Porous SnO2 nanoflakes with loose-packed structure: Morphology conserved transformation from SnS2 precursor and application in lithium ion batteries and gas sensors

Porous SnO₂ nanoflakes with loose-packed structure were synthesized by calcination of SnS₂ precursors that were obtained through solvothermal method at low temperature. The as-obtained SnO₂ product had a three-dimensional porous structure with relatively high specific surface area. It was found that the SnO₂ nanoflakes inherited the morphology of precursor while numerous pores were formed after the annealing process. The combined techniques of X-ray diffraction, energy-dispersive spectrum, field emission scanning electron microscopy, and (high-resolution) transmission electron microscopy were used for characterization of the as-prepared SnO₂ product. Moreover, the porous SnO₂ nanoflakes with loose-packed structure could be used as gas sensors for detecting ethanol and acted as anode for lithium ion batteries. Our study shows that the as-prepared SnO₂ nanoflakes not only exhibit good response and reversibility to ethanol gas but also display enhanced Li-ion storage capability.     

A novel strategy to synthesize cobalt hydroxide and Co3O4 nanowires

Cobalt hydroxide ultra fine nanowires were prepared by a facile hydrothermal route using hydrogen peroxide. This method provides a simple, low cost, and large-scale route to produce β-cobalt hydroxide nanowires with an average diameter of 5 nm and a length of ca. 10 μm, which show a predominant well-crystalline hexagonal brucite-like phase. Their thermal decomposition produced highly uniform nanowires of cobalt oxide (Co₃O₄) under temperature 500 °C in the presence of oxygen gas. The produced cobalt oxide was characterized by X-ray diffraction, transmission electronic microscopy, and selected-area electron diffraction. The results indicated that cobalt oxide nanowires with an average diameter of 10 nm and a length of ca. 600 nm have been formed, which show a predominant well-crystalline cubic face-centered like phase.     

Defect formation and water incorporation in Y2O3

The molecular statics method is used to study the formation of defects and water incorporation in Y₂O₃. The crystal structure, the isothermal compressibility, and the formation enthalpy of Y₂O₃ calculated with the chosen interaction potentials are in good agreement with the experimental data. The formation energies of intrinsic and impurity defects are evaluated. The binding energy of protons and oxygen vacancies with an acceptor impurity at different distances is calculated. Various water incorporation reactions in the oxide are examined, including the mechanisms involving oxygen interstitial sites and oxygen vacancies produced by the acceptor doping. It is shown that the water incorporation in pure Y₂O₃ is energetically less favorable than in the acceptor doped oxide.     

Structural and physical properties of SrMn2As2

SrMn₂As₂ single crystals were grown by the Sn flux method. Structural features of these crystals were characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The XRD results show that the single crystal has a rhombohedral structure and grows along the c-axis direction. The microstructure and layered structural features of this material have been examined by SEM and high-resolution TEM observations. The measurements of in-plane resistivity as a function of temperature demonstrate that SrMn₂As₂ undergoes a phase transition of semiconductor-insulator at a low temperature; the active energies are estimated to be Δ=0.64 and 0.29 eV for two distinct regions. Magnetic measurements show a clear antiferromagnetic (AFM) transition at about T_N=125 K. Therefore, the SrMn₂As₂ material is an AFM insulator at low temperatures and could be a potential parent compound for superconductors.     

Fabrication of three-dimensional dendrite-like CeO2 crystallites via simple template-free solution route

Highly uniform three-dimensional dendrite-like CeO₂ crystallites were successfully prepared in large quantities with a thermal decomposition of precursor approach applied. The precursor with an average size of 10 μm was prepared in an aqueous solution containing Ce(NO₃)₃·6H₂O, CO(NH₂)₂ and ammonia at 160 °C with no additional phase. The influence of ammonia on the dendrites formation was discussed. The dendritic pattern of precursor almost remained in the as-prepared product. The optical absorption spectrum indicates that CeO₂ dendrites have a direct band gap of 3.52 eV.     

Structural and physical properties of CaFe2As2

Polycrystalline and single crystalline samples of CaFe₂As₂ were prepared by using different fabrication routes. These samples show evident differences in both phase transition temperatures and transport properties depending on fabrication conditions. TEM observations reveal a rich variety of structural phenomena in these materials, such as a tweed-like pattern in self-flux samples, a structural modulation along the 〈1 1 0〉_tetra direction in the polycrystalline sample, and complex dislocation networks in the Sn-flux samples. Careful analysis shows that the twinning domains arising from the tetragonal-to-orthorhombic phase transition belong to the δ-type.     

TiO2/MgAl layered double hydroxides mechanical mixtures as efficient photocatalysts in phenol degradation

MgAl layered double hydroxides (MgAl LDH) were synthesized by the sol-gel method using ultrasound irradiation in the crystallization step. The interlayer anions were nitrate and acetylacetonate-ethoxide. The solids were characterized by XRD, N₂-physisorption and TEM. TiO₂/MgAl LDH mixtures were prepared by mixing the MgAl LDH (as prepared) or the calcined sample with TiO₂ (Aldrich, 99.9% anatase) in different weight ratios. Photocatalytic activities of the TiO₂/MgAl LDH mixtures were evaluated through the degradation of phenol as model pollutant. TiO₂/MgAl LDH mixture (1:1) was more photocatalytically active for the degradation of phenol than pure TiO₂. The synergy effect was attributed to a higher production of ^•OH radicals, which were formed from the structural hydroxides. Also, the hydrotalcite phase enhanced the phenol adsorption and transfer to the TiO₂ sites where the phenol was photocatalytically degradated.     

Electrochemical deposition of Bi2Te3-based thin films

The electrochemical reduction processes on stainless-steel substrates from an aqueous electrolyte composed of nitric acid, Bi³⁺, HTeO₂⁺, SbO⁺ and H₂SeO₃ systems were investigated using cyclic voltammetry. The thin films with a stoichiometry of Bi₂Te₃, Bi_0.5Sb_1.5Te₃ and Bi₂Te_2.7Se_0.3 have been prepared by electrochemical deposition at selected potentials. The structure, composition, and morphology of the films were studied by X-ray diffraction (XRD), environmental scanning electron microscopy (ESEM) and electron microprobe analysis (EMPA). The results showed that the films were single phase with the rhombohedral Bi₂Te₃ structure. The morphology and growth orientation of the films were dependent on the deposition potentials.     

Synthesis, structural and electrical properties of La and Nb modified Bi4Ti3O12 ferroelectric ceramics

Polycrystalline ceramic samples of Bi_4−xLa_xTi₃O₁₂ (x=0.0, 0.5 and 1) and Bi_3.5La_0.5Ti_3−yNb_yO₁₂ (y=0.02 and 0.04) have been synthesized by standard high temperature solid state reaction method using high purity oxides and carbonates. The effect of lanthanum doping on Bi-site and Nb doping on Ti-site on the structural and electrical properties of Bi₄Ti₃O₁₂ powders was investigated by X-ray diffraction, scanning electron microscopy, dc conductivity and dielectric studies. A better agreement between the observed and calculated X-ray diffraction pattern was obtained by performing the Rietveld refinement with a structural model using the non-centrosymmetric space group Fmmm in all the cases. A better agreement between observed and calculated d-values also shows that the lattice parameters calculated using the Rietveld refinement analysis are better. The increase in lanthanum and niobium contents does not lead to any secondary phases. It is found that La³⁺ doping reduces the material grain size and changes its morphology from the plate-like form to a spherical staking like form. The substitution of Nb for Ti ions affected the degree of disorder and modified the dielectric properties leading to more resistive ceramic compounds. The shape and size of the grains are strongly influenced by the addition of niobium to the system. The activation energies of all the compounds were calculated by measuring their dc electrical conductivities. The frequency and temperature dependent dielectric behavior of all the compounds have also been studied and the results are discussed in detail. The substitution of La and Nb on the Bi and Ti sites decreased the T_c and improved the dielectric and ferroelectric behavior.     

Phase stability and electronic structure of Si2Sb2Te5 phase-change material

On the basis of an ab initio computational study, the present work provide a full understanding on the atomic arrangements, phase stability as well as electronic structure of Si₂Sb₂Te₅, a newly synthesized phase-change material. The results show that Si₂Sb₂Te₅ tends to decompose into Si₁Sb₂Te₄ or Si₁Sb₄Te₇ or Sb₂Te₃, therefore, a nano-composite containing Si₁Sb₂Te₄, Si₁Sb₄Te₇ and Sb₂Te₃ may be self-generated from Si₂Sb₂Te₅. Hence Si₂Sb₂Te₅ based nano-composite is the real structure when Si₂Sb₂Te₅ is used in electronic memory applications. The present results agree well with the recent experimental work.     

EPR study of Ce ions in lutetium silicate scintillators Lu2Si2O7 and Lu2SiO5

Two Ce³⁺-doped scintillator crystals, LSO (Lu₂SiO₅:Ce) and LPS (Lu₂Si₂O₇:Ce), are studied by EPR spectroscopy. The analysis indicates that Ce³⁺ substitutes for Lu³⁺ ion in a C₂-symmetry site for LPS and in two C₁-symmetry sites for LSO, with a preference for the largest one, with 6+1 oxygen neighbors. Angular dependence of the EPR spectrum shows that the electronic ground state of Ce³⁺ is different in these two matrices. It is mainly composed of |M_J|=5/2 state in LPS and |M_J|=3/2 state in LSO. The temperature dependence of the linewidth shows a noticeably long spin lattice relaxation time, especially in LPS, which is the result of a stronger crystal field in LPS than in LSO.     

Characterization of interface between CuInSe2 and In2O3

CuInSe₂/In₂O₃ structures were formed by depositing CuInSe₂ films by stepwise flash evaporation onto In₂O₃ films, which were grown by DC reactive sputtering of In target in presence of (Ar+O₂) gas mixture. Phase purity of the CuInSe₂ and In₂O₃ films was confirmed by Transmission Electron Microscopy (TEM) studies. X-ray diffraction (XRD) results on CuInSe₂/In₂O₃/glass structures showed sharp peaks corresponding to (112) plane of CuInSe₂ and (222) plane of In₂O_3. Rutherford Backscattering Spectrometry (RBS) investigations were carried out on CuInSe₂/In₂O₃/Si structures in order to characterize the interface between In₂O₃ and CuInSe₂. The results show that the CuInSe₂ films were near stoichoimetric and In₂O₃ films had oxygen deficient composition. CuInSe₂/In₂O₃ interface was found to include a ∼20 nm thick region consisting of copper, indium and oxygen. Also, the In₂O₃/Si interface showed the formation of ∼20 nm thick region consisting of silicon, indium and oxygen. The results are explained on the basis of diffusion/reaction taking place at the respective interfaces.     

Synthesis and crystallographic studies of garnet-type AgCa2Mn2V3O12 and NaPb2Mn2V3O12

High-purity powder specimens of AgCa₂Mn₂V₃O₁₂ and NaPb₂Mn₂V₃O₁₂ have been successfully synthesized by solid-state chemical reaction. The Rietveld refinements from X-ray powder diffraction data verified that these compounds have the garnet-type structure (space group , No. 230) with the lattice constant of a=12.596(2) Å for AgCa₂Mn₂V₃O₁₂ and a=12.876(2) Å for NaPb₂Mn₂V₃O₁₂. Calculation of the bond valence sum supported that Mn is divalent and V is pentavalent in these garnets. Estimation of the quadratic elongation and the bond angle variance showed that the distortions of the MnO₆ octahedra and the VO₄ tetrahedra are significantly suppressed. Our new results of AgCa₂Mn₂V₃O₁₂ and NaPb₂Mn₂V₃O₁₂ are compared to those of AgCa₂M₂V₃O₁₂ and NaPb₂M₂V₃O₁₂ (M=Mg, Co, Ni, Zn).     

Structural characterisation of [Cu2(bptd) (H2O) Cl4] and [Ni2(bptd)2(H2O)4] Cl4·3H2O; evidence of null intramolecular exchanges by EPR and magnetic measurements

Using the 2,5-bis(2-pyridyl)-1,3,4-thiadiazole (bptd), we recently prepared [Cu₂(bptd) (H₂O) Cl₄] and [Ni₂(bptd)₂ (H₂O)₄] Cl₄, 3H₂O in which the magnetic centres are connected through one diazine+one chloro and two diazine ligand bridges, respectively. These two compounds are the first examples that show null intramolecular magnetic interactions despite M-M distances close to 3.7 Å within perfectly planar edifices:Down to , [Cu₂(bptd)Cl₄(H₂O)] is paramagnetic while, below T_t, half of the Cu²⁺ions interact, leading to residual paramagnetism of one Cu²⁺/f.u. Magnetic susceptibility measurements, EPR and pulsed EPR study indicate the original intermolecular nature of AF exchanges.[Ni₂(bptd)₂(H₂O)₄]Cl₄·3H₂O susceptibility obeys a Curie-law involving pure paramagnetism. Moreover, its EPR spectrum can be interpreted on the basis of virtual S=1 monomers. Below 70 K, Zero Field Splitting (D∼275 G) due to dipolar interactions without magnetic exchanges could be responsible for the LT spectra splitting. For both compounds, the thia role is suggested as partially responsible for the null-in-plane magnetic exchanges.     

Electrical properties of SrBi2(Nb0.5Ta0.5)2O9 ceramics

Aurivillius SrBi₂(Nb_0.5Ta_0.5)₂O₉ (SBNT 50/50) ceramics were prepared using the conventional solid-state reaction method. Scanning electron microscopy was applied to investigate the grain structure. The XRD studies revealed an orthorhombic structure in the SBNT 50/50 with lattice parameters a=5.522 Å, b=5.511 Å and c=25.114 Å. The dielectric properties were determined by impedance spectroscopy measurements. A strong low frequency dielectric dispersion was found to exist in this material. Its occurrence was ascribed to the presence of ionized space charge carriers such as oxygen vacancies. The dielectric relaxation was defined on the basis of an equivalent circuit. The temperature dependence of various electrical properties was determined and discussed. The thermal activation energy for the grain electric conductivity was lower in the high temperature region (T>303.6 °C, E_a−ht=0.47 eV) and higher in the low temperature region (T<303.6 °C, E_a−lt=1.18 eV).     

Schottky defects in cubic lattice of SrTiO3

Structural and electronic properties produced by formation of Schottky defects in cubic structure of SrTiO₃ crystal are investigated by means of a quantum-chemical simulation based on the Hartree-Fock methodology. The occurrence of Sr partial Schottky defect (V_Sr+V_O) and two types of Ti partial Schottky defects (V_Ti+2V_O) is modeled using a supercell containing 135 atoms. Vacancy-induced changes in the positions of their neighboring atoms are analyzed in light of the computed electron density redistribution in the defective region of supercell. The observed local one-electron energy levels in the gap between the upper valence band and the conduction band can be attributed to the presence of anion and cation vacancies.     

Defect properties of CuInSe2 and CuGaSe2

Using first-principles electronic structure theory, we have calculated defect formation energies and defect transition levels in CuInSe₂ and CuGaSe₂. We show that (i) it is easy to form Cu vacancies in CuInSe₂, and (ii) it is also relatively easy to form cation antisite defects (e.g. In_Cu) for this ternary compound. Consequently, defect pairs such as (2V_Cu+In_Cu) have a remarkably low formation enthalpy. As a result, the formation of a series of Cu-poor compounds (CPCs) such as CuIn₅Se₈ and CuIn₃Se₅, is explained as a repeat of (2V_Cu+In_Cu) pairs in CuInSe₂. The very efficient p-type self-doping ability of CuInSe₂ is explained by the easy formation of the shallow Cu vacancies. The electrically benign character of the natural defect in CuInSe₂ is explained in terms of an electronic passivation of the by . For CuGaSe₂, we find that (i) the native acceptor formation energies and transition energy levels are similar to that in CuInSe₂, but the donor formation energy is larger in CuGaSe₂. (ii) The Ga_Cu donor level in CuGaSe₂ is deeper than In_Cu donor level in CuInSe₂, therefore, Ga_Cu behaves as an electron trap in CuGaSe₂, even when it is passivated by V_Cu. We have also calculated the band alignment between the CPCs and CuInSe₂, showing that it could have significant effect on the solar cell performance.     

A high temperature powder neutron diffraction structural study of the apatite-type oxide ion conductor, La9.67Si6O26.5

High-resolution neutron powder diffraction studies of the oxide ion conductor La_9.67Si₆O_26.5 are reported for temperatures ranging between 25 and 900 °C. The best fit to the data was obtained for space group P6₃ and there was no evidence for any change in symmetry over the temperature range studied. Interstitial oxide ions are identified lying in sites similar to those predicted by previous computer modelling studies, and in agreement with structural studies on related materials. Furthermore, occupancy of these sites is enhanced by Frenkel-type disorder from neighbouring positions. The results thus add further weight to the interpretation that, in these apatite-type systems, the silicate substructure is important for the accommodation of interstitial oxide ions and their migration.     

Synthesis of ZnFe2O4 nanocrystallites by mechanochemical reaction

Mechanochemical reaction of ZnO and α-Fe₂O₃ in a planetary mill formed an amorphous precursor, which was subsequently heated to successfully produce zinc ferrite (ZnFe₂O₄) nanocrystallites. The amorphous precursor and nanocrystallites were characterized by differential thermal analysis (DTA), thermogravimetric analysis (TGA), X-ray diffraction (XRD) and transmission electron microscopy (TEM). Calcination of the precursor powder at 600 °C led to the formation of ZnFe₂O₄ nanocrystallites of about 22 nm in crystal size, and most of particle was about 10-50 nm in diameter. Effect of calcination temperature on the crystal size of the nanoparticles was investigated. The mechanism of nanocrystallite growth was primarily investigated. The activation energy of ZnFe₂O₄ nanocrystallite formation during thermal treatment was calculated to be 18.5 kJ/mol.