Moth-eye-structured light-emitting diodes

InGaAlP/GaAs red light-emitting diodes (LEDs) with a sub-wavelength moth-eye structure at the output surface were demonstrated. A high-resolution polydimethylsiloxane (h-PDMS) casting material was used for the fabrication of the moth-eye structure from polymer template which was fabricated by hot embossing. The h-PDMS mold was subsequently used to transfer the nanostructure on the output surface of the LED by soft embossing. We succeeded in forming a close packed hexagonal array of hemispheres with 300 nm pitch, and 128 nm depth. With 10 mA driving current, the corresponding efficiency (cd/A) of moth-eye-structured light-emitting diodes was enhanced by 36% compared with those of non-patterned LEDs. The experimental results are in agreement with the results of a theoretical analysis of the effect of the moth-eye structure.     

发光二极管在几个电磁学实验中的应用

采用发光二极管对电磁感应现象、自感现象、互感现象和电磁振荡等演示实验进行了改进,明显地提高了实验效果．     

Phosphor-free white light-emitting diodes

The multiple color-matching schemes that could improve the color rendering index for phosphor-free white LEDs are discussed.Then we review a few of the recent research directions for phosphor-free white LEDs,which include the development of monolithic GaN-based white LEDs and hybrid integrated GaN-based and Al Ga In P-based white LEDs.These development paths will pave the way toward commercial application of phosphor-free white LEDs in the coming years.     

Room-temperature SiGe light-emitting diodes

In the present paper the electroluminescence of PIN diodes with either strained SiGe/Si or Ge islands in the i-region has been investigated experimentally and by quantitative modelling. The modelling helped to improve the diode structure. Consequently, diodes with strained Si_0.80Ge_0.20 could be improved so as to reveal emission up to room temperature, if the thickness was high enough. To overcome the thickness limitation due to plastic relaxation, we used selective epitaxy on small areas. We also present results for diodes with Ge islands in the active region. The internal quantum efficiency of light emitting diodes with strained SiGe was at room temperature 10⁻⁴, while diodes with islands emitted ten times less light.     

Intense red phosphors for near-ultraviolet light-emitting diodes

The Sr_2?x Eu _x Al₂Si_1?y Mo _y O₇ as a new near-ultraviolet (UV) excited phosphors were synthesized and their luminescence properties under 393-nm excitation were investigated in detail. It was indicated that Sr_2?x Eu _x Al₂SiO₇ could be effectively excited by 393 nm, and it exhibited an intense red emission at 617 nm. The introduction of Mo ion and charge compensator ion Na did not change the position of the peaks but strengthened the absorption of the phosphors at ～400 nm and strongly enhanced the emission intensity of Eu³⁺ under 393-nm excitations. The intense red-emitting phosphor Sr_1.56Eu_0.22Na_0.22Al₂Si_0.98Mo_0.02O₇ with tetragonal sheet structure was obtained. Its chromaticity coordinates (0.659, 0.331) was very close to the NTSC standard values (0.67, 0.33) and its emission intensity was about 1.5 times higher than that of the commercial red phosphor Y₂O₂S:0.05Eu³⁺. This is considered to be an efficient red-emitting phosphor for near-UV InGaN-based light-emitting diodes (LEDs).     

Coherence characteristics of light-emitting diodes

We report the measurement of coherence characteristics of light-emitting diodes (LEDs). Experiments were performed using red and green color LEDs directly illuminating the Young's double slit kept in the far-zone. Fourier transform fringe analysis technique was used for the measurement of the visibility of interference fringes from which the modulus of degree of spectral coherence was determined. Low degree of spectral coherence, typically 0.4 for red and 0.2 for green LED with double-slit separation of 400 μm was observed. A variable slit was then kept in front of the LEDs and the double slit was illuminated with the light coming out of the slit. Experiments were performed with various slit sizes and the visibility of the interference fringes was observed. It was found that visibility of the interference fringes changes drastically in presence of variable slit kept in front of LEDs and a high degree of spectral coherence, typically 0.85 for red and 0.8 for green LED with double-slit separation of 400 μm and rectangular slit opening of 500 μm was observed. The experimental results are compared with the theoretical counterparts. Coherence lengths of both the LEDs were also determined and it was obtained 5.8±2 and 24±4 μm for green and red LEDs, respectively.     

Simulation of current spreading for GaN-based light-emitting diodes

Uniform current spreading is crucial for the performance of light-emitting diodes (LEDs). It has been reported that the reliability and light distribution are affected by non-uniform current spreading. In this paper, the impact of different electrode patterns on the performance of LED chips is investigated. A hybrid modeling method is employed to analyze the electrical and thermal characteristics of LEDs with two different electrode mesa structures. Corresponding experiments are also carried out to validate the calculation results. It is found that increasing amount of p-electrodes in interdigitated electrode patterns is effective in improving the performance of LEDs.     

Optimising dislocation-engineered silicon light-emitting diodes

This article presents a study of the possibilities of optimising the electroluminescence (EL) efficiency of dislocation-engineered silicon light-emitting diodes (DELEDs). The diodes were produced by implantation of boron in n-type (100)Si wafers, at a constant ion energy and fluence, of 30 keV and 1×10¹⁵ ions/cm², respectively. The density and the areal coverage by dislocation loops were varied by applying different annealing times in a rapid thermal processing, from 30 s to 60 min. It is shown that the EL efficiency is directly correlated to the number and areal coverage by the loops. The highest population of loops, ∼5×10⁹ /cm², and an areal coverage of around 50% were achieved for 1–5 min annealing. This loop distribution results in optimal DELEDs, having the highest EL response and the largest increase of EL intensity with operating temperature (80–300 K). The results of this work confirm a previously introduced model of charge-carrier spatial confinement by a local stress induced by the edge of the dislocation loops, preventing carrier diffusion to non-radiative recombination centres and enhancing radiative transitions at the silicon band edge. PACS 85.60.Jb; 78.60.Fi; 61.72.Tt     

Co50Fe50-xSix合金的结构相变和磁性

利用实验测量和理论计算相结合的方法,研究了介于B2结构CoFe低有序合金和L2₁结构Co₂FeSi高有序合金之间的Co₅₀Fe_50-xSi_x合金的结构相变、磁相变、分子磁矩和居里温度.采用考虑Coulomb相互作用的广义梯度近似(GGA+U)方法计算了合金的能带结构.研究发现,合金出现较强的原子有序倾向,表现出较强的共价成相作用.合金的晶格常数、磁矩、居里温度随Si含量的增加而线性地降低,极限成分Co₂FeSi合金的分子磁矩和居里温度分别达到5.92μ_B和777 ℃.原子尺寸效应导致合金晶格发生变化,但并未成为居里温度和分子磁矩变化的主导因素.分子磁矩的变化符合Slater-Pauling原理,但发现原子磁矩的变化并非线性,据此提出了共价成相对磁性影响的观点.采用Stearns理论解释了居里温度的变化趋势,排除了原子间距对居里温度的主导影响作用.能带计算的结果还表明,Co₂FeSi作为半金属材料并非十分完美,可能在实际应用中会出现自旋极化率降低的问题.发现该系列合金的结构相变和磁相变随着成分的变化聚集在窄小的成分和温度范围内. 关键词： 磁性 Heusler合金 结构相变     

Non-doped-type white organic light-emitting diodes for lighting purpose

We demonstrate a non-doped white organic light-emitting diode (WOLED) in which the blue-, green- and red-emissions are generated from 4,4′-bis(2,2′-diphenylvinyl)-1,1′-biphenyl, tris(8-hydroxyquinoline)aluminum (Alq) and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyl-julolidyl 9-enyl)-4H-pyran (DCJTB), which is used as an ultrathin layer. The DCJTB ultrathin layer plays the chromaticity tuning role in optimizing the white spectral band by modulating the location of the DCJTB ultrathin layer in the green emissive Alq layer. The optimized WOLED gives the Commission Internationale de l’Eclairage-1931 xy coordinates of (0.319, 0.335), a color rendering index of 91.2 at 10 V, a maximum brightness of 21010 cd/m² at 12 V and a maximum current efficiency of 5.17 cd/A at 6.6 V. The electroluminescence mechanism of the white device is also discussed.     

Status of GaN-based green light-emitting diodes

GaN-based blue light emitting diodes(LEDs) have undergone great development in recent years,but the improvement of green LEDs is still in progress.Currently,the external quantum efficiency(EQE) of GaN-based green LEDs is typically30%,which is much lower than that of top-level blue LEDs.The current challenge with regard to GaN-based green LEDs is to grow a high quality In GaN quantum well(QW) with low strain.Many techniques of improving efficiency are discussed,such as inserting Al GaN between the QW and the barrier,employing prestrained layers beneath the QW and growing semipolar QW.The recent progress of GaN-based green LEDs on Si substrate is also reported:high efficiency,high power green LEDs on Si substrate with 45.2% IQE at 35 A/cm2,and the relevant techniques are detailed.     

多波长发光二极管光源雷达系统与近地面低层大气气溶胶探测

设计并研制了一台多波长发光二极管(LED)光源雷达系统,用于探测近地面低层大气气溶胶特性.介绍了LED光源雷达系统的组成及工作原理,计算分析了系统几何重叠因子,从而确定了LED光源雷达系统的最低探测高度为60 m.研究了LED光源雷达散射回波信号的数据反演方法,根据LED光源雷达适合近距离探测的特点,采用了Fernald前向积分反演算法,并以地面能见度仪数据为基础,确定了气溶胶消光系数的边界值.利用所设计的475, 530和625 nm三个波长的LED光源雷达系统,分别在轻度污染、中度污染和重度污染天气情况下,对西安夜晚城区上空低层大气气溶胶进行了探测,获得了近300 m高度内三个波长的大气气溶胶消光系数高度分布曲线,并对近地面低层大气气溶胶的垂直分布与变化特征进行了探讨.     

Design of patterned sapphire substrates for GaN-based light-emitting diodes

A new method for patterned sapphire substrate(PSS) design is developed and proven to be reliable and cost-effective.As progress is made with LEDs' luminous efficiency,the pattern units of PSS become more complicated,and the effect of complicated geometrical features is almost impossible to study systematically by experiments only.By employing our new method,the influence of pattern parameters can be systematically studied,and various novel patterns are designed and optimized within a reasonable time span,with great improvement in LEDs' light extraction efficiency(LEE).Clearly,PSS pattern design with such a method deserves particular attention.We foresee that GaN-based LEDs on these newly designed PSSs will achieve more progress in the coming years.     

Resistive switching functional quantum-dot light-emitting diodes

This study demonstrates quantum-dot light-emitting diodes (QD-LEDs) with a function of resistive switching memory, capable of on/off operation at the same driving current depending on reset/set state. The QD-LEDs were fabricated by spin-coating process and experienced two different annealing conditions, which yielded defective or less-defective V₂O_5–x layer. One of the annealing conditions produced QD-LEDs with the unusual electrical behaviors of negative differential resistance (NDR), capacitance oscillation, and voltage–current hysteresis curves, signifying so-called resistive switching characteristics. X-ray and ultraviolet photoelectron spectroscopies were used to examine the chemical state of the differently annealed V₂O_5–x layers. The less stoichiometric V₂O_5–x layer was found to be responsible for the resistive switching behaviors of the NDR and the low and high resistance states (LRS and HRS, respectively). We discuss the LRS/HRS of V₂O_5–x for resistive switching in terms of a conductive filament effect, induced by microstructural changes caused by oxygen drift and vacancy annihilation processes in the high defect density V₂O_5–x layer.     

Current spreading in GaN-based light-emitting diodes

We have investigated the factors affecting the current spreading length(CSL) in GaN-based light-emitting diodes(LEDs) by deriving theoretical expressions and performing simulations with APSYS.For mesa-structure LEDs,the effects of both indium tin oxide(ITO) and n-GaN are taken into account for the first time,and a new Q factor is introduced to explain the effects of different current flow paths on the CSL.The calculations and simulations show that the CSL can be enhanced by increasing the thickness of the ITO layer and resistivity of the n-GaN layer,or by reducing the resistivity of the ITO layer and thickness of the n-GaN layer.The results provide theoretical support for calculating the CSL clearly and directly.For vertical-structure LEDs,the effects of resistivity and thickness of the CSL on the internal quantum efficiency(IQE) have been analyzed.The theoretical expression relating current density and the parameters(resistivity and thickness)of the CSL is obtained,and the results are then verified by simulation.The IQE under different current injection conditions is discussed.The effects of CSL resistivity play a key role at high current injection,and there is an optimal thickness for the largest IQE only at a low current injection.     

聚合物发光二极管中的负电容效应

采用交流阻抗谱技术,研究了以共轭聚合物(poly［2-methoxy,5-(2′-ethylhexoxy)-1,4-phenylenevinylene］)(MEH-PPV)为发光层,以带有胺基的聚芴共聚物poly［(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)］ (PF-NR₂)为电子传输层的发光二极管的交流响应特性. 对于结构为ITO/P 关键词： 2')" href="#">PF-NR₂ 聚合物发光二极管 交流阻抗谱 负电容效应     

Investigation of bipolar matrix based mixed host in highly efficient green delayed fluorescence organic light-emitting diodes

The mixed cohosts of electron transport host (E-host): 4,40-bis(carbazol-9-yl)biphenyl (CBP) have been comparatively investigated for an efficient green fluorescent organic light emitting diode (OLED) doped with a thermally activated delayed fluorescence (TADF) emitter (4s,6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN). The E-host:CBP systems significantly enhance the electroluminescent (EL) properties. After doping E-host, the lifetime of the emissive layer decreases and the surface becomes smoother, together with the impedance decreases for one magnitude and the hole-injection depresses. The charge balance and improved interface both contribute to the EL performance enhancement. Here we develop a universal mixed host system suitable to most of emitters.     

有机电致发光器件的动态电学特性

利用交流阻抗谱技术，研究了有机发光二极管ITO/Alq₃(90 nm)/Al的载流子传导机理.根据器件对不同频率的响应曲线及其等效电路模型，该器件可看作是由并联的电阻R_p和电容C_p再与电阻R_s串联而成，并根据实验数据求出了R_p，C_p和R_s的数值.实验结果表明器件的载流子传输机理属于指数分布式的陷阱电荷限制电流，其介电弛豫时间随偏压的增加而逐渐减小. 关键词： 3')" href="#">Alq₃ 陷阱电荷限制电流 交流阻抗谱 有机发光二极管