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1.
Thin films of antimony doped tin oxide (SnO2:Sb) were prepared by spray pyrolysis technique using SnCl2 as precursor with the various antimony doping levels ranging from 1 to 4 wt%. The XRD analysis showed that the undoped SnO2 films grow in (211) preferred orientation whereas the Sb doped films grow in (200) plane. Scanning electron microscopy studies indicated that the surface of the films prepared with lower doping level (1 wt%) consists of larger grains whereas those prepared with higher doping levels (>1 wt%) consist of smaller grains. The sheet resistance has been found to be reduced considerably (2.17 Ω/□) for Sb doped films. To the best of our knowledge this is the lowest sheet resistance obtained for Sb doped SnO2 thin films. 相似文献
2.
Yong Su Xia Meng Yiqing Chen Qingtao Zhou Ling Li Yi Feng 《Journal of Physics and Chemistry of Solids》2009,70(7):1062-1065
In-doped Ga2O3 zigzag-shaped nanowires and undoped Ga2O3 nanowires have been synthesized on Si substrate by thermal evaporation of mixed powders of Ga, In2O3 and graphite at 1000 °C without using any catalyst via a vapor-solid growth mechanism. The morphologies and microstructures of the products were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence spectroscopy (PL). The nanowires range from 100 nm to several hundreds of nanometers in diameter and several tens of micrometers in length. A broad emission band from 400 to 700 nm is obtained in the PL spectrum of these nanowires at room temperature. There are two blue-emission peaks centering at 450 and 500 nm, which originate from the oxygen vacancies, gallium vacancies and gallium-oxygen vacancy pairs. 相似文献
3.
The antimony doped tin oxide (SnO2:Sb) (ATO) thin films were prepared by oblique angle electron beam evaporation technique. X-ray diffraction, field emission scanning electron microscopy, UV-vis-NIR spectrophotometer and four-point probe resistor were employed to characterize the structure, morphology, optical and electrical properties. The results show that oblique angle deposition ATO thin films with tilted columns structure are anisotropic. The in-plane birefringence of optical anisotropy is up to 0.035 at α = 70°, which means that it is suitable as wave plate and polarizer. The electrical anisotropy of sheet resistance shows that the sheet resistance parallel to the deposition plane is larger than that perpendicular to the deposition plane and it can be changed from 900 Ω/□ to 3500 Ω/□ for deposition angle from 40° to 85°, which means that the sheet resistance can be effectively tuned by changing the deposition angle. Additionally, the sandwich structure of SiO2 buffer layer plus normal ATO films and oblique angle deposition ATO films can reduce the resistance, which can balance the optical and electrical anisotropy. It is suggested that oblique angle deposition ATO thin films can be used as transparent conductive thin films in solar cell, anti-foggy windows and multifunctional carrier in liquid crystal display. 相似文献
4.
Polyvinyl alcohol (PVA)/ammonium molybdate composite fibers were prepared by using sol-gel processing and electrospinning technique. After calcinations of the above precursor fibers at 500 °C, MoO3 nanofibers with a diameter of 100-150 nm were successfully obtained. MoO3 nanoplatelets and submicron platelets were prepared by further calcinations of the MoO3 nanofibers at 600 and 700 °C. The products were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and scanning electron microscopy (SEM). A possible growth mechanism for the MoO3 nanofibers and nanoplatelets was suggested. 相似文献
5.
Anukorn Phuruangrat Titipun Thongtem Somchai Thongtem 《Journal of Physics and Chemistry of Solids》2009,70(6):955-959
BaMoO4 and BaWO4 nanocrystals were synthesized from Ba(NO3)2 and Na2MeO4 (Me=Mo and W) solutions using 50% of 600 W microwave irradiation for 20 min. The products were characterized using X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), selected area electron diffraction (SAED) and photoluminescence (PL) spectrophotometry. They show that the products are good dispersed nanocrystals (poly-nanocrystals) of single-phase scheelite tetragonal structure with the vibration modes corresponding to the molybdate and tungstate compounds. Their photoluminescence was detected at 415 and 392 nm for BaMoO4 and BaWO4, respectively. 相似文献
6.
A.P ToraneC.H Bhosale 《Journal of Physics and Chemistry of Solids》2002,63(10):1849-1855
Semiconducting Sb2Se3 thin films have been prepared onto the stainless steel and fluorine doped tin oxide coated glass substrates from non-aqueous media using an electrodeposition technique. The electrodeposition potentials for different bath compositions and concentrations of solution have been estimated from the polarization curves. SbCl3 and SeO2 in the volumetric proportion as 1:1 with their equimolar solution concentration of 0.05 M form good quality films. The films are characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and optical absorption techniques. The SEM studies show that the film covers the total substrate surface with uneven surface morphology. The XRD patterns of the films obtained by varying compositions and concentrations show that the as-deposited films are polycrystalline with relatively higher grain size for 1:1 composition and 0.05 M concentration. The optical band gap energy for indirect transition in Sb2Se3 thin films is found to be 1.195 eV. 相似文献
7.
In this study, we develop a nano-composite nickel oxide (NNO) film on the indium tin oxide (ITO)-coated glass substrate for electrochromic applications. The NNO film is composed of the core-shell structure of NiO/conducting ITO nano-particles. High porosity in the NNO film offers large active surface area for redox reaction. Electrochromic electrodes fabricated with the NNO films produce high transmittance variation (66.2% at a wavelength of 550 nm), fast switching speed (coloring: 3.5 s; bleaching: 4 s) and good durability, which are much better than those of ones made with the traditional nickel oxide films. The structure, morphology, and electrochromic properties are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) and UV-vis spectroscopy. 相似文献
8.
Iron oxide thin films were prepared by spray pyrolysis technique onto glass substrates from iron chloride solution. They were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and (UV-vis) spectroscopy. The films deposited at Ts ≤ 450 °C were amorphous; while those produced at Tsub = 500 °C were polycrystalline α-Fe2O3 with a preferential orientation along the (1 0 4) direction. By observing scanning electron microscopy (SEM), it was seen that iron oxide films were relatively homogeneous uniform and had a good adherence to the glass substrates. The grain size was found (by RX) between 19 and 25 nm. The composition of these films was examined by X-ray photoelectron spectroscopy and electron probe microanalysis (EPMA). These films exhibited also a transmittance value about 80% in the visible and infrared range. The cyclic voltammetry study showed that the films of Fe2O3 deposited on ITO pre-coated glass substrates were capable of charge insertion/extraction when immersed in an electrolyte of propylene carbonate (PC) with 0.5 M LiCLO4. 相似文献
9.
Anukorn Phuruangrat Nuengruethai Ekthammathat Somchai Thongtem 《Journal of Physics and Chemistry of Solids》2011,72(3):176-115
Microwave-assisted synthesis is a novel method used to synthesize CdMoO4 nanoparticles in propylene glycol. The effects of reaction time and microwave power on phase, morphologies, and optical properties of CdMoO4 nanoparticles were studied, using X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), and UV-visible spectroscopy. The present analyses proved that these crystalline powders were scheelite-type tetragonal structured CdMoO4, with the crystallite size of 14-20 nm, and 4.51-4.73 eV band gaps, controlled by the synthetic conditions. 相似文献
10.
In this work, thin films of zinc oxide (ZnO) for gas-sensor applications were deposited on platinum coated alumina substrate, using electrostatic spray deposition (ESD) technique. As precursor solution zinc acetate in ethanol was used. Scanning electron microscopy (SEM) evaluation showed a porous and homogeneous film morphology and the energy dispersive X-ray analysis (EDX) confirmed the composition of the films with no presence of other impurities. The microstructure studied with X-ray diffraction (XRD) and Raman spectroscopy indicated that the ZnO oxide films are crystallized in a hexagonal wurtzite phase. The films showed good sensitivity to 1 ppm nitrogen dioxide (NO2) at 300 °C while a much lower sensitivity to 12 ppm hydrogen sulphide (H2S). 相似文献
11.
The oxidation kinetics of MgNd alloys oxidized in pure O2 at high temperatures has been investigated. The results revealed two stages of the reaction: A fast initial oxidation was followed by a slow oxide growth with a parabolic kinetics. For MgNd alloys (Nd = 25 wt.%), the oxidation rate increased with the enhancement of the oxidation temperature. A sudden ignition was found for this alloys oxidized at 873 K up to about 80 min. Moreover, the increase of the Nd content would harm the oxidation resistance of the MgNd alloys. By Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis, it was found that a triplex structure of oxide film formed. The outer layer was composed of MgO, Nd2O3 and Nd(OH)3, the middle layer mainly consisted of MgO and Nd2O3, and the inner layer was the transitional layer made of MgO, Nd2O3 and the content of the substrate. The protective oxidation was associated with the formation of the dense Nd2O3/MgO layer during isothermal oxidation process. The oxidation mechanisms for the formation of oxide film are discussed. 相似文献
12.
M. Calixto-Rodriguez H. Martínez O. Flores A. Sanchez-Juarez P. Reyes 《Applied Surface Science》2010,256(8):2428-7591
As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV-vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb2S3 thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the post-deposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (Eg) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb2S3 thin films decreased from 108 to 106 Ω-cm after plasma treatments. 相似文献
13.
A.R. Phani M. Passacantando S. Santucci 《Journal of Physics and Chemistry of Solids》2006,67(8):1703-1711
Crack free and smooth surfaces of poly [4,5-difluoro 2,2-bis (trifluoromethyl)-(1,3 dioxole)-co-tetrafluoroethylene] (TFE-co-TFD) thin films have been deposited by wet chemical dip coating technique on polished quartz and glass slide substrates. The deposited films have been subjected to annealing at different temperatures ranging from 100 to 500 °C for 1 h in argon atmosphere. The elemental composition of the as-deposited (xerogel) thin film as well as film annealed at 400 °C was measured by X-ray photoelectron spectroscopy and observed that there was no change in the composition of the film. X-ray diffraction pattern revealed the amorphous behaviour of both as-deposited and film annealed at 400 °C. Surface morphology and elemental composition of the films have been examined by employing scanning electron microscopy attached with energy dispersive X-ray analyser, respectively. It was found that as the annealing temperature increased from 100 to 400 °C, nano-hemisphere-like structures have been grown, which in turn has shown increase in the water contact angle from 122o to 148o and oil (peanut) contact angle from 85° to 96°. No change in the water contact angle (122°) has been observed when the films deposited at room temperature were heated in air from 30 to 80 °C as well as exposed to steam for 8 days for 8 h/day indicating thermal stability of the film. 相似文献
14.
Suraj Kumar Tripathy Trilochan Sahoo Shashi Anand 《Journal of Physics and Chemistry of Solids》2009,70(1):147-2664
TiO2 (anatase and rutile) nanoparticles with an average crystallite size of 20-40 nm have been prepared at room temperature by polyol-mediated synthesis technique in a semi-aqueous solvent medium using titanium iso-propoxide as the titanium source, acetone as the oil phase and ethylene glycol as the stabilizer. Phase and microstructure of the resultant materials have been characterized by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Photocatalytic degradation of acetaldehyde using TiO2 nanoparticles was investigated by gas-chromatography technique. 相似文献
15.
A novel layer-by-layer electrodeposition and heat-treatment approach was attempted to obtain Sn-Sb-Cu film anode for lithium ion batteries. The preparation of Sn-Sb-Cu anodes started with galvanostatic electrochemically depositing antimony and tin sequentially on the substrate of copper foil collector. Sn-Sb and Cu-Sb alloys were formed when heated. The SEM analysis showed that the crystalline grains become bigger and the surface of the Sn-Sb-Cu anode becomes more denser after annealing. The energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analysis showed the antimony, tin and copper were alloyed to form SnSb and Cu2Sb after heat treatment. The X-ray photoelectron spectroscopy (XPS) analysis showed the surface of the Sn-Sb-Cu electrode was covered by a thin oxide layer. Electrochemical measurements showed that the annealed Sn-Sb-Cu anode has high reversible capacity and good capacity retention. It exhibited a reversible capacity of about 962 mAh/g in the initial cycle, which still remained 715 mAh/g after 30 cycles. 相似文献
16.
O.E. Tereshchenko 《Applied Surface Science》2006,252(21):7684-7690
The InSb(0 0 1) surfaces chemically treated in HCl-isopropanol solution and annealed in vacuum were studied by means of X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and electron energy-loss spectroscopy (EELS). The HCl-isopropanol treatment removes indium and antimony oxides and leaves on the surface about 3 ML of physisorbed overlayer, containing indium chlorides and small amounts of antimony, which can be thermally desorbed at 230 °C. The residual carbon contaminations were around 0.2-0.4 ML and consisted of the hydrocarbon molecules. These hydrocarbon contaminations were removed from the surface together with the indium chlorides and antimony overlayer. With increased annealing temperature, a sequence of reconstructions were identified by LEED: (1 × 1), (1 × 3), (4 × 3), and (4 × 1)/c(8 × 2), in the order of decreasing Sb/In ratio. The structural properties of chemically prepared InSb(0 0 1) surface were found to be similar to those obtained by decapping of Sb-capped epitaxial layers. 相似文献
17.
S.P. Yadav 《Journal of Physics and Chemistry of Solids》2008,69(7):1747-1752
Zinc indium selenide (ZnIn2Se4) thin films have been deposited onto amorphous and fluorine doped tin oxide (FTO)-coated glass substrates using a spray pyrolysis technique. Aqueous solution containing precursors of Zn, In, and Se has been used to obtain good quality deposits at different substrate temperatures. The preparative parameters such as substrate temperature and concentration of precursors solution have been optimized by photoelectrochemical technique and are found to be 325 °C and 0.025 M, respectively. The X-ray diffraction patterns show that the films are nanocrystalline with rhombohedral crystal structure having lattice parameter a=4.05 Å. The scanning electron microscopy (SEM) studies reveal the compact morphology with large number of single crystals on the surface. From optical absorption data the indirect band gap energy of ZnIn2Se4 thin film is found to be 1.41 eV. 相似文献
18.
A wealth of superfine polycrystalline cuprous oxide (Cu2O) nanowires have been synthesized with hydrazine hydrated (N2H4·H2O), act as the reducing agent, and Cu(OH)2 nanowires, act as a soft template and surfactant, at room temperature. Two methods were employed for the synthesis of these nanowires, i.e. with and without capping agent (polyethylene glycol Mw 8000). Techniques of powder X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED) pattern, electron diffraction X-ray (EDX) spectroscopy, and UV-visible (UV-vis) spectroscopy have been used to characterize the morphology, structure, crystallinity, purity, and composition of nanowires. The average diameters of Cu2O nanowires, prepared with and without capping agent, were observed to be 8-10 and 12-15 nm and lengths of several microns, respectively. It is found that capping agent (PEG) confines the dimensions of synthesized nanowires. In addition, the observed optical band gap of products show blue-shift effect compared to the bulk Cu2O (Eg=2.17 eV), which ascribe it as a promising material for the conversion between solar energy and electrical or chemical energy. 相似文献
19.
Mohseni Meybodi S Hosseini SA Rezaee M Sadrnezhaad SK Mohammadyani D 《Ultrasonics sonochemistry》2012,19(4):841-845
A sonochemistry-based synthesis method was used to produce nanocrystalline nickel oxide powder with ∼20 nm average crystallite diameter from Ni(OH)2 precursor. Ultrasound waves were applied to the primary solution to intensify the Ni(OH)2 precipitation. Dried precipitates were calcined at 320 °C to form nanocrystalline NiO particles. The morphology of the produced powder was characterized by transmission electron microscopy. Using sonochemical waves resulted in lowering of the size of the nickel oxide crystallites. FT-IR spectroscopy and X-ray diffraction revealed high purity well-crystallized structure of the synthesized powder. Photoluminescence spectroscopy confirmed production of a wide band-gap structure. 相似文献
20.
G. MurugananthamK. Ravichandran K. SaravanakumarA.T. Ravichandran B. Sakthivel 《Superlattices and Microstructures》2011,50(6):722-733
Undoped and fluorine doped tin oxide films were deposited from starting solutions having different values of solvent volume (10-50 ml) by employing a low cost and simplified spray technique using perfume atomizer. X-ray diffraction studies showed that there was a change in the preferential orientation from (2 1 1) plane to (1 1 0) plane as the volume of the solvent was increased. The sheet resistance (Rsh) of undoped SnO2 film was found to be minimum (13.58 KΩ/□) when the solvent volume was lesser (10 ml) and there was a sharp increase in Rsh for higher values of solvent volume. Interestingly, it was observed that while the Rsh increases sharply with the increase in solvent volume for undoped SnO2 films, it decreases gradually in the case of fluorine doped SnO2 films. The quantitative analysis of EDAX confirmed that the electrical resistivity of the sprayed tin oxide film was mainly governed by the number of oxygen vacancies and the interstitial incorporation of Sn atoms which in turn was governed by the impinging flux on the hot substrate. The films were found to have good optical characteristics suitable for opto-electronic devices. 相似文献