Chemical pressure effect in CeFeAs1−xPxO0.95F0.05

We investigate the chemical pressure effect due to P doping in the CeFeAs_1−xP_xO_0.95F_0.05(0≤x≤0.4) system. The compound CeFeAsO_0.95F_0.05 without P doping is on the boundary between antiferromagnet (AFM) and superconductor. The AFM order of Ce³⁺ local moments causes a significant reentrance behavior in both resistivity and magnetic susceptibility. Upon P doping, T_c increases and reaches a maximum of 21.3 K at x=0.15, and then it is suppressed to lower temperatures. Meanwhile, the AFM order of Ce³⁺ ions remains nearly the same in the whole doping range (0≤x≤0.4). Our experimental results suggest a competition between superconductivity and Kondo effect in the Ce 1111 system.     

Electrical conductivity of (Er,U)O2+x and (Ce,U)O2+x

The electrical conductivity (σ) of (Er_yU_1−y)O_2+x (y=0.06, 0.20) and (Ce_yU_1−y)O_2+x (y=0.05, 0.15, 0.25) has been measured as a function of oxygen partial pressure in the temperature range of 1100≤T/°C≤1300 by a d.c. 4-probe method. Both of the oxides exhibited Po₂-regions where the electrical conductivity is independent of oxygen partial pressure, which indicates that doped Er and Ce exist as trivalent cations on uranium sites and fix the hole concentration by acting as electron acceptors, i.e. [h]=[Er′_U] and [h]=[Ce′_U], respectively. It is considered that strong oxidization tendency of uranium and reduction tendency of cerium simultaneously render the cerium ions exist exclusively as Ce³⁺ in the uranium dioxide. The electron-hole mobility of (Er_yU_1−y)O_2+x and (Ce_yU_1−y)O_2+x in the Po₂ region where σ is constant has been calculated by the combination of the electrical conductivity and charge carrier concentration; the activation energy (E_H) of each oxide has been obtained from the temperature dependence of the mobility. Small polaron hopping conduction mechanism was confirmed by small magnitude of the mobility (0.018-0.052 cm² V⁻¹ s⁻¹) and the activation energy (0.12-0.22 eV).     

Preparation, structure and oxide ion conductivity in Ce6−xYxMoO15−δ (x=0.1-1.4) solid solutions

The Ce_6−xY_xMoO_15−δ solid solution with fluorite-related structure have been characterized by differential thermal analysis/thermogravimetry (DTA/TG), X-ray diffraction (XRD), IR, Raman, scanning electric microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) methods. The electric conductivity of samples is investigated by Ac impedance spectroscopy. An essentially pure oxide-ion conductivity of the oxygen-deficiency was observed in pure argon, oxygen and air. The highest oxygen-ion conductivity was found in Ce_5.5Y_0.5MoO_15−δ ranging from 5.9×10⁻⁵ (S cm⁻¹) at 300 °C to 1.3×10⁻² (S cm⁻¹) at 650 °C, respectively. The oxide-ion conductivities remained stable over 80 h-long test at 800 °C. These properties suggested that significant oxide-ionic conductivity exists in these materials at moderately elevated temperatures.     

Reactivity and XAFS study on (1−x)CeO2-xNiO (x=0.025-0.3) system in the two-step water-splitting reaction for solar H2 production

The redox reaction of Ce⁴⁺-Ce³⁺ promoted by the catalytic function of nickel ions in a (1−x)CeO₂-xNiO solid solution was investigated for solar H₂ production by the two-step water-splitting reaction. By irradiation using an infrared imaging lamp as a solar simulator, the O₂-releasing reaction with (1−x)CeO₂-xNiO solid solution proceeded at 1673-1873 K, and its reduced form was produced. The amounts of H₂ gas evolved by the reduced form were 1.2-2.5 cm³/g and the evolved gases amounts ratio of H₂/O₂ was nearly 2, which is equal to the stoichiometric value of the water-splitting reaction (H₂O=H₂+1/2O₂). The maximum amounts of evolved H₂ and O₂ gases were obtained at the Ce:Ni mole ratio of 0.95:0.05 (x=0.05) in the (1−x)CeO₂-xNiO system. The X-ray absorption fine structure (XAFS) measurement showed that the O₂-releasing and H₂-generation reactions with (1−x)CeO₂-xNiO solid solution were repeatable with the redox system of Ce⁴⁺-Ce³⁺, which was enhanced by the catalytic function of Ni²⁺-Ni⁰.     

High temperature thermoelectric properties of Nb-doped ZnO ceramics

Solid-state reaction processing technique was used to prepare Zn_xNb_1−xO (0≤x≤0.02) polycrystalline bulk samples. In the present study, we find that their lattice parameters a and c tend to decrease with increasing amount of Nb additive. The electrical conductivity of all the Zn_1−xNb_xO samples increased with increasing temperature, indicating a semiconducting behavior in the measured temperature range. The addition of Nb₂O₅ to ZnO led to an increase in the electrical conductivity and a decrease in the absolute value of the Seebeck coefficient. The best performance at 1000 K has been observed for nominal 0.5 at% Nb-doped ZnO, with an electrical resistivity of about 73.13 (S cm⁻¹) and Seebeck coefficient of ∼257.36 μV K⁻¹, corresponding to a power factor (S²σ) of 4.84×10⁻⁴ Wm⁻¹ K⁻². The thermal conductivity, κ, of the oxide decreased as compared to pure ZnO. The figure of merit ZT values of ZnO-doped Nb₂O₅ samples are higher than the ZnO pure sample, demonstrating that the Nb₂O₅ addition is fairly effective for enhancing thermoelectric properties.     

Na1−xLixNbO3 ceramics studied by X-ray diffraction, dielectric, pyroelectric, piezoelectric and Raman spectroscopy

Na_1−xLi_xNbO₃ ceramics with composition 0.05≤x≤0.30 were prepared by solid-state reaction method and sintered in the temperature range 1100-1150 °C. These ceramics were characterised by X-ray diffraction as well as dielectric permittivity measurements and Raman spectroscopy. Dielectric properties of ceramics belonging to the whole composition domain were investigated in a broad range of temperatures from 300 to 750 K and frequencies from 0.1 to 200 kHz. The Rietveld refinement powder X-ray diffraction analysis showed that these ceramics have a single phase of perovskite structure with orthorhombic symmetry for x≤0.15 and two phases coexistence of rhombohedral and orthorhombic above x=0.20. The evolution of the permittivity as a function of temperature and frequency showed that these ceramics Na_1−xLi_xNbO₃ with composition 0.05≤x≤0.15 present the classical ferroelectric character and the phase transition temperature T_C increases as x content increases. The polarisation state was checked by pyroelectric and piezoelectric measurements. For x=0.05, the piezoelectric coefficient d₃₁ is of 2pC/N. The evolution of the Raman spectra was studied as a function of temperatures and compositions. The results of the Raman spectroscopy study confirm our dielectric measurements, and they indicate clearly the transition from the polar ferroelectric phase to the non-polar paraelectric one.     

Screening effect of Ti ions on the electrical conductivity and thermoelectric power of Mg ferrite

The samples Mg_1+xTi_xFe_2−2xO₄ were prepared in a single phase spinel structure as indicated from X-ray analysis. The preference of Mg²⁺ ions to the octahedral site decreases the ratio of the normal spinel in the investigated ferrite where the Mg²⁺ increases on the expense of the Fe³⁺ ions on the same site. The increase in the conductivity was found to be due to thermally activated mobility of charge carriers. The mobility data enhances the use of Verway model of conductivity which depends on the electron exchange between iron ions of different valences located on the same crystallographic sites. The existence of Ti⁴⁺ ions on the octahedral site screens the polarization and decreases the conductivity of the samples. Peculiar behavior was obtained for Ti content of 0.7 and 0.8 due to the presence of secondary phases.     

Spinel-type solid solutions involving Mn and Ti:Crystal chemistry, magnetic and electrochemical properties

This study reports the structural and magnetic properties of spinel systems Li₄Mn_5−xTi_xO₁₂ (“4-5-12” series) and LiNi_0.5Mn_1.5−xTi_xO₄ (“LNMTO” series), both based on Mn⁴⁺ substitution by Ti⁴⁺. Intermediate compositions covering the whole range of compositions (0≤x≤5 and 0≤x≤1.5, respectively) were prepared by solid state reaction. The 4-5-12 system forms a continuous spinel solid solution, whereas the spinel phase range in LNMTO stops before the end member “LiNi_0.5Ti_1.5O₄”, which is multi-phased with a major hexagonal phase component. Cell parameters and (Mn,Ti)-O distances increase monotonically with titanium content in both series. In the LNMTO series, the end member LiNi_0.5Mn_1.5O₄ is known to form a superstructure with Ni/Mn cation ordering. Neutron diffraction and Raman spectroscopy show that this order is lost when Ti is substituted, even at low level (x=0.15). The LNMTO crystal chemistry is also complicated by the presence of partial cation inversion, and the presence of a secondary rocksalt-type phase that modifies the spinel stoichiometry. Magnetic properties are characterized by a competition between ferromagnetic and antiferromagnetic interactions; no magnetic ordering is achieved, in agreement with B-site cation frustration and disorder. Electrochemical measurements show that the Ti^3+/4+ and Mn^3+/4+ redox couples behave independently in the 4-5-12 series, and that titanium decreases the high-potential electrochemical redox activity of LNMTO because of its blocking character for electron transfer to and from the nickel sites in the spinel structure.     

Effect of Bi2O3 on EPR, optical transmission and DC conductivity of vanadyl doped alkali bismuth borate glasses

Glasses with composition xBi₂O₃·(30−x)M₂O·70B₂O₃ (M=Li, Na) containing 2 mol% V₂O₅ have been prepared over the range 0≤x≤15 (x is in mol%). The electron paramagnetic resonance spectra of VO²⁺ of these glasses have been recorded in the X-band (≈9.3 GHz) at room temperature (RT≈300 K). Spin Hamiltonian parameters, g_∥, g_⊥, A_∥, A_⊥, dipolar hyperfine coupling parameter, P, and Fermi contact interaction parameter, K, have been calculated. The molecular orbital coefficients, α² and γ², have been calculated by recording the optical transmission spectra. In xBi₂O₃·(30−x)Li₂O·70B₂O₃ glasses there is decrease in the tetragonality of the V⁴⁺O₆ complex for x up to 6 mol% whereas for x≥6 mol%, tetragonality increases. In xBi₂O₃·(30−x)Na₂O·70B₂O₃ glasses there is increase in the tetragonality of the V⁴⁺O₆ complex with increasing x. The 3d_xy orbit expands with increase in Bi₂O₃:M₂O ratio. Values of the theoretical optical basicity, Λ_th, have also been reported. The DC conductivity increases with increase in temperature. The order of conductivity is 10⁻⁵ ohm⁻¹ m⁻¹ at low temperature and 10⁻³ ohm⁻¹ m⁻¹ at high temperature. The DC conductivity decreases and the activation energy increases with increase in Bi₂O₃:M₂O ratio.     

Low-temperature thermoelectric properties of Bi85Sb15−xNbx alloys prepared by high-press sintering

The nanocrystalline materials with the general formula Bi₈₅Sb_15−xNb_x (x=0, 0.5, 1, 2, 3) were prepared by mechanical alloying and subsequent high-pressure sintering. Their transport properties involving electrical conductivity, Seebeck coefficient and thermal conductivity have been investigated in the temperature range of 80-300 K. The absolute value of Seebeck coefficient of Bi₈₅Sb₁₃Nb₂ reaches a maximum of 161 μV/K at 105 K, which is 69% larger than that of Bi₈₅Sb₁₅ at the same temperature. The power factor and figure-of-merit are 4.45×10⁻³ WK⁻²m⁻¹ at 220 K and 1.79×10⁻³ K⁻¹ at 196 K, respectively. These results suggest that thermoelectric properties of Bi₈₅Sb₁₅ based material can be improved by Nb doping.     

Annealing of thin Zr films on Si1−xGex(0≤x≤1): X-ray diffraction and Raman studies

X-ray diffraction experiments have been combined with Raman scattering and transmission electron microscopy data to analyze the result of rapid thermal annealing (RTA) applied to Zr films, 16 or 80 nm thick, sputtered on Si_1−xGe_x epilayers (0≤x≤1). The C49 Zr(Si_1−xGe_x)₂ is the unique phase obtained after complete reaction. ZrSi_1−xGe_x is formed as an intermediate phase. The C49 formation temperature T_f is lowered by the addition of Ge in the structure. Above a critical Ge composition close to x=0.33, a film microstructure change was observed. Films annealed at temperatures close to T_f are continuous and relaxed. Annealing at T>T_f leads to discontinuous films: surface roughening resulting from SiGe diffusion at film grain boundaries occurred. Grains are ultimately partially embedded in a SiGe matrix. A reduction in the lattice parameters as well as a shift of Raman lines are observed as T exceeds T_f. Both Ge non-stoichiometry and residual stress have been considered as possible origins for these changes. However, as Ge segregation has never been detected, even by using very efficient techniques, it is thought that the changes originate merely from residual stress. The C49 grains are expected to be strained under the SiGe matrix effect and shift of the Raman lines would indicate the stress is compressive. Some simple evaluations of the stress values indicate that it varies between −0.3 and −3.5 GPa for 0≤x≤1 which corresponds to a strain in the range (−0.11, −1.15%). X-ray and Raman determinations are in good agreement.     

Investigation of the solid solution series 2(MnX)-CuInX2 (X=S, Se)

(2MnX)_x(CuInX₂)_1−x with X=S and Se were prepared by solid state reaction from the end members α-MnS, β-MnS and CuInS₂ in the range 0<x≤0.2 (≤0.6 for β-MnS) as well as MnSe and CuInSe₂ in the range 0<x≤0.1. Mixed crystals with 0≤x≤0.1 crystallize in the tetragonal chalcopyrite type structure, (2α-MnS)_x(CuInS₂)_1−x samples with 0.1<x≤0.2 and (2β-MnS)_x(CuInS₂)_1−x samples up to x=0.6 consist of two phases, occuring as tetragonal domains (x∼0.1 for X=S) within a cubic matrix with zinc-blende type structure (x∼0.4 for X=S), indicating a miscibility gap. For tetragonal single phase samples the band gap energy, the lattice constants and the anion parameter have been determined. The first and the latter ones show a different composition dependent behaviour caused by the modification of the MnS (α-MnS with NaCl type structure, β-MnS with zinc-blende type structure) used during the synthesis. Additionally a CuMn_xIn_1−xS₂ powder sample, in which Mn substitutes the M^III site, was investigated. The SQUID measurements revealed a well-distinct magnetic transition between 15 and 16 K as well as ferromagnetic-like hysteresis loops pronounced for temperatures below the transition temperature. Below this temperature a clear splitting between the zero field cooling (ZFC) and the field cooling (FC) curves indicate to the existence of a long-range magnetic ordering phenomenon. This behaviour was not found in the other samples were Mn substitutes both sites M^I as well as M^III.     

Structural,optical and dielectric properties of Ni substituted NdFeO3

Present study reports the structural, optical and dielectric properties of Ni substituted NdFe_1−xNi_xO₃ (0 ≤ x ≤ 0.5) compounds prepared through the ceramic method. X-ray diffraction (XRD) confirmed an orthorhombic crystal structure of all the samples. Both unit cell volume and grain size were found to decrease with an increase in Ni concentration. Morphological study by Scanning electron microscope (SEM) shows less porosity with Ni substitution in present system. From UV–vis spectroscopy, the optical band gap was found to increase with Ni doping. This observed behavior was explained on the basis of reduction in crystallite size, unit cell volume and its impact on the crystal field potential of the system after Ni substitution. The dielectric properties (?′ and tanδ) as a function of frequency or temperature, and the ac electrical conductivity (σ_ac) as a function of frequency have been studied. Hopping of charge carriers between Fe²⁺ → Fe³⁺ ions and Ni²⁺ → Ni³⁺ ions are held responsible for both electrical and dielectric dispersion in the system. Wide optical band gap and a very high dielectric constant of these materials promote them to be a suitable candidate for memory based devices in electronic industry.     

Effects of double filling of Pb and Ba on thermoelectric properties of PbxBayCo4Sb11.5Te0.5 compounds by HPHT

Skutterudite compounds Pb_xBa_yCo₄Sb_11.5Te_0.5 (x≤0.23,y≤0.27) with bcc crystal structure have been prepared by the high pressure and high temperature (HPHT) method. The study explored a chemical method for filling Pb and Ba atoms into the voids of CoSb₃ to optimize the thermoelectric figure of merit ZT in the system of Pb_yBa_xCo₄Sb_11.5Te_0.5. The structure of Pb_xBa_yCo₄Sb_11.5Te_0.5 skutterudites was evaluated by means of X-ray diffraction. The Seebeck coefficient, electrical resistivity and power factor were performed from room temperature to 710 K. Compared with Co₄Sb_11.5Te_0.5, the thermal conductivity of Pb and Ba double-filled samples was reduced evidently. Among all filled samples, Pb_0.03Ba_0.27Co₄Sb_11.5Te_0.5 showed the highest power factor of 31.64 μW cm⁻¹ K⁻² at 663 K. Pb_0.05Ba_0.25Co₄Sb_11.5Te_0.5 showed the lowest thermal conductivity of 2.73 W m⁻¹ K⁻¹ at 663 K, and its maximum ZT value reached 0.63 at 673 K.     

Magnetic excitations in two-leg spin 1/2 ladders: experiment and theory

Magnetic excitations in two-leg S=1/2 ladders are studied both experimentally and theoretically. Experimentally, we report on the reflectivity, the transmittance and the optical conductivity σ(ω) of undoped La_xCa_14−xCu₂₄O₄₁ for x=4, 5, and 5.2. Using two different theoretical approaches (Jordan-Wigner fermions and perturbation theory), we calculate the dispersion of the elementary triplets, the optical conductivity and the momentum-resolved spectral density of two-triplet excitations for 0.2≤J_∥/J_⊥≤1.2. We discuss phonon-assisted two-triplet absorption, the existence of two-triplet bound states, the two-triplet continuum, and the size of the exchange parameters.     

Phase transformation behavior and dielectric characteristics of BaTi1−x(Al1/2Nb1/2)xO3 (0.01≤x≤0.40) ceramics

Microstructure, phase transformation behavior and dielectric properties of BaTi_1−x(Al_1/2Nb_1/2)_xO₃ (0.01≤x≤0.40) ceramics were investigated. A high level of (Al_1/2Nb_1/2)⁴⁺ substitution for Ti⁴⁺ ions was not conducive to the stability of the perovskite structure and resulted in the formation of BaAl₂O₄. As x was increased, lattice constants and unit cell volume decreased, reached a minimum at x=0.10 and then increased. The BaTi_1−x(Al_1/2Nb_1/2)_xO₃ ceramics at room temperature experienced a transformation from ferroelectric to paraelectric phase with increasing (Al_1/2Nb_1/2)⁴⁺ concentration. Meanwhile, permittivity of the BaTi_1−x(Al_1/2Nb_1/2)_xO₃ ceramics was markedly reduced, while Q value was slightly increased. Frequency dispersion of dielectric peak was obviously increased as x was increased from 0.01 to 0.10. It is of great interest that a dielectric abnormity represented by a broad dielectric peak at 200-400 K was observed for the composition with x=0.40.     

Raman spectra of Ba6−3xSm8+2xTi18O54 solid solution

Raman spectra of Ba_6−3xSm_8+2xTi₁₈O₅₄ solid solution were investigated as the function of x and sintering time. Reasonable explanations were provided about the Raman shifts and their intensities at 1013, 590, 751, 280, 232 cm⁻¹. 1013 cm⁻¹ demonstrates the existence of BaCO₃ phase in solid solution, 590 cm⁻¹ is the symmetric stretching mode of the basal oxygens of the octahedral; 280 and 232 cm⁻¹ are the symmetric stretching modes resulted from the tilt of octahedral when large cation sites are Sm³⁺ and Ba²⁺. The shoulder peak appearing around 302 cm⁻¹ is related to the vacancy produced by the unequal valence of Sm³⁺ and Ba²⁺.     

A novel high-k ‘Y5V’ barium titanate ceramics co-doped with lanthanum and cerium

Structural, dielectric, and ferroelectric properties of a novel high-k ‘Y5V’ (Ba_1−xLa_x)(Ti_1−x/4−yCe_y)O₃ ceramics (where x=0.03 and y=0.05, denoted by BL3TC5) with the highest ‘Y5V’ dielectric response (ε′>10 000) among rare-earth-doped BaTiO₃ ceramics to date are investigated in detail using SEM, TEM, XRD, DSC, EPR, Raman spectroscopy (RS), temperature and frequency, electric field dependences of dielectric permittivity (ε′), and temperature and electric field dependences of ferroelectric hysteresis loops. The BL3TC5 diffusion of ferroelectric phase transition occurs around dielectric peak temperatures (T_m) near a room temperature characteristic of dielectric thermal relaxation. Powder XRD data and defect complex model were given. “Relaxor” behavior associated with an order/disorder model and formation of a solid solution were discussed. The EPR results provided the evidence of Ti vacancies as compensating for lattice defects. High-k relaxor nature of BL3TC5 is characterized by an average cubic structure with long-range lattice disordering and local polar ordering; a slow change of the ε′ (T) and P_r(T) curves around T_m; no phase transition observed by DSC; and a broad, red-shifted A₁ (TO₂) Raman phonon mode at 251 cm⁻¹ accompanying the disappearance of the “silent” mode at 305 cm⁻¹ and a clear anti-resonance effect at 126 cm⁻¹ at room temperature.     

Effect of sulfur additive on density of localized states in nanostructures chalcogenide Se95−xSxZn5 thin films

This paper reports the measurement of space charge limited conduction (SCLC) on the fabricated thin films of Se_95−xS_xZn₅ (0.2≤x≤10) in temperature range 313–353 K for the first time. At high electric fields (E∼10⁴ V/cm), the current could be fitted into the theory of space charge limited conduction, in case of uniform distribution of localized states in mobility gap. The homogeneity and surface morphology of thin films were assessed by scanning electron microscopy. The crystalline nature of the thin films was confirmed by powder XRD and the crystallite size was calculated using Scherer's formula. The crystallite size and density of localized states were found to increase with the increase of sulfur concentration. DC conductivity and activation energy were calculated and found to decrease and increase respectively, with the increase of sulfur concentration.     

Optical gain due to the Eu transition in the alloy of Ca1-xEuxGa2S4

Room temperature photoluminescence quantum efficiency of the alloy of Ca_1−xEu_xGa₂S₄ was measured as a function of x, and was found to be nearly unity under excitation at peak wavelength of excitation spectrum (510 nm) in the x range of 0.01≤x≤0.2. At larger x values, it tends to decrease, but still as high as 30% for stoichiometric compound EuGa₂S₄. Taking these backgrounds into account, pump-probe experiments were done with Ca_1−xEu_xGa₂S₄ for searching optical gain at x=0.2. The optical gain of nearly 30 cm⁻¹ was confirmed to exist, though the pumping induced transient absorption which seems to limit the higher gain was found.