Spectral coincidences between CO-Laser and nitric-oxide. A reinvestigation

The distribution of the localized levelsg(ε) in the forbidden gap of amorphous silicon is calculated from the dependence of the Fermi energy on the doping concentration of phosphorus donors and boron acceptors. The minimum ofg(ε) is verified by this method to be in the order of 10¹⁷ to 10¹⁸ cm⁻³eV⁻¹, whereas the maxima ofg(ε), which have been reported in the literature, are not confirmed.     

Electronic states of boron in superconducting MgB2 studied by11B NMR

Nuclear magnetic resonance (NMR) spectra and nuclear spin-lattice relaxation rateT ₁⁻¹ of¹¹B have been measured in superconducting polycrystalline MgB₂ with 7_c^ons = 39.5 K. It is shown that (T ₁T⁻¹ and the Knight shiftK _s are independent of temperature and nearly isotropic aboveT _c. Both of these quantities are decreased gradually in going to the superconducting state. According to NMR data the density of states near the Fermi level is flat at the scale of about 500 K. Some conclusions on the orbital content of the density of states at the Fermi level were drawn and compared with the results of the band structure calculations.     

Renormalization group functions of the φ<Superscript>4</Superscript> theory from high-temperature expansions

It has been previously shown that calculation of the renormalization group (RG) functions of scalar ϕ⁴ theory reduces to analysis of thermodynamic properties of the Ising model. Using high-temperature expansions for the latter, RG functions of the four-dimensional theory can be calculated for arbitrary coupling constant g with an accuracy of 10⁻⁴ for the Gell-Mann-Low function β(g) and with an accuracy of 10⁻³–10⁻² for anomalous dimensions. The expansions of the renormalization group functions up to the 13th order in g ^−1/2 have been obtained.     

Narrowing of the vibrational spectrum under compression of liquid carbon dioxide

The broadening and shift of the Q bands of the 1388/1285-cm⁻¹ Fermi doublet of carbon dioxide have been measured by means of the spectroscopy of coherent anti-Stokes Raman scattering in a wide density range realized at compression in dense gaseous and liquid states. The spectrum of the low-frequency Q band exhibits an essential narrowing upon the compression of the liquid in the density range of 320–400 amagat from a maximum width of about 2.2 cm⁻¹ to about 1.7 cm⁻¹ determined by elastic dephasing. The observed dependence is connected with the progressive narrowing of the spectral contribution attributed to the collapsed rotational structure.     

Semiempirical study of perturbations of the Landé g factors of electronic-vibrational-rotational levels of hydrogen: II. i 3 g − and j 3Δ g − states of the H2, HD,and D2 molecules

The values of the Landé g factors of the i ³Π _g ⁻ , v, N and j ³Δ _g ⁻ , v, N states of the H₂, HD, and D₂ molecules have been found semiempirically for the following vibrational and rotational quantum numbers: v≤3; N≤7 for H₂; N≤5 for HD; and N≤11 for D₂. These values were obtained in terms of the nonadiabatic model, which takes into account the interaction between the 3dπ³Π_g and 3dδ³Δ_g states with the same values of v and N in the approximation of pure precession, with the use of semiempirical values of the expansion coefficients of the wave functions in the Born-Oppenheimer basis determined by us previously and the results of numerical calculation of the overlap integrals of the vibrational wave functions of these states. The results obtained for the H₂ molecule are in good agreement with the data in the literature. For the i ³Π _g ⁻ and j ³Δ _g ⁻ states of the HD and D₂ molecules, the g factors were found for the first time. This made it possible to study for the first time the role of the isotopic effect in the perturbation of the dependences of the g factors of rovibrational levels on v and N for the triplet electronic states of the hydrogen molecule. It was found that the interference effects of interaction between the 3dπ³Π_g and 3dδ³Δ_g states lead both to significant differences—up to 8, 6, and 11 times for H₂, HD, and D₂, respectively (the i ³Π _g ⁻ state), 20 times for H₂ and HD, and two orders of magnitude for D₂ (the j ³Δ _g ⁻ state)—between the nonadiabatic values of the g factors and the corresponding adiabatic values for some isotopomers of the hydrogen molecule and to significant differences—up to 9 and 1.5 times for the j ³Δ _g ⁻ and i ³Π _g ⁻ states, respectively—in the nonadiabatic values of the g factors of rovibrational levels of different isotopomers of the hydrogen molecule. __________ Translated from Optika i Spektroskopiya, Vol. 96, No. 1, 2004, pp. 42–54. Original Russian Text Copyright ? 2004 by Astashkevich.     

Radial distribution of hydrogen atoms in H 2 plasma

The radial intensities of the H _α and H ₂ Fulcher α (d ³Π_u − a ³Σ_g) system spectral lines were used to obtain the radial distribution of hydrogen atoms in H ₂ plasma discharge. We have obtained new equations in order to describe the distribution of atoms in molecule discharges. Abel’s integral equation has been solved by Tikhonov’s regularization procedure. Model functions have been introduced to examine the limitations in the applicability of this method. An estimation of the degree of dissociation in the radial direction has been obtained.     

Density-functional calculation of the Coulomb repulsion and correlation strength in superconducting LaFeAsO

Constrained density functional theory scheme in Wannier functions formalism has been used to calculate Coulomb repulsion U and Hund’s exchange J parameters for Fe-3d electrons in LaFeAsO. Results strongly depend on the basis set. When O-2p, As-4p, and Fe-3d orbitals are included, computation results in U = 3–4 eV. With the basis set restricted to Fe-3d orbitals only, computation gives parameters corresponding to F ⁰ = 0.8 eV, J = 0.5 eV. Local Density Approximation combined with Dynamical Mean-Field Theory calculation with these parameters results in weakly correlated electronic structure. The article is published in the original.     

A new optical method for measuring the electron-phonon interaction parameter λ〈Ω2〉 using the spectral dependence of the relaxation rate

The spectral dependence of the electron-phonon relaxation rate γ_e−ph(ℏω) in metals is studied in pump-supercontinuum-probe (PSCP) experiments with femtosecond time resolution. Investigation of this spectral dependence, which exhibits a substantial slowing of the relaxation rate γ_e−ph(ℏω) near the Fermi level E _F , using the parametrization γ_e−ph(ℏω)∝λ〈Ω²〉 (ℏω−E _F )² makes it possible to determine directly the electron-phonon interaction parameter λ〈Ω²〉. The parameter λ〈Ω²〉 for YBa₂Cu₃O_7−δ is analyzed using this method. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 5, 329–332 (10 September 1999)     

Generalized holographic and Ricci dark energy models

In this paper, we consider generalized holographic and Ricci dark energy models where the energy densities are given as ρ _R =3c ² M _pl² Rf(H ²/R) and ρ _h =3c ² M _pl² H ² g(R/H ²), respectively; here f(x), g(y) are positive defined functions of the dimensionless variables H ²/R or R/H ². It is interesting that holographic and Ricci dark energy densities are recovered or recovered interchangeably when the function f(x)=g(y)≡1 or f(x)=Id and g(y)=Id are taken, respectively (for example f(x),g(x)=1−ε(1−x), ε=0or1, respectively). Also, when f(x)≡xg(1/x) is taken, the Ricci and holographic dark energy models are equivalent to a generalized one. When the simple forms f(x)=1−ε(1−x) and g(y)=1−η(1−y) are taken as examples, by using current cosmic observational data, generalized dark energy models are considered. As expected, in these cases, the results show that they are equivalent (ε=1−η=1.312), and Ricci-like dark energy is more favored relative to the holographic one where the Hubble horizon was taken as an IR cut-off. And the suggested combination of holographic and Ricci dark energy components would be 1.312R−0.312H ², which is 2.312H²+1.312[(H)\dot]2.312H^{2}+1.312\dot{H} in terms of H ² and [(H)\dot]\dot{H} .     

Experimental investigations of the nuclear level density by using heavy ion reactions

The transition of the level density parameter a _off from the low excitation energy value a _off=A/8 MeV⁻¹ to the Fermi gas value a _FG ∼ A/15 MeV⁻¹ was discovered a few years ago studying particle spectra evaporated from hot compound systems of A∼ 160. A number of experiments have been recently performed to confirm the earlier findings and extend the investigation to other mass regions and to higher excitation energies. Furthermore, precision coincidence experiments have been done in the lead region in which evaporation residues are tagged by low energy gammarays. Those experiments open the possibility of a detailed study of the level densities in nuclei where the shell effects are important.     

A study of 223Ra populated by α-decay

The low spin states of ²²³Ra have been populated via α-decay from ²²⁷Th which was itself produced following β⁻ decay of an ²²⁷Ac source. α–γ and α−e _K,L,M angular correlation measurements have been analysed using the correct ground state spins of ²²⁷Th(=1/2⁺) and ²²³Ra(=3/2⁺) for the first time. The analysis has allowed unique J^π values to be assigned to almost all levels below 400 keV excitation in ²²³Ra. Values of (g _K−g _R)/Q ₀ have been deduced for several members of the K= 3/2^± bands (for the first time in an odd N nucleus in this mass region) allowing estimates of g _K and g _R to be extracted. The values of g _K and g _R are not significantly different for the positive and negative parity band members and tend to support other strong evidence that stable octupole deformation exists in ²²³Ra at low excitation energies. Received: 17 November 1997 / Revised version: 8 January 1998     

Paramagnetic defects in neutron-irradiated phenakite crystals

Radiation-disordered crystals of phenakite Be₂SiO₄ (at fast neutron fluences of (0.75, 1.0, 1.2, 6.6, 8.5) × 10¹⁸ cm⁻²) have been investigated using EPR spectroscopy. It has been established that the main radiation damages predominantly occur in the silicon-oxygen sublattice of the crystal. Vacancy centers (E′ centers, g = 2.0015), defects of the displaced oxygen type, and O⁻ hole-type centers have been revealed. The paramagnetic absorption signal with the parameters g _x = 2.0218, g _y = 2.0124, and g _z = 2.0027 has been identified with the [SiO₄]³⁻ complex (a variety of O⁻ centers). The intense EPR signals with the parameters g _x = 2.0526, g _y = 2.0020, g _z = 2.0066 and g _x = 2.0290, g _y = 2.0030, g _z = 2.0099 have been assigned to two types of O₂⁻ molecular ions with different local environments. The theoretical models of radiation-induced centers have been discussed by comparing the EPR and optical spectroscopic data.     

Three-dimensional correlated-fermion phase separation from analysis of the geometric mean of the individual susceptibilities

A quasi-Gaussian approximation scheme is formulated to study the strongly correlated imbalanced Fermions thermodynamics, where the mean-field theory is not applicable. The non-Gaussian correlation effects are understood to be captured by the statistical geometric mean of the individual susceptibilities. In the three-dimensional unitary fermions ground state, a universal nonlinear scaling transformation relates the physical chemical potentials with the individual Fermi kinetic energies. For the partial polarization phase separation to full polarization, the calculated critical polarization ratio is δ _C = [1−(1−ξ)^6/5]/[1+(1−ξ)^6/5] ≐ 0.34. ξ = 4/9 gives the ratio of the symmetric ground state energy density to that of the ideal fermion gas. Supported by the National Natural Science Foundation of China (Grant Nos. 10875050 and 10675052), the Fund of Central China Normal University, and the Foundation of Ministry of Education of China (Grant No. IRT0624)     

Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet–NO Ge-surface pretreatment

Reactive cosputtering is employed to prepare high-permittivity HfTiO gate dielectric on n-Ge substrate. Effects of Ge-surface pretreatment on the interface and gate leakage properties of the dielectric are investigated. Excellent performances of Al/HfTiO/GeO _x N _y /n-Ge MOS capacitor with wet–NO surface pretreatment have been achieved with a interface-state density of 2.1×10¹¹ eV⁻¹ cm⁻², equivalent oxide charge of −7.67×10¹¹ cm⁻² and gate leakage current density of 4.97×10⁻⁵ A/cm² at V _g =1 V.     

EPR of trivalent iron ions in a LiCaAlF6 crystal

The orientational dependences of the EPR spectra of Fe³⁺-doped LiCaAlF₆ single crystals (space group P31c, Z=2), grown at the Laboratory of Magnetic Radio Spectroscopy at Kazan’ State University, have been investigated in detail. The spectrum is described by a trigonal spin Hamiltonian with the following parameters: B ₂₀=40.072×10⁻⁴ cm⁻¹, B ₄₀=−5.799×10⁻⁴ cm⁻¹, B ₄₃=−4.281×10⁻⁴ cm⁻¹, A _s=24.33±1, A _p=6.13±1, g _∥=g _⊥=2.00217±0.0003. A theoretical calculation of the hyperfine structure parameters shows that they are described quite well when allowance is made for the overlapping of the wave functions of the paramagnetic center and the ligands (F⁻). Fiz. Tverd. Tela (St. Petersburg) 39, 488–490 (March 1997)     

ESR of V4+ in α-RbTiOPO4 single crystals

We have recorded and investigated the ESR spectrum of vanadium-doped α-RbTiOPO₄ single crystals in the temperature interval 77–300 K. Two types of structurally distinct centers, V1 and V2, with a 4:1 ratio of the peak intensities were observed. The angular dependences of the resonance magnetic fields are described by a spin Hamiltonian corresponding to axial symmetry with the parameters g _∥1=1.9305, g _⊥1=1.9565, A _∥1=−168.2×10⁻⁴cm⁻¹, and A _⊥1=−54.3×10⁻⁴cm⁻¹ for V1 centers and g _∥2=1.9340, g _⊥2=1.9523, A _∥2=−169.0×10⁻⁴cm⁻¹, and A _⊥2=−55.2×10⁻⁴cm⁻¹ for V2 centers. A model of a paramagnetic center is proposed: The vanadium ions replace titanium ions in two structurally distinct positions Ti1 and Ti2 (V1 and V2 centers, respectively). The possibility that a VO²⁺ ion forms when α-RbTiOPO₄ crystals and crystals of the KTP group (KTiOPO₄, NaTiOPO₄, α-and β-LiTiOPO₄), studied earlier, are doped with vanadium is discussed. Fiz. Tverd. Tela (St. Petersburg) 40, 534–536 (March 1998)     

Oscillations of the magnetoresistance in an inclined magnetic field for MIS structures on (100) silicon with a high electron density

At electron densities N _S>6×10⁻² cm⁻²² a second series of oscillations, which are tentatively attributed to population of the second energy subband, is observed in addition to the main series of Shubnikov-de Haas oscillations. A change in phase of the oscillations of the second series is observed at some angle of inclination α_e of the field. The measured value of α_e is used to calculate the ratio of the cyclotron mass to the effective g factor. The maximum possible cyclotron mass is also determined as m _H< 0.32m _e. On this basis it is concluded that the second series of oscillations is due to electrons which have an in-plane effective mass m*≈0.2m _e and which belong to the same valleys of the Fermi surface as in the case of the main oscillations. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 2, 136–140 (25 January 1998)     

Single-Crystal EPR Identification of a Low Hyperfine Value and Interstitial Position of Copper Impurity in Diaquabis[malonato(1-)-κ2O,O′] Zinc(II)

Electron paramagnetic resonance studies have been carried out at 300 K on the Cu(II)-doped [Zn(C₃H₂O₄)₂(H₂O)₂] system in single-crystal and powder forms in order to rationalize the low parallel ⁶³Cu hyperfine value. Angular variation of the hyperfine resonances in the three orthogonal planes shows the presence of only one magnetic site with g and A values equal to g _zz = 2.455, g _yy = 2.121, g _xx = 2.105 and A _zz = 160.9 · 10⁻⁴ cm⁻¹, A _yy = 12.5 · 10⁻⁴ cm⁻¹, A _xx = 7.35 · 10⁻⁴ cm⁻¹. The crystal structure of the host lattice is isostructural with the corresponding cobalt complex and contains two molecules per unit cell. The low magnitude of A _zz value for the complex is rationalized in terms of an admixture of the ground state with the excited state and delocalization of the unpaired spin density onto the ligands. In addition, the highest hyperfine value obtained from the single-crystal data (160.9 · 10⁻⁴ cm⁻¹) is considerably larger than that obtained from the powder spectrum (138 · 10⁻⁴ cm⁻¹). Authors' address: P. Sambasiva Rao, Department of Chemistry, Pondicherry University, Pondicherry 605014, India     

Magnetically induced spatial dispersion in the cubic magnetic semiconductors Cd1−x MnxTe

In the transverse geometry we have detected birefringence that is linear in the magnetic field B and the light wave vector k in the cubic magnetic semiconductors Cd_1−x Mn_xTe (0⩽x⩽0.52). The effect was found to be large, ∼1 (deg cm⁻¹ T⁻¹), and highly anisotropic, in contrast to the Faraday and Voigt effects. The phenomenon is represented by terms of type γ _ijklB_kk_l in the permittivity tensor ε _ij and can be described by two parameters, A and g. Spectral studies have shown that the normalized parameters A/x and g/x are independent of x, i.e., the effect can be related to the Mn²⁺ ions. Below the edge E _g of the forbidden band, the dispersion of A is described by a (E _g−E)^−1.4-dependence, while the dispersion of g is nil. Theoretical analysis has shown that the spectral curves for A and g can be explained by the special features of the dispersion laws for electrons and holes (features related to the fact that there is no inversion center) and by the dependence of the parameters of the exchange interaction on the electron wave vector. Zh. éksp. Teor. Fiz. 114, 1018–1033 (September 1998)     

Covalent binding parameters and the ground state wavefunctions of vanadyl ion complexes

The Steven’s method of molecular orbitals for octahedral complexes containing transition metal ions has been used for estimating the binding parameters and interpreting theg factors of VO ₂ ⁺ ion in single crystals. The expressions forg factors have been given in terms ofK _‖ andK _⊥ taking into account the tetragonal crystalline field and covalent binding effects. Computations show thatK _⊥ should be less than 0.066 in order to fit the experimentalg values. The ground state wave function (GSWF) of VO ₂ ⁺ ion doped in different single crystals has been estimated using crystal field theory. The GSWF is found to be ind _xy state with slight admixture of the excited states ,d _xz andd _yz. The hyperfine interaction parameterP and Fermi contact termX have also been estimated.