Proximity effect in the finite and incommensurate ferromagnet/superconductor systems

The original theory of a proximity effect is proposed for the bi- and tri-layered system ferromagnetic metal/superconductor (F/S) in dirty limit. The F₁/S/F₂ trilayer is examined more closely. The distinctions in materials, in thicknesses of F layers (d_f1 and d_f2), in parameters interfaces, and in local environments of layers are considered among the causes of incommensurability of trilayer. The peculiar T_c(d_f1, d_f2) interference pattern is predicted for the F₁/S/F₂ systems. The reentrant superconductivity and possibility of the better observability of the spin-valve regime are discussed.     

Radiation damage produced in powder of α-(methylamino)isobutyric acid, α -aminoisobutyric acid methyl ester hydrochloride and diethylmalonic acid

The electron paramagnetic resonance spectra of γ-irradiated powders of α-(methylamino)isobutyric acid – CH₃NHC(CH₃)₂COOH, α -aminoisobutyric acid methyl ester hydrochloride – NH₂(CH₃)₂CCOOCH₃ HCl, and diethylmalonic acid – (CH₃CH₂)₂C(COOH)₂ have been investigated at room temperature. It has been found that γ -irradiation produces the (CH₃)₂C˙COOH radical in the first, the (CH₃)₂C˙COOCH₃ radical in the second and the (CH₃CH₂)₂C˙COOH radical in the third compound. The spectra were computer-simulated. The g values and the hyperfine coupling constants of the unpaired electron with the environmental methyl, methylene protons and OH proton were determined. The results were found to be in good agreement with the existing literature data and theoretical predictions.     

On Mössbauer effect in polypyrrole doped with selected metal halides

The reaction of partially oxidized polypyrrole [(C₄H₃N)₄⁺Cl₋]_n with FeCl₃ and SnCl₄ leads to the insertion of only one type metal halide species namely FeCl₄⁻ and SnCl₅⁻. The reaction with stannic halide is acid-base in nature whereas the reaction with ferric chloride may be either redox or acid-base. The use of SbCl₅ results in the insertion of two non-equivalent antimony halide species: SbCl₆⁻ and SbCl₃. Much simpler Mössbauer spectra can be obtained if in the doping reactions SbCl₅ or SbF₅ are replaced by NO₂⁺SbF₆⁻. Only one type of antimony with Mössbauer parameters characteristics of SbF₆⁻ is observed in this case. The Mössbauer lattice temperatures, θ_M, calculated from the temperature dependence of the recoil free fractions are 94 K and 105 K for FeCl₃ and SnCl₄ doped polypyrrole respectively. The obtained values are within the range typically observed for other conducting polymeric systems.     

飞机跑道胶痕的自动识别系统设计与实现

为了减轻机场跑道除胶工作人员的劳动强度,提高除胶工作效率,文章提出了一种基于机器视觉的胶痕自动查找和识别方法,设计了基于ARM单片机控制的图像无线采集和基于PC机控制的图像接收、图像预处理和图像识别系统。文章通过分析预处理后的数据特点,确定了基于细胞神经网络算法的胶痕识别算法,然后在MATLAB仿真环境下确定了该算法的最优模型和参数,最后在Visual C++ 6.0环境下完成了该算法的程序编译,调试并完成了对胶痕的自动识别过程。理论仿真和程序测试的结果证明了文章提出的方法在胶痕自动识别系统中的可行性,也为机场特种设备的无人化和智能化提供了参考。     

Effects of coating parameters on the morphology of SiO2-coated TiO2 and the pigmentary properties

SiO₂-coated TiO₂ powders were prepared by the chemical deposition method starting from rutile TiO₂ and Na₂SiO₃. The SiO₂-coated TiO₂ powders were characterized by X-ray photoelectron spectroscopy, Zeta-potential analysis, Fourier transform infrared spectroscopy, and transmission electron microscopy. The evolution of island-like and uniform coating layers was found to depend upon the ratio of Na₂SiO₃ to TiO₂, reaction temperature, and pH. The whiteness and brightness of the SiO₂-coated TiO₂ powders increased in response to an increase in the SiO₂ loading, but there was a maximum value among the light scattering indexes. The SiO₂-coated TiO₂ powders possessed more negative Zeta potentials than the naked TiO₂. The dispersibility of the SiO₂-coated TiO₂ powders with the continuous and uniform SiO₂ coating layers was higher than that of the naked TiO₂ and the SiO₂-coated TiO₂ powders with the island-like SiO₂ coating layers.     

Photoelectron spectra of ethylene and of the six deuterated derivatives

The photoelectron spectra of C₂H₄ and of six deuterated molecules of ethylene — C₂D₄, C₂D₃H, C₂H₃D, cis-C₂H₂D₂, trans-C₂H₂D₂ and gem-C₂H₂D₂ — have been recorded with the 584-Å resonance line of He. The adiabatic ionization potentials of the X²B_3u and the ²B_3g states of the seven isotopic components have been determined with an accuracy of about 7 meV. The ionization potentials of the other excited electronic states have been measured with a lower accuracy owing to a less well defined onset. The measured ionization potentials of C₂H₄ are 10.514 eV, 12.431 eV, 14.4₃ eV, 15.7₄ eV and 18.7 eV. The vibrational structure of the first electronic band shows that the two normal modes ν₂ (symmetric CC stretching) and ν₃ (symmetric HCH bending) are excited simultaneously. The measured vibrational frequencies show no abnormal isotopic effect if the assignment given in the literature for the ν₂ and ν₃ modes in C₂H₄⁺ are reversed and if a stronger excitation of the ν₃ symmetric bending mode in the least deuterated compounds is assumed. The vibrational modes most strongly excited in the second and third electronic bands are ν₁ (symmetric CH stretching) and ν₃, and in the fourth band ν₃.     

Structural features of liquid metallic glass former

The structural parameters of Au₇₅Si₂₅ alloy, pure Au, Al₈₈Si₁₂, Cu₈₇Sn₁₃, In₉₈Al₂ and Al₉₃Ni₇ alloys have been measured by X-ray diffractometer. It is found that there are subpeaks in the pair correlation functions in liquid Au₇₅Si₂₅ alloy. The addition of Si in liquid Au results in a decrease in both the correlation radius and the coordination number of the nearest atomic neighbors. The Au₇₅Si₂₅ alloy nearest atomic distance has a more stable dependence on temperature compared to In₉₈Al₂, Al₉₃Ni₇ and Cu₈₇Sn₁₃ alloys. The atomic density change of liquid Au₇₅Si₂₅ alloy is less dependent on temperature than the liquid Au and Al₈₈Si₁₂ alloy. The liquid metallic good glass former Au₇₅Si₂₅ alloy possesses a more stable liquid structure than that of poor glass formers, indicating the essential of the fragility of the superheated melts.     

Defect structure of Cu2+ center in K2SO4‒Na2SO4‒ZnSO4 glasses

The spin Hamiltonian parameters (g factors g _//, g _⊥ and hyperfine structure constants A _//, A _⊥) of Cu²⁺ in K₂SO₄?Na₂SO₄?ZnSO₄ glasses are calculated from the high-order perturbation formulas of 3d⁹ ion in tetragonal octahedral sites. The calculated results are in agreement with the observed values. Since the EPR parameters are sensitive to the local structure of a paramagnetic impurity center, the defect structure of Cu²⁺ center in K₂SO₄?Na₂SO₄?ZnSO₄ glasses is estimated. The validity of results is discussed.     

Electromotive force of a COCO2 sensor in COCO2H2H2O atmospheres and simultaneous determination of partial pressures of CO and CO2

The electromotive force (EMF) of the COCO₂ sensor using Na₂CO₃ and NASICON (Na₃Zr₂Si₂PO₁₂) as solid electrolytes has been examined in COCO₂Ar atmospheres. The EMF is related to the partial pressures of CO and CO₂ and proportional to log(P²_CO2P⁻¹_CO). The simultaneous use of the oxygen sensor of stabilized zirconia gives the EMF proportional to log(P_CO2P⁻¹_CO). The EMF's of two sensors permit to determine individually partial pressures of CO and CO₂. The existence of H₂ with high concentration does not affect the EMF's. This fact proves the applicability of the two-sensor system to the monitoring and the controlling of reducing atmospheres in industrial processes.     

Variations of phase transition temperature and enthalpy in the systems Na2Mo1− x W x O4 and Na2Mo1− y S y O4

The samples in two material systems, Na₂Mo_{1? x} W _x O₄ and Na₂Mo_{1? y} S _y O₄, were prepared by using conventional solid reactions and characterized by X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDX), and difference scanning calorimetry (DSC). The XRD and EDX data indicated that all the samples in both systems were in the solid solution range. The DSC data indicated that in the system Na₂Mo_{1? x} W _x O₄, the solid–solid transition temperatures increased and in the system Na₂Mo_{1? y} S _y O₄, the solid–solid transition temperatures decreased. The total enthalpy (ΔH _total) of the solid–solid transitions in the system Na₂Mo_{1? x} W _x O₄, decreased much less than that in the system Na₂Mo_{1? y} S _y O₄. This is probably because similar to Na₂MoO₄, the solid–solid transition of Na₂WO₄ has relatively large ΔH _total, but Na₂SO₄ has much smaller solid–solid transition enthalpy. In order to modify the transition temperatures of Na₂MoO₄ and also to keep its relatively large ΔH _total, it is necessary to choose a doping material with large ΔH _total.     

Raman characterizations and structural properties of the binary TeO2?WO3, TeO2?CdF2 and ternary TeO2?CdF2?WO3 glasses

The Raman spectroscopy technique was used to characterize the microstructure and the crystallization properties of the as‐cast and heat‐treated binary TeO₂ WO₃, TeO₂ CdF₂ and ternary TeO₂ CdF₂ WO₃ glasses and glass ceramics. The results were compared with those obtained by using the X‐ray diffraction technique. The effect of the WO₃ and CdF₂ contents on the TeO₂ glass network and the intensity ratios of the deconvoluted Raman peaks were determined. The shifts in the Raman band wavenumbers and the intensity values for each band were investigated. The Raman results indicated that the glasses were mainly formed by the [TeO₄] and [TeO₃] units. The [TeO₄] units convert to [TeO₃] units with the addition of WO₃ and CdF₂ into tellurite glasses. All the crystalline phases such as α‐TeO₂, δ‐TeO₂ and γ‐TeO₂ existing in the TeO₂ WO₃, TeO₂ CdF₂ and TeO₂‐ WO₃ CdF₂ glasses were determined. The transformation of the metastable γ‐TeO₂ phase into stable α‐TeO₂ was observed for the (1 − x)TeO₂ xWO₃ (where x = 0.15, 0.20, 0.25), 0.90Te₂ 0.10CdF₂, the 0.85TeO₂ 0.10CdF₂ 0.05WO₃ and 0.80TeO₂ 0.10CdF₂ 0.10WO₃ glasses, and the transformation of the metastable δ‐TeO₂ phase into the stable α‐TeO₂ was also observed for the TeO₂ CdF₂ WO₃ glass system. In addition, an unidentified phase formation, labeled ε, was determined. Copyright © 2009 John Wiley & Sons, Ltd.     

The study of phase,microstructure, and magnetocaloric properties in LaFe11.6*xSi1.4B0.1 alloys

The effect of Fe on the phase and magnetocaloric property of LaFe_11.6*xSi_1.4B_0.1 alloys with x = 1.0–1.4 have been studied. The results show that the excess of Fe will make the α-Fe phases increase, but the easy corrosion LaFeSi phase reduces in LaFe_11.6*xSi_1.4B_0.1 alloys. All LaFe_11.6*xSi_1.4B_0.1 alloys keep the first-order magnetic phase transition. The saturation magnetizations of LaFe_11.6*xSi_1.4B_0.1 alloys with x > 1 are much higher than LaFe_11.6Si_1.4B_0.1 alloy under 2T magnetic field. This results in the maximum isothermal magnetic entropy changes, and the relative cooling power of LaFe_11.6*xSi_1.4B_0.1 alloys is bigger than for LaFe_11.6Si_1.4B_0.1 alloys.     

Ab initio electronic structure,bonding and optical properties of two relatively new ceramics Hf2Al3C4 and Hf3Al3C5: A comparative study

The structural, electronic and optical properties of the ternary carbides Hf₂Al₃C₄ and Hf₃Al₃C₅ are studied via first principles orthogonalized linear combination of atomic orbitals (OLCAO) method. Results on crystal structure, interatomic bonding, band structure, total and partial density of states (DOS), localization index (LI), effective charge (Q*), bond order (BO), dielectric function (ε), optical conductivity (σ) and electron energy loss function are presented and discussed in detail. The band structure plots show the conducting nature of Hf₂Al₃C₄ and Hf₃Al₃C₅ carbides. DOS results disclose that the total number of states at Fermi level N(E_F) are 1.89 and 2.38 states/(eV unit cell) for Hf₂Al₃C₄ and Hf₃Al₃C₅ respectively. The Q* calculations show an average charge transfer of 0.723 and 0.711 electrons from Hf and 0.809 and 0.807 electrons from Al to C sites in Hf₂Al₃C₄ and Hf₃Al₃C₅ respectively. The BO results provide the dominating role of Al–C bonds with BO value of 6.62 (BO%?=?59%) and 6.66 (BO%?=?49%) for Hf₂Al₃C₄ and Hf₃Al₃C₅ respectively and are considered responsible for the crystals cohesion. The LI results reflect the presence of highly delocalized states in the vicinity of the Fermi level. The dielectric function plots of the real (?₁(?ω)) and imaginary (?₂(?ω)) parts show the anisotropic behavior of Hf₂Al₃C₄ and Hf₃Al₃C₅. The results on optical conductivity (σ) support the trends observed in dielectric functions. The electron energy loss functions reveal the presence of sharp peaks both in ab-plane and along c-axis around 20?eV in Hf₂Al₃C₄ and Hf₃Al₃C₅ ternary carbides.     

Effect of electron irradiation on the heat capacity of [NH2(CH3)2]2 · CuCl4 in the phase transition region

The specific heat of crystalline [NH₂(CH₃)₂]₂ · CuCl₄ in the ferroelectric phase, both nonirradiated and irradiated by electrons, was measured calorimetrically. The temperature region of existence of the ferroelectric phase was shown to broaden under electron irradiation. The existence of an incommensurate phase above the Curie point T _c1 in the crystal was confirmed. The phase-transition sequence observed in [NH₂(CH₃)₂]₂ · CuCl₄ is shown to be described by a phenomenological model for A ₂ BX ₄-type ferroelectrics with an organic cation.     

Structure of Artificial Grain Boundaries in Sapphire Bicrystals with Intermediate Layers

The structure of the artificial grain boundaries in Al₂O₃ bicrystals withY₃Al₅O₁₂ and Y-stabilizedZrO₂ (Y-ZrO₂) intermediate layers was studiedwith high resolution electron microscopy, electron diffraction and energydispersive X-ray analysis. TheY₃Al₅O₁₂ intermediate layer wasfound to be polycrystalline with three different orientation relationshipsbetween the ₂O₃ and theY₃Al₅O₁₂. The structure of theY₃Al₅O₁₂/₂O₃ interfaces is described.Also₂O₃ bicrystals with an Y-ZrO₂/₂O₃/Y-ZrO₂/₂O₃/Y-ZrO₂intermediate layer, prepared at two different temperatures, werestudied.Recry stallization of the intermediate layers occurred during thesolid phase intergrowth of the ₂O₃ bicrystalsparts and only an Y-ZrO₂ layer was found as intermediatelayer. The misorientation between the consecutive Y-ZrO₂grains was less than 1.5°. Misfit dislocations and atomic height stepsdecorate the Y-ZrO₂/₂O₃interface.     

Deposition and characterization of binary Al2O3/SiO2 coating layers on the surfaces of rutile TiO2 and the pigmentary properties

Binary Al₂O₃/SiO₂-coated rutile TiO₂ composites were prepared by a liquid-phase deposition method starting from Na₂SiO₃·9H₂O and NaAlO₂. The chemical structure and morphology of binary Al₂O₃/SiO₂ coating layers were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, TG-DSC, Zeta potential, powder X-ray diffraction, and transmission electron microscopy techniques. Binary Al₂O₃/SiO₂ coating layers both in amorphous phase were formed at TiO₂ surfaces. The silica coating layers were anchored at TiO₂ surfaces via Si-O-Ti bonds and the alumina coating layers were probably anchored at the SiO₂-coated TiO₂ surfaces via Al-O-Si bonds. The formation of continuous and dense binary Al₂O₃/SiO₂ coating layers depended on the pH value of reaction solution and the alumina loading. The binary Al₂O₃/SiO₂-coated TiO₂ composites had a high dispersibility in water. The whiteness and brightness of the binary Al₂O₃/SiO₂-coated TiO₂ composites were higher than those of the naked rutile TiO₂ and the SiO₂-coated TiO₂ samples. The relative light scattering index was found to depend on the composition of coating layers.     

Tunable growth of (GaxIn1−x)2O3 nanowires by water vapor

The tunable growth of In-doped Ga₂O₃ (Ga₂O₃:In) and Ga-doped In₂O₃ (In₂O₃:Ga) nanowires (NWs) on Au-coated Si substrates was achieved by modulating the amount of water vapor in flowing Ar at 700–750 °C via carbothermal reduction of Ga₂O₃/In₂O₃ powders with a fixed weight ratio. In Ar, only the Ga₂O₃:In NWs were grown, while in wet Ar the In₂O₃:Ga NWs were synthesized instead. The Ga concentration in In₂O₃ NWs decreased with the increment of water vapor in flowing Ar. The growth of both Ga₂O₃:In and In₂O₃:Ga NWs followed the vapor–liquid–solid process. The In and Ga doping induced a redshift and a blueshift in the optical bandgaps of Ga₂O₃ NWs and In₂O₃ NWs, respectively. The growth mechanisms and optical properties of Ga₂O₃:In and In₂O₃:Ga NWs were discussed.     

Luminescence centers in thin films of yttrium oxide and yttrium-aluminum garnet activated with bismuth

Luminescence spectra and photoluminescence excitation spectra of Y₂O₃:Bi and Y₃Al₅O₁₂:Bi thin films were investigated. Luminescence was stimulated by the emission from two types of centers that were associated with the substitution of Bi³⁺ for Y³⁺ in sites of the crystal lattice of Y₂O₃ (Y₃Al₅O₁₂) with point symmetries C₂ and C_3i (D₂ and C_3i). The emission of Bi³⁺ in the site with point symmetry C_3i causes blue luminescence in both Y₂O₃:Bi and Y₃Al₅O₁₂:Bi films with maxima at 3.03 eV and 3.15 eV, respectively, that is related to the ³P₁-¹S₀ transition. The emission of Bi³⁺ in the site with point symmetry C₂ gives green luminescence in Y₂O₃:Bi with the maximum at 2.40 eV that is also related to the ³P₁-¹S₀ transition. The emission of Bi³⁺ in the site with point symmetry D₂ leads to ultraviolet luminescence in Y₃Al₅O₁₂:Bi with the maximum at 3.75 eV that corresponds to the ³P₁-¹S₀ transition. The red luminescence band with the maximum at 1.85 eV in Y₂O₃:Bi is due to the presence of structural defects. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 2, pp. 202–207, March–April, 2008.     

Zirconia based oxide ion conductors for solid oxide fuel cells

The electrical conductivity in the ZrO₂-Ln₂O₃ and ZrO₂-MO₂-Ln₂O₃(M = Hf, Ce, Ln = lanthanides) systems has been examined.The highest conductivity of 0.3 S/cm at 1000 °C was found in the ZrO₂-Sc₂O₃ system. The addition of MO₂ into the ZrO₂-Ln₂O₃(Ln = Sc, Y, Yb) systems showed the conductivity decreasing. The conduction mechanism in the zirconia based oxide ion conductors was discussed in view of the dopant ionic radius. The aging effect of the conductivity in the ZrO₂-Ln₂O₃ systems has been measured in a temperature rang 800–1000 °C. ZrO₂ with a high content of Ln₂O₃ showed no significant conductivity degradation. Paper presented at the 97th Xiangshan Science Conference on New Solid State Fuel Cells, Xiangshan, Beijing, China, June 14–17, 1998.     

Ga30Sb70/Sb80Te20纳米复合多层薄膜的相变特性研究

采用磁控二靶(Ga₃₀Sb₇₀和Sb₈₀Te₂₀)交替溅射方法制备了新型Ga₃₀Sb₇₀/Sb₈₀Te₂₀纳米复合多层薄膜, 对多层薄膜周期中Ga₃₀Sb₇₀层厚度对相变特性的影响进行了研究. 结果表明, 多层薄膜的结晶温度可以通过周期中Ga₃₀Sb₇₀层厚度进行调节, 且随着Ga₃₀Sb₇₀层厚度的增加而升高. Ga₃₀Sb₇₀/Sb₈₀Te₂₀纳米复合多层薄膜的光学带隙随Ga₃₀Sb₇₀层厚度的增加而增大. 采用皮秒激光脉冲抽运光探测技术研究了多层薄膜的瞬态结晶动力学过程, 利用不同能量密度的皮秒激光脉冲可以实现Ga₃₀Sb₇₀/Sb₈₀Te₂₀多层薄膜非晶态和晶态的可逆转变.