高分辨紫外电子轰击互补金属氧化物半导体器件的实验研究

基于真空紫外光电阴极和背照式互补金属氧化物半导体(CMOS)图像传感器研制了紫外光响应的电子轰击CMOS(EBCMOS)器件,实现了EBCMOS器件在40 mlx光照度环境下的高分辨探测,电子图像灰度随电子能量的变化呈现出极好的线性关系.对器件成像分辨率测试的结果表明,在电场强度为5000 V/mm时,器件的空间分辨率可以达到25 lp/mm,与国际相关报道水平相当.研制的EBCMOS器件可直接在紫外弱光探测领域应用,如天文观察、高能物理、遥感测绘等,同时也可为下一步研制可见光和近红外敏感的EBCMOS器件提供参考.     

The limits to magnetic recording — media considerations

At present longitudinal magnetic recording systems are the basis of all low cost high-density information storage systems. During the recent past the data density stored on rigid disk media which is the higher density format have increased at the rate of 60% per annum compound. However, very recently due to the introduction of new advanced GMR spin-valve heads this rate of advance has increased to 100% per annum in laboratory demonstrations. Hence, it is pertinent at this time to enquire as to where the fundamental physical limitations of longitudinal magnetic recording may lie. In this context there are two principle areas of interest: the first of these is limitations to data rate. These are concerned with the fundamental physics of the maximum rate at which a magnetic moment may reverse from one direction to the other. The theoretical calculation of these limits is complex and not well understood but the limits of our understanding will be reviewed in this paper. Secondly, and of principle concern is the limit to the density at which information can be stored in a magnetic thin film. This latter limitation is based around the signal to noise ratio and also the question of the stability of increasingly small written bits. Signal to noise considerations are extremely complex and derive from factors such as the shape of bits and cross-talk between neighbouring bits or even neighbouring tracks. In this article the fundamental origins of noise will be reviewed in terms of the basic physics that gives rise to variation in transition shapes. Cross-talk and cross-track interference will not be discussed as these are generally addressed through issues associated with the resolution of the servo-mechanism that positions the head above a track and is not associated with the fundamental physics of the medium itself. Thermal stability of a bit of information is of critical importance particularly as media is made ever thinner and will form a major aspect of the discussion in this work. Finally, possible material physics solutions to some of these limitations will be presented in terms of measurable parameters which to some limited degree may be controlled by process conditions.     

Single-molecule spectroscopy and microscopy

Advances in detector sensitivity and improvements in instrument design have recently provided scientists with tools to probe single molecules with light, and monitor their photophysical properties with exquisite sensitivity and spatial as well as temporal resolution. Spectroscopic and temporal information is used to explore molecular structure, conformational dynamics, local environment and intermolecular interactions of individual species. High-resolution single-molecule microscopy allows these methods to be used for in vitro or in vivo molecular colocalization with nanometer precision. The collected data have generated a wealth of new information in domains ranging from chemistry and biology to solid state physics. To cite this article: X. Michalet, S. Weiss, C. R. Physique 3 (2002) 619–644.     

Modeling cities

Cities are systems with a large number of constituents and agents interacting with each other and can be considered as emblematic of complex systems. Modeling these systems is a real challenge and triggered the interest of many disciplines such as quantitative geography, spatial economics, geomatics and urbanism, and more recently physics. (Statistical) Physics plays a major role by bringing tools and concepts able to bridge theory and empirical results, and we will illustrate this on some fundamental aspects of cities: the growth of their surface area and their population, their spatial organization, and the spatial distribution of activities. We will present state-of-the-art results and models but also open problems for which we still have a partial understanding and where physics approaches could be particularly helpful. We will end this short review with a discussion about the possibility of constructing a science of cities.     

惯性约束聚变黑腔内等离子体界面处的动理学效应及其影响

在惯性约束聚变物理研究中,等离子体界面处的动理学效应及其时空演化特性近年来受到重点关注,因为它会显著影响激光能量沉积、激光等离子体不稳定性、辐照对称性、黑腔和内爆性能等诸多物理。准确描绘等离子体特征界面附近的动理学效应是惯性约束聚变物理设计的基本需求,也是高能量密度物理中的具有挑战且未完全解决的问题。重点回顾近几年来本团队围绕等离子体动理学效应及其影响开展的一些研究工作:（1）聚变黑腔中金等离子体与靶丸冕区等离子体边缘处的电场结构及其加速的高能离子对内爆对称性的影响;（2）激光光路上高Z-低Z等离子体界面处的电场产生机制及其导致的反常离子扩散对激光等离子体不稳定性的影响;（3）等离子体中电磁场结构的质子照相反演。     

Ultrathin oxide films and interfaces for electronics and spintronics

Oxides have become a key ingredient for new concepts of electronic devices. To a large extent, this is due to the profusion of new physics and novel functionalities arising from ultrathin oxide films and at oxide interfaces. We present here a perspective on selected topics within this vast field and focus on two main issues. The first part of this review is dedicated to the use of ultrathin films of insulating oxides as barriers for tunnel junctions. In addition to dielectric non-magnetic epitaxial barriers, which can produce tunneling magnetoresistances in excess of a few hundred percent, we pay special attention to the possibility of exploiting the multifunctional character of some oxides in order to realize ‘active’ tunnel barriers. In these, the conductance across the barrier is not only controlled by the bias voltage and/or the electrodes magnetic state, but also depends on the barrier ferroic state. Some examples include spin-filtering effects using ferro- and ferrimagnetic oxides, and the possibility of realizing hysteretic, multi-state junctions using ferroelectric barriers. The second part of this review is devoted to novel states appearing at oxide interfaces. Often completely different from those of the corresponding bulk materials, they bring about novel functionalities to be exploited in spintronics and electronics architectures. We review the main mechanisms responsible for these new properties (such as magnetic coupling, charge transfer and proximity effects) and summarize some of the most paradigmatic phenomena. These include the formation of high-mobility two-dimensional electron gases at the interface between insulators, the emergence of superconductivity (or ferromagnetism) at the interface between non-superconducting (or non-ferromagnetic) materials, the observation of magnetoelectric effects at magnetic/ferroelectric interfaces or the effects of the interplay and competing interactions at all-oxide ferromagnetic/superconducting interfaces. Finally, we link up the two reviewed research fields and emphasize that the tunneling geometry is particularly suited to probe novel interface effects at oxide barrier/electrode interfaces. We close by giving some directions toward tunneling devices exploiting novel oxide interfacial phenomena.     

Aberration-corrected scanning transmission electron microscopy for complex transition metal oxides

Lattice,charge,orbital,and spin are the four fundamental degrees of freedom in condensed matter,of which the interactive coupling derives tremendous novel physical phenomena,such as high-temperature superconductivity(high-T_c SC) and colossal magnetoresistance(CMR) in strongly correlated electronic system.Direct experimental observation of these freedoms is essential to understanding the structure-property relationship and the physics behind it,and also indispensable for designing new materials and devices.Scanning transmission electron microscopy(STEM) integrating multiple techniques of structure imaging and spectrum analysis,is a comprehensive platform for providing structural,chemical and electronic information of materials with a high spatial resolution.Benefiting from the development of aberration correctors,STEM has taken a big breakthrough towards sub-angstrom resolution in last decade and always steps forward to improve the capability of material characterization;many improvements have been achieved in recent years,thereby giving an indepth insight into material research.Here,we present a brief review of the recent advances of STEM by some representative examples of perovskite transition metal oxides;atomic-scale mapping of ferroelectric polarization,octahedral distortions and rotations,valence state,coordination and spin ordering are presented.We expect that this brief introduction about the current capability of STEM could facilitate the understanding of the relationship between functional properties and these fundamental degrees of freedom in complex oxides.     

Rare Decay B_c → D_s *μ~+ μ~- in a Family Non-Universal Z′ Model

Using the form factors calculated in the three-point QCD sum rules, we calculate the new physics contributions to the physical observables of B c → Ds* μ+ μ decay in a family non-universal Z′ model. Under the consideration of three cases of the new physics parameters, we find that: (a) the Z′ boson can provide large contributions to the differential decay rates; (b) the forward-backward asymmetry (FBA) can be increased by about 47%, 38%, and 110% at most in S1, S2, and extreme limit values (ELV), respectively. In addition, the zero crossing can be shifted in all the cases; (c) when s 0.08, the value of P L can be changed from 1 in the Standard Model (SM) to 0.5 in S1, 0.6 in S2, and 0 in extreme limit values, respectively; (d) the new physics corrections to P T will decrease the SM prediction about 25% for the cases of S1     

可获得高分辨率谱线信息的新型太阳极紫外成像仪

极紫外光谱观测和诊断是研究太阳大气基本物理过程的最重要手段之一。但因为波长短,很多可见光仪器的设计方案不再适用,且极紫外观测只能在太空中开展。国际上现有卫星上的太阳极紫外成像仪和光谱仪都有各自的不足,比如极紫外成像仪不能获得高光谱分辨率的谱线信息;狭缝式光谱仪通过扫描可得到活动区域的信息,但扫描时间过长,对于研究剧烈变化的太阳活动有很大的局限性。这些不足制约了对日冕物质抛射(CME)和耀斑等太阳活动的高精度观测及对其机理的研究：无法看到CME在内日冕的加速过程,而且无法将可见光看到的CME现象同极紫外看到的日面源区直接联系;缺少观测目标的视向速度信息,难以识别CME的触发过程。采用多级衍射成像方式的一种新型太阳极紫外成像仪,除实现传统极紫外成像仪功能外,还可以在太阳活动变化过程中同步获得全日面各区域的光谱信息。新型成像仪可以得到高光谱分辨率数据,用于反演低日冕的等离子体视向速度,获得全日面的速度分布,与同时得到的高空间分辨率图像相结合,可以识别太阳活动现象对应的物质运动, 为空间科学研究提供数据;因为没有狭缝和运动部件,可以实现对大视场的太阳活动区域的高时间分辨率成像,有利于捕捉日面活动的快速变化。新型成像仪采用无狭缝光谱分光成像的设计理念,即同一时间把一定光谱带宽的信息记录到一个二维的图像上,此过程可以看成是从某一个角度将空间和光谱数据立方体投影到一个面上,然后再利用反演得到空间分辨图像和光谱信息。多级光谱成像的光学设计与传统光谱仪最大的不同是其不存在逐行扫描的狭缝,这使得其能够同时获得大视场内太阳的空间信息和光谱信息。因为极紫外波段的特殊性,以及本仪器面向卫星遥感应用,不可能像可见光波段或者医用CT机一样实现很多衍射级的同时成像。因此,新型极紫外成像仪光学系统由反射镜、色散光栅和五个探测器组成,入射的太阳极紫外辐射经过光栅色散后分别由五个级次的探测器接收,其中四个探测器分部接收±1和±2衍射级图像,另外一个接收0级图像。空间信息可以直接从0级图像得到,而光谱信息则需要根据五个级次成像的反演结果得出。介绍了光学系统的设计以及反演算法,并分析了反演算法的误差。光路基于变间距光栅设计,可实现空间分辨率1.8 arcsec·pixel-1, 光谱分辨率7.8×10-3 nm·pixel-1,同时减小了体积和重量,适合空间应用。     

Progress in Modification of Indium-Tin Oxide/Organic Interfaces for Organic Light-Emitting Diodes

The oxide/organic interfaces play crucial roles in the hole injection from the anode electrodes to the emitting organics in organic light-emitting diodes (OLEDs), and hence have strong impacts on the efficiencies and other properties of the devices. Indium-tin oxide (ITO) is currently the most popular anode material used in OLEDs due to several merits, such as good etch ability, good adherence, high transparency, low resistivity, and high work function. Interfacial engineering between the ITO electrode and the overlying organic layers is an important process to obtain the high performance of the diode devices. In this article, recent progress in modification of the ITO/organic interfaces is reviewed, as these interfaces are important to the development of the technologies aiming at improving the electroluminescence, and efficiencies as well as reducing the operation voltages of OLEDs. ITO/Organic interfacial properties can be controlled or modified by simply changing the surface properties of ITO using chemical or physical treatments, and by adding a buffer layer (e.g., metal, oxide, or organic thin films) between the ITO and hole transport or emitting organic layers. The literature data showed that the electroluminescence, efficiencies, and lifetimes of the OLEDs could be greatly increased and the operation voltage considerably decreased when the ITO/organic interfaces have been properly improved.     

Growth and in situ high-pressure reflection high energy electron diffraction monitoring of oxide thin films

Interface and surface physics is an important sub-discipline within condensed matter physics in recent decades. Novel concepts like oxide-electronic device are prompted, and their performance and lifetime are highly dependent on the flatness and abruptness of the layer surfaces and interfaces. Reflection high-energy electron diffraction (RHEED), which is extremely sensitive to surface morphology, has proven to be a versatile technique for the growth study of oxide thin films. A differential pumping unit enables an implementation of RHEED to pulsed laser deposition (PLD) systems, ensuring an in situ monitoring of the film growth process in a conventional PLD working oxygen pressure up to 30 Pa. By optimizing the deposition conditions and analyzing the RHEED intensity oscillations, layer-by-layer growth mode can be attained. Thus atomic control of the film surface and unit-cell control of the film thickness become reality. This may lead to an advanced miniaturization in the oxide electronics, and more importantly the discovery of a range of emergent physical properties at the interfaces. Herein we will briefly introduce the principle of high-pressure RHEED and summarize our main results relevant to the effort toward this objective, including the growth and characterization of twinned La_2/3Ca_1/3MnO₃ thin films and ReTiO_3+δ/2 (Re = La, Nd; δ = 0 ～ 1) A _n B _n O_3n+2 structures, on YSZ-buffered ‘Silicon on Insulator’ and LaAlO₃ substrates, respectively, as well as the study of the initial structure and growth dynamics of YBa₂Cu₃O_7?δ thin films on SrTiO₃ substrate. Presently we have realized in situ monitoring and growth mode control during oxide thin film deposition process.     

Water-solid interfaces probed by high-resolution atomic force microscopy

Water-solid interfaces play important roles across a broad range of scientific and application fields. In the past decades, atomic force microscopy (AFM) has significantly deepened our understanding of water-solid interfaces at molecular scale. In this review, we describe the recent progresses on probing water-solid interfaces by noncontact AFM, highlighting the imaging of interfacial water with ultrahigh spatial resolution. In particular, the recent development of qPlus-based AFM with functionalized tips has made it possible to directly image the H-bonding skeleton of interfacial water under UHV environment. Based on high-order electrostatic forces, such a technique even enables submolecular-level imaging of weakly bonded water structures with negligible disturbance. In addition, the three-dimensional (3D) AFM using low-noise cantilever deflection sensors can achieve atomic resolution imaging at liquid/solid interfaces, which opens up the possibility of probing the hydration layer structures under realistic conditions. We then discuss the application of those AFM techniques to various interfacial water systems, including water clusters, ion hydrates, water chains, water monolayers/multilayers and bulk water/ice on different surfaces under UHV or ambient environments. Some important issues will be addressed, including the H-bonding topology, ice nucleation and growth, ion hydration and transport, dielectric properties of water, etc. In the end, we present an outlook on the directions of future AFM studies of water at interfaces and the challenges faced by this field, as well as the development of new AFM techniques.     

EUV observations of the solar corona with superhigh spatial resolution in the ARCA project

Observing the Sun’s hot corona with sub-second spatial resolution is important in solving a number of basic solar physics problems. The new ARCA satellite observatory under development at the Lebedev Physical Institute, Russian Academy of Sciences, will be first to provide images of the hot solar corona with a spatial resolution of about 0.18 arcsec. Scientific and technical features of the observatory are discussed.     

Surface science of complex environmental interfaces: Oxide and carbonate surfaces in dynamic equilibrium with water vapor

Surface scientists are dealing more and more with complex systems that are challenging to investigate from both experimental and theoretical perspectives. The surface science of complex interfaces, such as environmental interfaces under ambient conditions of temperature and relative humidity, requires both advances in experimental and theoretical methods in order for conceptual insights to emerge. In this prospective, several aspects of environmental interfaces and the field of environmental surface science are discussed. These include: (i) adsorbed water on oxide and carbonate interfaces; (ii) surface chemistry of oxide and carbonate interfaces in the presence of co-adsorbed water; (iii) solvation of ions by co-adsorbed water on environmental interfaces; and (iv) research needs and challenges in environmental surface science.     

Mobility in physics

The compilation of this literature survey was initiated more than a decade ago as a part of science-of-science bibliographies. The collected 150 studies and data sources are concerned with career migration, cross-disciplinary switching, international academic circulation and brain drain of physicists and in physics. The principal criterion for selection of items for listing was that they present fact-finding information on certain enduring aspect of the mobility process. Papers treating more ephemeral approaches are not included but a few conceptual pieces are the exceptions that prove the rule. Most entries are from the published literature. The arrangement of the bibliography is alphabetical by the first author, for each author a chronological order is used. Anonymous and edited works are filed under title. Cross-referencing will facilitate the use. Elementary techniques, such as following up the references in relevant documents, have been applied whenever possible and most documents have been scrutinized by actual reading.Papers on mobility in physics are rather widely dispersed in the literature, ranging from sociological analyses to science policy considerations. Since the information in numerous publications have important professional implications, the bibliography appears at the eve of the European Physical Society seminar on Career outlook for physicists in Europe in Erice, 25–27 June 1981. Though our selection of items does not go beyond physics proper, a few major documents on mobility in physical sciences are added. For a broader literature coverage on mobility in science see the bibliographies by R. T. Barth (1970), S. Dedijer and L. Svenningson (1967), B. M. Gupta (1977) and J. Vlachý (1979). A regular, comprehensive bibliographical service on behalf of the physics community would be desirable to be undertaken on a continuing basis and an appropriate institutional commitment.     

Physics and Its Interfaces with Medicinal Chemistry and Drug Design

Medicinal chemistry is a multidisciplinary subject that integrates knowledge from a variety of fields of science, including, but not limited to, chemistry, biology, and physics. The area of drug design involves the cooperative work of scientists with a diverse range of backgrounds and technical skills, trying to tackle complex problems using an integration of approaches and methods. One important contribution to this field comes from physics through studies that attempt to identify and quantify the molecular interactions between small molecules (drugs) and biological targets (receptors), such as the forces that govern the interactions, the thermodynamics of the drug–receptor interactions, and so on. In this context, the interfaces of physics, medicinal chemistry, and drug design are of vital importance for the development of drugs that not only have the right chemistry but also the right intermolecular properties to interact at the macromolecular level, providing useful information about the principles and molecular mechanisms underlying the therapeutic action of drugs. This article highlights some of the most important connections between physics and medicinal chemistry in the design of new drugs.     

Atomic resolution STEM analysis of defects and interfaces in ceramic materials

Atomic resolution scanning transmission electron microscopy (STEM) analysis, in particular the combination of Z-contrast imaging and electron energy-loss spectroscopy (EELS) has been successfully used to measure the atomic and electronic structure of materials with sub-nanometer spatial resolution. Furthermore, the combination of this incoherent imaging technique with EELS allows us to correlate certain structural features, such as defects or interfaces directly with the measured changes in the local electronic fine-structure. In this review, we will discuss the experimental procedures for achieving high-resolution Z-contrast imaging and EELS. We will describe the alignment and experimental setup for high-resolution STEM analysis and also describe some of our recent results where the combined use of atomic-resolution Z-contrast imaging and column-by-column EELS has helped solve important materials science problems.     

The Atomic Structure of Oxide/Oxide Interface

The physical and chemical properties of thin or ultrathin oxide film deposited on another oxide bulk or thin film usually differ strongly from the bulk. The properties of the heterostructures ultimately rely on the structure and the chemistry of the oxide/oxide interface. Data in the literature indicated that atomically abrupt interfaces between oxides show abnormal electronic and magnetic properties. This article reviews the interfacial structures of oxide/oxide interfaces in an atomic scale. The origins of the unique physical and chemical properties at the oxide/oxide interfaces are also discussed.     

High resolution transmission electron microscopy to study very thin crystalline layers buried at an amorphous-crystalline interface

Structure characterisation of interfaces is a field of widespread application of high resolution transmission electron microscopy for its very high spatial resolution. Specimen thickness and electron optical condition have a deep influence on the high resolution electron transmission microscopy image contrast. Hence, in many cases, the real structure of the sample can be understood from experimental images only by comparison with the relevant simulation. Moreover, the understanding of the contrast variation of a few A at an interface is a task in which even the use of simulation could not produce an unequivocal solution of the experimental result. In this paper high resolution transmission electron microscopy image simulations show that two monolayers of crystalline material buried at an amorphous-crystalline interface can be successfully revealed and interpreted. The simulated images reproduce the experimental results as obtained from the Al/Si-As/n-GaAs (001) heterostructure.     

First-principles calculation of contact electrification and validation by experiment

Contact electrification is one of the most well-known phenomena in physics and examples arise in almost every industry. However, a scientific basis for contact charging remains unknown. Here, we present a theoretical study of contact electrification, supported by experiments, to calculate for the first time charge transfer between material surfaces from first principles physics. Electronic structure calculations and experiments are performed on single-crystal alumina (sapphire) and silicon oxide (quartz) surfaces, which have well-ordered structures that enable rigorous modeling. Both experiments and calculations show that sapphire charges positively and quartz charges negatively. The calculations cannot determine the magnitude of charge densities remaining on separated surfaces from first principles, as these are non-equilibrium effects, but our analysis is consistent with experimentally obtained charge densities of 10 μC/m². These results indicate the possibility of quantitatively predicting and explaining contact electrification from only the molecular structure of material surfaces.