Single crystalline ordered silicon wire/Pt nanoparticle hybrids for solar energy harvesting

In this work, we developed a method combining lithography and metal-catalyzed Si etching to fabricate highly ordered Si wire arrays with uniform coverage over an entire 4 in. wafer. The wire periodicity and dimensions depend on the lithography and the etching conditions. Photoelectrochemical measurements show that the as-prepared Si wire samples are photoactive owing to surface enhancement and become especially effective in solar-to-electrical conversion and water splitting after surface modification with Pt nanoparticles.     

Formation of porous silicon by metal particle enhanced chemical etching in HF solution and its application for efficient solar cells

Porous Si was formed on n-Si wafers, modified with fine Pt particles, by simply immersing the wafers in a HF solution without a bias or an oxidizing agent. The Pt particles were deposited onto n-Si wafers by electrodeposition or electroless displacement deposition. SEM images show that many pores, ranging between 0.1 and 0.8 μm in diameter and covered with a luminescent nanoporous layer, were formed only on the Pt-modified area of the n-Si surface by immersion in 7.3 M HF solution for 24 h. The weight loss of Pt-electrodeposited n-Si wafer was 0.46 mg cm⁻², corresponding to ca. 2 μm in thickness. The weight loss and the structure of porous Si changed with the etching conditions, such as concentration of dissolved oxygen in the HF solution, distribution density of metal particles, and different kinds of metal particles. A photoelectrochemical solar cell equipped with a Pt-particle-modified porous n-Si electrode gave 13.3 mW cm⁻² of maximum output power, which corresponds to a 13% conversion efficiency and is higher than that for the Pt-particle-modified flat n-Si electrode.     

Controlled Aqueous Growth of Hematite Nanoplate Arrays Directly on Transparent Conductive Substrates and Their Photoelectrochemical Properties

Two‐dimensional (2D) hematite nanoplate arrays were synthesized directly on fluorine‐doped tin oxide (FTO)‐coated glass by using a facile and novel hydrothermal method. High‐temperature annealing retained the morphology of the nanoplate arrays while simultaneously introducing porosity. The thickness and length of the nanoplates could be tailored by adjusting the precursor composition. Photoelectrochemical (PEC) measurements showed that the photocurrent generated with bare hematite nanoplate photoelectrode under backside illumination was about four times of that under frontside illumination in the entire bias range used, which suggested that slow electron transport was a limiting factor for its PEC performance. Upon Sn doping and Co‐Pi co‐catalyst addition, the photocurrent increased significantly owing to the enhancement of electron conductivity and oxidation kinetics. Electrochemical impedance spectroscopy (EIS) measurements were conducted to understand the surface properties of the nanoplate arrays. Since this strategy is simple, cost‐effective, and highly reproducible, it provides exciting opportunities for the large‐scale growth of porous 2D metal oxide photoelectrodes for a variety of photoelectrochemical and photocatalytic applications.     

Fast speed nano-sized macropore formation on highly-doped n-type silicon via strong oxidizers

The growth of nano-sized macropores at high speed is studied in this work. Nice macropores with diameters of 60–100 nm and aspect ratio up to 2500 were formed by anodic etching on highly-doped n-type silicon without illumination. The HF-containing electrolytes were modulated with strong oxidizer, H₂O₂, which was also attempted by a few other researchers, but did not lead to the expected macropore formation. Our findings reveal that the pore morphology and etching speed are on dependence of HF concentration and the applied current density. The parameter window of macropore formation, corresponding to the HF concentration ranging from 33% to 67% (by volume) in our experiment, is rather large. In addition, the growth speed can be driven up to 1800 μm/h, while the pores are straight, cylindrical and rather smooth. The current-burst-model is applied to interpret the mechanism of such nano-sized macropore formation.     

Formation of titanium oxide nanogrooves island arrays by anodization

In the present work, titanium oxide nanogrooves island arrays (NGIAs) surface is formed by anodization of Ti foil in the high HF content electrolyte. The influences of anodization voltage and HF concentration of electrolyte on the formation of NGIAs are studied to control the depth and the distribution of nanogrooves. The formation mechanism of NGIAs is discussed. The strategy derived from the results is expected to apply to the NGIAs formation of other oxides which share the similar anodization behavior as titanium oxide.     

Nucleophilic identity substitution reactions. The reaction between hydrogen fluoride and protonated alkyl fluorides

The gas phase reactions between HF and the protonated alkyl fluorides MeFH+, EtFH+, Pr(i)FH+, and Bu(t)FH+ have been studied using ab initio methods. The potential energy profiles for both nucleophilic substitution (S(N)2) and elimination (E2) pathways have been investigated. Both backside Walden inversion and frontside nucleophilic substitution reaction profiles have been generated. Backside substitution is very favourable, but shows relatively little variation with the alkyl group. Frontside substitution reaction barriers are only slightly higher than the barrier for backside substitution for HF + MeFH+, and the difference in barrier heights for frontside and backside displacement seems negligible for the larger alkyl groups. Reaction barrier trends have been analysed and compared with the results of similar studies of the H2O/ROH2+ and NH3/RNH3+ systems (R = Me, Et, Pr(i), and Bu(t)). Compared to the two other classes, protonated fluorides have extreme structures which, with the exception of the Me substrate, are weakly bound complexes between an alkyl cation and HF. The results nourish the idea that nucleophilic substitution reactions are better understood in view of competition between frontside and backside substitution than from the traditional S(N)1/S(N)2 perspective.     

Determination of metallic impurities in a silicon wafer by local etching and electrothermal atomic absorption spectrometry.

An etching technique for the determination of the metallic impurities distribution in silicon wafers has been developed. An area of 10 mmphi and 10 microm depth was etched by 100 microL of an etching solution with a HF and HNO3 mixture. The acid matrix was evaporated on the wafer surface by IR lamp illumination and vacuum exhaust. Metallic impurities remaining on the wafer surface were redissolved into the collection solution, which was measured by electrothermal atomic absorption spectrometry (ET-AAS). The recovery invested by local etching/ET-AAS was within 95 - 112% for Fe, Cu and Ni. The detection limit (3sigma) for Fe, Cu and Ni in silicon was 1 x 10(13) atoms/cm3. To confirm the applicability, local etching was applied to evaluate the effects of metallic impurities in a gettering study and the electronic properties of semiconductor devices. It was found that local etching is a useful sample preparation technique for the analysis of metallic impurities in a specific area on a silicon wafer.     

Regular arrays of triangular‐microstructure formed on silicon (111) surface via ultrafast laser irradiation in KOH solution

The regular micrometer‐scale triangular arrays were formed using ultrafast femtosecond laser irradiation on (111) surface of silicon wafer immersed in KOH solution (0.1 g/ml). At low laser fluence, the resulting surface is covered by triangular pits microstructures, whereas at high laser fluence, the structures are transformed to multilayer‐triangular stacks‐microstructures. The number of triangular stacks layer increased as the laser fluence increased. The formation of triangle microstructure arrays depends on both silicon surface crystallographic orientation and the concentration of KOH solution. Either for lower KOH solution concentration (0.02 g/ml) or other silicon crystallographic orientation, triangle arrays cannot be obtained. We attribute the formation of triangular microstructure arrays to the laser‐assisted chemical etching process. Copyright © 2013 John Wiley & Sons, Ltd.     

TiCl4(THF)2 impregnation on a flat SiOx/Si(1 0 0) and on polycrystalline Au foil: determination of surface species using XPS

TiCl₄(THF)₂ was impregnated by spin-coating on a Si(1 0 0) wafer covered with a thin SiO_x layer and on a polycrystalline Au foil. The nature of the surface species was determined at room temperature and after annealing, by X-ray Photoelectron Spectroscopy (XPS) and Atomic Force Microscopy (AFM). A mixed Si:O:Ti interfacial layer was formed on the silicon substrate while in the case of Au, TiOCl_x and TiO_x were the main surface species at room temperature. Annealing at 723 K leads to the total desorption of the Cl atoms, and in both cases a significant amount of Ti atoms was reduced to the Ti³⁺ state. AFM measurements revealed a homogenous distribution of nano-sized TiO_x clusters with semi-ellipsoid shape and increased contact area with the underlying silica.     

The enhancement of photoluminescence of n-type porous silicon by Hall-effect assistance during electrochemical anodization

In this study, n-type porous silicon (n-PS) films with high-aspect-ratio Si-tips are formed with the assistance of Hall-effect during the electrochemical anodization. Lorentz force sweeps down the majority carriers (electrons) in n-type Si to enhance the anodization etching. Surface layers are inverted from n-type to p-type, so sufficient holes can continuously appear on the surface to participate in chemical reaction during the etching process. Illumination is not necessary in this process, so the problem of illumination-depth limitation is solved. The etching current, morphology, and photoluminescence of the n-PS prepared in this way are investigated. Strong visible photoluminescence emissions at room temperature are demonstrated on n-PS.     

Preparation of Self-Organized Porous Polymer Masks for Si Dry Etching

Summary: Self-organized honeycomb-patterned polymer films were prepared by using condensed water droplet arrays as templates. Porous polymer masks for dry etching were easily prepared on Si substrates by peeling off the honeycomb-patterned films. After dry etching, hexagonally-arranged micro-pores were formed on the surface of Si substrates.     

Catalytic amplification of the soft lithographic patterning of Si. Nonelectrochemical orthogonal fabrication of photoluminescent porous Si pixel arrays

Photoluminescent, porous silicon pixel arrays were fabricated via a Pt-promoted wet etching of p-type Si(100) using a 1:1:1 EtOH/HF/H2O2 solution. The pixels were fabricated with micrometer-scale design rules on a silicon substrate that had been modified with an octadecyltrichlorosilane (OTS) monolayer patterned using microcontact printing. The printed OTS layer serves as an orthogonal resist template for the deposition of a Pt(0) complex, which preferentially deposits metal species in areas not covered with OTS. The Pt centers generate a localized oxidative dissolution process that pits the Si in the Pt-coated regions, resulting in the formation of a porous silicon microstructure that luminesces around 580 nm upon illumination with a UV source. Scanning electron microscopy and fluorescence microscopy images of the fabricated porous silicon structures showed that features in the size range of approximately 10-150 microm, and possibly smaller, can be generated by this catalytically amplified soft lithographic patterning method. Importantly, the OTS acts as an etch mask, so that, even with significant hole transport, etching is confined to areas coated with the Pt(0) complex.     

Electrochemical lithography: fabrication of nanoscale Si tips by porous anodization of Al/Si wafer

Porous anodization of Al/Si wafer in sulfuric acid results in the formation of Si nanotips on the surface of Si substrate with ultrahigh packing density.     

Electrochemical etching of silicon carbide

Both n- and p-type SiC of different doping levels were electrochemically etched by HF. The etch rate (up to 1.5 μm/min) and the surface morphology of p-type 6H-SiC were sensitive to the applied voltage and the HF concentration. The electrochemical valence of 6.3 ± 0.5 elementary charge per SiC molecule was determined. At p-n junctions (p-type layer on a n-type 6H-SiC substrate) a selective etching of the p-type epilayer could be achieved. For a planar 6H-4H polytype junction (n-type, both polytypes with equal doping concentrations) the 4H region was selectively etched under UV illumination. Thus polytype junctions could be marked by electrochemical etching. With HCl instead of HF no etching of SiC occurs, but a SiO₂ layer (thickness up to 8 μm) is formed by anodic oxidation. Received: 29 October 1998 / Accepted: 27 January 1999     

微米级SiO合成多孔氧化硅/硅/碳储锂复合材料

以微米级SiO为原料,通过简单的高温煅烧、碳包覆和酸刻蚀制备多孔氧化硅/硅/碳复合材料,复合材料比表面积和平均孔径分别为32.9 m~2/g和3 nm。纳米硅分散在缓冲介质氧化硅多孔体系中,表面包覆一层薄而均匀的碳层。所得的复合材料具有较好的循环稳定性,在0.3 m A/g下,50次循环后可逆容量保持在645.1 m A·h/g。多孔结构、氧化硅缓解了硅在脱嵌锂过程的体积膨胀,碳层提高了复合材料的导电性和结构稳定性。     

Photoassisted tuning of silicon nanocrystal photoluminescence

Silicon is a rather inefficient light emitter due to the indirect band gap electronic structure, requiring a phonon to balance the electron momentum during the interband transition. Fortunately, momentum requirements are relaxed in the 1-5 nm diameter Si crystals as a result of quantum confinement effects, and bright photoluminescence (PL) in the UV-vis range is achieved. Photoluminescent Si nanocrystals along with the C- and SiC-based nanoparticles are considered bioinert and may lead to the development of biocompatible and smaller probes than the well-known metal chalcogenide-based quantum dots. Published Si nanocrystal production procedures typically do not allow for the fine control of the particle size. An accepted way to make the H-terminated Si nanocrystals consists of anodic Si wafer etching with the subsequent breakup of the porous film in an ultrasound bath. Resulting H-termination provides a useful platform for further chemical derivatization and conjugation to biomolecules. However, a rather polydisperse mixture is produced following the ultrasonic treatment, leading to the distributed band gap energies and the extent of surface passivation. From the technological point of view, a homogeneous nanoparticle size mixture is highly desirable. In this study, we offer an efficient way to reduce the H-terminated Si nanocrystal diameter and narrow size distribution through photocatalyzed dissolution in a HF/HNO3 acid mixture. Si particles were produced using the lateral etching of a Si wafer in a HF/EtOH/H2O bath followed by sonication in deaerated methanol. Initial suspensions exhibited broad photoluminescence in the red spectral region. Photoassisted etching was carried out by adding the HF/HNO3 acid mixture to the suspension and exposing it to a 340 nm light. Photoluminescence and absorbance spectra, measured during dissolution, show the gradual particle size decrease as confirmed by the photoluminescence blue shift. The simultaneous narrowing of the photoluminescence spectral bandwidth suggests that the dissolution rate varies with the particle size. We show that the Si nanoparticle dissolution rate depends on the amount of light adsorbed by the particle and accounts for the etching rate variation with the particle size. Significant improvement in the PL quantum yield is observed during the acid treatment, suggesting improvement in the dangling bond passivation.     

A permanent optical storage medium exhibiting ultrahigh contrast, superior stability, and a broad working wavelength regime

In this paper we demonstrate an optical storage medium having advantages of ultrahigh contrast, superior stability, and broadband working wavelengths. Combining a single shot of deep-ultraviolet (UV) laser illumination with a Au particle-assisted etching process, we formed broadband antireflective, one-dimensional silicon nanowire arrays (SiNWs) with selectively at specific positions. Optical measurements and three-dimensional finite-difference time domain (3D-FDTD) simulations revealed ultrahigh reflection contrast between the Au and the SiNWs for both far- and near-field regimes. Relative to typical organic-based storage media, Au films and SiNWs are more stable, both chemically and thermally; therefore, we suspect that this new storage medium would exhibit high stability toward moisture, sunshine, and elevated temperatures.     

Fabrication of size-tunable gold nanoparticles array with nanosphere lithography, reactive ion etching, and thermal annealing

Two-dimensional ordered arrays of gold (Au) nanoparticles were fabricated using two different variants of the nanosphere lithography technique. First, ordered arrays of polystyrene nanospheres on Si substrate were used as deposition masks through which gold films were deposited by electron beam evaporation. After the removal of the nanospheres, an array of triangular Au nanodisks was left on the Si substrate. After thermal annealing at increasing temperature, systematic shape transition of the nanostructures from original triangular Au nanodisks to rounded nanoparticles was observed. This approach allows us to systematically vary the size and morphology of the particles. In the second and novel technique, we made use of reactive ion etching to simultaneously reduce the dimension of the masking nanospheres and create arrays of nanopores on the substrate prior to the deposition of the Au films. These samples were subsequently annealed, which resulted in size-tunable and ordered Au nanoparticle arrays with the nanoparticles nested in the nanopores of the templated substrate. With the nanoparticles anchored in the nanopores, the substrate could be useful as a template for growth of other nanomaterials.     

The mechanism of HF formation in LiPF6 based organic carbonate electrolytes

Spectroscopic ellipsometry was used to study the time-dependent formation of HF upon the thermal degradation of LiPF₆ at 50 °C in a lithium ion battery electrolyte containing ethylene carbonate and diethyl carbonate. The generated HF was monitored by following the etching rate of a 300 nm thick SiO₂ layer, grown on both sides of a silicon wafer substrate, as a function of the immersion time in the electrolyte at 50 °C. It was found that the formation of HF starts after 70 h of exposure time and occurs following several different phases. The amount of generated HF was calculated using an empirical formula correlating the etching rate to the temperature. Combining the results of the HF formation with literature data, a simplified mechanism for the formation of the HF involving LiPF₆ degradation, and a simplified catalytical reaction pathway of the formed HF and silicon dioxide are proposed to describe the kinetics of HF formation.     

Fabrication of highly ordered TiO2 nanotube arrays using an organic electrolyte

Anodization of titanium in a fluorinated dimethyl sulfoxide (DMSO) and ethanol mixture electrolyte is investigated. The prepared anodic film has a highly ordered nanotube-array surface architecture. Using a 20 V anodization potential (vs Pt) nanotube arrays having an inner diameter of 60 nm and 40 nm wall thickness are formed. The overall length of the nanotube arrays is controlled by the duration of the anodization, with nanotubes appearing only after approximately 48 h; a 72 h anodization results in a nanotube array approximately 2.3 mum in length. The photoelectrochemical response of the nanotube-array photoelectrodes is studied using a 1 M KOH solution under both UV and visible (AM 1.5) illumination. Enhanced photocurrent density is observed for samples obtained in the organic electrolyte, with an UV photoconversion efficiency of 10.7%.