两步法制备的自旋阀巨磁电阻效应研究

采用新的磁控溅射两步法沉积自旋阀多层膜,不仅交换耦合作用大大增强,而且可以提高磁电阻比值和降低层间耦合作用.得到磁电阻比值～26%,交换耦合场～28kA/m,层间耦合场～01kA/m.自旋阀的下部(缓冲层(Ta)/自由层(NiFe)/中间隔离层(Cu))在低氩气压下沉积、上部(被钉扎层(NiFe)/反铁磁钉扎层(FeMn)/覆盖层(Ta))则在高氩气压下沉积.前者保证了自旋阀具有强(111)晶体织构,平整的NiFe/Cu界面和致密的Cu层,抑制了层间耦合作用;后者则促进小尺寸磁畴生长和增加NiFe/FeM 关键词：     

双合成反铁磁结构及其对自旋阀巨磁电阻效应的影响

用直流磁控溅射方法制备了双合成反铁磁结构Co₉₀Fe₁₀(5 nm)/Ru(x nm)/Co₉₀Fe₁₀(3 nm)/Ru(y nm)/Co₉₀Fe₁₀(5 nm)(x=0.45,0.45,1.00; y=0.45,1.00,1.00)的系列样品,并对样品的性能及其作为钉扎层对自旋阀巨磁电阻(GMR)效应的影响进行了研究 关键词： 双合成反铁磁 自旋阀 巨磁电阻     

非线性响应对自旋阀磁电阻的影响

从非线性Kubo公式出发,考虑电子自旋相关体散射, 研究了自旋阀结构磁电阻效应.发现非线性响应在不同程度上影响巨磁阻效应.在零温附近,温度参数对磁电阻影响较小,而外加偏压对磁电阻的影响相对较大.     

具有室温巨隧道磁电阻效应与高自旋极化率的新材料

回顾了隧道磁电阻效应发展简史及其应用，报道了锌铁氧体／氧化铁二相纳米复合材料在室温具有巨磁隧道电阻效应的实验结果，该实验结果表明锌铁氧体是具有高自旋极化率的一类新材料，值得进一步开展相关的研究工作。     

IrMn基反铁磁自旋阀的巨磁电阻效应

用第一性原理方法研究了在微观尺度具有三重对称磁结构的IrMn合金的反铁磁自旋阀(AFSV)的电子输运.研究表明:基于有序L1₂相IrMn合金的Co/Cu/IrMn自旋阀的巨磁电阻(GMR)效应具有三重对称性,可以利用这一特性区分反铁磁材料的GMR与传统铁磁材料的GMR.基于无序γ相IrMn合金的IrMn(0.84 nm)/Cu(0.42 nm)/IrMn(0.42 nm)/Cu(0.42 nm)(111) AFSV的电流平行平面构型的GMR约为7.7％,大约是电流垂直平面构型的GMR(3.4％)的两倍,明显大于实验中观测到的基于共线磁结构的FeMn基AFSV的GMR. 关键词： 反铁磁自旋阀 巨磁电阻效应 非共线磁结构 电流平行平面结构     

自旋输运和巨磁电阻--自旋电子学的物理基础之一

介绍磁性纳米结构和锰氧化物中电子的自旋极化输运和巨磁电阻效应，它们是新近发展的自旋电子学的物理基础之一．着重讨论的是以下三方面的基本物理图像：磁多层结构的巨磁电阻，铁磁隧道结的隧穿磁电阻，掺杂锰氧化物的庞磁电阻效应．     

自旋阀与多层膜巨磁电阻的特性测量及比较

介绍磁性多层膜中自旋极化输运和巨磁电阻效应,简述自旋阀巨磁电阻与多层膜巨磁电阻在材料组成结构和工作原理方面的区别,利用和改造现有的高校物理实验室中的实验仪器并设计简易的实验电路测量这两种类型的巨磁电阻的磁敏特性,并根据实验测量的结果将这两种传感器在其灵敏度和测量范围上进行比较和研究.     

巨磁电阻效应及应用设计性物理实验的研究

测量巨磁电阻阻值与磁感应强度的关系,研究巨磁电阻效应特性,介绍巨磁电阻效应的物理原理、实验方法及应用,该近代物理学的研究成果,可作为大学物理实验教学内容.     

自旋角动量转移效应的实验研究

近几年来,自旋角动量转移效应引起了人们越来越多的关注。这种效应会带来所谓的新一代电流驱动磁性存储或逻辑器件,例如运用自旋角动量转移效应进行数据写入的磁随机存储器、磁纳米线跑道存储器以及电流驱动的微波发生器等等。本文简单介绍了近几年国际上在自旋角动量转移效应实验研究方面的一些重要成果。     

自旋角动量转移效应的实验研究

近几年来，自旋角动量转移效应引起了人们越来越多的关注。这种效应会带来所谓的新一代电流驱动磁性存储或逻辑器件，例如运用自旋角动量转移效应进行数据写入的磁随机存储器、磁纳米线跑道存储器以及电流驱动的微波发生器等等。本文简单介绍了近几年国际L在自旋角动量转移效应实验研究方面的一些重要成果。     

采用高分辨电镜分析Cu掺杂聚-4-甲基-1-戊烯泡沫材料采用高分辨电镜分析Cu掺杂聚-4-甲基-1-戊烯泡沫材料

利用物理掺杂的方法,制备了铜掺杂聚-4-甲基-1-戊烯(PMP)低密度泡沫材料,采用高分辨扫描电子显微镜和透射电子显微镜,分析了泡沫材料的微观结构、成分及微区成分分布。结果表明：与PMP泡沫相比,铜掺杂PMP泡沫的孔洞直径和网络骨架尺寸变大;铜颗粒镶嵌在PMP泡沫的有机骨架上且有团聚现象;泡沫材料中除碳、铜外,还残留有杂质元素氧;铜颗粒被PMP泡沫包裹,与碳网络骨架之间接触紧密。     

Graphene oxide monolayers as supporting films for high resolution transmission electron microscopy

A novel kind of TEM support composed of graphene oxide monolayers was fabricated by a facile solution-cast method. Compared to the conventional carbon supporting films, such graphene oxide film (GO-film) performed better stability under high-energy electron beams and better dispersion effect for water-soluble nanoparticles. Quantitative improvement in TEM imaging resolution for nanomaterials on such GO-films compared to the commercial ultrathin carbon films was demonstrated.     

Structural characterization of Al_(0.55)Ga_(0.45)N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy

Structural characteristics of Alo.55 Gao.45N epilayer were investigated by high resolution x-ray diffraction(HRXRD)and transmission electron microscopy(TEM);the epilayer was grown on GaN/sapphire substrates using a high-temperature A1 N interlayer by metal organic chemical vapor deposition technique.The mosaic characteristics including tilt,twist,heterogeneous strain,and correlation lengths were extracted by symmetric and asymmetric XRD rocking curves as well as reciprocal space map(RSM).According to Williamson-Hall plots,the vertical coherence length of AlGaN epilayer was calculated,which is consistent with the thickness of AlGaN layer measured by cross section TEM.Besides,the lateral coherence length was determined from RSM as well.Deducing from the tilt and twist results,the screw-type and edge-type dislocation densities are 1.0×10~8 cm~(-2) and 1.8×10~(10) cm~(-2),which agree with the results observed from TEM.     

Imaging polycrystalline and smoke MgO surfaces with atomic force microscopy: a case study of high resolution image on a polycrystalline oxide

Atomic force microscopy in contact, non-contact and in high resolution modes have been used to image MgO powder samples, obtained at different degree of sintering, starting from Mg(OH)₂ decomposition or obtained in form of smoke. From high resolution AFM images of MgO smoke, the lattice periodicity on regular surfaces has been revealed for the first time, under ambient conditions. The high surface perfection of the microcrystals has been further confirmed by HRTEM analysis. To obtain more information on the local structure of the single faces, in terms of type and distribution of the surface active sites, the adsorption of a simple probe molecule (CO) on such surfaces has been investigated by means of FTIR spectroscopy.     

High-resolution electron microscopy study of Ni81Fe19 film with Co33Cr67 buffer layer

The anisotropic magnetoresistance (AMR) in permalloy Ni₈₁Fe₁₉ film deposited on a 1.2 nm Co₃₃Cr₆₇ buffer layer was significantly enhanced. The high-resolution electron microscopy was used to study the microstructure of Ni₈₁Fe₁₉ film with and without Co₃₃Cr₆₇ buffer layer. It was found that Co₃₃Cr₆₇ buffer layer can induce good (1 1 1) texture, while without Co₃₃Cr₆₇ buffer layer, Ni₈₁Fe₁₉ film show randomly oriented grain structure. The Δρ/ρ enhancement is attributed to the decrease in the resistivity ρ of the Ni₈₁Fe₁₉ film due to the formation of the large (1 1 1) textured grains in Ni₈₁Fe₁₉ film with Co₃₃Cr₆₇ buffer layer. However, the surface roughness of substrate may limit the (1 1 1) textured grain size and induce additional grain boundaries in Ni₈₁Fe₁₉ film with Co₃₃Cr₆₇ buffer layer, limit the enhancement of the AMR effect.     

Low-energy EDX – A novel approach to study stress corrosion cracking in SUS304 stainless steel via scanning electron microscopy

Intergranular stress corrosion cracking (IGSCC) in type SUS304 stainless steels, tested under pressurized water reactor (PWR) primary water conditions, has been characterized with unprecedented spatial resolution using scanning electron microscopy (SEM) and novel low-energy (∼3 kV) energy dispersive X-ray spectroscopy (EDX). An advancement of the large area silicon drift detector (SDD) has enhanced its sensitivity for X-rays in the low-energy part of the atomic spectrum. Therefore, it was possible to operate the SEM at lower accelerating voltages in order to reduce the interaction volume of the beam with the material and achieve higher spatial resolution and better signal-to-noise ratio. In addition to studying the oxide chemistry at the surface of intergranular stress corrosion cracks, the technique has proven capable of resolving Ni enrichment ahead of some crack tips. Active cracks could be distinguished from inactive ones due to the presence of oxides in the open crack and Ni-rich regions ahead of the crack tip. Furthermore, it has been established that SCC features can be better resolved with low-energy (3 kV) than high-energy (12 kV) EDX. The low effort in sample preparation, execution and data analysis makes SEM the ideal tool for initial characterization and selection of the most important SCC features such as dominant cracks and interesting crack tips, later to be studied by transmission electron microscopy (TEM) and atom probe tomography (APT).     

A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy (MBE) in turn on a GaAs substrate. An Al_0.24Ga_0.76As chair barrier layer, which is grown adjacent to the top AlAs barrier, helps to reduce the valley current of RTD. The peak-to-valley current ratio of fabricated RTD is 4.8 and the transconductance for the 1-μm gate HEMT is 125mS/mm. A static inverter which consists of two RTDs and a HEMT is designed and fabricated. Unlike a conventional CMOS inverter, the novel inverter exhibits self-latching property.     

Studies of iron and iron oxide layers by electron spectroscopes

Thin iron oxide layers prepared “in situ” in the ultra high vacuum on polycrystalline iron substrate were investigated by electron spectroscopy methods—X-ray photoelectron spectroscopy (XPS) and elastic peak electron spectroscopy (EPES), using spectrometer ADES-400. The texture and the average grain size of the iron substrate foil have been examined by glancing angle X-ray diffraction (XRD). Qualitative and quantitative estimation of investigated oxide layers was made using (i) the relative sensitivity factor XPS method, (ii) comparison of binding energy shifts of Fe 2p photoelectron line and (iii) non-linear fitting procedure of Fe 2p photoelectron lines.Both, sputter-clean polycrystalline iron substrate and finally grown Fe_2.2O₃ layer, were investigated by the EPES method to measure the electron transport parameters used for quantitative electron spectroscopy, such as the electron inelastic mean free path (IMFP) values. The IMFPs were measured in the electron kinetic energy range 200-1000 eV with the Cu standard. The surface excitation parameters using Chen and Werner et al. approaches were evaluated and applied for correcting these IMFPs. The discrepancies between the evaluated parameters obtained using the above quantitative and qualitative approaches for characterising the iron oxide layers were discussed.     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

Recent study of nanomaterials prepared by inert gas condensation using ultra high vacuum chamber

The ultra high vacuum chamber was developed in the Department of Nuclear Physics, University of Madras with the funding from DST, India. This UHV chamber is used to prepare nanocrystalline materials by inert gas condensation technique (IGCT). Nanocrystalline materials such as PbF₂, Mn²⁺-doped PbF₂, Sn-doped In₂O₃ (ITO), ZnO, Al₂O₃, Ag₂O, CdO, CuO, ZnSe:ZnO etc., were prepared by this technique and characterized. Results of some of these materials will be presented in this paper. In solid-state²⁰⁷Pb NMR on PbF₂ a separate signal due to the presence of grain boundary has been observed. The structural phase transition pressure during the phase transformation from the cubic phase to orthorhombic phase under high pressure shows an increase with the decrease in grain size. Presence of electronic centres in nanocrystalline PbF₂ is observed from Raman studies and the same has been confirmed by photoluminescence studies. Al₂O₃ was prepared and⁵⁶Fe ions were implanted. After implantation segregation of⁵⁶Fe ions was examined by SEM. The oxidation properties of ITO were studied by HRTEM. As against the expectation of oxide coating on individual nanograins of In-Sn alloy, ITO nanograins grew into faceted nanograins on heat treatment in air and O₂ atmosphere. The growth of ITO under O₂ atmosphere showed pentagon symmetry. The PMN was initially prepared by solid-state reaction. Further, this PMN relaxor material will be used to convert into nanocrystalline PMN by IGCT with sputtering and will be studied