Compositional dependence of the optical properties of amorphous semiconducting glass Ge10AsxSe(90−x) thin films

Optical properties of ternary chalcognide amorphous Ge₁₀As_xSe_(90−x) (with 10?x?25 at%) thin films prepared by thermal evaporation have been measured in visible and near-infrared spectral region. The straightforward analysis proposed by Swanepoel has been successfully employed, and it has allowed us to determine the average thickness , and the refractive index, n, of the films, with high accuracy. The refractive index, n and the average thickness has been determined from the upper and lower envelopes of the transmission spectra measured at normal incidence, in the spectral range 400-2500 nm. The absorption coefficient α, and therefore extinction coefficient k, have been determined from the transmission spectra in the strong-absorption region. The dispersion of the refractive index is discussed in terms of the single oscillator Wemple-DiDomenico model, and the optical absorption edge is described using the ‘nondirect transition’ model proposed by Tauc. Likewise, the optical energy gap is derived from Tauc's extrapolation. The relationship between the optical gap and chemical composition in Ge₁₀As_xSe_(90−x) amorphous system is discussed in terms of the average heat of atomization H_s and average coordination number N_c. Finally, the chemical bond approach has been also applied successfully to interpret the decrease of the glass optical gap with increasing As content.     

Temperature dependence of electrical resistivity for Ca-doped perovskite-type Y1−xCaxCoO3 prepared by sol-gel process

The temperature dependences of DC electrical resistivity for perovskite-type oxides Y_1−xCa_xCoO₃ (0?x?0.1), prepared by sol-gel process, were investigated in the temperature range from 20 K up to 305 K. The results indicated that with increase of doping content of Ca the resistivity of Y_1−xCa_xCoO₃ decreased remarkably, which was found to be caused mainly by increase of carrier (hole) concentration. In the whole temperature range investigated the temperature dependence of resistivity ρ(T) for the un-doped (x=0) sample decreased exponentially with decreasing temperature (i.e. ln ρ∝1/T), with a conduction activation energy ; the resisitivity of lightly doped oxide (x=0.01) possessed a similar temperature behavior but has a reduced E_a (0.155 eV). Moreover, experiments showed that the relationship ln ρ∝1/T existed only in high-temperature regime for the heavily doped samples (T?82 and ∼89 K for x=0.05 and 0.1, respectively); at low temperatures Mott's ln ρ∝T^−1/4 law was observed, indicating that heavy doping produced strong random potential, which led to formation of considerable localized states. By fitting of the experimental data to Mott's T^−1/4 law, we estimated the density of localized states N(E_F) at the Fermi level, which was found to increase with increasing doping content.     

Ac magnetotransport in La0.7Sr0.3Mn0.95Fe0.05O3 at low dc magnetic fields

We report the ac electrical response of La_0.7Sr_0.3Mn_1−xFe_xO₃(x=0.05) as a function of temperature, magnetic field (H) and frequency of radio frequency (rf) current (). The ac impedance (Z) was measured while rf current directly passes through the sample as well as in a coil surrounding the sample. It is found that with increasing frequency of the rf current, Z(T) shows an abrupt increase accompanied by a peak at the ferromagnetic Curie temperature. The peak decreases in magnitude and shifts down with increasing value of H. We find a magnetoimpedance of for at around room temperature when the rf current flows directly through the sample and when the rf current flows through a coil surrounding the sample. It is suggested that the magnetoimpedance observed is a consequence of suppression of transverse permeability which enhances skin depth for current flow. Our results indicate that the magnetic field control of high frequency impedance of manganites is more useful than direct current magnetoresistance for low-field applications.     

Oxygen vacancy doping effect on the electrical and magnetic behavior of Ba5−xLaxNb4−xTixO15

We report electric and magnetic properties of oxygen deficient Ba_5−xLa_xNb_4−xTi_xO_15−δ phases, which have been prepared by solid-state reaction method followed by a controlled reduction process under hydrogen atmosphere. The extra electrons added by the formation of the oxygen vacancies (δ) introduce localized spins and the magnetic susceptibility can be described by a temperature-independent contribution and a Curie-Weiss term associated to the Ti³⁺ ion formation. Besides, the experimental resistivity (ρ) data of these four reduced compounds are well described in a wide temperature range with the equation , which suggests the presence of small polarons in the system. Although, all samples present electrical insulating behavior, the electrical resistivity decreases four orders of magnitude for intermediate x values. We interpreted this fact as a consequence of the mix between the localized bands of the Nb and Ti ions, which favors the promotion of carriers due to reduction of the band gap.     

Low-temperature measurements of magnetic susceptibility and specific heat of Eu2Ti2O7—An XY pyrochlore

Magnetic susceptibility obtained from magnetization measurement (for fields H=0.1 and 1.0 T) of polycrystalline Eu₂Ti₂O₇ shows two distinct features. Firstly, increases on cooling below 300 K and attains a temperature-independent constant value at 68 K (T_max). Secondly, shows an antiferromagnetic increase below 4.9±0.1 K. The former behavior is explained by crystal field (CF) theory. CF levels and wave functions of ground and excited states are determined accurately from analyses of and earlier reported Mössbauer and optical spectra. Analysis of vs. 1/T curve at low temperatures gives the classical nearest-neighbor exchange interaction J^cl=−0.76 K and a weak dipolar interaction D_nn=0.0056 K. C_P of polycrystalline sample of Eu₂Ti₂O₇ and Y₂Ti₂O₇ are measured between 1.8-35 and 1.8-120 K respectively and θ_D vs. T (K) curves are calculated. At 4 K, θ_D of Eu₂Ti₂O₇ shows a kink and dC_P/dT curve show a maximum. Optical results show energy exchange between Eu³⁺ ions at intrinsic and extrinsic (defect) sites via super-exchange interaction at low temperature which may account for the observed anomalous behavior of and C_P.     

TiO2-nonstoichiometry dependence on piezoelectric properties and depolarization temperature of (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06Ti_xO_1+2x lead-free piezoceramics with x varying from 0.97 to 1.03 were fabricated and characterized in order to investigate the effects of TiO₂-nonstoichiometry on the piezoelectric properties and depolarization temperature of (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ composition. X-ray diffraction (XRD) analysis showed that all samples have a single phase of perovskite structure with rhombohedral symmetry. Piezoelectric and dielectric measurements revealed that deficiency of TiO₂ leads to an increase in the piezoelectric coefficient (d₃₃), free relative permittivity (), and loss tangent (tan δ) besides an increase in the electromechanical coupling coefficient (k_p) within a certain amount, while excess of TiO₂ results in a decrease in k_p, d₃₃, and , but an increase in tan δ. Depolarization temperature (T_d) measurement indicated a decrease and an increase in T_d as a result of increasing TiO₂ deficiency and TiO₂ excess, respectively. This TiO₂-nonstoichiometry also induced changes in the remanent polarization (P_r) and coercive field (E_c) of the ceramics.     

The Hall-Lorenz number in the La1.855Sr0.145CuO4 single crystal

The temperature dependence of the Hall-Lorenz number () for the optimally doped La_1.855Sr_0.145CuO₄ (LSCO) has been obtained from the experimentally determined transverse and longitudinal transport coefficients. A comparison between L_xy(T) dependence found for LSCO and L_xy(T) reported previously for copper indicates that the Hall-Lorenz number in LSCO follows standard metallic behavior from room temperature down to . Below this temperature the L_xy coefficient deviates from regular metallic dependence in a way characteristic of an electronic system with lowered density of electronic states at the Fermi level. We present results of calculations provided in terms of the Boltzmann equation for a two-dimensional model of the electronic structure with a d-symmetrical pseudogap. A temperature T_max, where a maximum in the L_xy(T) dependence appears, turns out to be dependent on the width of the supposed pseudogap . The best agreement between the model and the experimental data was obtained for , which corresponds well with values reported previously by other groups.     

Quantum critical behaviour in doped Y bB12 studied by ab initio calculations

The Kondo insulator Y bB₁₂ is known to undergo a transition to the metallic state with doping or under an external magnetic field. Within the virtual crystal approximation (VCA), we calculated the occupation of the Yb 4f and 5d shells, and , as a function of doping of Y bB₁₂ with the rare earths Tm and Lu. We found that exhibits an anomalous change at the critical concentration of the dopant, in agreement with experiment ( for Y b_1−xLu_xB₁₂ and for Y b_1−xTm_xB₁₂). We suggest that the critical behaviour seems to be strictly connected with the change of and in consequence the change of the Yb valency.     

Structural and magnetic ordering in the VxNb1+yS2 system

The influence of composition on the structural ordering and magnetism in the V_xNb_1+yS₂ system has been investigated by X-ray diffraction and magnetic measurements. Stoichiometric V_1/3NbS₂ did not exhibit the structural ordering of vanadium between the NbS₂ layers. In the ordered structure, the vanadium composition deviated from the ideal value of to both higher and lower values, while the niobium composition was in the range of 0.05?y?0.18. Excess niobium, y>0, is thought to play an essential role in the structural ordering in this system. For samples with excess niobium and ordered structures, a magnetic transition was observed at 20-50 K, depending on the composition. The spontaneous magnetization of 3-5×10⁻³ μ_B/V atom is thought to be intrinsic to this system. The magnetization curves consisted of a constant and a proportional parts of the magnetic field, which correspond to the spontaneous magnetization and high-field susceptibility, respectively. The magnetization curves and the temperature dependencies of the high-field susceptibility were quite similar to those of the canted antiferromagnetic NiS₂. A correlation between the structural and magnetic ordering is suggested.     

Physical properties of BaMg1/3Nb2/3O3-BaCo1/3Nb2/3O3 solid solutions

Structural, electric and magnetic properties of Ba₃Mg_1−xCo_xNb₂O₉ based dielectric ceramic compounds have been studied. The samples, prepared by a solid state reaction method, were characterised by X-ray powder diffraction (XRPD), electron microscopy (SEM), dielectric (ε(T)) and magnetic measurements (χ⁻¹(T)). The XRPD analyses showed that the crystal structure of these compounds does change by the increase of substitution degree, passing from a superstructure hexagonal-type, (no. 164), space group (SG) to a simple structure cubic-type, (no. 221), SG. However, the evolution of the elementary unit cell lattice parameter can be followed and it exhibit a linear increasing tendency with increase in the substitution, indicating the existence of a solid solution through out the investigated range of substitution (0-1). The microstructure analysis shows a variation in the grain size and also the porosity of the samples with the degree of substitution. The results are in good agreement with that of dielectric measurements, which also showed that the dielectric constant (ε) increases with the increase of cobalt content. The magnetic characterization of cobalt substituted samples showed an antiferromagnetic type super-exchange interaction between these magnetic ions. At the same time, the values of effective magnetic momentum (μ_eff) are close to the value that corresponds to Co²⁺ free ions. The study highlights the possibility of modelling these materials by substitutions, in order to improve properties of negative-positive-zero (NPO) type dielectric applications.     

Surface defect states of CdTexS1 − x quantum dots

Properties of surface defect states of CdTe_xS_1 − x quantum dots with an average diameter of 7 nm are investigated experimentally. The stoichiometric ratio is found to be for by use of the energy dispersive analysis of x-ray. The photoluminescence spectrum, the photoluminescence excitation spectrum, and the surface passivation are adopted to characterize the properties of surface defect states. The energy levels of surface defect states of CdTe_xS_1 − x quantum dots are also determined.     

Physicochemical, structural and fluorescence properties of Er-doped Ge-S-Ga glasses

Erbium-doped (GeS₂)_x(Ga₂S₃)_100−x (x=75, 80, 85, 90 mol%) glasses have been characterized by some basic parameters, which are important from a practical point of view. The influence of Er by introduction of 0.3, 0.6, and 0.9 mol% Er₂S₃ on the properties has been studied. The glasses have relatively high glass transition temperatures and high thermal stability, the maximal being at x=80 (the difference between the crystallization and glass transition temperatures has been found to be 150 °C. The values of Vickers microhardness and density increase with increasing GeS₂ content, slightly depending on the presence of the Er³⁺ ions. The distribution and changes of the structural units, caused by addition of Ga₂S₃ and Er₂S₃ to GeS₂, have been specified by the Raman scattering in the range 50-550 cm⁻¹. The intensity dependence of the luminescence on glass composition has been evaluated. The glasses have shown a good chemical durability and their resistance to the moisture is relatively high. The obtained results have supported possible applications of these glasses in rare-earth doped devices.     

Optical phonon modes and structure of ZnGa2Se4 and ZnGa2S4

We present the infrared and Raman study of the optical phonon modes of the defective compounds ZnGa₂Se₄ and ZnGa₂S₄. Most of the compounds have been found to crystallize in the thiogallate structure (defect chalcopyrite) with space group where all cations and vacancies are ordered. For some Zinc compounds a partially disordered cationic sublattice with various degrees of cation and vacancy statistical distribution, which lead to the higher symmetry (defect stannite), has been reported. For ZnGa₂Se₄ we have found three modes of A symmetry, showing Raman activity only. In addition, we have observed each five modes of B and E symmetry, showing infrared as well as Raman activity. The number of modes and their symmetry assignment, based on polarized measurements, clearly indicate space group for the investigated crystals of ZnGa₂Se₄.Regarding ZnGa₂S₄ we have found three modes exclusively showing Raman activity (2A⊕1B₁), and only eight modes showing infrared as well as Raman activity (3B₂⊕5E). The assignment of the modes has been derived by analyzing the spectral positions of the vibrational modes in comparison to a number of compounds. From the number and symmetry assignment of the optical phonon modes we confirm that ZnGa₂S₄ most likely crystallizes in space group .     

Dielectric spectroscopy on Bi3Zn2Sb3O14 ceramic: an approach based on the complex impedance

The dielectric properties and loss of Bi_1.5ZnSb_1.5O₇ a poor-semiconducting ceramic were investigated by impedance spectroscopy, in the frequency range from 5 Hz to 13 MHz. Electric measurements were performed from 100 to 700 °C. Pyrochlore type phase was synthesized by the polymeric precursor method. Dense ceramic with 97% of the theoretical density was prepared by sintering via constant heating rate. The dielectric permittivity dependence as a function of frequency and temperature showed a strong dispersion at frequency lower than 10 kHz. The losses exhibit slight dependence with the frequency at low temperatures presenting a strong increase at temperatures higher than 400 °C. A decrease of the loss magnitude occurs with increasing frequency. Relaxation times were extracted using the dielectric functions Z″(ω) and M″(ω). The plots of the relaxation times τ_Z′ and τ_M″ as a function of temperature follow the Arrhenius law, where a single slope is observed with activation energy values equal to 1.38 and 1.37 eV, respectively.     

Optical properties of the iron-chalcogenide superconductor FeTe0.55Se0.45

The complex optical properties of the iron-chalcogenide superconductor FeTe_0.55Se_0.45 with T_c=14 K have been examined over a wide frequency range for light polarized in the Fe-Te(Se) planes above and below T_c. At room temperature the optical response may be described by a weakly interacting Fermi liquid; however, just above T_c this picture breaks down and the scattering rate takes on a linear frequency dependence. Below T_c there is evidence for two gap features in the optical conductivity at and . Less than 20% of the free carriers collapse into the condensate for T?T_c, and this material is observed to fall on the universal scaling line for a BCS dirty-limit superconductor in the weak-coupling limit.     

Spin-glass behavior and magnetocaloric effect in melt-spun TbCuAl alloys

Magnetic properties and magnetocaloric effects of amorphous and crystalline TbCuAl ribbons are investigated by measuring their ac susceptibilities including a nonlinear term and dc magnetizations. The in-phase third harmonic ac susceptibility is found to be negative. It can be well fitted by the expression at high temperatures, indicating a spin-glass behavior in amorphous TbCuAl alloy. ΔT_f(ω)/[T_f(ω)Δlog₁₀ω], a possible distinguishing criterion to judge the presence of a spin-glass behavior is ∼0.011. The frequency-dependent data can be well fitted by the conventional critical slowing down law and the spin-glass transition temperature is obtained to be 20.1 K. The maximum of magnetic entropy change reaches 4.5 J kg⁻¹ K⁻¹ for a field change of 0-50 000 Oe, while the crystalline TbCuAl compound experiences a simple ferromagnetic-to-paramagnetic phase transition. The peak value of magnetic entropy change is obtained at the Curie temperature and reaches 14.4 J kg⁻¹ K⁻¹ for the same field change, which is much larger than that of amorphous TbCuAl alloy.     

Low-field magnetic properties of LaMnO3+δ with 0.065≤δ≤0.154

In a weak magnetic field LaMnO_3+δ exhibits at δ=0.065 below the paramagnetic-to-ferromagnetic (FM) Curie temperature, T_C, a mixed (spin-glass and FM) phase followed by a frustrated FM phase at δ between 0.100 and 0.154. The same behavior is observed in La_1−xCa_xMnO₃ with x between 0 and 0.3. This can be understood by the similar variation of the Mn⁴⁺ concentration, c between ≈0.13 and 0.34, in both materials when x or δ is increased. On the other hand, considerable differences are found between these compounds in the values of the magnetic irreversibility, in the dependencies of T_C(c) and the magnetic susceptibility, χ(c), as well as in the critical behavior of χ(T) near T_C. These differences can be explained by distortions of the cubic perovskite structure, by the reduced lattice disorder and by the more homogeneous hole distribution in LaMnO_3+δ than in La_1−xCa_xMnO₃.