hole (Peierls) pairing in addition to unconventional two electron (Cooper) pairs in the superconducting phase. For two different nesting Fermi surface models the possible types of electron hole condensates are classified according to the symmetries of their order parameters. This is performed within a continuum representation for the electronic states near the van Hove saddle point singularities. The quasiparticle bands and the unitary transformation to Bloch states in the condensed phase are derived for the two Fermi surface models with one and two independent nesting vectors respectively. Emphasis is put on the investigation of electron-hole condensed phases with 2Q-modulated structure. It is shown that in the continuum approximation the gap equations are all equivalent and the critical field curve is calculated in the rigid band model.     

Electronic structure and optical properties of In-doped SrTiO3 by density function theory

The effect of In doping on the electronic structure and optical properties of SrTiO3 is investigated by the first-principles calculation of plane wave ultra-soft pseudo-potential based on the density function theory （DFT）. The calculated results reveal that due to the hole doping, the Fermi level shifts into valence bands （VBs） for SrTi1-x InxO3 with x = 0.125 and the system exhibits p-type degenerate semiconductor features. It is suggested according to the density of states （DOS） of SrTi0.875In0.125O3 that the band structure of p-type SrTIO3 can be described by a rigid band model. At the same time, the DOS shifts towards high energies and the optical band gap is broadened. The wide band gap, small transition probability and weak absorption due to the low partial density of states （PDOS） of impurity in the Fermi level result in the optical transparency of the film. The optical transmittance of In doped SrTiO3 is higher than 85% in a visible region, and the transmittance improves greatly. And the cut-off wavelength shifts into a blue-light region with the increase of In doping concentration.     

Magnetic fluctuations and itinerant ferromagnetism in two-dimensional systems with Van Hove singularities

A criterion for ferromagnetism in two-dimensional systems with the Fermi level near Van Hove singularities (VHSs) is analyzed. In the quasistatic approximation applied to a spin-fermion model, it is shown that the spectrum of spin excitations (paramagnons) is positively defined when the interaction I between the electronic and spin degrees of freedom is sufficiently large (I > I _c). The critical interaction I _c is much greater than its value determined from the Stoner criterion; hence, the latter criterion is not an adequate criterion for ferromagnetism in the presence of Van Hove singularities in the electronic spectrum. By combining the quasistatic approximation with the method of equations of motion, the electronic self-energy is obtained in the first order in the inverse number of spin components.