Density functional investigation of structural, electronic and optical properties of Ge-doped ZnO

Recent experiments reported fascinating phenomenon of photoluminescence (PL) blueshift in Ge-doped ZnO. To understand it, we examined the structural, electronic and optical properties of Ge-doped ZnO (ZnO:Ge) systematically by means of density functional theory calculations. Our results show that Ge atoms tend to cluster in heavily doped ZnO. Ge clusters can limit the conductivity of doped ZnO but reinforce the near-band-edge emission. The substitutional Ge for Zn leads to Fermi level pinning in the conduction band, which indicates Ge-doped ZnO is of n-type conductivity character. It is found that the delocalized Ge 4s states hybridize with conduction band bottom, and is dominant in the region near the Fermi level, suggesting that Ge-4s states provides major free carriers in ZnO:Ge crystal. The observed blueshift of PL in Ge-doped ZnO originates from the electron transition energy from the valence band to the empty levels above Fermi level larger than the gap of undoped ZnO. The electron transition between the gap states induced by oxygen vacancy and conduction band minimum may be the origin of the new PL peak at 590 nm.     

Structural and electronic properties of endohedral doped SWCNTs: A DFT study

The structural and electronic properties of semiconductors (Si and Ge) and metal (Au and Tl) atoms doped armchair (n, n) and zigzag (n, 0); n=4–6, single wall carbon nanotubes (SWCNTs) have been studied using an ab-initio method. We have considered a linear chain of dopant atoms inside CNTs of different diameters but of same length. We have studied variation of B.E./atom, ionization potential, electron affinity and HOMO–LUMO gap of doped armchair and zigzag CNTs with diameter and dopant type. For armchair undoped CNTs, the B.E./atom increases with the increase in diameter of the tubes. For Si, Ge and Tl doped CNTs, B.E./atom is maximum for (6, 6) CNT whereas for Au doped CNTs, it is maximum for (5, 5) CNTs. For pure CNTs, IP decreases slightly with increasing diameter whereas EA increases with diameter. The study of HOMO–LUMO gap shows that on doping metallic character of the armchair CNTs increases whereas for zigzag CNTs semiconducting character increases. In case of zigzag tubes only Si doped (5, 0), (6, 0) and Ge doped (6, 0) CNTs are stable. The IP and EA for doped zigzag CNTs remain almost independent of tube diameter and dopant type whereas for doped armchair CNTs, maximum IP and EA are observed for (5, 5) tube for all dopants.     

Effects of Ge doping on the properties of Sb2Te3 phase-change thin films

Ge-doped Sb₂Te₃ films were prepared by magnetron sputtering of Ge and Sb₂Te₃ targets on SiO₂/Si (1 0 0) substrates. The effect of Ge doping on the structure was studied in details by X-ray diffraction, differential scanning calorimetry, and X-ray photoelectron spectroscopy measurements. It is indicated that Ge atoms substitute for Sb/Te in lattice sites and form Ge-Te bonds, moreover, a metastable phase was observed in Ge-doped specimens. Both crystallization temperature and resistivity of amorphous Sb₂Te₃ increase after Ge doping, which are beneficial for improving room temperature stability of the amorphous state and reducing the SET current of chalcogenide random access memory.     

Si/Gen/Si(001)异质结薄膜的掠入射荧光X射线吸收精细结构研究

利用掠入射荧光X射线吸收精细结构(XAFS)方法研究了在400℃的温度下分子束外延生长的Si/Ge_n/Si(001)异质结薄膜(n=1，2，4和8个原子层)中Ge原子的局域环境结构.结果表明，在1至2个Ge原子层(ML)生长厚度的异质结薄膜中，Ge原子的第一近邻配位主要是Si原子.随着Ge原子层厚度增加到4ML，Ge原子的最近邻配位壳层中的Ge-Ge配位的平均配位数增加到1.3.当Ge原子层厚度增加到8ML时，第一配位壳层中的Ge-Ge配位占的比例只有55%.这表明在400℃的生长条件下，Ge原子有很强的迁移到Si覆盖层的能力.随着Ge层厚度从1 增加到2，4和8ML，Ge原子迁移到Si覆盖层的量由0.5ML分别增加到1.5，2.0和3.0ML.认为在覆盖Si过程中Ge原子的迁移主要是通过产生Ge原子表面偏析来降低表面能和Ge层的应变能. 关键词： XAFS n/Si(001)异质膜')" href="#">Si/Ge_n/Si(001)异质膜 迁移效应     

Study on phase separation in a-SiOx for Si nanocrystal formation through the correlation of photoluminescence with structural and optical properties

The phase separation in amorphous silicon suboxide (a-SiO_x) films upon thermal annealing for the formation of light emitting silicon nanocrystals (Si-NCs) was studied through the correlation of photoluminescence (PL) and photoluminescence excitation (PLE) with structural and optical properties. The PL and PLE features and the structural and optical properties show a strong dependence on the annealing process and reveal that the precipitation of the excess Si in a-SiO_x and the formation of Si-NCs from the precipitated Si are two separate processes which should be distinguished in the phase separation in a-SiO_x. They proceed at different temperatures and the formation of Si-NCs is a slow process compared with the precipitation of the excess Si. The nanocrystal size and size distribution evolve with annealing time at the initial stages and are mainly dependent on annealing temperature for a certain O content in the initial a-SiO_x with the density of the formed Si-NCs increasing with longer annealing duration.     

Ab initio study of some fundamental properties of the M3X (M=Cr,V; X=Si,Ge) compounds

M₃X (M=Cr, V; X=Si, Ge) compounds are studied using first-principles calculations based on the Density Functional Theory (DFT). It is found that the bulk of Cr₃X (X=Si, Ge) compounds are comparable to those of Al₂O₃, the nearest-neighbor distance D_M−M and D_M−X in these compounds increase and the bulk modulus decrease, there is a strong interaction between M and M (M=Cr the interaction is stronger). Also the interaction between M (M=Cr, V) and X (X=Ge) is negative, an anti-bonding-type interaction is dominant between these atoms.     

Geometric,stable and electronic properties of Aun-2Y2（n=3-8） clusters

Employing first-principles methods,based on the density function theory,and using the LANL2DZ basis sets,the ground-state geometric,the stable and the electronic properties of Aun-2Y2 clusters are investigated in this paper.Meanwhile,the differences in property among pure gold clusters,pure yttrium clusters,gold clusters doped with one yttrium atom,and gold clusters doped with two yttrium atoms are studied.We find that when gold clusters are doped by two yttrium atoms,the odd-even oscillatory behaviours of Aun-1Y and Aun disappear.The properties of Aun-2Y2 clusters are close to those of pure yttrium clusters.     

Structural, elastic constants, hardness, and optical properties of pyrite-type dinitrides (CN2, SiN2, GeN2)

The crystal structures, band structures, elastic constants, hardness, and optical properties of pyrite-type dinitrides (CN₂, SiN₂, and GeN₂) are obtained from the density functional theory using the plane-wave pseudopotential (PWP) method within the local density and generalized gradient approximations. The formation enthalpies for AN₂ (A=C, Si, and Ge) compounds suggest the three structures that are stable. The calculated band structures show the indirect gaps (Γ−R) in CN₂, SiN₂, and GeN₂. The intrinsic hardnesses of AN₂ (A=C, Si, and Ge ) compounds are calculated. Our results show that the cubic CN₂ and SiN₂ are superhard materials. Furthermore, we studied the optical properties such as the complex dielectric function and the electron energy loss spectra.     

Structural, elastic, electronic and optical properties of a new layered-ternary Ta4SiC3 compound

We propose a new layered-ternary Ta₄SiC₃ with two different stacking sequences (α- and β-phases) of the metal atoms along c axis and study their structural stability. The mechanical, electronic and optical properties are then calculated and compared with those of other compounds M₄AX₃ (M=V, Nb, Ta; A=Al, Si and X=C). The predicted compound in the α-phase is found to possess higher bulk modulus than these compounds. The independent elastic constants of the two phases are also evaluated and the results discussed. The electronic band structures for α- and β-Ta₄SiC₃ show metallic conductivity. Ta 5d electrons are mainly contributing to the total density of states (DOS). We see that the hybridization peak of Ta 5d and C 2p lies lower in energy and the Ta 5d-C 2p bond is stronger than Ta 5d-Si 3p bond. Further an analysis of the different optical properties shows the compound to possess improved behavior compared to similar types of compounds.     

Structural, electronic, elastic and thermal properties of Mg2Si

First-principles calculations of the lattice parameter, electron density maps, density of states and elastic constants of Mg₂Si are reported. The lattice parameter is found to differ by less than 0.8% from the experimental data. Calculations of density of states and electron density maps are also performed to describe the orbital mixing and the nature of chemical bonding. Our results indicate that the bonding interactions in the Mg₂Si crystal are more covalent than ionic. The quasi-harmonic Debye model, by means of total energy versus volume calculations obtained with the plane-wave pseudopotential method, is applied to study the elastic, thermal and vibrational effects. The variations of bulk modulus, Grüneisen parameter, Debye temperature, heat capacity C_v, C_p and entropy with pressure P up to 7 GPa in the temperature interval 0-1300 K have been systemically investigated. Significant differences in properties are observed at high pressure and high temperature. When T<1300 K, the calculated entropy and heat capacity agree reasonably with available experimental data. Therefore, the present results indicate that the combination of first-principles and quasi-harmonic Debye model is an efficient approach to simulate the behavior of Mg₂Si.     

Microstructural, optical and photocatalytic properties of CdS doped TiO2 thin films

CdS doped TiO₂ thin films (with CdS content=0, 3, 6, 9 and 12 at%) were grown on glass substrates. The X-ray diffraction analysis revealed that the films are polycrystalline of monoclinic TiO₂ structure. The microstructure parameters of the films such as crystallite size (D_ν) and microstrain (e) are calculated. Both the crystallites size and the microstrain are decreased with increasing CdS content. The optical constants have been determined in terms of Murmann's exact equations. The refractive index and extinction coefficient are increased with increasing CdS content. The optical band gap is calculated in the strong absorption region. The possible optical transition in these films is found to be an allowed direct transition. The values of E_g^opt are found to decrease as the CdS content increased. The films with 3 at% CdS content have better decomposition efficiency than undoped TiO₂. The films with 6 at% and 9 at% CdS content have decomposition efficiency comparable to that of undoped TiO₂, although they have lower band gap. The CdS doped TiO₂ could have a better impact on the decomposing of organic wastes.     

First-principles study of structural,mechanical, lattice dynamical and thermal properties of nodal-line semimetals ZrXY (X=Si,Ge; Y=S,Se)

Abstract

The nodal-line semimetals are new and very promising materials for technological applications. To understand their structural, mechanical, lattice dynamical and thermal properties in detail, we have investigated theoretical study of ZrXY (X = Si,Ge; Y = S,Se) using Density Functional Theory for the first time. Obtained lattice parameters are in excellent agreement with previous experimental data. These nodal-line semimetals obey the mechanical stability conditions for tetragonal structure. We obtain Bulk modulus, Shear modulus, Poisson’s ratio, Pugh ratio, sound velocities and thermal conductivity using elastic constant. All the materials behave in brittle manner. Poisson’s ratio data and Bader charge analysis results indicate that the ionic bonding characters are dominant. Next, the lattice dynamical properties are calculated. Phonon density of states shows that nodal-line semimetals ZrXY are also dynamically stable in the tetragonal structure. Raman and IR active phonon modes are determined. Highest optical mode at gamma point corresponds to A_2u (IR active) and E_g (Raman active) modes for ZrXSe and ZrXS, respectively. Based on phonon density of states, thermal properties such as Helmholtz free energy, entropy, heat capacity at constant volume and Debye temperature are also presented and discussed.     

First-principles study on the structure,electronic and magnetic properties of HoSin （n=1-12, 20） clusters

The structure, electronic and magnetic properties of HoSin（n= 1 - 12, 20） clusters have been widely investigated by first-principles calculation method based on density flmctional theory （DFT）. From our calculation results, we find that for HoSin（n=1- 12） clusters except n = 7.10, the most stable structures are a replacement of Si atom in the corresponding pure Sin＋1 clusters by Ho atom. The doping of Ho atom makes the stability of Si clusters enhance remarkably, and HoSin（n = 2, 5, 8, 11） clusters are more stable than their neighboring clusters. The magnetic moment of Ho atom in HoSin （n = 1 - 12, 20） clusters mainly comes from of electron of tto, and never quenches.     

Effects of carbon doping on chemical states of amorphous Ge2Sb2Te5, measured with synchrotron radiation

We fabricated and analyzed the chemical states of carbon-doped (5.2–13.2 at.%) Ge₂Sb₂Te₅ thin films on Si substrates using high-resolution, X-ray photoelectron spectroscopy with synchrotron radiation. Thin films were completely amorphous and their phase-change temperature was 150 °C higher than for un-doped GST. As the carbon doping concentration increased, new chemical states of Ge 3d with 29.9 eV and C 1s with 283.7 eV core-levels were observed. The doped carbon was bonded only with Ge in GST and doping was saturated at 8.7 at.%.     

Structural, electronic and magnetic properties of Mn, Co, Ni in Gen for (n=1-13)

The structural, electronic and magnetic properties of TMGe_n (TM=Mn, Co, Ni; n=1-13) have been investigated using spin polarized density functional theory. The transition metal (TM) atom prefers to occupy surface positions for n<9 and endohedral positions for n≥9. The critical size of the cluster to form endohedral complexes is at n=9, 10 and 11 for Mn, Co and Ni respectively. The binding energy of TMGe_n clusters increases with increase in cluster size. The Ni doped Ge_n clusters have shown higher stability as compared to Mn and Co doped Ge_n clusters. The HOMO-LUMO gap for spin up and down electronic states of Ge_n clusters is found to change significantly on TM doping. The magnetic moment in TMGe_n is introduced due to the presence of TM. The magnetic moment is mainly localized at the TM site and neighbouring Ge atoms. The magnetic moment is quenched in NiGe_n clusters for all n except for n=2, 4 and 8.     

镍基超导母体材料EuNi_2Si_2的结构和热力学性质研究

应用Chen-Mbius晶格反演获得的原子间相互作用势,对镍基超导母体材料EuNi2Si2不同空间群的结构进行结构弛豫、切变拉伸、随机扰动和X射线衍射谱的分析.研究表明,空间群号为139结构的EuNi2Si2母体材料能量最低,结构最稳定.另外,还计算了空间群号为139稳定晶格结构的声子态密度和热力学性质.计算结果表明:对于声子态密度,原子质量较大的稀土元素Eu在低频范围内贡献最大,随着频率的升高,原子质量较小的元素Si的贡献越来越突出;对于比热容和振动熵,在低温区元素Eu和Ni的贡献较大,随着温度的升高,元素Si的贡献越来越突出.     

DFT study of size-dependent geometries,stabilities and electronic properties of Si2Agn clusters: comparison with pure silver clusters

The equilibrium geometric structures, stabilities and electronic properties of Si₂Ag_n (n = 1–8) and pure silver Ag_n (n ≤ 10) clusters have been systematically investigated by using meta-generalised gradient approximation. Due to sp³ hybridisation, the lowest energy structures of Si₂Ag_n clusters for n > 2 favour the three-dimensional structure. The silicon atoms prefer to be located at the surface of the host silver clusters. By analysing the relative stabilities, it is found that the di-bridged structure Si₂Ag₂ isomer is the most stable structure for Si₂Ag_n (n = 1–8) clusters. The highest occupied–lowest unoccupied molecular orbital gaps, exhibiting a pronounced even–odd alternation, indicate that the doped clusters with even number of atoms have enhanced chemical stability than those with odd number of atoms. The results of Wiberg bond indices and electronic localisation function show that the stronger Si–Si and Si–Ag interaction may be the main driving force for the higher stability of Si₂Ag_n clusters.     

Electronic and optical properties of Si and Ge nanocrystals: An ab initio study

First-principles calculations within density functional theory and many-body perturbation theory have been carried out in order to investigate the structural, electronic and optical properties of undoped and doped silicon nanostructures. We consider Si nanoclusters co-doped with B and P. We find that the electronic band gap is reduced with respect to that of the undoped crystals, suggesting the possibility of impurity based engineering of electronic and optical properties of Si nanocrystals. Finally, motivated by recent suggestions concerning the chance of exploiting Ge dots for photovoltaic nanodevices, we present calculations of the electronic and optical properties of a Ge₃₅H₃₆ nanocrystal, and compare the results with those for the corresponding Si₃₅H₃₆ nanocrystals and the co-doped Si₃₃BPH₃₆.     

Electronic, magnetic and transport properties of Co2TiZ (Z=Si, Ge and Sn): A first-principle study

We have studied the electronic structure, magnetic and transport properties of some Co based full Heusler alloys, namely Co₂TiZ (Z=Si, Ge and Sn), in the frame work of first-principle calculations. The calculations show that Co₂TiZ (X=Si, Ge and Sn) are to be half-metallic compounds with a magnetic moment of 2 μ_B, well consistent with the Slater-Pauling rule. The electronic structure results reveal that Co₂TiZ has the high density of states at the Fermi energy in the majority-spin state and show 100% spin polarization. Our results also suggest that both the electronic and magnetic properties in these compounds are intrinsically related to the appearance of the minority-spin gap. The origin of energy gap in the minority-spin states is discussed in terms of the electron splitting of Z (Z=Si, Ge and Sn) and 3d Co atoms and also the d-d hybridization between the Co and Ti atoms. The transport properties of these materials are discussed on the basis of Seebeck coefficients, electrical conductivity coefficients and thermal conductivity coefficients.     

Effects of germanium incorporation on optical performances of silicon germanium passive devices for group-IV photonic integrated circuits

Optical interconnect in integrated optoelectronic circuits is one of the promising next-generation technologies for replacing metalized interconnect. Efforts have been made to use silicon (Si)-compatible materials such as germanium (Ge) and Ge-buffered III–V compound semiconductors, along with Si, as optical sources for Si and group-IV integrated optoelectronic systems. This opens the possibility that higher fraction of Ge with its high refractive index (n) can be incorporated in Si waveguide for optical interconnect and the graftability between Si and group-IV or III–V materials would be improved in silicon photonics. In this work, advantageous features of nano-structured silicon germanium (Si_1−xGe_x) optical waveguide with different Ge fraction (x) were evaluated by both optical simulations and theoretical calculations, which are mainly found in the enhanced optical confinement and better interfacing capability. Along with the SiGe waveguide, performance of Si_1−xGe_x microring resonator under material loss in the effect of extinction coefficient (k) has been investigated to suggest the necessity of optimizing the Ge content in Si_1−xGe_x passive devices. While carrying out the establish design criteria, n and k have been modelled in closed-form functions of Ge fraction at 1550 nm. Furthermore, by examining high-resolution transmission electron microscopy (HR-TEM) images, process compatibility of Ge with either group-IV alloys or III–V compound semiconductors is confirmed for the monolithically integrated photonic circuits.