高速调制响应垂直腔面发射激光器中的微腔效应

应用微腔物理和量子阱物理，计算了量子阱垂直腔面发射激光器的自发发射谱和自发发射寿命，通过对半导体激光器传输函数的研究，发现缩短自发发射寿命是垂直腔面发射激光器实现高速调制响应的主要原因.     

语音信号调制的微腔半导体激光器的抗噪音性能

假定微腔半导体激光器输入调制信号为实际语音信号,伴随语音信号的噪音为加性白噪音,在小信号近似下,得到了电流调制和自发发射寿命调制下激光器的传递函数;在大信噪比的前提下,对激光器进行了频域分析,得到了不同参量下的信噪比增益.数值模拟结果表明,在偏置电流的变化范围内,存在极低信噪比增益区,大自发发射因子、小自发发射寿命有利于使该区变窄;语音信号的通带范围和功率谱密度分布特征参量的适当选取,可以使激光器的抗噪音性能在偏置电流的某段范围内得以提高.     

相干谐波辐射的测量方法和系统

 研究了光学速调管自发辐射谱,其调制率已达0.80,即将进行相干谐波辐射实验。介绍了相干谐波辐射实验的主要考虑因素、相干增强因子的测量方法和测量系统以及种子激光与电子束的准直和同步。     

相位调制边带失衡问题研究

 高功率激光系统中一般利用相位调制器对单纵模激光进行频谱展宽以避免受激布里渊散射，当后继系统中的滤波器存在中心波长偏差时，则会导致相位调制产生的边带失衡，使光信号出现较为严重的高频起伏。基于前端系统模拟平台对此问题进行了数值模拟研究，结果表明滤波后的高频起伏随滤波器带宽变窄和中心波长偏差增大而加剧。分析表明0.2 nm带宽的滤波器出现0.05 nm左右的波长偏差时，将引起24.3%左右的顶部起伏。实验中根据分析将滤波器带宽从0.2 nm加大到0.4 nm，成功将脉冲顶部起伏从25.2%减小到了4.4%，对前端系统的研制起到了很好的指导作用。     

加深光学速调管自发辐射谱调制的研究

相干谐波储存环自由电子激光的相干增强因子正比于光学速调管自发辐射谱调制率的平方,加深光学速调管自发辐射谱的调制是相干谐波储存环自由电子激光研究的重要一环.介绍在中国科学技术大学800MeV电子储存环上所进行的加深光学速调管自发辐射谱调制的研究工作,调制率已从0.236提高到了0.80,为相干谐波产生实验奠定了基础.     

Spontaneous emission coupling factors in planar micro-cavity lasers with distributed Bragg reflectors

In this article, a considerable value of spontaneous emission factor is estimated based on the spontaneous emission radiation patterns in micro-cavity lasers. After the spontaneous emission for a dipole in the micro-cavity is studied, the confinements of vacuum fields and electrons are considered together for a quantum well in the micro-cavity laser. The TE mode and TM mode spontaneous emission spectra are presented for a single quantum well embedded in a planar micro-cavity laser at 300 K. The results show that the TE mode spontaneous emission spectrum is enhanced, whereas the TM mode spontaneous emission is suppressed greatly. The maximum values obtained for the spontaneous emission coupling factors are 0.2 and 0.0055 for a dipole and a quantum well planar micro-cavity laser with distributed Bragg reflectors, respectively.     

Modification of the spontaneous emission of quantum dots near the surface of a three-dimensional colloidal photonic crystal

This paper demonstrates experimentally and numerically that a significant modification of spontaneous emission rate can be achieved near the surface of a three-dimensional photonic crystal.In experiments,semiconductor core-shell quantum dots are intentionally confined in a thin polymer film on which a three-dimensional colloidal photonic crystal is fabricated.The spontaneous emission rate of quantum dots is characterised by conventional and time-resolved photoluminescence (PL) measurements.The modification of the spontaneous emission rate,which is reflected in the change of spectral shape and PL lifetime,is clearly observed.While an obvious increase in the PL lifetime is found at most wavelengths in the band gap,a significant reduction in the PL lifetime by one order of magnitude is observed at the short-wavelength band edge.Numerical simulation reveals a periodic modulation of spontaneous emission rate with decreasing modulation strength when an emitter is moved away from the surface of the photonic crystal.It is supported by the fact that the modification of spontaneous emission rate is not pronounced for quantum dots distributed in a thick polymer film where both enhancement and suppression are present simultaneously.This finding provides a simple and effective way for improving the performance of light emitting devices.     

Amplitude noise enhancement caused by nonlinear interaction of spontaneous emission field in laser diodes

The amplitude noise spectrum of the total laser output of a nearly single-mode laser diode is enhanced at low frequencies due to the nonlinear interaction between the spontaneous photons and the coherent laser field. This enhancement strongly depends on the spontaneous emission rate, resulting in a dependence of the amplitude noise spectral shape on the spontaneous emission rate. A linearized analytical model which predicts that the amplitude noise spectral shape is independent of the spontaneous emission rate is inadequate. The experimental data are consistent with a numerical simulation of the full nonlinear model.     

Spontaneous-emission spectrum of the nonlasing supermodes in semiconductor laser arrays

It is shown that the interference between amplified spontaneous emission into the nonlasing supermode and the laser field of a semiconductor laser array causes spatial hole burning, which couples the dynamics of the amplified spontaneous emission with the laser field. In particular, phase locking between the amplified spontaneous emission and the lasing mode leads to the formation of a spectral triplet composed of in-phase relaxation oscillation sidebands and an out-of-phase line at the lasing frequency.     

损耗调制CO_2激光脉冲的噪声特性

由于自发辐射噪声的涨落,ＣＯ２激光器的脉冲峰值强度与时间延迟密切相关。理论和实验研究发现,对于典型的Ｂ类ＣＯ２激光器,在损耗调制情况下,当脉冲峰值出现在最低腔损耗ｔ０之前时,初始自发辐射噪声越大,相对于阈值点的第一个渡跃时间ｔＦＰ越小,对应的峰值强度越小;当脉冲峰值出现在最低腔损耗ｔ０之后时,初始自发辐射噪声越大,相对于阈值点的第一个渡跃时间ｔＦＰ越小,对应的峰值强度则越大。     

损耗调制CO2激光脉冲的噪声特性

由于自发辐射噪声的涨落,CO2激光器的脉冲峰值强度与时间延迟密切相关。理论和实验研究发现,对于典型的B类CO2激光器．在损耗调制情况下,当脉冲峰值出现在最低腔损耗to之前时,初始自发辐射噪声越大,相对于阈值点的第一个渡跃时间tFP越小,对应的峰值强度越小;当脉冲峰值出现在最低腔损耗to之后时,初始自发辐射噪声越大,相对于阈值点的第一个渡跃时间tFP越小,对应的峰值强度则越大。     

Spontaneous and induced modulation instability in the presence of broadband spectra caused by the amplified spontaneous emission

Spontaneous and induced modulation instability (MI) in the presence of rather broadband spectra are shown in the conventional single-mode fiber (SMF) for the first time. The broadband spectra are caused by the amplified spontaneous emission (ASE) of the erbium-doped fiber amplifiers (EDFAs). The two kinds of MI are seeded by noise components and a probe beam which results from two EDFAs amplification, respectively. For the spontaneous MI, the MI threshold is shown to be ??170 mW, which contains the laser as well as the ASE component. For the induced MI, an idler beam appears and grows with the peak power of input pulses at first, and then multiple spectral peaks emerge.     

微腔半导体激光器的两种新调制方法

本文提出微腔半导体激光器的两种新调制方法:自发发射寿命调制和光子寿命调制。小信号近似分析的数值模拟结果表明,这两种调制方法的调制带宽大于同参数下的电流调制的带宽。     

The rotation of the polarization plane of quantum-well heterolasers emission under the ultrasonic strain

The paper is devoted to an acousto-electron effect in the nanodimensional laser heterostructures. The effect results in a modulation of the laser emission intensity as well as in a turn of the emission polarization by the sound strain. Theoretical treatment of the experimental data is presented.     

Structure of the 534.1 nm manganese laser line

The structure of the 534.1 nm manganese laser line and its temporal evolution emitted from a Mn/MnCl₂ vapor laser were measured and compared with the calculated atomic linshape of spontaneous emission. A brief interpretation of the laser line-shape has been suggested. It is found that the monochromaticity of the 534.1 nm line can be improved from the choice of the reservoir temperature and buffer gas pressure. The sequence of appearance of these peaks of the laser lineshape is governed by the intensity of the hyperfine components of the spontaneous emission.     

Controlling spontaneous emission and threshold-less laser oscillation with optical microcavities

We describe the alteration of spontaneous emission of materials in optical microcavities having dimensions on the order of the emitted wavelength. Particular attention is paid to one-dimensional optical confinement structures with pairs of planar reflectors (planar microcavities). The presence of the cavity causes great modifications in the emission spectrum and spatial emission intensity distribution accompanied by changes in the spontaneous emission lifetime. Experimental results are shown for planar microcavities containing GaAs quantum wells or organic dye-embedded Langmuir-Brodgett films as light emitting layers. Also discussed are the laser oscillation properties of microcavities. A remarkable increase in the spontaneous emission coupling into the laser oscillation mode is expected in microcavity lasers. A rate equation analysis shows that increasing the coupling of spontaneous emission into the cavity mode causes the disappearance of the lasing threshold in the input-output curve. Experimentally verification is presented using planar optical microcavities confining an organic dye solution. The coupling ratio of spontaneous emission into a laser mode increases to be as large as 0.2 for a cavity having a half wavelength distance between a pair of mirrors. At this point, the threshold becomes quite fuzzy. Differences between the spontaneous emission dominant regime and the stimulated emission dominant regime are examined with emission spectra and emission lifetime analyses.     

多光子过程和自发辐射对激光诱导自电离的影响

利用反作用算符的方法,研究了一个单模激光场将原子从束缚能级激发到自电离能级的过程中,双光子过程和自发辐射过程的影响。研究结果表明:自发辐射对这种光电离过程的影响一般情况下是很小的,但光子能谱特性十分明确地表明,辐射主要来源于由态共振加强的喇曼过程;并显示了激光诱导自电离过程中的缀饰(Dressed)原子图像;双光子过程将使光电子能谱和光诱导自电离过程变得非常复杂,单光子和双光子过程所产生的光电子能谱,都具有多极大值结构。     

由半导体激光器端面输出谱确定自发辐射谱

利用射线法和平均载流子分布近似，从理论上预言了用阈值以下半导体激光器的端面输出谱来确定自发辐射谱的可能性。在此基础上，通过实验测得的阈值以下半导体激光器的端面输出谱确定了自发辐射谱，并且对自发辐射谱和增益谱进行了比较和分析。     

Vertex correction effects on nonlinear optical response

The effects of vertex corrections due to frequency modulation are exactly evaluated on the emission spectra from the two-level electronic system pumped by the laser of arbitrary intensity and the absorption spectra of the weak probe field of this system. Here the frequency modulation is assumed to obey the Gaussian-Markoffian process. The two-time correlation function of the polarizations which describe the emission and absorption spectra is represented as the product of two propagators and a vertex correction. This correction is described in the form of the summation of the products of the matrix continued fractions. This correction is numerically demonstrated to be quite large for the emission spectrum in the case of the slow or strong frequency modulation and weak laser field, and for the absorption spectrum in the case of intermediate modulation and laser intensity.